WO2007143498A3 - Non-volatile memory embedded in a conventional logic process and methods for operating same - Google Patents

Non-volatile memory embedded in a conventional logic process and methods for operating same Download PDF

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Publication number
WO2007143498A3
WO2007143498A3 PCT/US2007/070080 US2007070080W WO2007143498A3 WO 2007143498 A3 WO2007143498 A3 WO 2007143498A3 US 2007070080 W US2007070080 W US 2007070080W WO 2007143498 A3 WO2007143498 A3 WO 2007143498A3
Authority
WO
WIPO (PCT)
Prior art keywords
coupled
row
access transistor
volatile memory
cells
Prior art date
Application number
PCT/US2007/070080
Other languages
French (fr)
Other versions
WO2007143498B1 (en
WO2007143498A2 (en
Inventor
Gang-Feng Fang
Wingyu Leung
Original Assignee
Mosys Inc
Gang-Feng Fang
Wingyu Leung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosys Inc, Gang-Feng Fang, Wingyu Leung filed Critical Mosys Inc
Priority to JP2009513454A priority Critical patent/JP2009540545A/en
Priority to EP07797926A priority patent/EP2036094A4/en
Publication of WO2007143498A2 publication Critical patent/WO2007143498A2/en
Publication of WO2007143498A3 publication Critical patent/WO2007143498A3/en
Publication of WO2007143498B1 publication Critical patent/WO2007143498B1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer

Abstract

A non-volatile memory system (301) including an array of cells (100), each having an access transistor (110) and a capacitor (120) sharing a floating gate (116) The access transistors (110) in each row are fabricated in separate well regions (NWO), which are independently biased Within each row, the source of each access transistor (111) is coupled to a corresponding virtual ground line (VG), and each capacitor structure (120) is coupled to a corresponding word line (122) Alternately, the source of each access transistor (111) in a column is coupled to a corresponding virtual ground line (VG) Within each column, the drain of each access transistor (112) is coupled to a corresponding bit line (BL) Select memory cells in each row are programmed by band-to-band tunneling Bit line biasing prevents programming of non-selected cells of the row Programming is prevented in non-selected rows by controlling the well region voltages of these rows Sector erase operations are implemented by Fowler-Nordheim tunneling.
PCT/US2007/070080 2006-06-02 2007-05-31 Non-volatile memory embedded in a conventional logic process and methods for operating same WO2007143498A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009513454A JP2009540545A (en) 2006-06-02 2007-05-31 Nonvolatile memory embedded in a conventional logic process and method of operating such a nonvolatile memory
EP07797926A EP2036094A4 (en) 2006-06-02 2007-05-31 Non-volatile memory embedded in a conventional logic process and methods for operating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/421,986 2006-06-02
US11/421,986 US7382658B2 (en) 2006-01-26 2006-06-02 Non-volatile memory embedded in a conventional logic process and methods for operating same

Publications (3)

Publication Number Publication Date
WO2007143498A2 WO2007143498A2 (en) 2007-12-13
WO2007143498A3 true WO2007143498A3 (en) 2008-06-19
WO2007143498B1 WO2007143498B1 (en) 2008-08-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/070080 WO2007143498A2 (en) 2006-06-02 2007-05-31 Non-volatile memory embedded in a conventional logic process and methods for operating same

Country Status (6)

Country Link
US (5) US7382658B2 (en)
EP (1) EP2036094A4 (en)
JP (1) JP2009540545A (en)
KR (1) KR20090014363A (en)
TW (1) TW200746148A (en)
WO (1) WO2007143498A2 (en)

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Also Published As

Publication number Publication date
US20080137438A1 (en) 2008-06-12
US7522456B2 (en) 2009-04-21
TW200746148A (en) 2007-12-16
US20080137437A1 (en) 2008-06-12
KR20090014363A (en) 2009-02-10
EP2036094A4 (en) 2009-07-22
US20080137410A1 (en) 2008-06-12
WO2007143498B1 (en) 2008-08-28
US20080186778A1 (en) 2008-08-07
US7633811B2 (en) 2009-12-15
WO2007143498A2 (en) 2007-12-13
US7633810B2 (en) 2009-12-15
US20070279987A1 (en) 2007-12-06
US7382658B2 (en) 2008-06-03
EP2036094A2 (en) 2009-03-18
US7477546B2 (en) 2009-01-13
JP2009540545A (en) 2009-11-19

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