WO2008033436A8 - Systems and methods for forming strontium-and/or barium-containing layers - Google Patents

Systems and methods for forming strontium-and/or barium-containing layers

Info

Publication number
WO2008033436A8
WO2008033436A8 PCT/US2007/019879 US2007019879W WO2008033436A8 WO 2008033436 A8 WO2008033436 A8 WO 2008033436A8 US 2007019879 W US2007019879 W US 2007019879W WO 2008033436 A8 WO2008033436 A8 WO 2008033436A8
Authority
WO
WIPO (PCT)
Prior art keywords
barium
systems
methods
containing layers
forming
Prior art date
Application number
PCT/US2007/019879
Other languages
French (fr)
Other versions
WO2008033436A1 (en
Inventor
Brian A Vaartstra
Stefan Uhlenbrock
Original Assignee
Micron Technology Inc
Brian A Vaartstra
Stefan Uhlenbrock
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Brian A Vaartstra, Stefan Uhlenbrock filed Critical Micron Technology Inc
Publication of WO2008033436A1 publication Critical patent/WO2008033436A1/en
Publication of WO2008033436A8 publication Critical patent/WO2008033436A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3

Abstract

A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
PCT/US2007/019879 2006-09-14 2007-09-12 Systems and methods for forming strontium-and/or barium-containing layers WO2008033436A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/521,186 2006-09-14
US11/521,186 US8617312B2 (en) 2002-08-28 2006-09-14 Systems and methods for forming layers that contain niobium and/or tantalum

Publications (2)

Publication Number Publication Date
WO2008033436A1 WO2008033436A1 (en) 2008-03-20
WO2008033436A8 true WO2008033436A8 (en) 2008-06-05

Family

ID=38941878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/019879 WO2008033436A1 (en) 2006-09-14 2007-09-12 Systems and methods for forming strontium-and/or barium-containing layers

Country Status (2)

Country Link
US (1) US8617312B2 (en)
WO (1) WO2008033436A1 (en)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273951B1 (en) 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6958302B2 (en) * 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) * 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US7135369B2 (en) * 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US7601649B2 (en) * 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US7482037B2 (en) * 2004-08-20 2009-01-27 Micron Technology, Inc. Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) * 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7235501B2 (en) * 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7560395B2 (en) * 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7390756B2 (en) * 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7662729B2 (en) * 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) * 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7510983B2 (en) * 2005-06-14 2009-03-31 Micron Technology, Inc. Iridium/zirconium oxide structure
US7393736B2 (en) * 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
US20070049023A1 (en) * 2005-08-29 2007-03-01 Micron Technology, Inc. Zirconium-doped gadolinium oxide films
US7410910B2 (en) * 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US7615438B2 (en) 2005-12-08 2009-11-10 Micron Technology, Inc. Lanthanide yttrium aluminum oxide dielectric films
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7582161B2 (en) 2006-04-07 2009-09-01 Micron Technology, Inc. Atomic layer deposited titanium-doped indium oxide films
US7727908B2 (en) 2006-08-03 2010-06-01 Micron Technology, Inc. Deposition of ZrA1ON films
US7582549B2 (en) * 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7544604B2 (en) * 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US20080057659A1 (en) * 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7776765B2 (en) * 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7563730B2 (en) * 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
EP1903157A3 (en) * 2006-09-19 2008-05-14 Integrated Dynamics Engineering GmbH Ambient noise shielding device
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
US8907059B2 (en) * 2008-11-14 2014-12-09 Bio-Rad Laboratories, Inc. Phosphopeptide enrichment of compositions by fractionation on ceramic hydroxyapatite
JP7097700B2 (en) * 2015-05-04 2022-07-08 ビーエーエスエフ コーポレーション Electrochemical hydrogen storage electrodes and electrochemical batteries
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US9540729B1 (en) 2015-08-25 2017-01-10 Asm Ip Holding B.V. Deposition of titanium nanolaminates for use in integrated circuit fabrication

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4895709A (en) * 1985-04-26 1990-01-23 Sri International Method of preparing metal carbides, nitrides, and the like
EP0320169B1 (en) 1987-11-30 1994-01-05 The Dow Chemical Company Catalysts prepared from tetrakis (dialkylamide and diarylamide) derivatives of titanium and polymerization of olefins therewith
US5003092A (en) * 1989-06-02 1991-03-26 The Research Foundation Of State University Of Ny Use of R2 MR' to prepare semiconductor and ceramic precursors
US4975299A (en) * 1989-11-02 1990-12-04 Eastman Kodak Company Vapor deposition process for depositing an organo-metallic compound layer on a substrate
US5139825A (en) * 1989-11-30 1992-08-18 President And Fellows Of Harvard College Process for chemical vapor deposition of transition metal nitrides
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
US5209979A (en) * 1990-01-17 1993-05-11 Ethyl Corporation Silicon carbide coated article with ceramic topcoat
JPH03238747A (en) 1990-02-16 1991-10-24 Matsushita Electric Ind Co Ltd Metal vapor discharge lamp and manufacture thereof
US5362328A (en) * 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5124278A (en) * 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5514822A (en) * 1991-12-13 1996-05-07 Symetrix Corporation Precursors and processes for making metal oxides
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5559260A (en) * 1991-12-13 1996-09-24 Symetrix Corporation Precursors and processes for making metal oxides
JP3156326B2 (en) * 1992-01-07 2001-04-16 富士通株式会社 Semiconductor growth apparatus and semiconductor growth method using the same
US5256244A (en) * 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
US5326892A (en) * 1992-11-24 1994-07-05 Advanced Technology Materials, Inc. Bimetallic alkoxide reagents and method of making the same
US5409735A (en) * 1992-11-30 1995-04-25 Wayne State University Chemical vapor deposition of metal pnictogenide films using single source precursors
US5344792A (en) * 1993-03-04 1994-09-06 Micron Technology, Inc. Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2
US5399379A (en) * 1993-04-14 1995-03-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
GB9317408D0 (en) * 1993-08-20 1993-10-06 Ultra Silicon Techn Uk Ltd Ac thin film electroluminescent device
US5413813A (en) * 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5389401A (en) * 1994-02-23 1995-02-14 Gordon; Roy G. Chemical vapor deposition of metal oxides
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
US5478610A (en) * 1994-09-02 1995-12-26 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
US5679815A (en) * 1994-09-16 1997-10-21 Advanced Technology Materials, Inc. Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
US6444264B2 (en) * 1995-03-31 2002-09-03 Advanced Technology Materials, Inc. Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US5919522A (en) * 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
KR100199346B1 (en) * 1995-04-04 1999-06-15 김영환 Electrode of capacitor fabrication method
US5625587A (en) * 1995-07-12 1997-04-29 Virginia Polytechnic Institute And State University Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices
US5817175A (en) * 1995-07-25 1998-10-06 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds
US6004392A (en) * 1995-09-11 1999-12-21 Sony Corporation Ferroelectric capacitor and manufacturing the same using bismuth layered oxides
US5908947A (en) * 1996-02-09 1999-06-01 Micron Technology, Inc. Difunctional amino precursors for the deposition of films comprising metals
US5744198A (en) * 1996-02-27 1998-04-28 The University Of New Mexico Method of depositing metal sulfide films from metal thiocarboxylate complexes with multidentate ligands
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5924012A (en) * 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US6030454A (en) * 1997-03-28 2000-02-29 Advanced Technology Materials, Inc. Composition and method for forming thin film ferrite layers on a substrate
US5948322A (en) * 1997-04-10 1999-09-07 Advanced Technology Materials, Inc. Source reagents for MOCVD formation of non-linear optically active metal borate films and optically active metal borate films formed therefrom
US5980983A (en) * 1997-04-17 1999-11-09 The President And Fellows Of Harvard University Liquid precursors for formation of metal oxides
US7005303B2 (en) * 1997-11-20 2006-02-28 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
US6159855A (en) * 1998-04-28 2000-12-12 Micron Technology, Inc. Organometallic compound mixtures in chemical vapor deposition
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6090963A (en) * 1998-11-10 2000-07-18 Sharp Laboratories Of America, Inc. Alkene ligand precursor and synthesis method
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6387764B1 (en) * 1999-04-02 2002-05-14 Silicon Valley Group, Thermal Systems Llc Trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth
US6273951B1 (en) * 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
FI118804B (en) * 1999-12-03 2008-03-31 Asm Int Process for making oxide films
US6335049B1 (en) * 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6271094B1 (en) * 2000-02-14 2001-08-07 International Business Machines Corporation Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance
US6342445B1 (en) * 2000-05-15 2002-01-29 Micron Technology, Inc. Method for fabricating an SrRuO3 film
KR100385947B1 (en) * 2000-12-06 2003-06-02 삼성전자주식회사 Method of forming thin film by atomic layer deposition
US20020086111A1 (en) * 2001-01-03 2002-07-04 Byun Jeong Soo Method of forming refractory metal nitride layers using chemisorption techniques
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6730164B2 (en) * 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7115528B2 (en) * 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
EP1920143B1 (en) 2005-08-18 2010-10-13 Renault Trucks Control method for the intake and exhaust valves of an engine and internal combustion engine comprising such valves

Also Published As

Publication number Publication date
US20070006798A1 (en) 2007-01-11
US8617312B2 (en) 2013-12-31
US20080210157A9 (en) 2008-09-04
WO2008033436A1 (en) 2008-03-20

Similar Documents

Publication Publication Date Title
WO2008033436A8 (en) Systems and methods for forming strontium-and/or barium-containing layers
WO2013003676A3 (en) Systems and methods for controlling etch selectivity of various materials
WO2007048963A3 (en) Substrate processing method
WO2010015302A3 (en) Relaxation and transfer of strained layers
WO2011047210A3 (en) Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
WO2006069774A3 (en) Vacuum deposition system
WO2012016977A3 (en) A diamond optical element
WO2006024808A3 (en) Method for transferring a functional organic molecule onto a transparent substrate
EP1992007A4 (en) Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
WO2010123877A3 (en) Cvd apparatus for improved film thickness non-uniformity and particle performance
WO2004020689A3 (en) Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
WO2010101756A3 (en) Web substrate deposition system
WO2009103925A3 (en) Growth of carbon nanotubes on carbon or metal substrates
WO2008016650A3 (en) Methods of forming carbon-containing silicon epitaxial layers
GB0718024D0 (en) Method of forming organic compound layer process for producing organic e deviceand organic el device
WO2008136504A1 (en) Method for manufacturing group iii nitride semiconductor light-emitting device
WO2012057517A3 (en) Compound semiconductor device and method for manufacturing a compound semiconductor
TW200723354A (en) Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof
WO2012093807A3 (en) Method and device for fingerprint resistant coating
WO2017212077A3 (en) Method for producing a substrate having a boron-doped surface
WO2011006035A3 (en) Bis-ketoiminate copper precursors for deposition of copper-containing films
WO2017062355A3 (en) Methods for depositing dielectric barrier layers and aluminum containing etch stop layers
WO2012061232A3 (en) Method of depositing dielectric films using microwave plasma
TW200634901A (en) A method for fabricating a low dielectric layer
MX364356B (en) Hipims layering.

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07838136

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07838136

Country of ref document: EP

Kind code of ref document: A1