WO2007093741A3 - Transistor mos a seuil reglable - Google Patents

Transistor mos a seuil reglable Download PDF

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Publication number
WO2007093741A3
WO2007093741A3 PCT/FR2007/050798 FR2007050798W WO2007093741A3 WO 2007093741 A3 WO2007093741 A3 WO 2007093741A3 FR 2007050798 W FR2007050798 W FR 2007050798W WO 2007093741 A3 WO2007093741 A3 WO 2007093741A3
Authority
WO
WIPO (PCT)
Prior art keywords
mos transistor
adjustable threshold
isolated
channel
substrate
Prior art date
Application number
PCT/FR2007/050798
Other languages
English (en)
Other versions
WO2007093741A2 (fr
Inventor
Pascale Mazoyer
Germain Bossu
Original Assignee
St Microelectronics Crolles 2
Pascale Mazoyer
Germain Bossu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Crolles 2, Pascale Mazoyer, Germain Bossu filed Critical St Microelectronics Crolles 2
Priority to US12/279,056 priority Critical patent/US8410539B2/en
Priority to EP07731623A priority patent/EP1994567A2/fr
Priority to JP2008553809A priority patent/JP2009527103A/ja
Publication of WO2007093741A2 publication Critical patent/WO2007093741A2/fr
Publication of WO2007093741A3 publication Critical patent/WO2007093741A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors

Abstract

L'invention concerne un transistor MOS comprenant un prolongement conducteur (10, 28) de sa région de source, isolé (11, 27) de son substrat, et s 'étendant partiellement sous son canal.
PCT/FR2007/050798 2006-02-14 2007-02-14 Transistor mos a seuil reglable WO2007093741A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/279,056 US8410539B2 (en) 2006-02-14 2007-02-14 MOS transistor with a settable threshold
EP07731623A EP1994567A2 (fr) 2006-02-14 2007-02-14 Transistor mos a seuil reglable
JP2008553809A JP2009527103A (ja) 2006-02-14 2007-02-14 閾値が調整可能なｍｏｓトランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0650525 2006-02-14
FR0650525 2006-02-14

Publications (2)

Publication Number Publication Date
WO2007093741A2 WO2007093741A2 (fr) 2007-08-23
WO2007093741A3 true WO2007093741A3 (fr) 2007-11-22

Family

ID=37069719

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2007/050798 WO2007093741A2 (fr) 2006-02-14 2007-02-14 Transistor mos a seuil reglable

Country Status (4)

Country Link
US (1) US8410539B2 (fr)
EP (1) EP1994567A2 (fr)
JP (1) JP2009527103A (fr)
WO (1) WO2007093741A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7948008B2 (en) * 2007-10-26 2011-05-24 Micron Technology, Inc. Floating body field-effect transistors, and methods of forming floating body field-effect transistors
KR101505494B1 (ko) * 2008-04-30 2015-03-24 한양대학교 산학협력단 무 커패시터 메모리 소자
CN104425262B (zh) * 2013-08-20 2017-11-14 中芯国际集成电路制造(上海)有限公司 Pmos晶体管结构及其制造方法
TWI675473B (zh) * 2015-11-16 2019-10-21 聯華電子股份有限公司 高壓半導體裝置
US10355104B2 (en) 2017-10-27 2019-07-16 Globalfoundries Inc. Single-curvature cavity for semiconductor epitaxy
US10297675B1 (en) 2017-10-27 2019-05-21 Globalfoundries Inc. Dual-curvature cavity for epitaxial semiconductor growth

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818012A1 (fr) * 2000-12-12 2002-06-14 St Microelectronics Sa Dispositif semi-conducteur integre de memoire

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064399B2 (en) * 2000-09-15 2006-06-20 Texas Instruments Incorporated Advanced CMOS using super steep retrograde wells
US6555437B1 (en) * 2001-04-27 2003-04-29 Advanced Micro Devices, Inc. Multiple halo implant in a MOSFET with raised source/drain structure
US6780776B1 (en) * 2001-12-20 2004-08-24 Advanced Micro Devices, Inc. Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
US7057234B2 (en) * 2002-12-06 2006-06-06 Cornell Research Foundation, Inc. Scalable nano-transistor and memory using back-side trapping
JP4590884B2 (ja) * 2003-06-13 2010-12-01 株式会社デンソー 半導体装置およびその製造方法
US7259083B2 (en) * 2004-10-22 2007-08-21 Lsi Corporation Local interconnect manufacturing process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818012A1 (fr) * 2000-12-12 2002-06-14 St Microelectronics Sa Dispositif semi-conducteur integre de memoire

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
MONFRAY S ET AL: "Emerging silicon-on-nothing (SON) devices technology", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 48, no. 6, June 2004 (2004-06-01), pages 887 - 895, XP004492637, ISSN: 0038-1101 *
MONFRAY S ET AL: "SON (silicon-on-nothing) technological CMOS platform: highly performant devices and SRAM cells", ELECTRON DEVICES MEETING, 2004. IEDM TECHNICAL DIGEST. IEEE INTERNATIONAL SAN FRANCISCO, CA, USA DEC. 13-15, 2004, PISCATAWAY, NJ, USA,IEEE, 13 December 2004 (2004-12-13), pages 635 - 638, XP010788873, ISBN: 0-7803-8684-1 *
RANICA R ET AL: "A NEW 40-NM SONOS STRUCTURE BASED ON BACKSIDE TRAPPING FOR NANOSCALE MEMORIES", IEEE TRANSACTIONS ON NANOTECHNOLOGY, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 4, no. 5, September 2005 (2005-09-01), pages 581 - 587, XP001238537, ISSN: 1536-125X *
See also references of EP1994567A2 *

Also Published As

Publication number Publication date
EP1994567A2 (fr) 2008-11-26
US8410539B2 (en) 2013-04-02
US20100067310A1 (en) 2010-03-18
WO2007093741A2 (fr) 2007-08-23
JP2009527103A (ja) 2009-07-23

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