WO2007014294A3 - Solutions integrated circuit integration of alternative active area materials - Google Patents

Solutions integrated circuit integration of alternative active area materials Download PDF

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Publication number
WO2007014294A3
WO2007014294A3 PCT/US2006/029247 US2006029247W WO2007014294A3 WO 2007014294 A3 WO2007014294 A3 WO 2007014294A3 US 2006029247 W US2006029247 W US 2006029247W WO 2007014294 A3 WO2007014294 A3 WO 2007014294A3
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WO
WIPO (PCT)
Prior art keywords
integrated circuit
active area
circuit integration
area materials
alternative active
Prior art date
Application number
PCT/US2006/029247
Other languages
French (fr)
Other versions
WO2007014294A2 (en
Inventor
Anthony J Lochtefeld
Matthew T Currie
Shi-Yuan Chiang
James Fiorenza
Original Assignee
Amberwave Systems Corp
Anthony J Lochtefeld
Matthew T Currie
Shi-Yuan Chiang
James Fiorenza
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amberwave Systems Corp, Anthony J Lochtefeld, Matthew T Currie, Shi-Yuan Chiang, James Fiorenza filed Critical Amberwave Systems Corp
Priority to JP2008524156A priority Critical patent/JP5481067B2/en
Priority to EP06800414A priority patent/EP1911086A2/en
Priority to CN200680032320.9A priority patent/CN101268547B/en
Priority to KR1020087004519A priority patent/KR101329388B1/en
Publication of WO2007014294A2 publication Critical patent/WO2007014294A2/en
Publication of WO2007014294A3 publication Critical patent/WO2007014294A3/en

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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    • H01L29/1025—Channel region of field-effect devices
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    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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Abstract

Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
PCT/US2006/029247 2005-07-26 2006-07-26 Solutions integrated circuit integration of alternative active area materials WO2007014294A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008524156A JP5481067B2 (en) 2005-07-26 2006-07-26 Solutions for the integration of alternative active area materials into integrated circuits
EP06800414A EP1911086A2 (en) 2005-07-26 2006-07-26 Solutions integrated circuit integration of alternative active area materials
CN200680032320.9A CN101268547B (en) 2005-07-26 2006-07-26 Solutions for integrated circuit integration of alternative active area materials
KR1020087004519A KR101329388B1 (en) 2005-07-26 2006-07-26 Solutions for integrated circuit integration of alternative active area materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70236305P 2005-07-26 2005-07-26
US60/702,363 2005-07-26

Publications (2)

Publication Number Publication Date
WO2007014294A2 WO2007014294A2 (en) 2007-02-01
WO2007014294A3 true WO2007014294A3 (en) 2007-08-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/029247 WO2007014294A2 (en) 2005-07-26 2006-07-26 Solutions integrated circuit integration of alternative active area materials

Country Status (6)

Country Link
US (1) US7626246B2 (en)
EP (1) EP1911086A2 (en)
JP (1) JP5481067B2 (en)
KR (1) KR101329388B1 (en)
CN (1) CN101268547B (en)
WO (1) WO2007014294A2 (en)

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