WO2007016218A3 - Integrated electroless deposition system - Google Patents
Integrated electroless deposition system Download PDFInfo
- Publication number
- WO2007016218A3 WO2007016218A3 PCT/US2006/029137 US2006029137W WO2007016218A3 WO 2007016218 A3 WO2007016218 A3 WO 2007016218A3 US 2006029137 W US2006029137 W US 2006029137W WO 2007016218 A3 WO2007016218 A3 WO 2007016218A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- depositing
- electroless
- seed layer
- interconnect features
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1682—Control of atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1685—Process conditions with supercritical condition, e.g. chemical fluid deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1889—Multistep pretreatment with use of metal first
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
Embodiments of the invention provide methods for depositing a material onto a surface of a substrate (120) by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method of depositing a seed layer (129) on a substrate (120) with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer (129) on a substrate (120), fill interconnect features on a substrate (120), or sequentially deposit both a seed layer (129) and fill interconnect features on the substrate (120). One embodiment provides a method for forming a capping layer over substrate interconnects. Embodiments further provide a cluster tool (200) configured to deposit a material onto a substrate surface by using one or more electroless (202, 204), electrochemical plating (210, 212), CVD and/or ALD processing chambers (235). In one aspect, a ruthenium-containing catalytic layer is formed.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/192,993 | 2005-07-29 | ||
US11/192,993 US20060033678A1 (en) | 2004-01-26 | 2005-07-29 | Integrated electroless deposition system |
US11/428,230 | 2006-06-30 | ||
US11/428,230 US20070111519A1 (en) | 2003-10-15 | 2006-06-30 | Integrated electroless deposition system |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007016218A2 WO2007016218A2 (en) | 2007-02-08 |
WO2007016218A3 true WO2007016218A3 (en) | 2009-04-30 |
Family
ID=37709161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/029137 WO2007016218A2 (en) | 2005-07-29 | 2006-07-28 | Integrated electroless deposition system |
Country Status (2)
Country | Link |
---|---|
TW (1) | TWI374951B (en) |
WO (1) | WO2007016218A2 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5295719B2 (en) * | 2008-10-31 | 2013-09-18 | シャープ株式会社 | Plating equipment |
US9328427B2 (en) * | 2012-09-28 | 2016-05-03 | Sunpower Corporation | Edgeless pulse plating and metal cleaning methods for solar cells |
TWI559598B (en) * | 2014-05-16 | 2016-11-21 | 台灣塑膠工業股份有限公司 | Manufacturing apparatus and method for production of dye-sensitized solar cell |
TWI633939B (en) * | 2016-02-26 | 2018-09-01 | 弘塑科技股份有限公司 | Method and device of supplying process liquid |
US11587807B2 (en) * | 2018-10-28 | 2023-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Annealing apparatus and method thereof |
CN113881993A (en) * | 2021-09-29 | 2022-01-04 | 新阳硅密(上海)半导体技术有限公司 | Process method capable of optimizing electroplating hole filling capacity |
CN113897649A (en) * | 2021-09-29 | 2022-01-07 | 新阳硅密(上海)半导体技术有限公司 | TSV (through silicon via) combined electroplating pretreatment process method |
CN114182333B (en) * | 2021-12-24 | 2023-06-23 | 新阳硅密(上海)半导体技术有限公司 | Metal plating equipment and method for sharing wafer clamp |
CN114250501A (en) * | 2021-12-24 | 2022-03-29 | 新阳硅密(上海)半导体技术有限公司 | Equipment and method capable of continuously carrying out electroplating and chemical plating |
CN114232062A (en) * | 2021-12-24 | 2022-03-25 | 新阳硅密(上海)半导体技术有限公司 | Metal plating equipment |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3862023A (en) * | 1972-09-15 | 1975-01-21 | Ppg Industries Inc | Electrode having silicide surface |
US6110011A (en) * | 1997-11-10 | 2000-08-29 | Applied Materials, Inc. | Integrated electrodeposition and chemical-mechanical polishing tool |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6482740B2 (en) * | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH |
US6551488B1 (en) * | 1999-04-08 | 2003-04-22 | Applied Materials, Inc. | Segmenting of processing system into wet and dry areas |
US6555909B1 (en) * | 2001-01-11 | 2003-04-29 | Advanced Micro Devices, Inc. | Seedless barrier layers in integrated circuits and a method of manufacture therefor |
US20030190812A1 (en) * | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US20040013858A1 (en) * | 2000-06-23 | 2004-01-22 | Hacker Nigel P. | Method to restore hydrophobicity in dielectric films and materials |
US20040045837A1 (en) * | 2001-11-14 | 2004-03-11 | Hideo Yoshida | Method for treating the surface of object and apparatus thereof |
US6770565B2 (en) * | 2002-01-08 | 2004-08-03 | Applied Materials Inc. | System for planarizing metal conductive layers |
US6821909B2 (en) * | 2002-10-30 | 2004-11-23 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
-
2006
- 2006-07-28 WO PCT/US2006/029137 patent/WO2007016218A2/en active Application Filing
- 2006-07-28 TW TW95127791A patent/TWI374951B/en not_active IP Right Cessation
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3862023A (en) * | 1972-09-15 | 1975-01-21 | Ppg Industries Inc | Electrode having silicide surface |
US6110011A (en) * | 1997-11-10 | 2000-08-29 | Applied Materials, Inc. | Integrated electrodeposition and chemical-mechanical polishing tool |
US6551488B1 (en) * | 1999-04-08 | 2003-04-22 | Applied Materials, Inc. | Segmenting of processing system into wet and dry areas |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6482740B2 (en) * | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH |
US20040013858A1 (en) * | 2000-06-23 | 2004-01-22 | Hacker Nigel P. | Method to restore hydrophobicity in dielectric films and materials |
US6555909B1 (en) * | 2001-01-11 | 2003-04-29 | Advanced Micro Devices, Inc. | Seedless barrier layers in integrated circuits and a method of manufacture therefor |
US20040045837A1 (en) * | 2001-11-14 | 2004-03-11 | Hideo Yoshida | Method for treating the surface of object and apparatus thereof |
US6770565B2 (en) * | 2002-01-08 | 2004-08-03 | Applied Materials Inc. | System for planarizing metal conductive layers |
US20030190812A1 (en) * | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US6821909B2 (en) * | 2002-10-30 | 2004-11-23 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
Also Published As
Publication number | Publication date |
---|---|
TWI374951B (en) | 2012-10-21 |
TW200716794A (en) | 2007-05-01 |
WO2007016218A2 (en) | 2007-02-08 |
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