WO2007028026A3 - Flash drive fast wear leveling - Google Patents

Flash drive fast wear leveling Download PDF

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Publication number
WO2007028026A3
WO2007028026A3 PCT/US2006/034243 US2006034243W WO2007028026A3 WO 2007028026 A3 WO2007028026 A3 WO 2007028026A3 US 2006034243 W US2006034243 W US 2006034243W WO 2007028026 A3 WO2007028026 A3 WO 2007028026A3
Authority
WO
WIPO (PCT)
Prior art keywords
flash drive
wear leveling
fast wear
drive fast
pointers
Prior art date
Application number
PCT/US2006/034243
Other languages
French (fr)
Other versions
WO2007028026A2 (en
WO2007028026B1 (en
Inventor
Steve Kolokowsky
Original Assignee
Cypress Semiconductor Corp
Steve Kolokowsky
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cypress Semiconductor Corp, Steve Kolokowsky filed Critical Cypress Semiconductor Corp
Priority to KR1020087007800A priority Critical patent/KR101383853B1/en
Priority to JP2008529311A priority patent/JP2009507302A/en
Publication of WO2007028026A2 publication Critical patent/WO2007028026A2/en
Publication of WO2007028026A3 publication Critical patent/WO2007028026A3/en
Publication of WO2007028026B1 publication Critical patent/WO2007028026B1/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1032Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036Life time enhancement
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7211Wear leveling
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles

Abstract

A system and method comprising a non- volatile memory including one or more memory blocks to store data, a controller to allocate one or more of the memor blocks to store data, and a wear-leveling table populated with pointers to unallocated memory blocks in the non-volatile memory, the controller to identify one or more pointers in the wear-leveling table and to allocate the unallocated memory blocks associated with the identified pointers for the storage of data.
PCT/US2006/034243 2005-09-01 2006-08-31 Flash drive fast wear leveling WO2007028026A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020087007800A KR101383853B1 (en) 2005-09-01 2006-08-31 Flash drive fast wear leveling
JP2008529311A JP2009507302A (en) 2005-09-01 2006-08-31 High-speed wear leveling of flash drives

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US71391305P 2005-09-01 2005-09-01
US60/713,913 2005-09-01
US11/468,569 US7853749B2 (en) 2005-09-01 2006-08-30 Flash drive fast wear leveling
US11/468,569 2006-08-30

Publications (3)

Publication Number Publication Date
WO2007028026A2 WO2007028026A2 (en) 2007-03-08
WO2007028026A3 true WO2007028026A3 (en) 2007-12-27
WO2007028026B1 WO2007028026B1 (en) 2008-03-06

Family

ID=37805689

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/034243 WO2007028026A2 (en) 2005-09-01 2006-08-31 Flash drive fast wear leveling

Country Status (4)

Country Link
US (2) US7853749B2 (en)
JP (1) JP2009507302A (en)
KR (1) KR101383853B1 (en)
WO (1) WO2007028026A2 (en)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7680977B2 (en) * 2004-02-26 2010-03-16 Super Talent Electronics, Inc. Page and block management algorithm for NAND flash
CN103280239B (en) 2006-05-12 2016-04-06 苹果公司 Distortion estimation in memory device and elimination
KR101202537B1 (en) * 2006-05-12 2012-11-19 애플 인크. Combined distortion estimation and error correction coding for memory devices
US7697326B2 (en) * 2006-05-12 2010-04-13 Anobit Technologies Ltd. Reducing programming error in memory devices
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7821826B2 (en) 2006-10-30 2010-10-26 Anobit Technologies, Ltd. Memory cell readout using successive approximation
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
WO2008068747A2 (en) * 2006-12-03 2008-06-12 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
WO2008101316A1 (en) * 2007-02-22 2008-08-28 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
US8086785B2 (en) * 2007-02-22 2011-12-27 Mosaid Technologies Incorporated System and method of page buffer operation for memory devices
US8369141B2 (en) * 2007-03-12 2013-02-05 Apple Inc. Adaptive estimation of memory cell read thresholds
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US7689762B2 (en) * 2007-05-03 2010-03-30 Atmel Corporation Storage device wear leveling
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8527819B2 (en) * 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
TWI354996B (en) * 2007-12-31 2011-12-21 Phison Electronics Corp Wear leveling method and controller thereof
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8082384B2 (en) 2008-03-26 2011-12-20 Microsoft Corporation Booting an electronic device using flash memory and a limited function memory controller
KR101437123B1 (en) 2008-04-01 2014-09-02 삼성전자 주식회사 Memory system and wear leveling method thereof
US20090254729A1 (en) * 2008-04-07 2009-10-08 Skymedi Corporation Method of wear leveling for a non-volatile memory
US20090259819A1 (en) * 2008-04-09 2009-10-15 Skymedi Corporation Method of wear leveling for non-volatile memory
TWI385667B (en) * 2008-06-26 2013-02-11 Phison Electronics Corp Block accessing method for flash memory and storage system and controller using the same
FR2933803B1 (en) * 2008-07-08 2010-09-24 Thales Sa DEVICE AND METHOD FOR BACKING UP DATA ON NON-VOLATILE MEMORY MEDIA OF A NAND FLASH TYPE FOR ONBOARD CALCULATORS
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8082386B2 (en) * 2008-10-21 2011-12-20 Skymedi Corporation Method of performing wear leveling with variable threshold
US8891298B2 (en) 2011-07-19 2014-11-18 Greenthread, Llc Lifetime mixed level non-volatile memory system
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
US8275933B2 (en) * 2008-11-10 2012-09-25 Fusion-10, Inc Apparatus, system, and method for managing physical regions in a solid-state storage device
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8825940B1 (en) 2008-12-02 2014-09-02 Siliconsystems, Inc. Architecture for optimizing execution of storage access commands
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US9176859B2 (en) * 2009-01-07 2015-11-03 Siliconsystems, Inc. Systems and methods for improving the performance of non-volatile memory operations
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US10079048B2 (en) * 2009-03-24 2018-09-18 Western Digital Technologies, Inc. Adjusting access of non-volatile semiconductor memory based on access time
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8266344B1 (en) * 2009-09-24 2012-09-11 Juniper Networks, Inc. Recycling buffer pointers using a prefetch buffer
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
KR101097438B1 (en) * 2009-10-29 2011-12-23 주식회사 하이닉스반도체 Solid State Storage System For Controlling of Wear-Leveling Flexibly and Method of Controlling the Same
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
KR101090394B1 (en) * 2009-12-24 2011-12-07 주식회사 하이닉스반도체 Solid State Storage System For Controlling of Reserved Area Flexibly and Method of Controlling the Same
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
JP5612508B2 (en) * 2010-03-25 2014-10-22 パナソニック株式会社 Nonvolatile memory controller and nonvolatile storage device
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US9003247B2 (en) 2011-04-28 2015-04-07 Hewlett-Packard Development Company, L.P. Remapping data with pointer
US9098399B2 (en) 2011-08-31 2015-08-04 SMART Storage Systems, Inc. Electronic system with storage management mechanism and method of operation thereof
US9063844B2 (en) 2011-09-02 2015-06-23 SMART Storage Systems, Inc. Non-volatile memory management system with time measure mechanism and method of operation thereof
US9021319B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Non-volatile memory management system with load leveling and method of operation thereof
US9021231B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Storage control system with write amplification control mechanism and method of operation thereof
US9239781B2 (en) 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
US9116792B2 (en) * 2012-05-18 2015-08-25 Silicon Motion, Inc. Data storage device and method for flash block management
US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
US9123445B2 (en) 2013-01-22 2015-09-01 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9214965B2 (en) 2013-02-20 2015-12-15 Sandisk Enterprise Ip Llc Method and system for improving data integrity in non-volatile storage
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
US9183137B2 (en) 2013-02-27 2015-11-10 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US8812744B1 (en) 2013-03-14 2014-08-19 Microsoft Corporation Assigning priorities to data for hybrid drives
US9043780B2 (en) 2013-03-27 2015-05-26 SMART Storage Systems, Inc. Electronic system with system modification control mechanism and method of operation thereof
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9170941B2 (en) 2013-04-05 2015-10-27 Sandisk Enterprises IP LLC Data hardening in a storage system
US9543025B2 (en) 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
US9626126B2 (en) 2013-04-24 2017-04-18 Microsoft Technology Licensing, Llc Power saving mode hybrid drive access management
US9946495B2 (en) 2013-04-25 2018-04-17 Microsoft Technology Licensing, Llc Dirty data management for hybrid drives
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9146850B2 (en) 2013-08-01 2015-09-29 SMART Storage Systems, Inc. Data storage system with dynamic read threshold mechanism and method of operation thereof
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9431113B2 (en) * 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9747157B2 (en) 2013-11-08 2017-08-29 Sandisk Technologies Llc Method and system for improving error correction in data storage
US9152555B2 (en) 2013-11-15 2015-10-06 Sandisk Enterprise IP LLC. Data management with modular erase in a data storage system
CN104102459A (en) * 2014-07-03 2014-10-15 优佰特电子科技(无锡)有限公司 Flash memory device and data processing method thereof
KR102211868B1 (en) * 2014-12-15 2021-02-04 삼성전자주식회사 Storage device and operating method of storage device
EP3035195A1 (en) * 2014-12-16 2016-06-22 SFNT Germany GmbH A wear leveling method and a wear leveling system for a non-volatile memory
US10157141B2 (en) 2016-03-09 2018-12-18 Toshiba Memory Corporation Memory system and method of controlling nonvolatile memory
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568423A (en) * 1995-04-14 1996-10-22 Unisys Corporation Flash memory wear leveling system providing immediate direct access to microprocessor
US6263399B1 (en) * 1998-06-01 2001-07-17 Sun Microsystems, Inc. Microprocessor to NAND flash interface
US20040210706A1 (en) * 2002-07-26 2004-10-21 Samsung Electronics Co., Ltd. Method for managing flash memory

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI235915B (en) * 2003-03-13 2005-07-11 Ritek Corp Device and method for recording the status of block of a nonvolatile memory
US7032087B1 (en) * 2003-10-28 2006-04-18 Sandisk Corporation Erase count differential table within a non-volatile memory system
US7441067B2 (en) * 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568423A (en) * 1995-04-14 1996-10-22 Unisys Corporation Flash memory wear leveling system providing immediate direct access to microprocessor
US6263399B1 (en) * 1998-06-01 2001-07-17 Sun Microsystems, Inc. Microprocessor to NAND flash interface
US20040210706A1 (en) * 2002-07-26 2004-10-21 Samsung Electronics Co., Ltd. Method for managing flash memory

Also Published As

Publication number Publication date
JP2009507302A (en) 2009-02-19
KR101383853B1 (en) 2014-04-17
US7853749B2 (en) 2010-12-14
US8417881B1 (en) 2013-04-09
US20070050536A1 (en) 2007-03-01
WO2007028026A2 (en) 2007-03-08
KR20080082601A (en) 2008-09-11
WO2007028026B1 (en) 2008-03-06

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