WO2007076451A3 - Body effect sensing method for non-volatile memories - Google Patents

Body effect sensing method for non-volatile memories Download PDF

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Publication number
WO2007076451A3
WO2007076451A3 PCT/US2006/062513 US2006062513W WO2007076451A3 WO 2007076451 A3 WO2007076451 A3 WO 2007076451A3 US 2006062513 W US2006062513 W US 2006062513W WO 2007076451 A3 WO2007076451 A3 WO 2007076451A3
Authority
WO
WIPO (PCT)
Prior art keywords
bit line
cell
voltage
body effect
shut
Prior art date
Application number
PCT/US2006/062513
Other languages
French (fr)
Other versions
WO2007076451A2 (en
Inventor
Nima Mokhlesi
Jeffrey W Lutze
Original Assignee
Sandisk Corp
Nima Mokhlesi
Jeffrey W Lutze
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/321,996 external-priority patent/US7349264B2/en
Priority claimed from US11/320,917 external-priority patent/US7616481B2/en
Application filed by Sandisk Corp, Nima Mokhlesi, Jeffrey W Lutze filed Critical Sandisk Corp
Priority to CN2006800494908A priority Critical patent/CN101351847B/en
Priority to KR1020087015402A priority patent/KR101357068B1/en
Priority to EP06848820A priority patent/EP1966800A2/en
Priority to JP2008548823A priority patent/JP4568365B2/en
Publication of WO2007076451A2 publication Critical patent/WO2007076451A2/en
Publication of WO2007076451A3 publication Critical patent/WO2007076451A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/565—Multilevel memory comprising elements in triple well structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Abstract

The present invention presents a scheme for sensing memory cells. Selected memory cells are discharged through their channels to ground and then have a voltage level placed on the traditional source and another voltage level placed on the control gate, and allowing the cell bit line to charge up. The bit line of the memory cell will then charge up until the bit line voltage becomes sufficiently high to shut off any further cell conduction. The rise of the bit line voltage will occur at a rate and to a level dependent upon the data state of the cell, and the cell will then shut off when the bit line reaches a high enough level such that the body effect affected memory cell threshold is reached, at which point the current essentially shuts off. A particular embodiment performs multiple such sensing sub-operations, each with a different control gate voltage, but with multiple states being sensed in each operation by charging the previously discharged cells up through their source.
PCT/US2006/062513 2005-12-28 2006-12-21 Body effect sensing method for non-volatile memories WO2007076451A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2006800494908A CN101351847B (en) 2005-12-28 2006-12-21 Alternate sensing techniques for non-volatile memory
KR1020087015402A KR101357068B1 (en) 2005-12-28 2006-12-21 Body effect sensing method for non-volatile memories
EP06848820A EP1966800A2 (en) 2005-12-28 2006-12-21 Body effect sensing method for non-volatile memories
JP2008548823A JP4568365B2 (en) 2005-12-28 2006-12-21 Alternative sensing technology for non-volatile memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/321,996 2005-12-28
US11/321,996 US7349264B2 (en) 2005-12-28 2005-12-28 Alternate sensing techniques for non-volatile memories
US11/320,917 US7616481B2 (en) 2005-12-28 2005-12-28 Memories with alternate sensing techniques
US11/320,917 2005-12-28

Publications (2)

Publication Number Publication Date
WO2007076451A2 WO2007076451A2 (en) 2007-07-05
WO2007076451A3 true WO2007076451A3 (en) 2007-09-20

Family

ID=38197637

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/062513 WO2007076451A2 (en) 2005-12-28 2006-12-21 Body effect sensing method for non-volatile memories

Country Status (5)

Country Link
EP (1) EP1966800A2 (en)
JP (1) JP4568365B2 (en)
KR (1) KR101357068B1 (en)
TW (1) TWI323464B (en)
WO (1) WO2007076451A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7616481B2 (en) 2005-12-28 2009-11-10 Sandisk Corporation Memories with alternate sensing techniques
US7349264B2 (en) 2005-12-28 2008-03-25 Sandisk Corporation Alternate sensing techniques for non-volatile memories
KR100923810B1 (en) * 2007-02-22 2009-10-27 주식회사 하이닉스반도체 Memory device and method of operating the same
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
WO2014142332A1 (en) * 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US11049557B2 (en) * 2019-07-19 2021-06-29 Macronix International Co., Ltd. Leakage current compensation in crossbar array

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0673037A1 (en) * 1994-03-15 1995-09-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5570315A (en) * 1993-09-21 1996-10-29 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
US6259627B1 (en) * 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US20020101778A1 (en) * 1995-10-06 2002-08-01 Sakhawat M. Khan Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US20060291285A1 (en) * 2003-02-06 2006-12-28 Nima Mokhlesi System and method for programming cells in non-volatile integrated memory devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08249893A (en) * 1995-03-07 1996-09-27 Toshiba Corp Semiconductor memory
JP2697665B2 (en) * 1995-03-31 1998-01-14 日本電気株式会社 Semiconductor storage device and method of reading data from semiconductor storage device
JP4246831B2 (en) * 1999-02-08 2009-04-02 株式会社東芝 Data identification method for semiconductor integrated circuit device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
US5570315A (en) * 1993-09-21 1996-10-29 Kabushiki Kaisha Toshiba Multi-state EEPROM having write-verify control circuit
EP0673037A1 (en) * 1994-03-15 1995-09-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US20020101778A1 (en) * 1995-10-06 2002-08-01 Sakhawat M. Khan Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US6259627B1 (en) * 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US20060291285A1 (en) * 2003-02-06 2006-12-28 Nima Mokhlesi System and method for programming cells in non-volatile integrated memory devices

Also Published As

Publication number Publication date
TWI323464B (en) 2010-04-11
JP4568365B2 (en) 2010-10-27
EP1966800A2 (en) 2008-09-10
JP2009522706A (en) 2009-06-11
KR101357068B1 (en) 2014-02-03
TW200741718A (en) 2007-11-01
WO2007076451A2 (en) 2007-07-05
KR20080096644A (en) 2008-10-31

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