WO2007033362A3 - Systems, masks, and methods for photolithography - Google Patents

Systems, masks, and methods for photolithography Download PDF

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Publication number
WO2007033362A3
WO2007033362A3 PCT/US2006/035985 US2006035985W WO2007033362A3 WO 2007033362 A3 WO2007033362 A3 WO 2007033362A3 US 2006035985 W US2006035985 W US 2006035985W WO 2007033362 A3 WO2007033362 A3 WO 2007033362A3
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
contours
photomask
masks
photolithography
Prior art date
Application number
PCT/US2006/035985
Other languages
French (fr)
Other versions
WO2007033362A2 (en
Inventor
Daniel Abrams
Danping Peng
Stanley Osher
Original Assignee
Luminescent Technologies Inc
Daniel Abrams
Danping Peng
Stanley Osher
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luminescent Technologies Inc, Daniel Abrams, Danping Peng, Stanley Osher filed Critical Luminescent Technologies Inc
Priority to CN2006800399528A priority Critical patent/CN101297390B/en
Priority to EP06814717.2A priority patent/EP1925020A4/en
Priority to KR1020087008802A priority patent/KR101330344B1/en
Priority to JP2008530041A priority patent/JP5405109B2/en
Publication of WO2007033362A2 publication Critical patent/WO2007033362A2/en
Publication of WO2007033362A3 publication Critical patent/WO2007033362A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes

Abstract

Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes 'merit function' for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
PCT/US2006/035985 2005-09-13 2006-09-13 Systems, masks, and methods for photolithography WO2007033362A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2006800399528A CN101297390B (en) 2005-09-13 2006-09-13 Systems, masks, and methods for photolithography
EP06814717.2A EP1925020A4 (en) 2005-09-13 2006-09-13 Systems, masks, and methods for photolithography
KR1020087008802A KR101330344B1 (en) 2005-09-13 2006-09-13 Systems, masks, and methods for photolithography
JP2008530041A JP5405109B2 (en) 2005-09-13 2006-09-13 System, mask and method for photolithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77599105P 2005-09-13 2005-09-13
US60/775,991 2005-09-13

Publications (2)

Publication Number Publication Date
WO2007033362A2 WO2007033362A2 (en) 2007-03-22
WO2007033362A3 true WO2007033362A3 (en) 2007-09-27

Family

ID=37865601

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/035985 WO2007033362A2 (en) 2005-09-13 2006-09-13 Systems, masks, and methods for photolithography

Country Status (7)

Country Link
US (1) US7707541B2 (en)
EP (1) EP1925020A4 (en)
JP (1) JP5405109B2 (en)
KR (1) KR101330344B1 (en)
CN (1) CN101297390B (en)
TW (1) TWI398721B (en)
WO (1) WO2007033362A2 (en)

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US7707541B2 (en) 2010-04-27
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