WO2007019168A3 - Variable source resistor for flash memory - Google Patents

Variable source resistor for flash memory Download PDF

Info

Publication number
WO2007019168A3
WO2007019168A3 PCT/US2006/030074 US2006030074W WO2007019168A3 WO 2007019168 A3 WO2007019168 A3 WO 2007019168A3 US 2006030074 W US2006030074 W US 2006030074W WO 2007019168 A3 WO2007019168 A3 WO 2007019168A3
Authority
WO
WIPO (PCT)
Prior art keywords
flash memory
source resistor
variable source
current
common
Prior art date
Application number
PCT/US2006/030074
Other languages
French (fr)
Other versions
WO2007019168A2 (en
Inventor
Fabiano Fontana
Steven Fong
Sunil Mehta
Original Assignee
Lattice Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Semiconductor Corp filed Critical Lattice Semiconductor Corp
Publication of WO2007019168A2 publication Critical patent/WO2007019168A2/en
Publication of WO2007019168A3 publication Critical patent/WO2007019168A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits

Abstract

In one embodiment of the invention, a flash memory is provided that includes: a plurality of flash memory cells sharing a common drain node and a common source node; and a current source that controls the current into the common source node.
PCT/US2006/030074 2005-08-03 2006-08-02 Variable source resistor for flash memory WO2007019168A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/196,093 2005-08-03
US11/196,093 US20070030736A1 (en) 2005-08-03 2005-08-03 Variable source resistor for flash memory

Publications (2)

Publication Number Publication Date
WO2007019168A2 WO2007019168A2 (en) 2007-02-15
WO2007019168A3 true WO2007019168A3 (en) 2007-05-18

Family

ID=37717490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/030074 WO2007019168A2 (en) 2005-08-03 2006-08-02 Variable source resistor for flash memory

Country Status (2)

Country Link
US (1) US20070030736A1 (en)
WO (1) WO2007019168A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008204582A (en) * 2007-02-22 2008-09-04 Elpida Memory Inc Nonvolatile ram

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522585B2 (en) * 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US6856551B2 (en) * 2003-02-06 2005-02-15 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357466A (en) * 1993-07-14 1994-10-18 United Microelectronics Corporation Flash cell with self limiting erase and constant cell current
US5995423A (en) * 1998-02-27 1999-11-30 Micron Technology, Inc. Method and apparatus for limiting bitline current
US6052310A (en) * 1998-08-12 2000-04-18 Advanced Micro Devices Method for tightening erase threshold voltage distribution in flash electrically erasable programmable read-only memory (EEPROM)
JP4049641B2 (en) * 2002-09-06 2008-02-20 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device
US6894925B1 (en) * 2003-01-14 2005-05-17 Advanced Micro Devices, Inc. Flash memory cell programming method and system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522585B2 (en) * 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US6856551B2 (en) * 2003-02-06 2005-02-15 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices

Also Published As

Publication number Publication date
US20070030736A1 (en) 2007-02-08
WO2007019168A2 (en) 2007-02-15

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