WO2007008473A3 - Apparatus and methods for determining overlay of structures having rotational or mirror symmetry - Google Patents
Apparatus and methods for determining overlay of structures having rotational or mirror symmetry Download PDFInfo
- Publication number
- WO2007008473A3 WO2007008473A3 PCT/US2006/025836 US2006025836W WO2007008473A3 WO 2007008473 A3 WO2007008473 A3 WO 2007008473A3 US 2006025836 W US2006025836 W US 2006025836W WO 2007008473 A3 WO2007008473 A3 WO 2007008473A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- symmetry
- structures
- center
- line
- rotational
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4785—Standardising light scatter apparatus; Standards therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
Abstract
Disclosed are overlay targets having flexible and symmetric characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, the semiconductor target comprises a plurality of first structures having a first center of symmetry or a first line of symmetry being arranged to determine the relative shift in an x direction by analyzing an image of the first structure. The target further comprises a plurality of second structures having a second center of symmetry or a second line of symmetry being arranged to determine the relative shift in an x direction by analyzing an image of the second structures, wherein the first center of symmetry or first line of symmetry has a different location than the second center of symmetry or second line of symmetry.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008521428A JP4926171B2 (en) | 2005-07-11 | 2006-06-30 | Apparatus and method for determining overlay of rotationally symmetric or mirror-symmetric objects |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69853505P | 2005-07-11 | 2005-07-11 | |
US60/698,535 | 2005-07-11 | ||
US11/227,764 | 2005-09-14 | ||
US11/227,764 US7541201B2 (en) | 2000-08-30 | 2005-09-14 | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007008473A2 WO2007008473A2 (en) | 2007-01-18 |
WO2007008473A3 true WO2007008473A3 (en) | 2007-03-01 |
Family
ID=37618037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/025836 WO2007008473A2 (en) | 2005-07-11 | 2006-06-30 | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
Country Status (3)
Country | Link |
---|---|
US (6) | US7541201B2 (en) |
JP (1) | JP4926171B2 (en) |
WO (1) | WO2007008473A2 (en) |
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2005
- 2005-09-14 US US11/227,764 patent/US7541201B2/en not_active Expired - Lifetime
-
2006
- 2006-06-30 WO PCT/US2006/025836 patent/WO2007008473A2/en active Application Filing
- 2006-06-30 JP JP2008521428A patent/JP4926171B2/en active Active
-
2009
- 2009-03-24 US US12/410,317 patent/US8138498B2/en not_active Ceased
-
2012
- 2012-02-28 US US13/407,124 patent/US9182680B2/en not_active Expired - Fee Related
-
2013
- 2013-05-01 US US13/875,160 patent/USRE45245E1/en not_active Expired - Fee Related
-
2015
- 2015-10-01 US US14/873,120 patent/US9347879B2/en not_active Expired - Lifetime
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2016
- 2016-04-22 US US15/136,855 patent/US9702693B2/en not_active Expired - Lifetime
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US20030021465A1 (en) * | 2000-08-30 | 2003-01-30 | Michael Adel | Overlay marks, methods of overlay mark design and methods of overlay measurements |
US6992764B1 (en) * | 2002-09-30 | 2006-01-31 | Nanometrics Incorporated | Measuring an alignment target with a single polarization state |
Also Published As
Publication number | Publication date |
---|---|
US7541201B2 (en) | 2009-06-02 |
US20070008533A1 (en) | 2007-01-11 |
US9702693B2 (en) | 2017-07-11 |
US9347879B2 (en) | 2016-05-24 |
WO2007008473A2 (en) | 2007-01-18 |
US20160313116A1 (en) | 2016-10-27 |
US20090224413A1 (en) | 2009-09-10 |
USRE45245E1 (en) | 2014-11-18 |
US20120153281A1 (en) | 2012-06-21 |
JP2009500863A (en) | 2009-01-08 |
US20160047744A1 (en) | 2016-02-18 |
US9182680B2 (en) | 2015-11-10 |
JP4926171B2 (en) | 2012-05-09 |
US20090051917A9 (en) | 2009-02-26 |
US8138498B2 (en) | 2012-03-20 |
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