WO2007123819B1 - Method for making lens features - Google Patents

Method for making lens features

Info

Publication number
WO2007123819B1
WO2007123819B1 PCT/US2007/008433 US2007008433W WO2007123819B1 WO 2007123819 B1 WO2007123819 B1 WO 2007123819B1 US 2007008433 W US2007008433 W US 2007008433W WO 2007123819 B1 WO2007123819 B1 WO 2007123819B1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
microlens
features
mask
recited
Prior art date
Application number
PCT/US2007/008433
Other languages
French (fr)
Other versions
WO2007123819A2 (en
WO2007123819A3 (en
Inventor
Gerard Schmid
Nicholas A Stacey
Douglas J Resnick
Ronald D Voisin
Lawrence J Myron
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Publication of WO2007123819A2 publication Critical patent/WO2007123819A2/en
Publication of WO2007123819A3 publication Critical patent/WO2007123819A3/en
Publication of WO2007123819B1 publication Critical patent/WO2007123819B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

A process describes a combined use of anisotropic dry etching and isotropic wet etching to produce features. The mask protecting material (301) to be etched is exposed through lithography. An anisotropic dry etch is used to generate a trench through the hole (303). The depth of this etch will increase the overall lenslet aspect ratio which is generated in the next, wet etch.

Claims

AMENDED CLAIMS received by the International Bureau on 03 October 2008 (03.10.08)Claims
1. A method for making a microlens template comprising: performing an anisotropic dry etch of a substrate through an aperture in a mask lying over the substrate resulting in a discrete hole etched into a surface of the substrate, the discrete hole having a prescribed depth and a cross-section shape similar to the aperture; performing a first isotropic wet etch of the discrete hole through the aperture to form a first shape of a microlens hemisphere; removing the mask; and performing a second a second isotropic wet etch to enhance the first shape of the hemisphere etched into the substrate.
2. The method as recited in claim 1, wherein the substrate comprises fused silica.
3. The method as recited in claim 1, wherein the second isotropic wet etch increases a diameter of the hemisphere.
4. The method as recited in claim 3, wherein the second isotropic wet etch increases an aspect ratio of the hemisphere.
5. A method for making a microlens template in a substrate comprising: performing an anisotropic dry etch of the substrate through an aperture in a mask thereby forming first features; and performing a first isotropic wet etch of the first features in the substrate through the aperture in the mask thereby forming a shape of a microlens.
6. The method as recited in claim 5, further comprising removing the mask.
7. The method as recited in claim 5, wherein the anisotropic dry etch results in a first feature as a discrete hole into the substrate at a prescribed depth and having a shape similar to the aperture.
8. The method as recited in claim 7, wherein the first isotropic wet etch is performed on to form the shape of the microlens.
9. The method as recited in claim 6, further comprising performing a second isotropic wet etch to increase a diameter of a microlens hemisphere so that it touches a neighboring microlens hemisphere enhancing the shape of the microlens.
10. The method as recited in claim 9, wherein the second wet etch is performed until there is no separation between microlens hemispheres in the substrate.
1 1. A method of processing a substrate to fabricate a microlens imprint template comprising: overlaying the substrate with a mask having a plurality of through apertures; applying a resist to a first portion of the apertures leaving a second portion of the aper- tures unmasked; performing an anisotropic dry etch of the substrate through the second portion of unmasked apertures thereby forming first features in the substrate; removing the resist on the first portion of the apertures and applying a resist over the first features; performing a first isotropic wet etch of the substrate through the first portion of the apertures in the mask thereby forming second features as microlens hemispheres in the substrate; removing the mask from over the second features; and, performing a second isotropic etch to the second features to change an aspect ratio of the microlens hemispheres.
12. The method of claim 11, further comprising removing the resist and mask over the first features thereby exposing the first and second features in the substrate.
13. The method of claim 12, wherein the first features are used as locating features for the microlens imprint template.
PCT/US2007/008433 2006-04-18 2007-04-03 Method for making lens features WO2007123819A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79275006P 2006-04-18 2006-04-18
US60/792,750 2006-04-18

Publications (3)

Publication Number Publication Date
WO2007123819A2 WO2007123819A2 (en) 2007-11-01
WO2007123819A3 WO2007123819A3 (en) 2008-10-16
WO2007123819B1 true WO2007123819B1 (en) 2008-12-04

Family

ID=38625513

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/008433 WO2007123819A2 (en) 2006-04-18 2007-04-03 Method for making lens features

Country Status (3)

Country Link
US (1) US7547398B2 (en)
TW (1) TWI338615B (en)
WO (1) WO2007123819A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7162035B1 (en) 2000-05-24 2007-01-09 Tracer Detection Technology Corp. Authentication method and system
US20080160129A1 (en) 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US20070231421A1 (en) 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7736954B2 (en) * 2005-08-26 2010-06-15 Sematech, Inc. Methods for nanoscale feature imprint molding
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
EP1957249B1 (en) 2005-12-08 2014-11-12 Canon Nanotechnologies, Inc. Method and system for double-sided patterning of substrates
US7802978B2 (en) * 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
US8142850B2 (en) * 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US7837907B2 (en) * 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
US20090147237A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Spatial Phase Feature Location
US7995196B1 (en) 2008-04-23 2011-08-09 Tracer Detection Technology Corp. Authentication method and system
US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
US8345242B2 (en) * 2008-10-28 2013-01-01 Molecular Imprints, Inc. Optical system for use in stage control
US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
US8231821B2 (en) * 2008-11-04 2012-07-31 Molecular Imprints, Inc. Substrate alignment
CN102438841A (en) * 2009-03-23 2012-05-02 因特瓦克公司 A process for optimization of island to trench ratio in patterned media
KR101772993B1 (en) * 2010-02-05 2017-08-31 캐논 나노테크놀로지즈 인코퍼레이티드 Templates having high contrast alignment marks
US20120261849A1 (en) 2011-04-14 2012-10-18 Canon Kabushiki Kaisha Imprint apparatus, and article manufacturing method using same
US8703406B2 (en) 2012-07-12 2014-04-22 Transfer Devices Inc. Method of forming large-area masters for replication of transfer lithography templates
CN102967891B (en) * 2012-11-30 2014-08-27 中国科学院半导体研究所 Method for manufacturing micro-lens array
WO2015069283A1 (en) * 2013-11-08 2015-05-14 Empire Technology Development Llc Printed ball lens and methods for their fabrication
US9955584B2 (en) * 2016-04-25 2018-04-24 Winbond Electronics Corp. Stamp for printed circuit process and method of fabricating the same and printed circuit process
US10991582B2 (en) 2016-12-21 2021-04-27 Canon Kabushiki Kaisha Template for imprint lithography including a recession, an apparatus of using the template, and a method of fabricating an article
CN113677825B (en) * 2019-04-16 2023-10-24 应用材料公司 Method for depositing film in groove
WO2021197838A1 (en) * 2020-04-03 2021-10-07 Asml Holding N.V. Systems and methods for forming structures on a surface

Family Cites Families (154)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1183056A (en) * 1966-11-29 1970-03-04 Bp Chemicals U K Ltd Formerly Metering Process for Dispensing Measured Quantities of Liquefied Gas
US4022855A (en) * 1975-03-17 1977-05-10 Eastman Kodak Company Method for making a plastic optical element having a gradient index of refraction
FR2325018A1 (en) * 1975-06-23 1977-04-15 Ibm INTERVAL MEASURING DEVICE FOR DEFINING THE DISTANCE BETWEEN TWO OR MORE FACES
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
DE3022709A1 (en) 1980-06-18 1982-01-07 Felix Schoeller jr. GmbH & Co KG, 4500 Osnabrück WATERPROOF PHOTOGRAPHIC PAPER AND METHOD FOR THE PRODUCTION THEREOF
US4576900A (en) * 1981-10-09 1986-03-18 Amdahl Corporation Integrated circuit multilevel interconnect system and method
DE3208081A1 (en) 1982-03-06 1983-09-08 Braun Ag, 6000 Frankfurt METHOD FOR PRODUCING A SHEET-LIKE SHEAR FILM FOR AN ELECTRICALLY OPERATED DRY SHAVER WITH Raises On Its Face Facing The Skin
US4440804A (en) * 1982-08-02 1984-04-03 Fairchild Camera & Instrument Corporation Lift-off process for fabricating self-aligned contacts
US4490409A (en) * 1982-09-07 1984-12-25 Energy Sciences, Inc. Process and apparatus for decorating the surfaces of electron irradiation cured coatings on radiation-sensitive substrates
US4637904A (en) * 1983-11-14 1987-01-20 Rohm And Haas Company Process for molding a polymeric layer onto a substrate
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
EP0228671A1 (en) 1985-12-23 1987-07-15 General Electric Company Method for the production of a coated substrate with controlled surface characteristics
EP0234632B1 (en) 1986-02-13 1991-01-16 Koninklijke Philips Electronics N.V. Matrix for use in a replica process
US4676868A (en) * 1986-04-23 1987-06-30 Fairchild Semiconductor Corporation Method for planarizing semiconductor substrates
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
KR900004269B1 (en) 1986-06-11 1990-06-18 가부시기가이샤 도시바 Method and device for positioing 1st body and 2nd body
JPS6376330A (en) 1986-09-18 1988-04-06 Oki Electric Ind Co Ltd Manufacture of semiconductor device
FR2604553A1 (en) 1986-09-29 1988-04-01 Rhone Poulenc Chimie RIGID POLYMER SUBSTRATE FOR OPTICAL DISC AND OPTICAL DISCS OBTAINED FROM THE SUBSTRATE
US4707218A (en) 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
JPH06104375B2 (en) * 1986-11-10 1994-12-21 松下電器産業株式会社 Printing method
JP2823016B2 (en) * 1986-12-25 1998-11-11 ソニー株式会社 Method of manufacturing transmission screen
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
US6048799A (en) * 1987-02-27 2000-04-11 Lucent Technologies Inc. Device fabrication involving surface planarization
US6391798B1 (en) * 1987-02-27 2002-05-21 Agere Systems Guardian Corp. Process for planarization a semiconductor substrate
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US5028361A (en) 1987-11-09 1991-07-02 Takeo Fujimoto Method for molding a photosensitive composition
US4936465A (en) * 1987-12-07 1990-06-26 Zoeld Tibor Method and apparatus for fast, reliable, and environmentally safe dispensing of fluids, gases and individual particles of a suspension through pressure control at well defined parts of a closed flow-through system
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
US4866307A (en) 1988-04-20 1989-09-12 Texas Instruments Incorporated Integrated programmable bit circuit using single-level poly construction
US4862019A (en) 1988-04-20 1989-08-29 Texas Instruments Incorporated Single-level poly programmable bit circuit
JPH0269936A (en) 1988-07-28 1990-03-08 Siemens Ag Method of making resin structure on semiconductor material
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
JP2546350B2 (en) 1988-09-09 1996-10-23 キヤノン株式会社 Alignment device
US4964945A (en) 1988-12-09 1990-10-23 Minnesota Mining And Manufacturing Company Lift off patterning process on a flexible substrate
US5110514A (en) * 1989-05-01 1992-05-05 Soane Technologies, Inc. Controlled casting of a shrinkable material
US5053318A (en) 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
CA2011927C (en) 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
US4919748A (en) * 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching
US5151754A (en) 1989-10-06 1992-09-29 Kabushiki Kaisha Toshiba Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects
US5362606A (en) 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
US5073230A (en) 1990-04-17 1991-12-17 Arizona Board Of Regents Acting On Behalf Of Arizona State University Means and methods of lifting and relocating an epitaxial device layer
US5003062A (en) * 1990-04-19 1991-03-26 Taiwan Semiconductor Manufacturing Co. Semiconductor planarization process for submicron devices
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5451435A (en) 1990-06-18 1995-09-19 At&T Corp. Method for forming dielectric
DE4029912A1 (en) 1990-09-21 1992-03-26 Philips Patentverwaltung METHOD FOR FORMING AT LEAST ONE TRENCH IN A SUBSTRATE LAYER
US5126006A (en) * 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5288436A (en) * 1990-11-06 1994-02-22 Colloptics, Inc. Methods of fabricating a collagen lenticule precursor for modifying the cornea
US5362940A (en) 1990-11-09 1994-11-08 Litel Instruments Use of Fresnel zone plates for material processing
US5240878A (en) 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
US5212147A (en) * 1991-05-15 1993-05-18 Hewlett-Packard Company Method of forming a patterned in-situ high Tc superconductive film
EP0524759A1 (en) 1991-07-23 1993-01-27 AT&T Corp. Device fabrication process
US5357122A (en) 1991-09-05 1994-10-18 Sony Corporation Three-dimensional optical-electronic integrated circuit device with raised sections
JPH0580530A (en) 1991-09-24 1993-04-02 Hitachi Ltd Production of thin film pattern
US5277749A (en) * 1991-10-17 1994-01-11 International Business Machines Corporation Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps
US5263073A (en) * 1991-12-20 1993-11-16 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Scanning systems for high resolution E-beam and X-ray lithography
JP2867194B2 (en) 1992-02-05 1999-03-08 東京エレクトロン株式会社 Processing device and processing method
US5244818A (en) 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5545367A (en) 1992-04-15 1996-08-13 Soane Technologies, Inc. Rapid prototype three dimensional stereolithography
US5246880A (en) 1992-04-27 1993-09-21 Eastman Kodak Company Method for creating substrate electrodes for flip chip and other applications
JP3157605B2 (en) 1992-04-28 2001-04-16 東京エレクトロン株式会社 Plasma processing equipment
US5371822A (en) 1992-06-09 1994-12-06 Digital Equipment Corporation Method of packaging and assembling opto-electronic integrated circuits
US5232874A (en) 1992-06-22 1993-08-03 Micron Technology, Inc. Method for producing a semiconductor wafer having shallow and deep buried contacts
US5376810A (en) 1992-06-26 1994-12-27 California Institute Of Technology Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
US5445195A (en) 1992-07-15 1995-08-29 Kim; Dae S. Automatic computer-controlled liquid dispenser
US5601641A (en) * 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5250472A (en) 1992-09-03 1993-10-05 Industrial Technology Research Institute Spin-on-glass integration planarization having siloxane partial etchback and silicate processes
US5431777A (en) 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
TW227628B (en) * 1992-12-10 1994-08-01 Samsung Electronics Co Ltd
DE69405451T2 (en) * 1993-03-16 1998-03-12 Koninkl Philips Electronics Nv Method and device for producing a structured relief image from cross-linked photoresist on a flat substrate surface
US5348616A (en) * 1993-05-03 1994-09-20 Motorola, Inc. Method for patterning a mold
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
JP2837063B2 (en) * 1993-06-04 1998-12-14 シャープ株式会社 Method of forming resist pattern
US5512131A (en) * 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US5449117A (en) 1993-10-04 1995-09-12 Technical Concepts, L.P. Apparatus and method for controllably dispensing drops of liquid
US5900160A (en) * 1993-10-04 1999-05-04 President And Fellows Of Harvard College Methods of etching articles via microcontact printing
US5776748A (en) 1993-10-04 1998-07-07 President And Fellows Of Harvard College Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor
US6180239B1 (en) * 1993-10-04 2001-01-30 President And Fellows Of Harvard College Microcontact printing on surfaces and derivative articles
NL9401260A (en) * 1993-11-12 1995-06-01 Cornelis Johannes Maria Van Ri Membrane for microfiltration, ultrafiltration, gas separation and catalysis, method for manufacturing such a membrane, mold for manufacturing such a membrane, as well as various separation systems comprising such a membrane.
US5434107A (en) 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
DE4408537A1 (en) * 1994-03-14 1995-09-21 Leybold Ag Device for the transport of substrates
US5542605A (en) 1994-04-07 1996-08-06 Flow-Rite Controls, Ltd. Automatic liquid dispenser
US5453157A (en) 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
DE69509046T2 (en) 1994-11-30 1999-10-21 Applied Materials Inc Plasma reactors for the treatment of semiconductor wafers
US5458520A (en) 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5628917A (en) * 1995-02-03 1997-05-13 Cornell Research Foundation, Inc. Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures
US5849209A (en) 1995-03-31 1998-12-15 Johnson & Johnson Vision Products, Inc. Mold material made with additives
US5843363A (en) 1995-03-31 1998-12-01 Siemens Aktiengesellschaft Ablation patterning of multi-layered structures
GB9509487D0 (en) * 1995-05-10 1995-07-05 Ici Plc Micro relief element & preparation thereof
US5820769A (en) 1995-05-24 1998-10-13 Regents Of The University Of Minnesota Method for making magnetic storage having discrete elements with quantized magnetic moments
US5654238A (en) 1995-08-03 1997-08-05 International Business Machines Corporation Method for etching vertical contact holes without substrate damage caused by directional etching
US5849222A (en) 1995-09-29 1998-12-15 Johnson & Johnson Vision Products, Inc. Method for reducing lens hole defects in production of contact lens blanks
US6518189B1 (en) * 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US20040036201A1 (en) * 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US5669303A (en) 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6355198B1 (en) * 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
JPH09283621A (en) 1996-04-10 1997-10-31 Murata Mfg Co Ltd Formation of t-type gate electrode of semiconductor device and structure thereof
US5942443A (en) * 1996-06-28 1999-08-24 Caliper Technologies Corporation High throughput screening assay systems in microscale fluidic devices
US5888650A (en) * 1996-06-03 1999-03-30 Minnesota Mining And Manufacturing Company Temperature-responsive adhesive article
US6074827A (en) * 1996-07-30 2000-06-13 Aclara Biosciences, Inc. Microfluidic method for nucleic acid purification and processing
US5858580A (en) * 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
JPH10123534A (en) * 1996-10-23 1998-05-15 Toshiba Corp Liquid crystal display element
US5895263A (en) * 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
US5817579A (en) 1997-04-09 1998-10-06 Vanguard International Semiconductor Corporation Two step plasma etch method for forming self aligned contact
US5948470A (en) 1997-04-28 1999-09-07 Harrison; Christopher Method of nanoscale patterning and products made thereby
US5812629A (en) 1997-04-30 1998-09-22 Clauser; John F. Ultrahigh resolution interferometric x-ray imaging
US5926690A (en) 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US5907782A (en) * 1998-08-15 1999-05-25 Acer Semiconductor Manufacturing Inc. Method of forming a multiple fin-pillar capacitor for a high density dram cell
US6207493B1 (en) * 1998-08-19 2001-03-27 International Business Machines Corporation Formation of out-diffused bitline by laser anneal
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6247986B1 (en) * 1998-12-23 2001-06-19 3M Innovative Properties Company Method for precise molding and alignment of structures on a substrate using a stretchable mold
US6521536B1 (en) * 1999-01-11 2003-02-18 Micron Technology, Inc. Planarization process
US6565928B2 (en) * 1999-03-08 2003-05-20 Tokyo Electron Limited Film forming method and film forming apparatus
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6387783B1 (en) * 1999-04-26 2002-05-14 International Business Machines Corporation Methods of T-gate fabrication using a hybrid resist
US6255022B1 (en) * 1999-06-17 2001-07-03 Taiwan Semiconductor Manufacturing Company Dry development process for a bi-layer resist system utilized to reduce microloading
EP1065567A3 (en) * 1999-06-29 2001-05-16 Applied Materials, Inc. Integrated critical dimension control
US6379573B1 (en) * 1999-07-13 2002-04-30 University Of Honolulu Self-limiting isotropic wet etching process
US6383928B1 (en) * 1999-09-02 2002-05-07 Texas Instruments Incorporated Post copper CMP clean
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
AU779699B2 (en) * 1999-12-23 2005-02-10 Universitat Konstanz Methods and apparatus for forming submicron patterns on films
US6376379B1 (en) * 2000-02-01 2002-04-23 Chartered Semiconductor Manufacturing Ltd. Method of hard mask patterning
US6337262B1 (en) * 2000-03-06 2002-01-08 Chartered Semiconductor Manufacturing Ltd. Self aligned T-top gate process integration
US6387330B1 (en) * 2000-04-12 2002-05-14 George Steven Bova Method and apparatus for storing and dispensing reagents
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US20050037143A1 (en) * 2000-07-18 2005-02-17 Chou Stephen Y. Imprint lithography with improved monitoring and control and apparatus therefor
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
KR100350811B1 (en) * 2000-08-19 2002-09-05 삼성전자 주식회사 Metal Via Contact of Semiconductor Devices and Method of Forming it
US6879162B2 (en) * 2000-11-07 2005-04-12 Sri International System and method of micro-fluidic handling and dispensing using micro-nozzle structures
US6790763B2 (en) * 2000-12-04 2004-09-14 Ebara Corporation Substrate processing method
US6517977B2 (en) * 2001-03-28 2003-02-11 Motorola, Inc. Lithographic template and method of formation and use
US6847433B2 (en) * 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
US6678038B2 (en) * 2001-08-03 2004-01-13 Nikon Corporation Apparatus and methods for detecting tool-induced shift in microlithography apparatus
CN100347608C (en) * 2001-09-25 2007-11-07 米卢塔技术株式会社 Method for forming a micro-pattern on a substrate by using capillary force
US20030080472A1 (en) * 2001-10-29 2003-05-01 Chou Stephen Y. Lithographic method with bonded release layer for molding small patterns
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US6849558B2 (en) * 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
KR100486727B1 (en) * 2002-11-14 2005-05-03 삼성전자주식회사 Fabrication method of planar lens
US7790231B2 (en) * 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
JP4322096B2 (en) * 2003-11-14 2009-08-26 Ｔｄｋ株式会社 RESIST PATTERN FORMING METHOD, MAGNETIC RECORDING MEDIUM, AND MAGNETIC HEAD MANUFACTURING METHOD
US20060017876A1 (en) * 2004-07-23 2006-01-26 Molecular Imprints, Inc. Displays and method for fabricating displays
KR100618861B1 (en) * 2004-09-09 2006-08-31 삼성전자주식회사 Semiconductor device having local recess channel transistor and method of fabricating the same
US7029944B1 (en) * 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
JP2006133334A (en) * 2004-11-02 2006-05-25 Seiko Epson Corp Member with recessed part, method for manufacturing member with projection part, the member with projection part, transmission-type screen and rear-type projector

Also Published As

Publication number Publication date
TWI338615B (en) 2011-03-11
WO2007123819A2 (en) 2007-11-01
US7547398B2 (en) 2009-06-16
US20070243655A1 (en) 2007-10-18
TW200744831A (en) 2007-12-16
WO2007123819A3 (en) 2008-10-16

Similar Documents

Publication Publication Date Title
WO2007123819B1 (en) Method for making lens features
WO2007002426A3 (en) Semiconductor device structures and methods of forming semiconductor structures
JP2009505424A5 (en)
WO2006096528A3 (en) Stabilized photoresist structure for etching process
EP1884989A3 (en) Semiconductor device and method of manufacturing the same
WO2008033695A3 (en) Efficient pitch multiplication process
TW200702903A (en) Multiple mask process with etch mask stack
KR100895367B1 (en) Method of manufacturing frame mold for micro lenses
TW200712791A (en) Manufacture method for micro structure
US20120175745A1 (en) Methods for fabricating semiconductor devices and semiconductor devices using the same
KR20100006012A (en) Method for forming fine patterns of semiconductor device by using spacer patterning process
TW201019371A (en) Method for forming micro-pattern in semiconductor device
JP2011165855A (en) Pattern forming method
US10031414B2 (en) Template, method of manufacturing the same, and imprint method
JP2007133153A5 (en)
TW200612479A (en) Method for fabricating semiconductor device using tungsten as sacrificial hard mask
JP2009212163A (en) Method of fabricating semiconductor device
WO2004102277A3 (en) Method providing an improved bi-layer photoresist pattern
JP2008091824A5 (en)
WO2005061378A3 (en) Equipment and process for creating a custom sloped etch in a substrate
US20160067910A1 (en) Template, template manufacturing method, and imprinting method
TW200717663A (en) Method of forming gate electrode structures
US20140004221A1 (en) Nanoimprinting mold
KR100649006B1 (en) method for manufacturing of CMOS image sensor
US9373772B2 (en) CMOS integrated method for the release of thermopile pixel on a substrate by using anisotropic and isotropic etching

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07754878

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07754878

Country of ref document: EP

Kind code of ref document: A2