WO2007055924A3 - Wafer level packaging process - Google Patents

Wafer level packaging process Download PDF

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Publication number
WO2007055924A3
WO2007055924A3 PCT/US2006/041853 US2006041853W WO2007055924A3 WO 2007055924 A3 WO2007055924 A3 WO 2007055924A3 US 2006041853 W US2006041853 W US 2006041853W WO 2007055924 A3 WO2007055924 A3 WO 2007055924A3
Authority
WO
WIPO (PCT)
Prior art keywords
vias
wafer
mems
level packaging
packaging process
Prior art date
Application number
PCT/US2006/041853
Other languages
French (fr)
Other versions
WO2007055924A2 (en
Inventor
Uppili Sridhar
Quanbo Zou
Original Assignee
Maxim Integrated Products
Uppili Sridhar
Quanbo Zou
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxim Integrated Products, Uppili Sridhar, Quanbo Zou filed Critical Maxim Integrated Products
Priority to JP2008538928A priority Critical patent/JP5189491B2/en
Priority to EP06826782A priority patent/EP1945562A2/en
Publication of WO2007055924A2 publication Critical patent/WO2007055924A2/en
Publication of WO2007055924A3 publication Critical patent/WO2007055924A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00301Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/09Packages
    • B81B2207/091Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094Feed-through, via
    • B81B2207/096Feed-through, via through the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

Wafer level packaging process for packaging MEMS or other devices. In some embodiments, a MEMS wafer with normal thickness is firstly bonded to a cap wafer of normal thickness, followed by a thinning on the backside of the MEMS wafer. After this, the bonded wafer stack and the capping of the hermetically packaged MEMS devices are still rigid enough to do further processing. On this basis, through vias on the thinned substrate can be easily formed and stopped on the regions to be led out (e.g., metal pads /electrodes, highly doped silicon, etc.) . Vias can be partially filled as this is the final surface of process . Even thick metal coated/patterned vias have much more space to relax possible thermal stress, as long as the vias are not completely filled with hard metal (s) . Various embodiments are disclosed.
PCT/US2006/041853 2005-11-03 2006-10-25 Wafer level packaging process WO2007055924A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008538928A JP5189491B2 (en) 2005-11-03 2006-10-25 Wafer level packaging method
EP06826782A EP1945562A2 (en) 2005-11-03 2006-10-25 Wafer level packaging process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/265,810 2005-11-03
US11/265,810 US7393758B2 (en) 2005-11-03 2005-11-03 Wafer level packaging process

Publications (2)

Publication Number Publication Date
WO2007055924A2 WO2007055924A2 (en) 2007-05-18
WO2007055924A3 true WO2007055924A3 (en) 2007-07-19

Family

ID=37907360

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/041853 WO2007055924A2 (en) 2005-11-03 2006-10-25 Wafer level packaging process

Country Status (4)

Country Link
US (1) US7393758B2 (en)
EP (1) EP1945562A2 (en)
JP (1) JP5189491B2 (en)
WO (1) WO2007055924A2 (en)

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Also Published As

Publication number Publication date
US20070099395A1 (en) 2007-05-03
WO2007055924A2 (en) 2007-05-18
JP5189491B2 (en) 2013-04-24
EP1945562A2 (en) 2008-07-23
JP2009515338A (en) 2009-04-09
US7393758B2 (en) 2008-07-01

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