WO2007059657A1 - Package structure of light-emitting diode - Google Patents

Package structure of light-emitting diode Download PDF

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Publication number
WO2007059657A1
WO2007059657A1 PCT/CN2005/002033 CN2005002033W WO2007059657A1 WO 2007059657 A1 WO2007059657 A1 WO 2007059657A1 CN 2005002033 W CN2005002033 W CN 2005002033W WO 2007059657 A1 WO2007059657 A1 WO 2007059657A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
package structure
emitting device
device package
Prior art date
Application number
PCT/CN2005/002033
Other languages
English (en)
French (fr)
Inventor
Jen-Shyan Chen
Original Assignee
Jen-Shyan Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jen-Shyan Chen filed Critical Jen-Shyan Chen
Priority to US12/085,444 priority Critical patent/US7786490B2/en
Priority to JP2008541569A priority patent/JP2009517853A/ja
Priority to PCT/CN2005/002033 priority patent/WO2007059657A1/zh
Priority to EP05813956A priority patent/EP1970967A1/en
Publication of WO2007059657A1 publication Critical patent/WO2007059657A1/zh

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/767—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having directions perpendicular to the light emitting axis
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
    • F21V29/773—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor light-emitting device package structure, and in particular, the present invention relates to a multi-chip module single package structure for a semiconductor light-emitting die (Multi-chip module single package) Structure).
  • Background technique Multi-chip module single package structure for a semiconductor light-emitting die
  • LEDs Semiconductor light-emitting devices
  • advantages such as power saving, long service life, fast response, and suitable mass production. Therefore, lighting products using semiconductor light-emitting devices as a light source have gradually become a trend.
  • a primary aspect of the present invention is to provide a single package structure for a multi-chip module for a semiconductor light emitting die.
  • a semiconductor light emitting device package structure includes a substrate, N lower pads, and N semiconductor light emitting die modules.
  • a top surface and a bottom surface are defined on the substrate, N first recesses are formed on a top surface of the substrate, and N second recesses are formed on a bottom surface of the substrate.
  • Each of the second recesses is opposite to a first recess and is in communication with the first recess.
  • a plurality of external electric charges are arranged on the top surface Extreme.
  • N is a positive integer greater than or equal to 2.
  • each of the N lower bases corresponds to a second recess.
  • a first surface and a second surface are defined on each of the lower bases.
  • Each of the lower bases is embedded in the corresponding second recess, such that a portion of the first surface of the lower base is exposed to the interior of the first recess.
  • each of the N semiconductor light emitting die modules corresponds to a lower base, and is fixed on a portion of the lower surface of the lower base exposed to the interior of the corresponding first recess .
  • the inner electrode of each of the semiconductor light emitting die modules itself is also electrically connected to the external electrodes.
  • FIG. 1A is a top plan view of a semiconductor light emitting device package structure 1 in accordance with a preferred embodiment of the present invention.
  • Fig. 1B is a cross-sectional view of the semiconductor light emitting device package structure 1 of Fig. 1A taken along the line K-K.
  • FIG. 2 illustrates another variation of the semiconductor light emitting device package structure 1 of FIG. 1A.
  • 3A is a perspective view of a semiconductor light emitting device package structure 3 in accordance with another preferred embodiment of the present invention.
  • Figure 3B is a partial cross-sectional view of the semiconductor light emitting device package structure 3 of Figure 3A taken along line 0-0.
  • 3C is a partial cross-sectional view of the semiconductor light emitting device package structure 3 of FIG. 3A taken along line P-P to show another variation of the conductor light emitting device package structure 3.
  • FIG. 4 illustrates another variation of the semiconductor light emitting device package structure 3 of FIG. 3A. Detailed ways
  • the present invention provides a semiconductor light emitting device package structure, and in particular, a multi-chip module single package structure for a semiconductor light emitting die.
  • a semiconductor light emitting device package structure and in particular, a multi-chip module single package structure for a semiconductor light emitting die.
  • FIG. 1A is a top plan view of a semiconductor light emitting device package structure 1 in accordance with a preferred embodiment of the present invention.
  • 1B is the semiconductor illuminator of FIG. 1A A cross-sectional view of the package structure 1 along the KK line.
  • a semiconductor light emitting device package structure 1 includes a substrate 12, N sub-moims 14 and N semiconductor light-emitting die modules 16, wherein N Is a positive integer greater than or equal to 2.
  • the semiconductor light emitting device package structure 1 of FIGS. 1A and 1B has three semiconductor light emitting die modules as an illustrative example.
  • a top surface 122 and a bottom surface 124 are defined on the substrate 12.
  • N first recesses 126 are formed on the top surface 122 of the substrate 12.
  • N second recessed portions 128 are formed on the bottom surface 124 of the substrate 12.
  • Each of the second recessed portions 128 is opposite to the first recessed portion 126 and communicates with the first recessed portion 126.
  • a plurality of outer electrodes are provided on the top surface 122.
  • each of the lower bases 14 corresponds to a second recess 128, and each of the lower bases 14 defines a first surface 142 and a second surface 144.
  • Each of the lower bases 14 is embedded in the corresponding second recessed portion 128 such that a portion of the first surface 142 of the lower base 14 is exposed to the inside of the first recessed portion 126.
  • the N lower bases 14 may be made of a semiconductor material, a ceramic material, or a metal material.
  • each of the N semiconductor light emitting die modules 16 corresponds to a lower base 14 , and the first surface 142 fixed to the lower base 14 is exposed to the inside of the corresponding first recess 126 .
  • an internal electrode (not shown) of each of the semiconductor light emitting die modules 16 is electrically connected to the external electrodes.
  • the shape of the substrate is not limited.
  • the top view of the substrate 12 in Fig. 1A is rectangular.
  • the top view of the substrate 12 illustrated in Fig. 2 is circular.
  • the unit having the same reference numerals as in Fig. 1A in Fig. 2 also performs the functions of the corresponding unit in Fig. 1A, and is not much obscured here.
  • the semiconductor light emitting device package structure 1 further includes a package material (not shown).
  • the encapsulating material fills each of the first recesses 126, respectively, to cover each of the semiconductor light emitting die modules 16.
  • the semiconductor light emitting device package structure 1 according to the present invention further includes a package material (not shown).
  • the encapsulation material integrally fills the first recess 126 to integrally cover the N semiconductor light emitting die modules 16.
  • the semiconductor light emitting device package structure 1 according to the present invention further includes a transparent cover case (not shown).
  • the covering shell is mounted on the top surface 122, and integrally encapsulating N semiconductor light emitting die modules 16.
  • the semiconductor light emitting device package structure 1 according to the present invention further includes N transparent cover housings (not shown).
  • the cladding housings are mounted on the top surface 122, and each of the cladding housings encloses one of the N semiconductor light emitting die modules 16 .
  • FIG. 3A is a perspective view of a semiconductor light emitting device package structure 3 in accordance with another preferred embodiment of the present invention.
  • Figure 3B is a partial cross-sectional view of the semiconductor light emitting device package structure 3 of Figure 3A taken along line O-O.
  • the semiconductor light emitting device package structure 3 Similar to the semiconductor light emitting device package structure 1 of FIG. 1A, the semiconductor light emitting device package structure 3 also includes a substrate 32, N lower pads (not shown), and N semiconductor light emitting die modules 34, wherein N is one. A positive integer greater than or equal to 2.
  • Figure 3A depicts three semiconductor light emitting die modules.
  • the semiconductor light emitting device package structure 3 further includes a carrier 36 and N substantially pillar-shaped heat-conducting devices 38.
  • Each of the N heat conducting devices 38 has a flat portion.
  • the substrate 32 is fixed to the stage 36 with its own bottom surface.
  • the stage 36 has N through holes respectively with respect to the position of a lower base, and each of the through holes cooperates with the insertion of a heat conducting device 38, so that the flat portion of the heat conducting device 38 is tightly engaged with the corresponding lower base.
  • each of the N heat conducting devices 38 is a heat pipe or a heat column.
  • the N heat conducting devices 38 are each made of copper, aluminum or a material having a high thermal conductivity.
  • the semiconductor light emitting device package structure 3 further includes at least one heat-dissipating fin 40. At least one heat dissipation fin 40 is fixed to the periphery of the heat conduction device 38.
  • the semiconductor light emitting device package structure 3 further includes a fixing device 42.
  • the rear ends of the N heat conducting devices 38 are fixed to the fixing device 42.
  • FIG. 3C is a partial cross-sectional view of the semiconductor light emitting device package structure 3 of FIG. 3A along the PP line to show the semiconductor light emitting device package structure 3.
  • the unit having the same reference numerals as in FIG. 3B in FIG. 3C also performs the functions of the corresponding unit in FIG. 3B, and details are not described herein.
  • the difference from the half-body light emitting device package structure 3 in FIG. 3B is that, for the half-body light emitting device package structure 3 in FIG. 3C, the front end of each of the heat conducting devices 38 is curved. And a flat portion of each of the heat transfer devices 38 is formed on the periphery of the front end thereof.
  • FIG. 4 another variation of the half-body light emitting device package structure 3 is shown in the figure.
  • the unit having the same reference numerals as in Fig. 3A or Fig. 3B in Fig. 4 also performs the functions of the corresponding units in Figs. 3A and 3B, and will not be described again.
  • the difference from the half-emitting device package structure 3 in FIGS. 3A and 3B is that, for the half-body light-emitting device package structure 3 in FIG. 4, the fixing device 42 is an annular structure member.
  • each set of fins 40 is secured to the periphery of one of the heat conducting devices 38 of the illustrated heat conducting device 38.
  • the semiconductor light emitting device package structure disclosed in the above preferred embodiment further includes a cover having a hole for mating the substrate, the substrate being inserted into the hole of the cover to cause the N semiconductors
  • a light emitting die module is placed within the housing. The purpose of mounting the cover is to guide the light emitted by the semiconductor light emitting die module toward a specific direction.
  • the semiconductor light emitting device package structure disclosed in the above preferred embodiment further includes an optical module.
  • the optical module is mounted on a top surface of the substrate and covers the N semiconductor light emitting die modules to focus light emitted by the N semiconductor light emitting die modules.
  • the semiconductor light emitting device package structure disclosed in the above preferred embodiment further includes N optical modules, each of which is fixed on a top surface of the substrate and covers a semiconductor light emitting die module to The light emitted by the semiconductor light emitting die module is focused.
  • the semiconductor light emitting device package structure disclosed in the above preferred embodiment further includes a plurality of wires electrically connected to the external electrodes and extending to the tail end of the heat conducting device, respectively.
  • each of the semiconductor light emitting device package structures disclosed in the above preferred embodiments includes at least one white light diode.
  • one of the N semiconductor light emitting die modules may include at least one blue LED, and may also include at least one green photodiode, or at least one red photodiode.
  • one of the N semiconductor light emitting die modules includes at least one blue LED, at least one green photodiode, and at least one red photodiode.
  • the present invention provides a package structure with high heat dissipation efficiency, which is used for packaging at least one semiconductor light emitting device, and can further effectively eliminate a large amount of heat generated by a high power semiconductor light emitting device by using a heat conducting device. The problem of excessive thermal resistance of the interface between the conventional package structure and the heat dissipation module is solved.

Description

发光二极管封装结构 技术领域
本实用新型涉及一种半导体发光器件封装结构（Semiconductor light-emitting device package structure) ,并且特别地，本实用新型涉及一种针 对半导体发光管芯的多芯片模块单一封装结构 (Multi-chip module single package structure)。 背景技术
由于半导体发光器件 (Semiconductor light-emitting device, LED)具有省 电、 使用寿命长、 反应快以及适合量产等许多优点。 因此， 目前以半导体 发光器件做为光源的照明产品， 已渐成趋势。
然而， 现有的高功率的半导体发光器件在持续发亮一段时间后， 会有 温度过高的问题。 目前的半导体发光器件封装结构即普遍具有热阻过高的 问题， 进而影响发光功率、 效率。 因此， 仅仅安置散热装置的传统半导体 发光器件封装结构， 并无法有效率地降低半导体发光器件的温度。 因此， 提供一种能够良好散热的封装结构确有其必要性， 以解决封装结构与散热 模块两者间界面所具有的热阻过高的问题。 有鉴于此， 申请人开发了本实 用新型。
此外， 传统的半导体发光器件封装结构， 皆为针对单一半导体发光器 件模块进行单一封装。 为符合新型照明产品的发展， 因此， 本实用新型的 范畴即在提供一种针对半导体发光管芯的多芯片模块单一封装结构。 发明内容
因此， 本实用新型的主要范畴即在于提供一种针对半导体发光管芯的 多芯片模块单一封装结构。
根据本实用新型的一优选具体实施例的半导体发光器件封装结构， 其 包含一基板、 N个下底座以及 N个半导体发光管芯模块。 所述基板上定义 一顶表面和一底表面， 所述基板的顶表面上形成 N个第一凹陷部， 所述基 板的底表面上形成 N个第二凹陷部。 每一个第二凹陷部与一个第一凹陷部 位置相对， 并且与所述第一凹陷部相通。 所述顶表面的上设有多个外部电 极。 并且， N为一大于或等于 2的正整数。
此外， 所述 N个下底座中的每一个下底座对应一个第二凹陷部。 每一 个下底座上定义一个第一表面以及一个第二表面。 每一个下底座嵌入于所 述对应的第二凹陷部， 致使所述下底座的第一表面的一部分暴露于所述第 一凹陷部的内部。
进一步， 所述 N个半导体发光管芯模块中的每一个半导体发光管芯模 块对应一个下底座， 并且固定于所述下底座的第一表面暴露于所述对应的 第一凹陷部内部的部分上。 每一个半导体发光管芯模块本身的内电极还电 连接至所述外部电极。
关于本实用新型的优点与精神可以通过以下的实施方式及附图得到进 一步的了解。 附图说明
图 1A绘示根据本实用新型的一优选具体实施例的半导体发光器件封 装结构 1的顶视图。
图 1B是图 1A中半导体发光器件封装结构 1沿 K-K线的剖面视图。 图 2绘示图 1A中半导体发光器件封装结构 1的另一变体。
图 3A绘示根据本实用新型的另一优选具体实施例的半导体发光器件 封装结构 3的透视图。
图 3B是图 3A中半导体发光器件封装结构 3沿 0-0线的局部剖面视图。 图 3C是图 3A中半导体发光器件封装结构 3沿 P-P线的局部剖面视图 , 以显示导体发光器件封装结构 3的另一变体。
图 4绘示图 3A中半导体发光器件封装结构 3的另一变体。 具体实施方式
本实用新型提供一种半导体发光器件封装结构， 并且特别地， 是针对 半导体发光管芯的多芯片模块单一封装结构。 以下将详述本实用新型的优 选具体实施例以及实际应用实例， 由此充分说明本实用新型的特征、 精神 及优点。
请参阅图 1A以及图 1B。图 1A绘示根据本实用新型的一优选具体实施 例的半导体发光器件封装结构 1的顶视图。 图 1B是图 1A中半导体发光器 件封装结构 1沿着 K-K线的剖面视图。 如图 1A所示， 半导体发光器件封 装结构 1包含基板 (Substrate)12、N个下底座 (Sub-moimt)14以及 N个半导体 发光管芯模块 (Semiconductor light-emitting die module)16, 其中， N为一大 于或等于 2的正整数。 图 1A及图 1B中半导体发光器件封装结构 1具有三 个半导体发光管芯模块， 作为说明例。
如图 1B所示， 基板 12上定义一顶表面 122以及一底表面 124。 基板 12的顶表面 122上形成 N个第一凹陷部 126。基板 12的底表面 124上形成 N个第二凹陷部 128。每一个第二凹陷部 128与一个第一凹陷部 126位置相 对， 并且与该个第一凹陷部 126相通。 此外， 顶表面 122上设有多个外部 电极 (Outer electrode)(未绘示于图中）。
此外， N个下底座 14中的每一个下底座 14对应一个第二凹陷部 128, 每一个下底座 14上定义一个第一表面 142以及一个第二表面 144。 每一个 下底座 14嵌入于该对应的第二凹陷部 128，致使该个下底座 14的第一表面 142的一部分暴露于该个第一凹陷部 126的内部。 在实际应用中， 该 N个 下底座 14可由半导体材料、 陶瓷材料或金属材料制成。
进一步， N个半导体发光管芯模块 16中的每一个半导体发光管芯模块 16对应一个下底座 14, 并且固定于该个下底座 14的第一表面 142暴露于 对应的第一凹陷部 126内部的部分上， 每一个半导体发光管芯模块 16本身 的内电极 (Inter electrode) (未绘示于图中)还电连接至所迷外部电极。 在实际 应用中， 该基板的形状不限， 例如， 图 1A中基板 12的顶视外观为长方形。 此外， 例如， 图 2中所绘示的基板 12的顶视外观为圆形。 在图 2中具有与 图 1A相同附图标记的单元，其同样执行图 1A中相对应单元所具有的功能， 在此不多做赘迷。
在一具体实施例中， 艮据本实用新型的半导体发光器件封装结构 1 进 一步包含一封装材料 (Package material) (未绘示于图中）。 该封装材料分别填 充每一个第一凹陷部 126, 以分别覆盖每一个半导体发光管芯模块 16。
在另一具体实施例中， 4艮据本实用新型的半导体发光器件封装结构 1 进一步包含一封装材料 (未绘示于图中）。该封装材料整体性地填充所述第一 凹陷部 126， 以整体性地覆盖 N个半导体发光管芯模块 16。
在另一具体实施例中， 据本实用新型的半导体发光器件封装结构 1 进一步包含一透明的包覆壳体 (未绘示于图中）。 该包覆壳体装设于顶表面 122上， 并且整体性地包覆 N个半导体发光管芯模块 16。
在另一具体实施例中， 才艮据本实用新型的半导体发光器件封装结构 1 进一步包含 N个透明的包覆壳体 (未绘示于图中）。所述包覆壳体装设于顶表 面 122上，并且每一个包覆壳体包覆 N个半导体发光管芯模块 16中的一个 半导体发光管芯模块 16。
请参阅图 3A以及图 3B。图 3A绘示根据本实用新型的另一优选具体实 施例的半导体发光器件封装结构 3的透视图。 图 3B是图 3A中半导体发光 器件封装结构 3沿着 O-O线的局部剖面视图。 与图 1A中半导体发光器件 封装结构 1类似， 半导体发光器件封装结构 3同样包含基板 32、 N个下底 座 (未绘示于图中）以及 N个半导体发光管芯模块 34, 其中， N为一大于或 等于 2的正整数。 图 3A绘示出三个半导体发光管芯模块。
此外，半导体发光器件封装结构 3进一步包含一载台 (Carrier)36以及 N 个大体上成柱状的导热装置 (Heat-conducting device)38。 N个导热装置 38中 的每一个导热装置 38具有一个平坦部。 此外， 基板 32以本身的底表面固 定于载台 36上。 载台 36具有分别相对于一个下底座的位置的 N个通孔， 并且每一个通孔配合一个导热装置 38的插入， 致使导热装置 38的平坦部 与对应的下底座紧密接合。
在一具体实施例中， N个导热装置 38中的每一个导热装置 38分别为 一热导管 (Heat pipe)或一热导柱 (Heat column)„
在一具体实施例中， N个导热装置 38分别由铜、 铝或一种具有高导热 率的材料制成。
同样如图 3A以及图 3B所示， 半导体发光器件封装结构 3进一步包含 至少一散热鳍片（Heat-dissipating fin)40。 至少一散热鳍片 40固定于所述导 热装置 38的周围上。
同样如图 3A以及图 3B所示， 半导体发光器件封装结构 3进一步包含 固定装置 42。 N个导热装置 38的尾端固定于固定装置 42上。
请参阅图 3C,图 3C是图 3A中半导体发光器件封装结构 3沿着 P-P线 的局部剖面视图， 以显示半导体发光器件封装结构 3。 图 3C中具有与图 3B 相同附图标记的单元， 其同样执行图 3B中相对应单元所具有的功能， 在此 不多做赘述。 与图 3B中的半体发光器件封装结构 3的不同之处在于， 对于 图 3C中的半体发光器件封装结构 3，其每一个导热装置 38的前端成弯曲状， 并且每一个导热装置 38的平坦部形成于其前端的周围上。
请参阅图 4， 半体发光器件封装结构 3 的另一变体绘示于图中。 图 4 中具有与图 3A或图 3B相同附图标记的单元，其同样执行图 3A及图 3B中 相对应单元所具有的功能， 在此不多做赘述。 与图 3A及图 3B中的半体发 光器件封装结构 3不同之处在于， 对于图 4中的半体发光器件封装结构 3 , 其固定装置 42是一环状结构件。
另一不同之处在于，对于图 4中的半体发光器件封装结构 3，其也包含 N组散热鰭片 40。 每一组散热鳍片 40固定于所示导热装置 38的中的一个 导热装置 38的周围上。
在一具体实施例中， 上述优选具体实施例所公开的半导体发光器件封 装结构进一步包含一罩体， 该罩体具有一配合该基板的孔， 该基板插入该 罩体的孔致使该 N个半导体发光管芯模块置于该罩体内。 装设罩体的目的 为了将所述半导体发光管芯模块所发射的光线引导朝特定方向前进。
在一具体实施例中， 上述优选具体实施例所公开的半导体发光器件封 装结构进一步包含一光学模块。 该光学模块固定于该基板的顶表面上， 并 且覆盖该 N个半导体发光管芯模块， 以使该 N个半导体发光管芯模块所发 出的光线聚焦。
在另一具体实施例中， 上述优选具体实施例所公开的半导体发光器件 封装结构进一步包含 N个光学模块， 每一个光学模块固定于该基板的顶表 面上并且覆盖一个半导体发光管芯模块， 以使该个半导体发光管芯模块所 发出的光线聚焦。
在一具体实施例中， 上述优选具体实施例所公开的半导体发光器件封 装结构进一步包含多根导线， 该多根导线分别电连接至所述外部电极并且 延伸至所述导热装置的尾端。
在一具体实施例中， 上述优选具体实施例所公开的半导体发光器件封 装结构中的每一个半导体发光管芯模块包含至少一白光二极管。 在另一具 体实施例中， 该 N个半导体发光管芯模块中的一个半导体发光管芯模块可 包含至少一蓝光二极管， 也可包含至少一绿光二极管， 或至少一红光二极 管。 在另一具体实施例中， 该 N个半导体发光管芯模块中的一个半导体发 光管芯模块包舍至少一蓝光二极管、 至少一绿光二极管以及至少一红光二 极管。 显而易见地， 本实用新型提供了一种具有高散热效率的封装结构， 该 封装结构用以封装至少一半导体发光器件， 亦可配合导热装置进一步有效 排除高功率半导体发光器件所产生的大量热量， 以解决传统封装结构与散 热模块两者间界面所具有的热阻过高的问题。
通过以上优选具体实施例的详述， 希望能更加清楚描述本实用新型的 特征与精神， 而并非以上述所公开的优选具体实施例来对本实用新型的范 畴加以限制。 相反地， 其目的是希望能涵盖各种改变及具等同性的安排于 本实用新型的权利要求的范畴内。

Claims

权利要求
1、 一种半导体发光器件封装结构， 包含：
一基板， 所述基板上定义一顶表面和一底表面， 所述基板的所述顶表 5 面上形成 N个第一凹陷部，所述基板的所述底表面上形成 N个第二凹陷部， 每一个第二凹陷部与一个第一凹陷部位置相对并且与所述个第一四陷部相 通， 所述顶表面的上设有多个外部电极， N为一大于或等于 2的正整数；
N个下底座， 每一个下底座对应一个第二凹陷部， 每一个下底座上定 义一个第一表面以及一个第二表面， 每一个下底座嵌入于所述对应的第二 0 凹陷部致使所述个下底座的所述第一表面的一部分暴露于所述个第一凹陷 部的内部； 以及
个半导体发光管芯模块， 每一个半导体发光管芯模块对应一个下底 座， 并且固定于所述个下底座的第一表面暴露于所述对应的第一凹陷部内 部的部分上， 每一个半导体发光管芯模块本身的内电极并且电连接至所述 5 外部电极。
2、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 一封装材料， 所述封装材料分别填充每一个第一凹陷部， 以分别覆盖 每一个半导体发光管芯模块。
3、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 0 一封装材料， 所述封装材料整体性地填充所述第一凹陷部， 以整体性 地覆盖所述 N个半导体发光管芯模块。
'
4、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含：
一透明的包覆壳体， 所述包覆壳体装设于所述顶表面上， 并且整体性 地包覆所述 N个半导体发光管芯模块。
5 5、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含：
N个透明的包覆壳体， 所述包覆壳体装设于所述顶表面上， 并且每一 ' 个包覆壳体包覆所述 N个半导体发光管芯模块中的一个半导体发光管芯模 块。
6、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 0 N个导热装置， 每一个导热装置具有一个平坦部； 以及
一载台， 所述基板以所述底表面固定于所述载台上， 所述载台具有分 别相对于一个下底座的位置的 N个通孔， 每一个通孔配合一个导热装置的 插入致使所述个导热装置的平坦部与所述对应的下底座紧密接合。
7、 如权利要求 6所述的半导体发光器件封装结构， 进一步包含： 至少一散热鳍片， 所述至少一散热鰭片固定于所述导热装置的周围上。
8、 如权利要求 6所述的半导体发光器件封装结构， 进一步包含：
N组散热鳍片， 每一组散热鳍片固定于所述导热装置的中的一个导热 装置的周围上。
9、 如权利要求 6所述的半导体发光器件封装结构， 其中每一个导热装 置分别为一热导管或一热导柱。
10、 如权利要求 6所述的半导体发光器件封装结构， 其中每一个导热 装置分别由铜、 铝或一种具有高导热率的材料制成。
11、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 一光学模块， 所述光学模块固定于所述基板的顶表面上并且覆盖所述
N个半导体发光管芯模块， 以使所述 N个半导体发光管芯模块所发出的光 线聚焦。
12、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含：
N个光学模块， 每一个光学模块固定于所述基板的顶表面上并且覆盖 一个半导体发光管芯模块， 以使所述半导体发光管芯模块所发出的光线聚 焦。
13、 如权利要求 1 所述的半导体发光器件封装结构， 其中每一个下底 座由半导体材料、 陶瓷材料或金属材料制成。
14、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 一固定装置， 所述 N个导热装置的尾端固定于所述固定装置上。
15、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 导热装置的尾端。 ' 、 、 ， '、 、' ：
16、 如权利要求 1所述的半导体发光器件封装结构， 进一步包含： 一罩体， 所述罩体具有一配合所述基板的孔， 所述基板插入所述罩体 的孔致使所述 N个半导体发光管芯模块置于所述罩体内。
17、 如权利要求 1 所述的半导体发光器件封装结构， 其中每一个半导 体发光管芯模块包含至少一白光二极管。
18、 如权利要求 1所述的半导体发光器件封装结构， 其中所述 N个半 导体发光管芯模块中的一个半导体发光管芯模块包含至少一蓝光二极管。
19、 如权利要求 1所述的半导体发光器件封装结构， 其中所述 N个半 导体发光管芯模块中的一个半导体发光管芯模块包含至少一绿光二极管。
20、 如权利要求 1所述的半导体发光器件封装结构， 其中所述 N个半 导体发光管芯模块中的一个半导体发光管芯模块包含至少一红光二极管。
21、 如权利要求 1所述的半导体发光器件封装结构， 其中所述 N个半 导体发光管芯模块中的一个半导体发光管芯模块包含至少一蓝光二极管、 至少一绿光二极管以及至少一红光二极管。
PCT/CN2005/002033 2005-11-28 2005-11-28 Package structure of light-emitting diode WO2007059657A1 (en)

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