WO2007134277A3 - Maintenance operations for multi-level data storage cells - Google Patents

Maintenance operations for multi-level data storage cells Download PDF

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Publication number
WO2007134277A3
WO2007134277A3 PCT/US2007/068851 US2007068851W WO2007134277A3 WO 2007134277 A3 WO2007134277 A3 WO 2007134277A3 US 2007068851 W US2007068851 W US 2007068851W WO 2007134277 A3 WO2007134277 A3 WO 2007134277A3
Authority
WO
WIPO (PCT)
Prior art keywords
data values
memory cells
data storage
level data
storage cells
Prior art date
Application number
PCT/US2007/068851
Other languages
French (fr)
Other versions
WO2007134277A2 (en
Inventor
Michael J Cornwell
Christopher P Dudte
Original Assignee
Apple Inc
Michael J Cornwell
Christopher P Dudte
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009511191A priority Critical patent/JP5358431B2/en
Priority to KR1020127021508A priority patent/KR101217416B1/en
Application filed by Apple Inc, Michael J Cornwell, Christopher P Dudte filed Critical Apple Inc
Priority to KR1020127021504A priority patent/KR101206714B1/en
Priority to KR1020127021507A priority patent/KR101283145B1/en
Priority to KR1020117010647A priority patent/KR101116512B1/en
Priority to AT07762158T priority patent/ATE475183T1/en
Priority to KR1020127021506A priority patent/KR101217438B1/en
Priority to KR1020127021505A priority patent/KR101206630B1/en
Priority to KR1020117010651A priority patent/KR101116554B1/en
Priority to KR1020117028407A priority patent/KR101184557B1/en
Priority to EP07762158A priority patent/EP2022058B1/en
Priority to DE602007007938T priority patent/DE602007007938D1/en
Priority to KR1020117010646A priority patent/KR101193696B1/en
Priority to CN2007800248486A priority patent/CN101484947B/en
Priority to KR1020117028405A priority patent/KR101184554B1/en
Priority to KR1020117010652A priority patent/KR101133897B1/en
Priority to KR1020117010645A priority patent/KR101121493B1/en
Priority to KR1020117010649A priority patent/KR101116468B1/en
Priority to KR1020117010650A priority patent/KR101151597B1/en
Priority to KR1020117028408A priority patent/KR101155751B1/en
Priority to KR1020087030400A priority patent/KR101173721B1/en
Publication of WO2007134277A2 publication Critical patent/WO2007134277A2/en
Publication of WO2007134277A3 publication Critical patent/WO2007134277A3/en
Priority to HK09106767.9A priority patent/HK1127155A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Abstract

Systems and methods, including computer software, for reading data from a flash memory cell (124) involve detecting voltages from a group of memory cells. The group of memory cells have associated metadata for error detection (605), and each memory cell stores a voltage representing a data value selected from a plurality of possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages (610). Alternative data values for the memory cells having the uncertain data values are determined (615). A combination of alternative data values is selected (625), and an error detection test is performed (635) using the metadata associated with the memory cells and the selected combination of alternative data values.
PCT/US2007/068851 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells WO2007134277A2 (en)

Priority Applications (22)

Application Number Priority Date Filing Date Title
KR1020117010646A KR101193696B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
DE602007007938T DE602007007938D1 (en) 2006-05-15 2007-05-14 MAINTENANCE WORK FOR MULTI-STAGE DATA STORAGE CELLS
KR1020127021504A KR101206714B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020127021508A KR101217416B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117010647A KR101116512B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
AT07762158T ATE475183T1 (en) 2006-05-15 2007-05-14 MAINTENANCE WORK FOR MULTI-LEVEL DATA STORAGE CELLS
CN2007800248486A CN101484947B (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020127021505A KR101206630B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117010651A KR101116554B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117028407A KR101184557B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
EP07762158A EP2022058B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
JP2009511191A JP5358431B2 (en) 2006-05-15 2007-05-14 Multilevel data storage cell maintenance operation
KR1020127021507A KR101283145B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020127021506A KR101217438B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117028405A KR101184554B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117010652A KR101133897B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117010645A KR101121493B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117010649A KR101116468B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117010650A KR101151597B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020117028408A KR101155751B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
KR1020087030400A KR101173721B1 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells
HK09106767.9A HK1127155A1 (en) 2006-05-15 2009-07-23 Maintenance operations for multi-level data storage cells

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80035706P 2006-05-15 2006-05-15
US60/800,357 2006-05-15
US11/694,739 US7639542B2 (en) 2006-05-15 2007-03-30 Maintenance operations for multi-level data storage cells
US11/694,739 2007-03-30

Publications (2)

Publication Number Publication Date
WO2007134277A2 WO2007134277A2 (en) 2007-11-22
WO2007134277A3 true WO2007134277A3 (en) 2008-08-14

Family

ID=38684942

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/068851 WO2007134277A2 (en) 2006-05-15 2007-05-14 Maintenance operations for multi-level data storage cells

Country Status (10)

Country Link
US (3) US7639542B2 (en)
EP (10) EP2333781A1 (en)
JP (1) JP5358431B2 (en)
KR (16) KR101193696B1 (en)
CN (3) CN102779554B (en)
AT (2) ATE475183T1 (en)
DE (1) DE602007007938D1 (en)
ES (2) ES2383588T3 (en)
HK (3) HK1127155A1 (en)
WO (1) WO2007134277A2 (en)

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