WO2007111845A3 - Method and apparatus for providing a rolling double reset timing for global storage in image sensors - Google Patents

Method and apparatus for providing a rolling double reset timing for global storage in image sensors Download PDF

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Publication number
WO2007111845A3
WO2007111845A3 PCT/US2007/006597 US2007006597W WO2007111845A3 WO 2007111845 A3 WO2007111845 A3 WO 2007111845A3 US 2007006597 W US2007006597 W US 2007006597W WO 2007111845 A3 WO2007111845 A3 WO 2007111845A3
Authority
WO
WIPO (PCT)
Prior art keywords
pixels
floating diffusion
rolling double
providing
image sensors
Prior art date
Application number
PCT/US2007/006597
Other languages
French (fr)
Other versions
WO2007111845A9 (en
WO2007111845A2 (en
Inventor
Chen Xu
Parker Altice
Original Assignee
Micron Technology Inc
Chen Xu
Parker Altice
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Chen Xu, Parker Altice filed Critical Micron Technology Inc
Priority to EP07753240A priority Critical patent/EP2002647A2/en
Priority to JP2009501464A priority patent/JP2009530978A/en
Publication of WO2007111845A2 publication Critical patent/WO2007111845A2/en
Publication of WO2007111845A3 publication Critical patent/WO2007111845A3/en
Publication of WO2007111845A9 publication Critical patent/WO2007111845A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Abstract

An apparatus for and a method of operating an array of pixels of an image sensor, where each pixel includes at least a photosensor, an associated storage device and a floating diffusion region and the array of pixels is configured in a plurality of rows and columns. The photosensors associated with the pixels are reset and charges are accumulated in the photosensor. The accumulated charges are then globally transferred to storage devices associated with the pixels. A rolling double reset is used to reduce the deleterious effects on the accumulated charges stored in the storage devices. The accumulated charges stored in the storage devices are transferred to floating diffusion regions associated with the pixels and the charges residing in the floating diffusion region are read out. In a second embodiment the storage device is eliminated and the rolling double reset is used to reduce the deleterious effects on the accumulated charges stored in the floating diffusion region.
PCT/US2007/006597 2006-03-23 2007-03-16 Method and apparatus for providing a rolling double reset timing for global storage in image sensors WO2007111845A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07753240A EP2002647A2 (en) 2006-03-23 2007-03-16 Method and apparatus for providing a rolling double reset timing for global storage in image sensors
JP2009501464A JP2009530978A (en) 2006-03-23 2007-03-16 Method and apparatus for providing rolling double reset timing for global accumulation in an image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/386,678 US7427736B2 (en) 2006-03-23 2006-03-23 Method and apparatus for providing a rolling double reset timing for global storage in image sensors
US11/386,678 2006-03-23

Publications (3)

Publication Number Publication Date
WO2007111845A2 WO2007111845A2 (en) 2007-10-04
WO2007111845A3 true WO2007111845A3 (en) 2007-11-01
WO2007111845A9 WO2007111845A9 (en) 2007-12-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/006597 WO2007111845A2 (en) 2006-03-23 2007-03-16 Method and apparatus for providing a rolling double reset timing for global storage in image sensors

Country Status (7)

Country Link
US (2) US7427736B2 (en)
EP (1) EP2002647A2 (en)
JP (1) JP2009530978A (en)
KR (1) KR20080113398A (en)
CN (1) CN101406036A (en)
TW (1) TW200742404A (en)
WO (1) WO2007111845A2 (en)

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JP5355026B2 (en) * 2008-10-09 2013-11-27 キヤノン株式会社 Imaging device
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US8288701B2 (en) * 2009-03-03 2012-10-16 Aptina Imaging Corporation Method and system for controlling power to pixels in an imager
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JP2010251829A (en) * 2009-04-10 2010-11-04 Olympus Corp Solid-state image sensor, camera system, and signal reading method
JP5402349B2 (en) * 2009-07-23 2014-01-29 ソニー株式会社 Solid-state imaging device, driving method thereof, and electronic apparatus
JP5436173B2 (en) * 2009-12-02 2014-03-05 キヤノン株式会社 Solid-state imaging device
JP5521682B2 (en) * 2010-02-26 2014-06-18 ソニー株式会社 Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus
KR101874784B1 (en) 2010-03-08 2018-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
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US8150255B2 (en) * 2010-06-25 2012-04-03 Apple Inc. Flash control for electronic rolling shutter
US8836835B2 (en) * 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
KR101728713B1 (en) * 2010-10-08 2017-04-21 (주) 지안 Wide Dynamic Range CMOS Image Sensor and Image Sensing Method
CN102394239A (en) * 2011-11-24 2012-03-28 上海宏力半导体制造有限公司 Image sensor of CMOS (Complementary Metal-Oxide-Semiconductor Transistor)
WO2014069394A1 (en) * 2012-10-30 2014-05-08 株式会社島津製作所 Linear image sensor and driving method therefor
CN103096002B (en) * 2013-01-16 2016-08-03 江苏思特威电子科技有限公司 Imaging device and formation method thereof
KR102047136B1 (en) * 2013-05-20 2019-11-21 인텔렉추얼디스커버리 주식회사 Imaging device and method for driving thereof
KR102152697B1 (en) * 2013-05-20 2020-09-07 인텔렉추얼디스커버리 주식회사 Imaging device and method for driving thereof
KR102106372B1 (en) * 2013-05-20 2020-05-06 인텔렉추얼디스커버리 주식회사 Imaging device and method for driving thereof
US9491380B2 (en) 2013-09-13 2016-11-08 Semiconductor Components Industries, Llc Methods for triggering for multi-camera system
CN103811510B (en) * 2014-03-07 2016-04-06 上海华虹宏力半导体制造有限公司 Pixel cell of imageing sensor and forming method thereof
CN103986887A (en) * 2014-05-12 2014-08-13 天津大学 Device for initializing digital pixel array memory
US10044948B2 (en) * 2015-11-12 2018-08-07 Omnivision Technologies, Inc. Image sensor global shutter supply circuit with variable bandwidth
JP6702704B2 (en) * 2015-12-04 2020-06-03 キヤノン株式会社 Imaging device, imaging system, and method of driving imaging device
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Also Published As

Publication number Publication date
WO2007111845A9 (en) 2007-12-27
US20090073289A1 (en) 2009-03-19
WO2007111845A2 (en) 2007-10-04
KR20080113398A (en) 2008-12-30
US8085321B2 (en) 2011-12-27
TW200742404A (en) 2007-11-01
US7427736B2 (en) 2008-09-23
US20070221823A1 (en) 2007-09-27
JP2009530978A (en) 2009-08-27
CN101406036A (en) 2009-04-08
EP2002647A2 (en) 2008-12-17

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