WO2008027209A3 - Programmable resistance memory devices and systems using the same and methods of forming the same - Google Patents
Programmable resistance memory devices and systems using the same and methods of forming the same Download PDFInfo
- Publication number
- WO2008027209A3 WO2008027209A3 PCT/US2007/018242 US2007018242W WO2008027209A3 WO 2008027209 A3 WO2008027209 A3 WO 2008027209A3 US 2007018242 W US2007018242 W US 2007018242W WO 2008027209 A3 WO2008027209 A3 WO 2008027209A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- same
- electrode
- memory devices
- programmable resistance
- forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780031370XA CN101507009B (en) | 2006-08-25 | 2007-08-17 | Programmable resistance memory devices and systems using the same and methods of forming the same |
EP07836977.4A EP2059956B1 (en) | 2006-08-25 | 2007-08-17 | Programmable resistance memory devices and systems using the same and methods of forming the same |
JP2009525571A JP5435424B2 (en) | 2006-08-25 | 2007-08-17 | Programmable resistive memory device, system using the same, and method of forming the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/509,713 | 2006-08-25 | ||
US11/509,713 US7638357B2 (en) | 2006-08-25 | 2006-08-25 | Programmable resistance memory devices and systems using the same and methods of forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008027209A2 WO2008027209A2 (en) | 2008-03-06 |
WO2008027209A3 true WO2008027209A3 (en) | 2008-04-17 |
Family
ID=38886907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/018242 WO2008027209A2 (en) | 2006-08-25 | 2007-08-17 | Programmable resistance memory devices and systems using the same and methods of forming the same |
Country Status (6)
Country | Link |
---|---|
US (2) | US7638357B2 (en) |
EP (1) | EP2059956B1 (en) |
JP (1) | JP5435424B2 (en) |
KR (1) | KR101029674B1 (en) |
CN (1) | CN101507009B (en) |
WO (1) | WO2008027209A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI297225B (en) * | 2006-05-23 | 2008-05-21 | Ind Tech Res Inst | Phase change memory device and fabrications thereof |
US8198160B2 (en) | 2010-04-19 | 2012-06-12 | Jun Liu | Vertical transistor phase change memory |
US20120020140A1 (en) * | 2010-07-20 | 2012-01-26 | Industrial Technology Research Institute | Resistive memory cell and operation thereof, and resistive memory and operation and fabrication thereof |
US8729522B2 (en) * | 2012-10-23 | 2014-05-20 | Micron Technology, Inc. | Memory constructions comprising thin films of phase change material |
US8921818B2 (en) * | 2012-11-09 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure |
US9231205B2 (en) * | 2013-03-13 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low form voltage resistive random access memory (RRAM) |
US10003022B2 (en) | 2014-03-04 | 2018-06-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell structure with conductive etch-stop layer |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026686A1 (en) * | 2002-08-09 | 2004-02-12 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US20040208038A1 (en) * | 2002-10-31 | 2004-10-21 | Dai Nippon Prtg. Co., Ltd. | Phase change-type memory element and process for producing the same |
US20060110878A1 (en) * | 2004-11-22 | 2006-05-25 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
US20070152205A1 (en) * | 2005-12-29 | 2007-07-05 | Industrial Technology Research Institute | Semiconductor memory device, phase change memory device, and method of fabricating the same |
US20070176261A1 (en) * | 2006-01-30 | 2007-08-02 | Macronix International Co., Ltd. | Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods |
WO2007126690A2 (en) * | 2006-04-04 | 2007-11-08 | Micron Technology, Inc. | Phase change memory elements using self- aligned phase change material layers and methods of making and using same |
US20080014733A1 (en) * | 2006-07-14 | 2008-01-17 | Micron Technology, Inc. | Bottom electrode contacts for semiconductor devices and methods of forming same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
KR100437458B1 (en) * | 2002-05-07 | 2004-06-23 | 삼성전자주식회사 | Phase change memory cells and methods of fabricating the same |
US7018863B2 (en) * | 2002-08-22 | 2006-03-28 | Micron Technology, Inc. | Method of manufacture of a resistance variable memory cell |
US6815266B2 (en) * | 2002-12-30 | 2004-11-09 | Bae Systems Information And Electronic Systems Integration, Inc. | Method for manufacturing sidewall contacts for a chalcogenide memory device |
JP4489363B2 (en) * | 2003-03-03 | 2010-06-23 | シャープ株式会社 | Nonvolatile memory element, nonvolatile memory circuit, nonvolatile memory card, and recording / reproducing apparatus |
US7471552B2 (en) * | 2003-08-04 | 2008-12-30 | Ovonyx, Inc. | Analog phase change memory |
KR100639206B1 (en) * | 2004-06-30 | 2006-10-30 | 주식회사 하이닉스반도체 | Phase-change memory device and method for manufacturing the same |
US7214958B2 (en) * | 2005-02-10 | 2007-05-08 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
JP4817410B2 (en) * | 2005-09-12 | 2011-11-16 | エルピーダメモリ株式会社 | Phase change memory device and manufacturing method thereof |
US7417245B2 (en) * | 2005-11-02 | 2008-08-26 | Infineon Technologies Ag | Phase change memory having multilayer thermal insulation |
-
2006
- 2006-08-25 US US11/509,713 patent/US7638357B2/en active Active
-
2007
- 2007-08-17 CN CN200780031370XA patent/CN101507009B/en active Active
- 2007-08-17 KR KR1020097006083A patent/KR101029674B1/en active IP Right Grant
- 2007-08-17 JP JP2009525571A patent/JP5435424B2/en active Active
- 2007-08-17 EP EP07836977.4A patent/EP2059956B1/en active Active
- 2007-08-17 WO PCT/US2007/018242 patent/WO2008027209A2/en active Application Filing
-
2009
- 2009-11-25 US US12/626,126 patent/US7960813B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026686A1 (en) * | 2002-08-09 | 2004-02-12 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US20040208038A1 (en) * | 2002-10-31 | 2004-10-21 | Dai Nippon Prtg. Co., Ltd. | Phase change-type memory element and process for producing the same |
US20060110878A1 (en) * | 2004-11-22 | 2006-05-25 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
US20070152205A1 (en) * | 2005-12-29 | 2007-07-05 | Industrial Technology Research Institute | Semiconductor memory device, phase change memory device, and method of fabricating the same |
US20070176261A1 (en) * | 2006-01-30 | 2007-08-02 | Macronix International Co., Ltd. | Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods |
WO2007126690A2 (en) * | 2006-04-04 | 2007-11-08 | Micron Technology, Inc. | Phase change memory elements using self- aligned phase change material layers and methods of making and using same |
US20080014733A1 (en) * | 2006-07-14 | 2008-01-17 | Micron Technology, Inc. | Bottom electrode contacts for semiconductor devices and methods of forming same |
Also Published As
Publication number | Publication date |
---|---|
KR20090046953A (en) | 2009-05-11 |
JP2010502012A (en) | 2010-01-21 |
US7960813B2 (en) | 2011-06-14 |
US20100065806A1 (en) | 2010-03-18 |
WO2008027209A2 (en) | 2008-03-06 |
US20080073638A1 (en) | 2008-03-27 |
JP5435424B2 (en) | 2014-03-05 |
EP2059956A2 (en) | 2009-05-20 |
CN101507009A (en) | 2009-08-12 |
KR101029674B1 (en) | 2011-04-15 |
CN101507009B (en) | 2013-08-14 |
EP2059956B1 (en) | 2017-10-25 |
US7638357B2 (en) | 2009-12-29 |
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