WO2008016516A3 - Methods for reducing surface charges during the manufacture of microelectromechanical systems devices - Google Patents

Methods for reducing surface charges during the manufacture of microelectromechanical systems devices Download PDF

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Publication number
WO2008016516A3
WO2008016516A3 PCT/US2007/016633 US2007016633W WO2008016516A3 WO 2008016516 A3 WO2008016516 A3 WO 2008016516A3 US 2007016633 W US2007016633 W US 2007016633W WO 2008016516 A3 WO2008016516 A3 WO 2008016516A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
manufacture
microelectromechanical systems
surface charges
reducing surface
Prior art date
Application number
PCT/US2007/016633
Other languages
French (fr)
Other versions
WO2008016516A2 (en
Inventor
Manish Kothari
Jeffrey B Sampsell
Original Assignee
Idc Llc
Manish Kothari
Jeffrey B Sampsell
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idc Llc, Manish Kothari, Jeffrey B Sampsell filed Critical Idc Llc
Priority to JP2009522786A priority Critical patent/JP2009545881A/en
Publication of WO2008016516A2 publication Critical patent/WO2008016516A2/en
Publication of WO2008016516A3 publication Critical patent/WO2008016516A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00579—Avoid charge built-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Abstract

Provided herein are methods for preventing the formation and accumulation of surface-associated charges, and deleterious effects associated therewith, during the manufacture of a MEMS device. In some embodiments, methods provided herein comprise etching a sacrificial material in the presence of an ionized gas, wherein the ionized gas neutralizes charged species produced during the etching process and allows for their removal along with other etching byproducts. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.
PCT/US2007/016633 2006-08-02 2007-07-23 Methods for reducing surface charges during the manufacture of microelectromechanical systems devices WO2008016516A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009522786A JP2009545881A (en) 2006-08-02 2007-07-23 Method for reducing surface charge during the manufacture of microelectromechanical system devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/462,026 US7763546B2 (en) 2006-08-02 2006-08-02 Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US11/462,026 2006-08-02

Publications (2)

Publication Number Publication Date
WO2008016516A2 WO2008016516A2 (en) 2008-02-07
WO2008016516A3 true WO2008016516A3 (en) 2008-05-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/016633 WO2008016516A2 (en) 2006-08-02 2007-07-23 Methods for reducing surface charges during the manufacture of microelectromechanical systems devices

Country Status (6)

Country Link
US (1) US7763546B2 (en)
JP (1) JP2009545881A (en)
KR (1) KR20090042824A (en)
CN (1) CN101511722A (en)
TW (1) TW200814186A (en)
WO (1) WO2008016516A2 (en)

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US20100309285A1 (en) * 2008-09-25 2010-12-09 Alcatel-Lucent Usa Inc. Technique For Maintaining Eye Contact In A Videoconference Using A Display Device
US8593503B2 (en) * 2008-09-25 2013-11-26 Alcatel Lucent Videoconferencing terminal and method of operation thereof to maintain eye contact
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