WO2007130087A2 - Shielding of integrated circuit package with high-permeability magnetic material - Google Patents

Shielding of integrated circuit package with high-permeability magnetic material Download PDF

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Publication number
WO2007130087A2
WO2007130087A2 PCT/US2006/022773 US2006022773W WO2007130087A2 WO 2007130087 A2 WO2007130087 A2 WO 2007130087A2 US 2006022773 W US2006022773 W US 2006022773W WO 2007130087 A2 WO2007130087 A2 WO 2007130087A2
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WO
WIPO (PCT)
Prior art keywords
ultra
resonant structure
small resonant
group
ionizer
Prior art date
Application number
PCT/US2006/022773
Other languages
French (fr)
Other versions
WO2007130087A3 (en
Inventor
Jonathan Gorrell
Original Assignee
Virgin Islands Microsystems, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Virgin Islands Microsystems, Inc. filed Critical Virgin Islands Microsystems, Inc.
Publication of WO2007130087A2 publication Critical patent/WO2007130087A2/en
Publication of WO2007130087A3 publication Critical patent/WO2007130087A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/526—Electromagnetic shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A device includes at least one ultra-small resonant structure; and shielding constructed and adapted to shield at least a portion of said ultra-small resonant structure with a high-permeability magnetic material. The magnetic material is formed from a substance selected from a non-conductive magnetic oxide such as a ferrite; a cobaltite, a chromite, and a manganite. The magnetic material may be mumetal, permalloy, Hipernom, HyMu-80, supermalloy, supermumetal, nilomag, sanbold, Mo-Permalloy, Ultraperm, or M-1040.

Description

SHIELDING OF INTEGRATED CIRCUIT PACKAGE WLTH HLGH- PERMEABILITY MAGNETIC MATERIAL
COPYRIGHT NOTICE
[0001] A portion of the disclosure of this patent document contains material which is subject to copyright or mask work protection. The copyright or mask work owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all copyright or mask work rights whatsoever.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] The present invention is related to the following co-pending U.S. Patent applications which are all commonly owned with the present application, the entire contents of each of which are incorporated herein by reference:
(1) U.S. Patent Application No. 11/238,991, filed September 30, 2005, entitled
"Ultra-Small Resonating Charged Particle Beam Modulator";
(2) U.S. Patent Application No. 10/917,511, filed on August 13, 2004, entitled
"Patterning Thin Metal Film by Dry Reactive Ion Etching";
(3) U.S. Application No. 11/203,407, filed on August 15, 2005, entitled "Method Of Patterning Ultra-Small Structures";
(4) U.S. Application No. 11/243,476, filed on October 5, 2005, entitled
"Structures And Methods For Coupling Energy From An Electromagnetic Wave";
(5) U.S. Application No. 11/243,477, filed on October 5, 2005, entitled
"Electron beam induced resonance,"
(6) U.S. Application no. 11/325,448, entitled "Selectable Frequency Light Emitter from Single Metal Layer," filed January 5, 2006;
(7) U.S. Application No. 11/325,432, entitled, "Matrix Array Display," filed January 5, 2006; (8) U.S. Application No. 11/410,924, entitled, "Selectable Frequency EMR Emitter," filed April 26, 2006;
(9) U.S. Application No. 11/ , , entitled, "Multiplexed Optical
Communication between Chips on A Multi-Chip Module," filed on even date herewith [atty. docket 2549-0035];
(10) U.S. Patent Application No. 11/400,280, titled "Micro Resonant Detector for Optical Signals on a Chip," filed April 10, 2006.
FIELD Or THE DISCLOSURE
[0003] This relates to ultra-small electronic devices, and, more particularly, shielding such devices within integrated circuits.
BACKGROUND & INTRODUCTION
[0004] The related applications describe various ultra-small resonant structures
(URSs) and devices formed therefrom. As described in the related applications, the ultra- small resonant structures may emit electromagnetic radiation (EMR) at a wide range of frequencies (e.g., visible light), and often at a frequency higher than that of microwave. EMR is emitted from the a resonant structure when the resonant structure is exposed to a beam of charged particles ejected from or emitted by a source of charged particles. The source may be controlled, e.g., by applying a signal on data input. The source can be any desired source of charged particles such as an ion gun, a thermionic filament, tungsten filament, a cathode, a vacuum triode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a field emission cathode, a chemical ionizer, a thermal ionizer, an ion- impact ionizer, an electron source from a scanning electron microscope, etc. The particles may be positive ions, negative ions, electrons, and protons and the like. [0005] The ultra-small resonant structures may be formed in or on integrated circuits (ICs), multi-chip modules (MCMs) or the like.
[0006] As described in the related applications, the ultra-small resonant structures are preferably under vacuum conditions during operation. Vacuum conditions prevent, to some degree, interaction of charged particle beams with stray atomic particles. Accordingly, entire integrated packages / circuits (which includes the IC and ultra-small resonant structures) may be vacuum packaged. Alternatively, a portion of a package containing at least the ultra-small resonant structure(s) should be vacuum packaged. Known hermetic sealing techniques can be employed to ensure the vacuum condition remains during a reasonable lifespan of operation.
[0007] However, while vacuum conditions provide some protection from stray particles, there may be other sources of interference with the charged particle beams. These other sources include, e.g., stray electric, magnetic and/or electromagnetic fields. Accordingly, it is desirable to shield the structures from stray electric, magnetic and/or electromagnetic fields.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The following description, given with respect to the attached drawing, may be better understood with reference to the non-limiting examples of the drawing, wherein the figure shows a shielded IC package.
THE PRESENTLY PREFERRED EXEMPLARY EMBODIMENTS
[0009] The figure shows an integrated structure 100 in which IC 102 is integrated with an ultra-small resonant structure (URS) 104. The IC may be any IC formed, e.g., with conventional semiconductor processing. The ultra-small resonant structure(s) may be any ultra-small resonant structure(s). Exemplary ultra-small resonant structures are described in the various related applications which have been incorporated herein by. reference. Although only one ultra-small resonant structure, those skilled in the art will realize and understand, upon reading this description, that many such structures may be provided.
[0010] As noted above, the ultra-small resonant structure(s) use a charged particle beam (e.g., an electron beam) to create and/or detect EMR, including in the optical frequency ranges. [0011] A source 106 of charged particles 108 is also provided. The source 106 may be formed on the same IC as the URS 104, or it may be located elsewhere (e.g., on another chip or IC).
[0012) Shielding 110 is provided to prevent interference with the charged particle beam 108 from other sources such as, stray electric, magnetic and/or electromagnetic fields. The shielding 110 may be formed around the entire IC or to protect only parts thereof.
[0013] Preferably the shielding 110 is formed from a high-permeability magnetic material, e.g., non-conductive magnetic oxides such as the ferrites MnFe2 O4, FeFe2 O4, CoFe2 O4, NiFe2 O4, CuFe2 O4, .UIdVOr MgFe2O4. Cobaltites, chromites, manganites and other materials. Commercially-available shielding materials, e.g., ferromagnetic shielding materials generally, specific shielding materials sold under the trade names MUMETAL, PERMALLOY, etc., and others may also be used. [0014] MuMetal is a nickel-iron alloy (composed of 77% nickel, 15% iron, plus copper and molybdenum) that has a high magnetic permeability and that is highly effective for shielding magnetic fields. MuMetal is one trade name for a high- permeability, magnetically "soft" alloy. Other trade names include Hipernom, HyMu-80 and Permalloy.
[0015] High permeability makes mumetal effective at screening static or low- frequency magnetic fields, which cannot generally be attenuated by other methods. (See, e.g., "Shielding and Guarding, How to Exclude Interference-Type Noise, What to do and why to do it - A Rational Approach," Alan Rich, Analog Devices, Application Note AN- 347, Analog Dialog 1983, the entire contents of which are incorporated herein by reference.)
[0016] Both conductive and non-conductive shielding materials may be used, depending e.g., on proximity to integrated circuit packages or other electronics in the device. [0017] Depending on the type of shielding," if may be ap'pnWby πϊco"rr>δraTirIg It " into other supporting material, and/or it may be applied (e.g., by spraying or sputtering) onto an IC assembly.
[0018] Magnetic shielding may also be used within, e.g., integrated circuit packages, MCM packages and the like.
[0019] Those skilled in the art will realize and understand, upon reading this description, that different and/or other materials with similar magnetic properties may be used, e.g., supermalloy, supermumetal, nilomag, sanbold, Mo-Permalloy, Ultraperm, M- 1040, and the like.
[0020] The ultra-small resonant structures may be made, e.g., using techniques such as described in U.S. Patent Application No. 10/917,511, entitled "Patterning Thin Metal Film by Dry Reactive Ion Etching" and/or U.S. Application No. 11/203,407, entitled "Method Of Patterning Ultra-Small Structures," both of which have been incorporated herein by reference.
[0021] The ultra-small resonant structure may comprise any number of resonant microstructures constructed and adapted to produce EMR, e.g., as described above and/or in any of the related applications, including U.S. Applications nos. 11/325,448; 11/325,432; 11/243,476; 11/243,477; 11/302,471; 11/400,280; and 11/410,924, each of which is described in greater detail above in the Section headed "Cross-Reference To Related Applications," and each of which is fully incorporated herein by reference. [0022] While certain configurations of structures have been illustrated for the purposes of presenting the basic structures of the present invention, one of ordinary skill in the art will appreciate that other variations are possible which would still fall within the scope of the appended claims. While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

CLAIMSWe claim:
1. A method making a device comprising: forming a ultra-small resonant structure; and shielding at least a portion of said ultra-small resonant structure with a high- permeability magnetic material.
2. A method as in claim 1 wherein said magnetic material is formed from a substance selected from a non-conductive magnetic oxide.
3. A method as in claim 2 wherein the non-conductive magnetic oxide is selected from the group comprising: a ferrite; a cobaltite, a chromite, and a manganite.
4. A method as in claim 3 wherein the ferrite is selected from the group comprising: MnFe2 O4, FeFe2 O4, CoFe2 O4, NiFe2 O4, CuFe2 O4, and MgFe2 O4.
5. A method as in claim 1 wherein the magnetic material comprises a metal selected from the group comprising: mumetal, permalloy, Hipernom, HyMu-80, supermalloy, supermumetal, nilomag, sanbold, Mo-Permalloy, Ultraperm, and M- 1040.
6. A method as in any one of claims 1-5 wherein said ultra-small resonant structure is constructed and adapted to emit electromagnetic radiation (EMR) in response to excitation by a beam of charged particles.
7. A method as in any one of claims 1-6 wherein said ultra-small resonant structure is constructed and adapted to detect electromagnetic radiation (EMR).
8. A method as in any one of claims 1-6 wherein said ultra-small resonant structure includes a source of charged particles.
9. A method as in claim 8 wherein said source of charged particles is selected from the group comprising: an ion gun, a thermionic filament, tungsten filament, a cathode, a vacuum triode, a field emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.
10. A method as in claim 8 wherein the charged particles are selected from the group comprising: positive ions, negative ions, electrons, and protons.
11. A method as in claim 1 wherein the ultra-small resonant structure is constructed and adapted to emit at least one of visible light, infrared light, and ultraviolet light.
12. A method as in claim 1 wherein the ultra-small resonant structure is formed on a surface of an integrated circuit (IC).
13. A method as in claim 12 further comprising: electrically connecting said ultra-small resonant structure to said IC.
14. A method as in claim 1 further comprising: vacuum packaging at least said ultra-small resonant structure.
15. A device comprising: at least one ultra-small resonant structure; and shielding constructed and adapted to shield at least a portion of said ultra-small resonant structure with a high-permeability magnetic material.
16. A device as in claim 15 wherein said magnetic material is formed from a substance selected from a non-conductive magnetic oxide.
17. A device as in claim 16 wherein the non-conductive magnetic oxide is selected from the group comprising: a ferrite; a cobaltite, a chromite, and a manganite.
18. A device as in claim 17 wherein the ferrite is selected from the group comprising: MnFe2 O4, FeFe2 O4, CoFe2 O4, NiFe2 O4, CuFe2 O4, and MgFe2 O4.
19. A device as in claim 15 wherein the magnetic material comprises a metal selected from the group comprising: mumetal, permalloy, Hipernom, HyMu-80, supermalloy, supermumetal, nilomag, sanbold, Mo-Permalloy, Ultraperm, and M-1040.
20. A device as in any one of claims 15-19 wherein said ultra-small resonant structure is constructed and adapted to emit electromagnetic radiation (EMR) in response to excitation by a beam of charged particles.
21. A device as in any one of claims 15-19 wherein said ultra-small resonant structure is constructed and adapted to detect electromagnetic radiation (EMR).
22. A device as in any one of claims 15-19 wherein said ultra-small resonant structure includes a source of charged particles.
23. A device as in claim 22 wherein said source of charged particles is selected from the group comprising: an ion gun, a thermionic filament, tungsten filament, a cathode, a vacuum triode, a field emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.
24. A device as in claim 23 wherein the charged particles are selected from the group comprising: positive ions, negative ions, electrons, and protons.
25. A device as in claim 15 wherein the ultra-small resonant structure is constructed and adapted to emit at least one of visible light, infrared light, and ultraviolet light.
26. A device as in claim 15 wherein the ultra-small resonant structure is formed on a surface of an integrated circuit (IC).
27. A device as in claim 26 wherein the ultra-small resonant structure is electrically connected to said IC.
28. A device as in claim 15 wherein at least said ultra-small resonant structure is vacuum packaged.
PCT/US2006/022773 2006-05-05 2006-06-12 Shielding of integrated circuit package with high-permeability magnetic material WO2007130087A2 (en)

Applications Claiming Priority (2)

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US11/418,083 2006-05-05
US11/418,083 US7728702B2 (en) 2006-05-05 2006-05-05 Shielding of integrated circuit package with high-permeability magnetic material

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WO2007130087A3 WO2007130087A3 (en) 2009-05-14

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CN107619269A (en) * 2017-10-16 2018-01-23 武汉科技大学 Aluminium cell side wall founding nickel magnesium iron composite spinelle brick and preparation method thereof

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