WO2007008792A3 - Apparatus and method for controlled particle beam manufacturing - Google Patents

Apparatus and method for controlled particle beam manufacturing Download PDF

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Publication number
WO2007008792A3
WO2007008792A3 PCT/US2006/026725 US2006026725W WO2007008792A3 WO 2007008792 A3 WO2007008792 A3 WO 2007008792A3 US 2006026725 W US2006026725 W US 2006026725W WO 2007008792 A3 WO2007008792 A3 WO 2007008792A3
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WO
WIPO (PCT)
Prior art keywords
downstream
workpiece
particle beam
axis
controlled particle
Prior art date
Application number
PCT/US2006/026725
Other languages
French (fr)
Other versions
WO2007008792A2 (en
Inventor
Michael John Zani
Jeffrey Winfield Scott
Mark Joseph Bennahmias
Mark Anthony Mayse
Original Assignee
Nexgensemi Holdings Corp
Michael John Zani
Jeffrey Winfield Scott
Mark Joseph Bennahmias
Mark Anthony Mayse
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexgensemi Holdings Corp, Michael John Zani, Jeffrey Winfield Scott, Mark Joseph Bennahmias, Mark Anthony Mayse filed Critical Nexgensemi Holdings Corp
Priority to AT06786767T priority Critical patent/ATE537550T1/en
Priority to CN2006800307085A priority patent/CN101248505B/en
Priority to EP06786767A priority patent/EP2027594B1/en
Priority to JP2008520442A priority patent/JP2009500858A/en
Priority to KR1020087003345A priority patent/KR101359562B1/en
Publication of WO2007008792A2 publication Critical patent/WO2007008792A2/en
Publication of WO2007008792A3 publication Critical patent/WO2007008792A3/en
Priority to HK08112776.7A priority patent/HK1119832A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
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    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
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    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66409Unipolar field-effect transistors
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    • H01L29/66462Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material

Abstract

A chamber (102 in Fig. 2) for exposing a workpiece to charged particles (101 in Fig. 2) includes a source, a collimator, a beam digitizer (230 in Fig. 2) downstream of the collimator configured to create a digital beam including groups of at least one charged particle (Fig. 3B and 5) by adjusting longitudinal spacing between the particles along the axis, a deflector (210 in Fig. 6A and 6B) downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
PCT/US2006/026725 2005-07-08 2006-07-10 Apparatus and method for controlled particle beam manufacturing WO2007008792A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AT06786767T ATE537550T1 (en) 2005-07-08 2006-07-10 DEVICE AND METHOD FOR THE CONTROLLED PRODUCTION OF SEMICONDUCTORS USING PARTICLE BEAMS
CN2006800307085A CN101248505B (en) 2005-07-08 2006-07-10 Apparatus and method for controlled particle beam manufacturing
EP06786767A EP2027594B1 (en) 2005-07-08 2006-07-10 Apparatus and method for controlled particle beam manufacturing of semiconductors
JP2008520442A JP2009500858A (en) 2005-07-08 2006-07-10 Apparatus and method for generating a controlled particle beam
KR1020087003345A KR101359562B1 (en) 2005-07-08 2006-07-10 Apparatus and method for controlled particle beam manufacturing
HK08112776.7A HK1119832A1 (en) 2005-07-08 2008-11-21 Apparatus and method for controlled particle beam manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69778005P 2005-07-08 2005-07-08
US60/697,780 2005-07-08

Publications (2)

Publication Number Publication Date
WO2007008792A2 WO2007008792A2 (en) 2007-01-18
WO2007008792A3 true WO2007008792A3 (en) 2007-06-07

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PCT/US2006/026725 WO2007008792A2 (en) 2005-07-08 2006-07-10 Apparatus and method for controlled particle beam manufacturing

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US (10) US7259373B2 (en)
EP (1) EP2027594B1 (en)
JP (1) JP2009500858A (en)
KR (1) KR101359562B1 (en)
CN (1) CN101248505B (en)
AT (1) ATE537550T1 (en)
HK (1) HK1119832A1 (en)
WO (1) WO2007008792A2 (en)

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FR2832546B1 (en) * 2001-11-20 2008-04-04 Centre Nat Rech Scient DEVICE FOR ADJUSTING AN APPARATUS FOR GENERATING A BEAM OF CHARGED PARTICLES
JP4359131B2 (en) * 2003-12-08 2009-11-04 株式会社日立ハイテクノロジーズ Liquid metal ion gun and ion beam apparatus
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