WO2008021988A3 - Gan based led with improved light extraction efficiency and method for making the same - Google Patents

Gan based led with improved light extraction efficiency and method for making the same Download PDF

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Publication number
WO2008021988A3
WO2008021988A3 PCT/US2007/075631 US2007075631W WO2008021988A3 WO 2008021988 A3 WO2008021988 A3 WO 2008021988A3 US 2007075631 W US2007075631 W US 2007075631W WO 2008021988 A3 WO2008021988 A3 WO 2008021988A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
making
same
light extraction
Prior art date
Application number
PCT/US2007/075631
Other languages
French (fr)
Other versions
WO2008021988A2 (en
Inventor
Steven D Lester
Original Assignee
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgelux Inc filed Critical Bridgelux Inc
Publication of WO2008021988A2 publication Critical patent/WO2008021988A2/en
Publication of WO2008021988A3 publication Critical patent/WO2008021988A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

A light-emitting device [40] and the method for making the same are disclosed. The device [40] includes a substrate [41], a light-emitting structure and a light scattering layer [45]. The light-emitting structure includes an active layer [43] sandwiched between a p-type GaN layer [42] and an n-type GaN layer [44], the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer [45] includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
PCT/US2007/075631 2006-08-14 2007-08-09 Gan based led with improved light extraction efficiency and method for making the same WO2008021988A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/504,435 US7674639B2 (en) 2006-08-14 2006-08-14 GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same
US11/504,435 2006-08-14

Publications (2)

Publication Number Publication Date
WO2008021988A2 WO2008021988A2 (en) 2008-02-21
WO2008021988A3 true WO2008021988A3 (en) 2008-07-17

Family

ID=39049818

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/075631 WO2008021988A2 (en) 2006-08-14 2007-08-09 Gan based led with improved light extraction efficiency and method for making the same

Country Status (3)

Country Link
US (2) US7674639B2 (en)
TW (1) TWI344222B (en)
WO (1) WO2008021988A2 (en)

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KR100661602B1 (en) * 2005-12-09 2006-12-26 삼성전기주식회사 Method for forming the vertically structured gan type light emitting diode device
JP2008182069A (en) * 2007-01-25 2008-08-07 Toshiba Corp Semiconductor light-emitting element
JP2010523006A (en) * 2007-03-29 2010-07-08 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Dual surface roughened N surface high brightness LED
US20080277678A1 (en) * 2007-05-08 2008-11-13 Huga Optotech Inc. Light emitting device and method for making the same
US20090015142A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display devices
US8179034B2 (en) * 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
US7713769B2 (en) * 2007-12-21 2010-05-11 Tekcore Co., Ltd. Method for fabricating light emitting diode structure having irregular serrations
EP2286148A1 (en) * 2008-05-12 2011-02-23 The Regents of the University of California Photoelectrochemical roughening of p-side-up gan-based light emitting diodes
US8105853B2 (en) 2008-06-27 2012-01-31 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
TW201001747A (en) * 2008-06-27 2010-01-01 Advanced Optoelectronic Tech Gallium nitride based light emitting device with roughed surface and fabricating method thereof
CN102171846A (en) * 2008-10-09 2011-08-31 加利福尼亚大学董事会 Photoelectrochemical etching for chip shaping of light emitting diodes
US20100110551A1 (en) * 2008-10-31 2010-05-06 3M Innovative Properties Company Light extraction film with high index backfill layer and passivation layer
US7957621B2 (en) * 2008-12-17 2011-06-07 3M Innovative Properties Company Light extraction film with nanoparticle coatings
US8502192B2 (en) * 2010-01-12 2013-08-06 Varian Semiconductor Equipment Associates, Inc. LED with uniform current spreading and method of fabrication
US8783915B2 (en) 2010-02-11 2014-07-22 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
CN101859855A (en) * 2010-05-14 2010-10-13 厦门市三安光电科技有限公司 Quaternary upright lighting diode with double roughened surfaces and preparation method thereof
CN102456784B (en) * 2010-10-29 2014-10-15 展晶科技(深圳)有限公司 LED (light emitting diode) and manufacturing method thereof
TWI414086B (en) * 2010-11-03 2013-11-01 Advanced Optoelectronic Tech Led and method for manufacturing the same
CN102637782A (en) * 2011-02-14 2012-08-15 同方光电科技有限公司 Method for manufacturing light-emitting diode with improved light extraction efficiency
CN102655195B (en) * 2011-03-03 2015-03-18 赛恩倍吉科技顾问（深圳）有限公司 Light-emitting diode and manufacturing method thereof
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
DE102011116232B4 (en) * 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for its production
KR101286211B1 (en) * 2012-02-16 2013-07-15 고려대학교 산학협력단 Method of fabricating light emitting device and light emitting device fabricated by using the same
KR20130120615A (en) * 2012-04-26 2013-11-05 엘지이노텍 주식회사 Light emitting device and light emitting device package
US9219204B1 (en) * 2013-03-11 2015-12-22 Rayvio Corporation Semiconductor device and a method of making a semiconductor device
CN105655456B (en) * 2016-04-08 2017-12-08 湘能华磊光电股份有限公司 A kind of bottom roughening growing method of extension increase LED light extraction efficiency

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US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US20050121679A1 (en) * 1997-01-09 2005-06-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US20050139840A1 (en) * 2003-12-25 2005-06-30 Mu-Jen Lai Gallium-nitride based light emitting diode structure and fabrication thereof
US20050224832A1 (en) * 2004-04-13 2005-10-13 Wu Jen-Chau High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof
US20060102921A1 (en) * 2004-11-12 2006-05-18 Liang-Wen Wu High-brightness gallium-nitride based light emitting diode structure
US20060154391A1 (en) * 2005-01-11 2006-07-13 Tran Chuong A Light emitting diodes (LEDs) with improved light extraction by roughening

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US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
DE19629920B4 (en) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode with a non-absorbing distributed Bragg reflector
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
EP1234344B1 (en) * 1999-12-03 2020-12-02 Cree, Inc. Enhanced light extraction in leds through the use of internal and external optical elements
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US6746889B1 (en) * 2001-03-27 2004-06-08 Emcore Corporation Optoelectronic device with improved light extraction
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
EP1697983B1 (en) * 2003-12-09 2012-06-13 The Regents of The University of California Highly efficient gallium nitride based light emitting diodes having surface roughening

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US20050121679A1 (en) * 1997-01-09 2005-06-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US20050139840A1 (en) * 2003-12-25 2005-06-30 Mu-Jen Lai Gallium-nitride based light emitting diode structure and fabrication thereof
US20050224832A1 (en) * 2004-04-13 2005-10-13 Wu Jen-Chau High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof
US20060102921A1 (en) * 2004-11-12 2006-05-18 Liang-Wen Wu High-brightness gallium-nitride based light emitting diode structure
US20060154391A1 (en) * 2005-01-11 2006-07-13 Tran Chuong A Light emitting diodes (LEDs) with improved light extraction by roughening

Also Published As

Publication number Publication date
WO2008021988A2 (en) 2008-02-21
US20080035936A1 (en) 2008-02-14
TWI344222B (en) 2011-06-21
US20100127276A1 (en) 2010-05-27
US7993943B2 (en) 2011-08-09
TW200810161A (en) 2008-02-16
US7674639B2 (en) 2010-03-09

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