WO2007024924A3 - Nano-liquid crystal on silicon (lcos) chip having reduced noise - Google Patents

Nano-liquid crystal on silicon (lcos) chip having reduced noise Download PDF

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Publication number
WO2007024924A3
WO2007024924A3 PCT/US2006/032879 US2006032879W WO2007024924A3 WO 2007024924 A3 WO2007024924 A3 WO 2007024924A3 US 2006032879 W US2006032879 W US 2006032879W WO 2007024924 A3 WO2007024924 A3 WO 2007024924A3
Authority
WO
WIPO (PCT)
Prior art keywords
chip
bit lines
silicon
lcos
layer
Prior art date
Application number
PCT/US2006/032879
Other languages
French (fr)
Other versions
WO2007024924A2 (en
Inventor
Gihong Kim
Tae Soo Chun
Original Assignee
Sysview Technology Inc
Gihong Kim
Tae Soo Chun
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sysview Technology Inc, Gihong Kim, Tae Soo Chun filed Critical Sysview Technology Inc
Priority to CN2006800306824A priority Critical patent/CN101253546B/en
Priority to JP2008513846A priority patent/JP2008546013A/en
Publication of WO2007024924A2 publication Critical patent/WO2007024924A2/en
Publication of WO2007024924A3 publication Critical patent/WO2007024924A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes

Abstract

An LCoS chip (100) designed to suppress electrical noise due to cross-talk between electrical components of the chip and stray light entered into the chip. The chip (100) includes a silicon substrate (120) having an array of memory cells formed thereon. The chip (100) includes the first polycrystalline silicon layer (302) that forms word lines and a metal layer (413) that forms bit lines (304), wherein the bit lines (304) are directed orthogonal to the word lines. The chip (100) also includes capacitor storages (308) formed of the second and third polycrystalline silicon layers (310, 312). The second polycrystalline layer (310) is disposed over the first polycyrstalline silicon layer (302) and over regions of the substrate (100) not covered by the word lines. The metal layer (413) includes shields (432) to reduce cross-talk between neighboring bit lines (304) as well as between the bit lines (304) and capacitor storages (308).
PCT/US2006/032879 2005-08-23 2006-08-22 Nano-liquid crystal on silicon (lcos) chip having reduced noise WO2007024924A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2006800306824A CN101253546B (en) 2005-08-23 2006-08-22 Nano-liquid crystal on silicon (LCOS) chip having reduced noise
JP2008513846A JP2008546013A (en) 2005-08-23 2006-08-22 Nano liquid crystal on silicon chip with reduced noise

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US71099305P 2005-08-23 2005-08-23
US60/710,993 2005-08-23
US11/504,915 US7486287B2 (en) 2005-08-23 2006-08-15 Nano-liquid crystal on silicon (LCOS) chip having reduced noise
US11/504,915 2006-08-15

Publications (2)

Publication Number Publication Date
WO2007024924A2 WO2007024924A2 (en) 2007-03-01
WO2007024924A3 true WO2007024924A3 (en) 2007-11-15

Family

ID=37772316

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/032879 WO2007024924A2 (en) 2005-08-23 2006-08-22 Nano-liquid crystal on silicon (lcos) chip having reduced noise

Country Status (4)

Country Link
US (1) US7486287B2 (en)
JP (1) JP2008546013A (en)
CN (1) CN101253546B (en)
WO (1) WO2007024924A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7483112B2 (en) * 2004-10-05 2009-01-27 Sysview Technology, Inc. Carbon nano tube technology in liquid crystal on silicon micro-display
US8097504B2 (en) * 2007-06-26 2012-01-17 Sandisk Technologies Inc. Method for forming dual bit line metal layers for non-volatile memory
CN101620347B (en) * 2008-07-03 2011-08-17 中芯国际集成电路制造(上海)有限公司 Silicon-based liquid crystal device and manufacturing method thereof
DE102009060441B4 (en) * 2009-12-22 2014-11-20 Amg Intellifast Gmbh sensor element
CN104049424B (en) * 2014-06-26 2016-08-24 安徽大学 Dot structure for the liquid crystal on silicon spatial light modulator that holographic video shows
KR102317249B1 (en) * 2019-08-13 2021-10-25 (주) 리가스텍 Pixel Structure of LCoS Display

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6326958B1 (en) * 1999-05-14 2001-12-04 Zight Corporation Power partitioned miniature display system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS64925A (en) 1987-06-23 1989-01-05 Toray Ind Inc Spacer for liquid crystal element
US6122033A (en) 1998-04-06 2000-09-19 National Semiconductor Corporation Fusible seal for LCD devices and methods for making same
JP2000252373A (en) * 1999-03-04 2000-09-14 Toshiba Corp Non-volatile semiconductor memory, display provided therewith and its manufacture
US20030007117A1 (en) 2001-06-01 2003-01-09 Mcknight Douglas J. Channel to control seal width in optical devices
JP2003098483A (en) * 2001-09-25 2003-04-03 Ricoh Co Ltd Optical member and illumination device using the same, and enlargement projection device
US20050162727A1 (en) * 2004-01-24 2005-07-28 Fusao Ishii Micromirrors with support walls
JP2007025611A (en) * 2005-06-17 2007-02-01 Seiko Epson Corp Electro-optical device, method of manufacturing the same, and electronic apparatus
JP4542492B2 (en) * 2005-10-07 2010-09-15 セイコーエプソン株式会社 Electro-optical device and manufacturing method thereof, electronic apparatus, and semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6326958B1 (en) * 1999-05-14 2001-12-04 Zight Corporation Power partitioned miniature display system

Also Published As

Publication number Publication date
JP2008546013A (en) 2008-12-18
US7486287B2 (en) 2009-02-03
CN101253546A (en) 2008-08-27
WO2007024924A2 (en) 2007-03-01
CN101253546B (en) 2011-02-09
US20070046885A1 (en) 2007-03-01

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