WO2007056017A3 - Bandgap and recombination engineered emitter layers for si-ge hbt performance optimization - Google Patents

Bandgap and recombination engineered emitter layers for si-ge hbt performance optimization Download PDF

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Publication number
WO2007056017A3
WO2007056017A3 PCT/US2006/042682 US2006042682W WO2007056017A3 WO 2007056017 A3 WO2007056017 A3 WO 2007056017A3 US 2006042682 W US2006042682 W US 2006042682W WO 2007056017 A3 WO2007056017 A3 WO 2007056017A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitter
region
bandgap
performance optimization
emitter layers
Prior art date
Application number
PCT/US2006/042682
Other languages
French (fr)
Other versions
WO2007056017A8 (en
WO2007056017A2 (en
Inventor
Darwin Gene Enicks
Damian Carver
Original Assignee
Atmel Corp
Darwin Gene Enicks
Damian Carver
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp, Darwin Gene Enicks, Damian Carver filed Critical Atmel Corp
Publication of WO2007056017A2 publication Critical patent/WO2007056017A2/en
Publication of WO2007056017A3 publication Critical patent/WO2007056017A3/en
Publication of WO2007056017A8 publication Critical patent/WO2007056017A8/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; and forming an emitter region over the compound base region including forming a first emitter layer within the emitter region and doping the first emitter layer with a pre-determined percentage of at least one element associated with the compound base region. In one implementation, an emitter region is formed including multiple emitter layers to enhance a surface recombination surface area within the emitter region.
PCT/US2006/042682 2005-11-04 2006-10-31 Bandgap and recombination engineered emitter layers for si-ge hbt performance optimization WO2007056017A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/267,553 2005-11-04
US11/267,553 US7651919B2 (en) 2005-11-04 2005-11-04 Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization

Publications (3)

Publication Number Publication Date
WO2007056017A2 WO2007056017A2 (en) 2007-05-18
WO2007056017A3 true WO2007056017A3 (en) 2007-08-02
WO2007056017A8 WO2007056017A8 (en) 2007-09-20

Family

ID=38004308

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/042682 WO2007056017A2 (en) 2005-11-04 2006-10-31 Bandgap and recombination engineered emitter layers for si-ge hbt performance optimization

Country Status (3)

Country Link
US (1) US7651919B2 (en)
TW (1) TW200729349A (en)
WO (1) WO2007056017A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7651919B2 (en) 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US8456392B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8482101B2 (en) * 2009-06-22 2013-07-09 International Business Machines Corporation Bipolar transistor structure and method including emitter-base interface impurity
US8501572B2 (en) * 2010-09-02 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structure for transistor device and method of manufacturing same
CN102456571B (en) * 2010-10-21 2013-06-12 上海华虹Nec电子有限公司 Method for manufacturing doped polycrystalline silicon of emitting electrode
CN103050516B (en) * 2011-10-13 2016-04-13 上海华虹宏力半导体制造有限公司 Accurate control EB ties the structure of position and EB knot reverse breakdown voltage
CN103137471B (en) * 2011-11-23 2015-08-19 上海华虹宏力半导体制造有限公司 The manufacture method of the parasitic PNP device of the self-isolation type in SiGe HBT technique
US9728464B2 (en) 2012-07-27 2017-08-08 Intel Corporation Self-aligned 3-D epitaxial structures for MOS device fabrication
US8558282B1 (en) 2012-09-08 2013-10-15 International Business Machines Corporation Germanium lateral bipolar junction transistor
WO2014132616A1 (en) * 2013-02-28 2014-09-04 旭化成エレクトロニクス株式会社 Semiconductor device and production method for same
US9761701B2 (en) * 2014-05-01 2017-09-12 Infineon Technologies Ag Bipolar transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962880A (en) * 1996-07-12 1999-10-05 Hitachi, Ltd. Heterojunction bipolar transistor
US20030022528A1 (en) * 2001-02-12 2003-01-30 Todd Michael A. Improved Process for Deposition of Semiconductor Films

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2122738A5 (en) 1971-01-21 1972-09-01 Corobit Anstalt
US4352532A (en) 1980-09-15 1982-10-05 Robertshaw Controls Company Manifolding means for electrical and/or pneumatic control units and parts and methods therefor
US4383547A (en) 1981-03-27 1983-05-17 Valin Corporation Purging apparatus
US4437479A (en) 1981-12-30 1984-03-20 Atcor Decontamination apparatus for semiconductor wafer handling equipment
US4852516A (en) 1986-05-19 1989-08-01 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4771326A (en) * 1986-07-09 1988-09-13 Texas Instruments Incorporated Composition double heterojunction transistor
GB8708926D0 (en) 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
US5223243A (en) * 1987-05-08 1993-06-29 Salutar, Inc. Dipyridoxyl phosphate chelating compound intermediates useful as NMRI contrast agents
US5001534A (en) 1989-07-11 1991-03-19 At&T Bell Laboratories Heterojunction bipolar transistor
FR2660651B1 (en) * 1990-04-09 1994-02-11 Institut Francais Petrole PROCESS FOR OBTAINING AT LEAST ONE TERTIARY OLEFIN BY DECOMPOSING THE CORRESPONDING ETHER.
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5137047A (en) 1990-08-24 1992-08-11 Mark George Delivery of reactive gas from gas pad to process tool
JP3130545B2 (en) 1991-03-06 2001-01-31 株式会社東芝 Semiconductor device and method of manufacturing semiconductor device
JP3150376B2 (en) 1991-09-30 2001-03-26 ローム株式会社 Fabrication of heterojunction bipolar transistor
JPH05109750A (en) * 1991-10-15 1993-04-30 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture of the same
US5352912A (en) 1991-11-13 1994-10-04 International Business Machines Corporation Graded bandgap single-crystal emitter heterojunction bipolar transistor
FR2692721B1 (en) 1992-06-17 1995-06-30 France Telecom METHOD FOR PRODUCING A BIPOLAR HETEROJUNCTION TRANSISTOR AND TRANSISTOR OBTAINED.
JP2582519B2 (en) 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション Bipolar transistor and method of manufacturing the same
US5316171A (en) 1992-10-01 1994-05-31 Danner Harold J Jun Vacuum insulated container
US5523243A (en) 1992-12-21 1996-06-04 International Business Machines Corporation Method of fabricating a triple heterojunction bipolar transistor
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5449294A (en) 1993-03-26 1995-09-12 Texas Instruments Incorporated Multiple valve assembly and process
JP3156436B2 (en) 1993-04-05 2001-04-16 日本電気株式会社 Heterojunction bipolar transistor
US5631173A (en) 1993-07-12 1997-05-20 Texas Instruments Incorporated Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter
US5433128A (en) * 1993-10-07 1995-07-18 Gcw Development Sucker rod coupling tool and method
JP2551364B2 (en) 1993-11-26 1996-11-06 日本電気株式会社 Semiconductor device
US5583059A (en) * 1994-06-01 1996-12-10 International Business Machines Corporation Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5665614A (en) 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
FR2736468B1 (en) 1995-07-07 1997-08-14 Thomson Csf BIPOLAR TRANSISTOR WITH OPTIMIZED STRUCTURE
KR100205017B1 (en) 1995-12-20 1999-07-01 이계철 Method for manufacturing heterojunction bipolar transistor
JPH1079506A (en) * 1996-02-07 1998-03-24 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
DE19609933A1 (en) * 1996-03-14 1997-09-18 Daimler Benz Ag Method of manufacturing a heterobipolar transistor
WO1997037182A1 (en) 1996-03-29 1997-10-09 Minnesota Mining And Manufacturing Company Apparatus and method for drying a coating on a substrate employing multiple drying subzones
US6099599A (en) 1996-05-08 2000-08-08 Industrial Technology Research Institute Semiconductor device fabrication system
US5992463A (en) 1996-10-30 1999-11-30 Unit Instruments, Inc. Gas panel
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
WO1998030622A1 (en) 1997-01-10 1998-07-16 Nippon Valqua Industries, Ltd. Process for producing surface-modified rubber, surface-modified rubber, and sealing material
US6423990B1 (en) 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
US5912481A (en) 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6598279B1 (en) 1998-08-21 2003-07-29 Micron Technology, Inc. Multiple connection socket assembly for semiconductor fabrication equipment and methods employing same
US6563145B1 (en) 1999-04-19 2003-05-13 Chang Charles E Methods and apparatus for a composite collector double heterojunction bipolar transistor
TW567559B (en) 1999-06-23 2003-12-21 Hitachi Ltd Semiconductor device
US6199255B1 (en) 1999-10-06 2001-03-13 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus for disassembling an injector head
US6442867B2 (en) 2000-01-04 2002-09-03 Texas Instruments Incorporated Apparatus and method for cleaning a vertical furnace pedestal and cap
US6573539B2 (en) 2000-01-10 2003-06-03 International Business Machines Corporation Heterojunction bipolar transistor with silicon-germanium base
US6251738B1 (en) 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
US6325886B1 (en) 2000-02-14 2001-12-04 Redwood Microsystems, Inc. Method for attaching a micromechanical device to a manifold, and fluid control system produced thereby
US6531369B1 (en) 2000-03-01 2003-03-11 Applied Micro Circuits Corporation Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
US6410396B1 (en) 2000-04-26 2002-06-25 Mississippi State University Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications
US6555874B1 (en) 2000-08-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate
US6607605B2 (en) 2000-08-31 2003-08-19 Chemtrace Corporation Cleaning of semiconductor process equipment chamber parts using organic solvents
US20020163013A1 (en) 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6349744B1 (en) 2000-10-13 2002-02-26 Mks Instruments, Inc. Manifold for modular gas box system
US6791692B2 (en) 2000-11-29 2004-09-14 Lightwind Corporation Method and device utilizing plasma source for real-time gas sampling
US6509242B2 (en) 2001-01-12 2003-01-21 Agere Systems Inc. Heterojunction bipolar transistor
US6696710B2 (en) 2001-02-27 2004-02-24 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
US6541346B2 (en) 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
US20020149033A1 (en) 2001-04-12 2002-10-17 Michael Wojtowicz GaN HBT superlattice base structure
US6750119B2 (en) 2001-04-20 2004-06-15 International Business Machines Corporation Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
US6459104B1 (en) 2001-05-10 2002-10-01 Newport Fab Method for fabricating lateral PNP heterojunction bipolar transistor and related structure
US6861324B2 (en) 2001-06-15 2005-03-01 Maxim Integrated Products, Inc. Method of forming a super self-aligned hetero-junction bipolar transistor
US20030012925A1 (en) 2001-07-16 2003-01-16 Motorola, Inc. Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
US6870204B2 (en) 2001-11-21 2005-03-22 Astralux, Inc. Heterojunction bipolar transistor containing at least one silicon carbide layer
JP4060580B2 (en) * 2001-11-29 2008-03-12 株式会社ルネサステクノロジ Heterojunction bipolar transistor
JPWO2003050880A1 (en) 2001-12-11 2005-04-21 松下電器産業株式会社 Semiconductor light emitting device and manufacturing method thereof
US6794237B2 (en) 2001-12-27 2004-09-21 Texas Instruments Incorporated Lateral heterojunction bipolar transistor
US6670654B2 (en) 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
US6555852B1 (en) * 2002-01-17 2003-04-29 Agere Systems Inc. Bipolar transistor having an emitter comprised of a semi-insulating material
JP3914064B2 (en) * 2002-02-28 2007-05-16 富士通株式会社 Method and apparatus for growing mixed crystal film
JP2003297849A (en) 2002-04-05 2003-10-17 Toshiba Corp Heterojunction bipolar transistor and manufacture method therefor
JP4391069B2 (en) 2002-04-30 2009-12-24 富士通マイクロエレクトロニクス株式会社 Hetero bipolar transistor and manufacturing method thereof
US6806513B2 (en) 2002-10-08 2004-10-19 Eic Corporation Heterojunction bipolar transistor having wide bandgap material in collector
US7556048B2 (en) 2002-11-15 2009-07-07 Agere Systems Inc. In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor
US6764918B2 (en) 2002-12-02 2004-07-20 Semiconductor Components Industries, L.L.C. Structure and method of making a high performance semiconductor device having a narrow doping profile
US6861323B2 (en) 2003-02-21 2005-03-01 Micrel, Inc. Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance
US6845034B2 (en) 2003-03-11 2005-01-18 Micron Technology, Inc. Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons
US6797578B1 (en) * 2003-05-13 2004-09-28 Newport Fab, Llc Method for fabrication of emitter of a transistor and related structure
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US7300849B2 (en) 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US20070102729A1 (en) 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962880A (en) * 1996-07-12 1999-10-05 Hitachi, Ltd. Heterojunction bipolar transistor
US20030022528A1 (en) * 2001-02-12 2003-01-30 Todd Michael A. Improved Process for Deposition of Semiconductor Films

Also Published As

Publication number Publication date
TW200729349A (en) 2007-08-01
WO2007056017A8 (en) 2007-09-20
WO2007056017A2 (en) 2007-05-18
US7651919B2 (en) 2010-01-26
US20070105330A1 (en) 2007-05-10

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