WO2008038574A1 - Wiring board for surface mounting type light emitting element and light emitting device - Google Patents

Wiring board for surface mounting type light emitting element and light emitting device Download PDF

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Publication number
WO2008038574A1
WO2008038574A1 PCT/JP2007/068291 JP2007068291W WO2008038574A1 WO 2008038574 A1 WO2008038574 A1 WO 2008038574A1 JP 2007068291 W JP2007068291 W JP 2007068291W WO 2008038574 A1 WO2008038574 A1 WO 2008038574A1
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WO
WIPO (PCT)
Prior art keywords
emitting element
light emitting
wiring board
metal body
light
Prior art date
Application number
PCT/JP2007/068291
Other languages
French (fr)
Japanese (ja)
Inventor
Minako Izumi
Tomohide Hasegawa
Yasuhiro Sasaki
Original Assignee
Kyocera Corporation
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Filing date
Publication date
Application filed by Kyocera Corporation filed Critical Kyocera Corporation
Publication of WO2008038574A1 publication Critical patent/WO2008038574A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the present invention relates to a surface-mounting light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.
  • a light emitting device using an LED element has been used for various applications because it has a very high luminous efficiency and has a small amount of heat generated by light emission compared to an incandescent bulb.
  • the amount of emitted light is smaller than that of incandescent bulbs and fluorescent lamps, it is used as a light source for display that is not used for lighting, and the energization amount is very small at about 30 mA (for example, (See JP 2002-134790).
  • a heat sink is provided on the upper side of the semiconductor element (see, for example, Japanese Patent Laid-Open No. 8-222668), or a heat sink is provided on the lower side of the semiconductor element (for example, Japanese Patent Laid-Open No. 7-254668).
  • Japanese Patent Laid-Open No. 8-222668 Japanese Patent Laid-Open No. 8-222668
  • a heat sink is provided on the lower side of the semiconductor element (for example, Japanese Patent Laid-Open No. 7-254668).
  • the LED element is very small, less than lmm square, so the wiring board for the light-emitting element on which the element is mounted is also small, and the high-brightness LED device is used in various devices such as mobile phones and backlights for liquid crystal displays.
  • a mounting method convenient surface mounting is used.
  • a heat radiating body is provided so as to pass through the wiring board for the light emitting element exclusively (for example, refer to Japanese Patent Laid-Open No. 2003-318448).
  • the method disclosed in Japanese Patent Application Laid-Open No. 2006-93565 has a problem that the degree of freedom in design is significantly reduced although the heat dissipation can be improved by providing a through metal body. That is, when the through metal body is not used as an electric circuit, a terminal cannot be provided at a portion where the through metal body is exposed. Therefore, it is necessary to prepare the terminal by avoiding the through metal body. There is no particular problem because the terminals on the light-emitting element side are small enough to function properly.However, on the side where the connection terminals to the external board are provided, it is necessary to dissipate heat from the connection parts of both, and the external electrode terminals There is a need to increase the area. For this reason, when a wiring board for a light emitting element having a through metal body and a large external electrode terminal is manufactured, there is a problem that the wiring board for the light emitting element is necessarily enlarged.
  • An object of the present invention is to provide a surface-mount type light-emitting element wiring board that has a high degree of design freedom and can be miniaturized and is excellent in heat dissipation, and a light-emitting device using the same.
  • a wiring board for a surface-mounted light-emitting element according to the present invention includes an insulating base made of ceramics having a bottomed hole having an opening on an upper surface, and a mounting portion for mounting the light-emitting element on an upper surface, and is disposed in the bottomed hole.
  • the external connection terminals are arranged so that at least a part overlaps the top and bottom.
  • the connection electrode and the external connection terminal are electrically connected by an external wiring formed on the side wall of the insulating base, which may be electrically connected by an internal wiring formed inside the insulating base.
  • the metal body since the metal body is disposed in the bottomed hole formed in the insulating base, the metal body serves as a heat sink and the heat generated by the light emitting element. Can be released to the external substrate through the metal body, the insulating base and the external connection terminal, and the light emitting element can be prevented from being heated excessively. For this reason, it is possible to prevent a decrease in luminance or to further increase the luminance.
  • the insulating base is interposed between the metal body and the external connection terminal, the metal body is not exposed on the lower surface of the surface mount type light emitting element wiring board, and the external connection terminal can be freely designed. Therefore, it contributes to the miniaturization of the surface mounting type light emitting element wiring board, and the wiring design considering the connection reliability and the mounting reliability can also be performed.
  • the metal body and the external connection terminal are arranged so that at least part of the metal body and the external connection terminal are vertically stacked with an insulating base interposed in the thickness direction of the surface mounting type light emitting element wiring board, whereby the heat generated by the light emitting element A path from the body to the outside of the system can be formed short, and an excessive temperature rise of the light emitting element can be suppressed.
  • the wiring board for a surface-mounted light-emitting element includes an insulating base having a mounting portion on which the light-emitting element is mounted on the upper surface, a metal body embedded in the insulating base immediately below the mounting portion, A connection electrode formed on the upper surface of the insulating base; and an external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode.
  • the metal body and the external connection terminal It is preferable that at least a part of the layers overlap each other. In this case, it is desirable that an independent metal film is formed on the mounting portion, or that the connection electrode is extended.
  • the surface mount type light emitting device wiring board of the present invention can freely arrange the connection electrodes and mounting parts when the metal body is embedded in the insulating base and the metal body is not exposed on the top surface of the insulating base. Therefore, it can contribute to miniaturization of the wiring board for the surface mount type light emitting element.
  • connection electrodes formed on the upper surface of the insulating base have a pair of connection electrodes to which a potential difference is applied.
  • a flip-chip type (face-down structure) light-emitting element is mounted, and the electrode terminals of the light-emitting elements are respectively connected. If the metal body is exposed on the upper surface of the insulating substrate when connected to the connection electrode, the pair of connection electrodes to which this potential difference is applied are electrically connected. Will end up.
  • the metal body is not exposed on the upper surface of the insulating substrate, even if a flip chip type (face-down structure) light-emitting element is mounted, the metal body is not electrically connected to the pair of connection electrodes. The body can be placed and a sufficient heat dissipation effect can be obtained.
  • the light emitting element When an insulating base is interposed between the metal body and the connection electrode, and an independent metal film is formed on the mounting portion or the connection electrode extends, the light emitting element is mounted.
  • the light emitting element and the mounting portion can be joined using a material having high thermal conductivity.
  • a metal film plated with Au is formed on the mounting portion, a high heat dissipation effect can be obtained by mounting the light emitting element by AuSn bonding.
  • an independent metal film is formed on the mounting portion or the connection electrode is extended, the light is reflected by the mounting portion, so that the light extraction efficiency can be improved. For example, when Ag plating with high reflectivity is applied to the surface, the light extraction efficiency can be improved.
  • the wiring board for a surface-mounted light-emitting element according to the present invention has a thermal conductivity of the ceramic of 15 W / (m′K) or more, and the insulating substrate between the metal body and the external connection terminal. Desirably, the thickness is 50 to 200 111, and 30% or more of the lower surface of the metal body is disposed so as to overlap with the external connection terminals.
  • the surface mount type light emitting device wiring board of the present invention has a thermal conductivity of 15 W / (m * K) or more of the ceramic forming the insulating base, and the insulating substrate between the metal body and the external connection terminal.
  • the thickness of the body is 50 to 200 111, and 30% or more of the lower surface of the metal body is arranged so as to overlap with the external connection terminals. A heat dissipation effect can be realized.
  • the light-emitting device of the present invention is obtained by mounting a light-emitting element on the mounting portion of the wiring board for a surface-mounted light-emitting element described above.
  • the heat generated from the light emitting element can be quickly generated using the metal body and the external connection terminal. Since it can be discharged outside the device, it can suppress the decrease in brightness due to heat generation, and the design force of the external connection terminal is high, so it can be downsized. it can.
  • FIG. 1A is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to one embodiment of the present invention
  • FIG. 1B is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to another embodiment of the present invention. is there.
  • FIG. 2A is a cross-sectional view of a light-emitting device according to an embodiment of the present invention
  • FIG. 2B is a cross-sectional view of a light-emitting device according to another embodiment of the present invention.
  • FIG. 3A is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to still another embodiment of the present invention
  • FIG. 3B is a wiring board for a surface-mounted light-emitting element according to still another embodiment of the present invention. It is sectional drawing.
  • FIG. 4A is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to still another embodiment of the present invention
  • FIG. 4B is a flip-chip light-emitting element on the wiring board for the surface-mounted light-emitting element of the present invention. It is sectional drawing of the light-emitting device of further another embodiment of this invention which mounted
  • FIG. 5A is a cross-sectional view of a light-emitting device according to still another embodiment of the present invention
  • FIG. 5B is a cross-sectional view of a light-emitting device according to still another embodiment of the present invention.
  • FIGS. 6A and 6C are plan views of the surface mount type light emitting device wiring board of the comparative example as viewed from below. It is.
  • a wiring board 11 for a surface-mounted light-emitting element includes a flat insulating base 1 made of ceramics and a bottomed hole 3 formed in the insulating base 1. It has. A metal body 5 is disposed in the bottomed hole 3, and a mounting portion 7 for mounting a light emitting element is formed on the upper side of the metal body 5.
  • connection electrode 9 that is electrically connected to the electrode of the light emitting element mounted on the mounting portion 7 is disposed on the upper surface la of the insulating substrate 1, and the surface mounting of the present invention is performed on the lower surface lb of the insulating substrate 1.
  • An external connection terminal 13 for electrically connecting the wiring board 11 for type light emitting element to an external wiring board or the like is disposed.
  • an internal wiring 15 that electrically connects the connection electrode 9 and the external connection terminal 13 is disposed so as to penetrate the insulating substrate 1 inside the insulating substrate 1.
  • the metal body 5 and the external connection terminal 13 are arranged so as to overlap at least partially in the vertical direction.
  • the metal body 5 when the metal body 5 is embedded in the bottomed hole 3 under the mounting portion 7 of the insulating base 1, heat generated from the light emitting element mounted on the surface mount type light emitting element wiring substrate 11 of the present invention is generated.
  • the metal body 5 By promptly transmitting the light to the metal body 5, it is possible to prevent the temperature of the light emitting element from excessively rising, to suppress a decrease in luminance of the light emitting element, and to achieve higher luminance.
  • the metal body 5 since the metal body 5 is arranged in the bottomed hole 3, the metal body 5 is not exposed to the lower surface lb of the surface mount type light emitting device wiring board 11, so that the wiring design of the external connection terminal 13 can be reduced.
  • the degree of freedom is high, and the surface mount type light emitting element wiring board 11 can be miniaturized.
  • the metal body 5 and the external connection terminal 13 are arranged so as to overlap each other in the thickness direction of the surface mount type light emitting element wiring board 11, in other words, a part of the external connection terminal 13 is seen from above. Since it overlaps with the metal body 5, the heat generated from the light emitting element and transferred to the metal body 5 with high thermal conductivity is released outside the system through the external connection terminal 13 with high thermal conductivity. It is possible to prevent excessive heat generation of the light emitting element.
  • the ratio of the external connection terminals 13 to the lower surface lb of the insulating substrate 1 is 45% or more in terms of area ratio.
  • the external connection terminal 13 occupies a large area, so that the surface mount type light emitting device wiring board 11 can be realized with high heat dissipation and at the same time connection reliability and mounting reliability. It is also possible to perform wiring design considering the above.
  • the area ratio of the external connection terminals 13 is preferably 60% or more.
  • the wiring substrate for the surface mount light emitting element is further increased.
  • the heat dissipation effect of the plate 11 can be enhanced.
  • the thickness of the insulating base 1 between the metal body 5 and the external connection terminal 13 is 50 to 200 m! /.
  • the thickness of the insulating substrate 1 between the metal body 5 and the external connection terminal 13 is preferably ⁇ , ⁇ , more preferably 80 to 100111.
  • the insulating substrate 1 it is desirable to use a material having a thermal conductivity of 15 W / (m′K) or more. As a result, the power S for further enhancing the heat dissipation of the surface mount type light emitting element wiring substrate 11 can be obtained.
  • the surface mount type light emitting element wiring board 11 of the present invention has a comprehensively satisfying these requirements, that is, the thermal conductivity of the ceramic forming the insulating substrate 1 is 15 W / (m ′ K) Above, the thickness of the insulating base 1 between the metal body 5 and the external connection terminal 13 is 50 to 200 m, and 30% or more of the lower surface of the metal body 5 is arranged so as to overlap the external connection terminal 13 vertically. In particular, it exhibits an excellent heat dissipation effect.
  • Inexpensive raw materials can be used, and an inexpensive surface mount type light emitting element wiring substrate 11 can be obtained.
  • the Al 2 O-type sintered body having Al 2 O as the main crystal phase is, for example, A1 by X-ray diffraction.
  • the O peak is detected as the main peak.
  • such a sintered body has, for example, an A 1 O powder having an average particle size of 1.0 to 2.0 m and a purity of 99% or more, an average particle size of 1.0 to 2.0 am (Mn O, Group power of SiO, MgO, CaO, SrO,
  • the “average particle size” means the particle size d50 at which the cumulative curve is 50% when the cumulative curve is obtained with the total volume of the powder group as 100%.
  • X-100 manufactured by Nikkiso Co., Ltd.
  • Al O is the main component.
  • the amount of composition other than Al 2 O, such as sintering aids is desirably 15% by mass or less, and more desirably 10% by mass or less.
  • the amount of composition other than Al 2 O, such as sintering aids is desirably 15% by mass or less, and more desirably 10% by mass or less.
  • most of the obtained insulating substrate 1 is formed of Al 2 O crystals.
  • These sintering aids are preferably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature.
  • a sintered body mainly composed of glass ceramics, magnesium oxide, zirconium oxide, aluminum nitride, silicon nitride, mullite, cordierite, or the like may be used.
  • the thermal conductivity of the metal body 5 is particularly preferably 150 W / (m′K) or more.
  • the effect of the metal body 5 as a heat sink can be further enhanced, and high heat dissipation can be obtained.
  • Cu, Cu—W, Ag, Al, W, Mo, or the like can be used.
  • the metal body 5 may have a rectangular parallelepiped shape, a cylindrical shape, or a multistage shape.
  • the volume of the metal body 5 can be maximized and high heat dissipation can be realized.
  • a cylindrical shape it is possible to prevent stress concentration and provide high reliability.
  • a multi-stage shape since the contact area with the insulating base 1 is large, the bonding reliability with the insulating base 1 can be increased.
  • the surface mount type light emitting element wiring board 11A is provided with a light emitting element for guiding light from the light emitting element mounted on the mounting portion 7 or a light emitting element.
  • a frame 17 may be provided on the upper surface la of the insulating substrate 1.
  • the frame 17 can protect the light emitting element and can easily arrange a phosphor or the like around the light emitting element.
  • the light emitted from the light emitting element can be reflected by the frame body 17 and guided in a predetermined direction.
  • the inner wall surface 17a of the frame body 17 may be perpendicular to the upper surface la of the insulating substrate 1 or may be inclined. When the inner wall surface 17a of the frame 17 is inclined outward, the light extraction efficiency is further increased.
  • the frame 17 may be ceramic or metal, and when the same material as the insulating base 1 is used, High heat and reliability with the insulating substrate 1 can be obtained, and higher heat dissipation and light extraction efficiency can be obtained by using ceramics or metal of high heat transfer material or high reflectivity material.
  • a method for manufacturing the surface mount type light emitting element wiring boards 11 and 11A in the present invention will be specifically described. First, as described below, a ceramic green sheet, a metal sheet, and a conductor paste are prepared.
  • the ceramic green sheet is formed on a sheet from a ceramic slurry prepared by mixing ceramic powder, a resin, and a solvent at a predetermined ratio, by a conventionally known doctor blade method or the like.
  • the metal sheet is also formed into a sheet shape by a doctor blade method or the like from a metal slurry formed from a metal powder, a resin and a solvent.
  • the metal slurry may contain ceramic powder as necessary. Ceramic powders and metal powders used for ceramic green sheets and metal sheets preferably have an average particle size of 0.01 to about 10 to 10 m, especially powders in the range of 1 to 5 m. Is excellent in handling and sinterability.
  • a conductor paste containing at least one of Cu, Ag, W, and Mo as a main component is prepared.
  • the conductive paste is produced by mixing metal powder, resin and solvent in a predetermined ratio and removing the solvent by heating under reduced pressure. Ceramic powder may be included as necessary.
  • the average particle size of the metal powder and ceramic powder used in the conductive paste is 0.01 to 10 m, and the powder is preferably used in the range of 1 to 5 m. Excellent sinterability!
  • a via hole is formed in the ceramic green sheet with a micro drill or laser, and the via hole is filled with a conductor paste by a method such as printing, and the conductor paste is printed on the surface of the ceramic green sheet to form a wiring. Then, after forming a through hole at a predetermined location of the ceramic green sheet, a metal sheet is laminated on the ceramic green sheet in which the through hole is formed, and a through hole forming portion in the ceramic green sheet is pressed from the metal sheet side, Part of the metal sheet is embedded in the through hole, and the ceramic liner sheet and the metal sheet are integrated. At this time, the ceramic green sheet and metal sheet It is desirable that the thickness is almost the same thickness.
  • connection electrode 9, the external connection terminal 13, the internal wiring 15, and the metal 5 were formed on the surface and inside.
  • the surface mount type light emitting element wiring substrate 11 can be manufactured.
  • connection body 9 and the external connection terminal 13 may be formed on the surface of the insulating substrate 1 by a thin film method, or may be formed by transferring a metal foil onto the surface of the molded body.
  • a pure metal block may be bonded to the baked insulating substrate 1 using solder, silver solder or active solder.
  • a frame 17 as shown in FIG. 1B can be formed by punching a ceramic green sheet, laminating it on the ceramic green sheet of the insulating substrate 1, and performing simultaneous firing. It is also possible to form a metal such as A1 or Fe—Ni—Co alloy in the shape of a frame by cutting or etching and adhere it to the sintered insulating substrate 1 using a brazing agent or resin. When bonding using a brazing agent, it is necessary to form a metal layer (not shown) using a metal paste on the bonding surface between the insulating substrate 1 and the frame 17.
  • a plating layer made of Ni, Au, A1, Ag, or the like is formed on the surface of the connection electrode 9, the external connection terminal 13, the metal body 5, and the frame body 17 to increase reflectivity and emit light.
  • the extraction efficiency of light generated from the element may be improved.
  • the light emitting element 21 is provided with a connection layer 23 made of metal or resin on the mounting portion 7 of the surface mount type light emitting element wiring board 11 or 11A of the present invention described above.
  • the terminal (not shown) of the light emitting element 21 and the connection electrode 9 are connected by a bonding wire 25, and the light emitting element 21, the connection layer 23, and the bonding wire 25 are made of a molding material or the like.
  • a translucent sealing resin 27 or the like By covering with a translucent sealing resin 27 or the like, a light emitting device 29 according to an embodiment of the present invention and a light emitting device 29A according to another embodiment of the present invention are obtained.
  • the light emitting element 21 is covered with the sealing resin 27, the light emitting element 21 may be sealed using a lid (not shown) without using the sealing resin 27. And a lid may be used in combination. As the lid used in this case, it is desirable to use a light-transmitting material such as glass.
  • the wavelength of the light emitted from the light emitting element 21 is converted into this sealing resin 27. You can also add a phosphor (not shown).
  • connection layer 23 it is desirable to use a metal such as solder, indium, or AuSn alloy as the connection layer 23.
  • the heat dissipation is further improved by providing a heat sink.
  • a heat sink For example, it is not excluded to provide a cooling device.
  • the light-emitting device 29, 29A of the present invention in which the light-emitting element 21 is mounted on the surface mount type light-emitting element wiring board 11, 11A of the present invention described above, light is emitted through the metal body 5 and the external connection terminal 13. Since the heat generated from the element 21 can be quickly released outside the device, it is possible to suppress a decrease in luminance due to the generated heat, and the external connection terminal 13 has a high degree of freedom in design, and thus can be downsized. .
  • connection electrode 9 and the external connection terminal 13 in the surface mount type light emitting element wiring board of the present invention is not limited to the connection by the internal wiring 15, but is still another embodiment of the present invention shown in FIG. 3A.
  • the connection by the external wiring 16 may be used like the surface mount type light emitting element wiring board 11B of the embodiment.
  • the surface mount type light emitting element wiring board 11C includes an upper surface la of the insulating substrate 1 so as to cover the lower surface of the metal body 5 from below.
  • a cover land 31 may be provided in parallel.
  • the metal body 5 may be embedded in the insulating base 1 immediately below the mounting portion 7 so that the insulating base 1 is interposed between the metal body 5 and the connection electrode 9.
  • the mounting portion 7 is within the cross section of the metal body 5 when viewed from above, in other words, when viewed from above the metal body 5. It is preferable that the outer periphery of the cross section is located outside the mounting portion 7.
  • the mounting portion 7 means a region where the light emitting element 21 on the upper surface la of the insulating substrate 1 is mounted, in other words, an upper surface region of the insulating substrate 1 overlapping the light emitting element 21 when viewed from above.
  • a flip chip type (face-down structure) light emitting element is mounted by embedding a metal body 5 inside the insulating substrate 1. Even in such a case, the metal body can be disposed without electrically connecting the pair of connection electrodes, so that a sufficient heat radiation effect can be obtained. That is, as the connection electrodes formed on the upper surface of the insulating substrate, there are a pair of connection electrodes to which a potential difference is applied, and a flip-chip (face-down structure) light-emitting element is mounted, and the electrode terminals of the light-emitting elements are respectively connected.
  • the metal body If the metal body is exposed on the upper surface of the insulating substrate when connected to the connection electrode, the pair of connection electrodes to which this potential difference is applied are electrically connected. On the other hand, if the metal body is not exposed on the upper surface of the insulating substrate, the metal body can be connected without electrically connecting the pair of connection electrodes even if a flip-chip (face-down structure) light-emitting element is mounted. It can arrange
  • the thickness of the insulating substrate 1 between the metal body 5 and the connection electrode 9 (the distance from the upper surface of the metal body 5 to the upper surface la of the insulating substrate 1) is between the metal body 5 and the external connection terminal 13. Similarly to the thickness of the insulating substrate 1, it is desirable that the thickness is 50 to 200 ⁇ m, particularly 60 to 150 ⁇ m, more preferably 80 to 100 m from the viewpoint of insulation and heat dissipation.
  • the light emitting element 21 and the mounting portion 7 can be joined using a material having high thermal conductivity.
  • connection electrode 9 is extended to the mounting portion 7 as in the light emitting device 29C according to still another embodiment of the present invention shown in FIG. 5A, of the pair of connection electrodes 9 shown in FIG. 2A.
  • One of them extends in a direction parallel to the upper surface la of the insulating substrate 1, meaning that the connection electrode 9 is formed in the entire region of the mounting portion 7.
  • the fact that the independent metal film 8 is formed on the mounting portion 7 means that it is electrically connected to the connection electrode 9 as in the light emitting device 29D of still another embodiment of the present invention shown in FIG. 5B. This means that no metal film 8 was formed in the entire area of the mounting part 7. Taste.
  • the mounting part 7 has the metal film 8 plated with Au
  • a high heat dissipation effect can be obtained by mounting the light emitting element 21 by bonding using AuSn alloy.
  • the force that the independent metal film 8 is formed on the mounting portion 7 or the extension of the connection electrode causes the light to be reflected by the mounting portion 7, leading to an improvement in light extraction efficiency.
  • the light extraction efficiency can be improved when Ag plating with high reflectivity is applied to the surface.
  • the purity is 99% or more, the average particle size is 1.5 111 8 1 O powder, the purity is 99% or more, the average particle size is 1.0 111, 310 powder ,
  • a powder 11 with an average particle size of 2.0 111 is used, and 30% by mass of Cu powder and 70% by mass of W powder are mixed together to form an organic resin (binder) for molding.
  • an organic resin (binder) for molding After adding an talyl-based binder and toluene as a solvent and preparing a slurry to be a metal sheet in the same manner as the ceramic green sheet, a metal sheet having substantially the same thickness as the ceramic green sheet was prepared by the doctor blade method.
  • the average particle size of 2 111 of Cu powder 30 mass 0/0, W powder having an average grain size of 2 m, an acrylic-by Sunda and acetone were mixed as a solvent, the conductor pair one by removing the solvent by vacuum heating or the like A strike was prepared.
  • the ceramic green sheet as the insulating base is punched to form a via hole having a diameter of 100 m.
  • the via hole is filled with a conductive paste by a screen printing method, and a wiring pattern is formed. Was printed and applied.
  • a through hole is formed at a predetermined position of the ceramic green sheet, and a part of the metal sheet is embedded in the through hole by pressing a through hole forming portion of the ceramic green sheet from the metal sheet.
  • the composite of the ceramic green sheet and metal sheet thus produced, and the ceramic green sheet were combined, aligned, and laminated and pressed to produce a laminate.
  • a substrate was produced.
  • the thickness of the connection electrode and the external connection terminal was 20 ⁇ .
  • Ni, Au, and Ag plating were sequentially performed on the surface of the metal body exposed on the upper surface of the connection electrode, the external connection terminal, and the insulating base.
  • FIG. 6A to 6C are plan views of the fabricated surface-mount light-emitting element wiring board as viewed from below, and FIG. 6A is the surface-mount light-emitting element wiring board of the present invention.
  • Figure 6C shows a sample prepared as a comparative example. That is, FIG. 6B is a diagram showing a sample in which the metal body and the external connection terminal do not overlap in the thickness direction of the surface mount type light emitting device wiring board, and FIG. 6C is a diagram of the sample in which the through metal body is provided. .
  • a circle indicated by a broken line indicates the position of the metal body provided on the surface mount type light emitting element wiring board.
  • two external connection terminals 13 are formed in parallel so as to run vertically from one side of the insulating base to the opposite side, and the width W of the external connection terminal 13 is expressed. Changed as shown in 1. The distance G between the two external connection terminals 13 was also changed as shown in Table 1.
  • Table 1 shows the ratio of the area occupied by the external connection terminals to the bottom surface of the insulating substrate as S1, and the area where the metal body and the external connection terminals overlap is the cross-sectional area of the metal body viewed from above. Overlapping! / Injuring harm IJ combined is shown as S2.
  • the surface mount type light emitting device wiring board produced was a metal body of the same size placed in a bottomed hole with a diameter of 1.8 mm and a thickness of 0.4 mm placed on a 4 mm x 4 mm plate-shaped insulating substrate.
  • the thickness is 0.4 mm plus the thickness of the insulating substrate between the metal body and the external connection terminals listed in Table 1.
  • the thermal conductivity of the insulating substrate was 16 W / (m′K).
  • the tower A frame body having a width of 0.4 mm and a thickness of 0.3 mm was disposed along the end of the insulating base on the mounting portion side.
  • An epoxy resin is used as an adhesive on the mounting part of the wiring board for these surface-mounted light-emitting elements.
  • An LED chip which is a 5 W light-emitting element, is mounted, and the LED chip and connection terminals are connected by bonding wires to emit light. A device was made.
  • the obtained light-emitting device was mounted on an organic substrate with solder, a current of 0.4 A was passed through the light-emitting device, and the element temperature was measured after 1 minute. The results are shown in Table 1.
  • a light emitting device can be provided.

Abstract

Provided is a wiring board for a surface mounting type light emitting element, which has a high degree of freedom in designing, has small sizes and excellent heat dissipating characteristics. A light emitting device using such surface mounting type light emitting element is also provided. The wiring board (11) for the surface mounting type light emitting element is configured by arranging a metal body (5) in a bottomed hole (3) arranged on a flat-board-like insulating substrate (1) composed of ceramics. An external connecting terminal (13), for mounting the wiring board (11) on an external wiring board, and the metal body (5) are vertically arranged one over another in the thickness direction at least at one part. Thus, the wiring board (11) having a high degree of freedom in designing, has small sizes and excellent heat dissipating characteristics, and the light emitting device (29) using such wiring board are provided.

Description

明 細 書  Specification
表面実装型発光素子用配線基板および発光装置  SURFACE MOUNT LIGHT EMITTING DEVICE WIRING BOARD AND LIGHT EMITTING DEVICE
技術分野  Technical field
[0001] 本発明は、例えば、発光ダイオード等の発光素子を搭載するための表面実装型発 光素子用配線基板および発光装置に関する。  [0001] The present invention relates to a surface-mounting light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.
背景技術  Background art
[0002] 従来、 LED素子を用いた発光装置は、非常に発光効率が高ぐしかも、白熱電球 などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられて きた。しかしな力 Sら、白熱電球や蛍光灯などよりも発光量が小さいために、照明用で はなぐ表示用の光源として用いられ、通電量も 30mA程度と非常に小さいものであ つた (例えば、特開 2002— 134790号公報を参照)。  Conventionally, a light emitting device using an LED element has been used for various applications because it has a very high luminous efficiency and has a small amount of heat generated by light emission compared to an incandescent bulb. However, because the amount of emitted light is smaller than that of incandescent bulbs and fluorescent lamps, it is used as a light source for display that is not used for lighting, and the energization amount is very small at about 30 mA (for example, (See JP 2002-134790).
近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話ゃ大 型液晶ディスプレイ等のバックライトに発光装置が多く用いられてきている。しかしな がら、発光素子の輝度が向上するとともに、発光装置から発生する熱も増加している 。発光素子の輝度の低下を防止するためには、高い熱放散性を有する発光素子用 配線基板が必要となってレ、る (例えば、特開 2004 - 111937号公報を参照)。  In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, many light-emitting devices have been used for backlights of mobile phones and large liquid crystal displays. However, the brightness of the light emitting element is improved and the heat generated from the light emitting device is also increasing. In order to prevent a decrease in luminance of the light emitting element, a wiring board for the light emitting element having high heat dissipation is required (see, for example, JP-A-2004-111937).
このように、発光素子用配線基板において、放熱性は大きな課題となっている。とこ ろで、半導体素子の上側にヒートシンクを設けたり(例えば、特開平 8— 222668号公 報を参照)、半導体素子の下側にヒートシンクを設けたり(例えば、特開平 7— 25466 8号公報を参照)する従来の一般的な半導体素子を実装する配線基板の放熱構造 を、単純に LED素子を実装する発光素子用配線基板に適用することは以下に挙げ る理由により容易ではない。  Thus, in the wiring board for light emitting elements, heat dissipation is a major issue. Then, a heat sink is provided on the upper side of the semiconductor element (see, for example, Japanese Patent Laid-Open No. 8-222668), or a heat sink is provided on the lower side of the semiconductor element (for example, Japanese Patent Laid-Open No. 7-254668). For example, it is not easy to apply the conventional heat dissipation structure for a wiring board on which a semiconductor element is mounted to a light-emitting element wiring board on which an LED element is mounted.
例えば、 LED素子は lmm角以下と非常に小さぐそのため素子を実装する発光素 子用配線基板も小さいこと、そして、高輝度の LED装置は、携帯電話や液晶ディス プレイのバックライトなどさまざまな機器に搭載されることから、実装方法として利便性 のある表面実装が用いられることが挙げられる。  For example, the LED element is very small, less than lmm square, so the wiring board for the light-emitting element on which the element is mounted is also small, and the high-brightness LED device is used in various devices such as mobile phones and backlights for liquid crystal displays. As a mounting method, convenient surface mounting is used.
このような理由により、表面実装型の発光素子用配線基板においては、素子からの 熱をプリント基板等の 2次実装基板側に逃がすため、専ら発光素子用配線基板を貫 通するように放熱体が設けられている(例えば、特開 2003— 318448号公報を参照For this reason, in the surface mount type light emitting element wiring board, In order to release heat to the secondary mounting board side such as a printed circuit board, a heat radiating body is provided so as to pass through the wiring board for the light emitting element exclusively (for example, refer to Japanese Patent Laid-Open No. 2003-318448).
)。 ).
そして、発光素子用配線基板の放熱性を改善する手段として、発光素子用配線基 板に貫通金属体を設け、貫通金属体上に発光素子を搭載する例が提案されて!、る ( 例えば、特開 2006— 93565号公報を参照)。  As a means for improving the heat dissipation of the light emitting element wiring substrate, an example in which a through metal body is provided on the light emitting element wiring board and the light emitting element is mounted on the through metal body has been proposed! (See JP 2006-93565).
しかしながら、特開 2006— 93565号公報の方法では、貫通金属体を設けることで 放熱性を向上させることはできるものの、設計の自由度が著しく減少するという問題 がある。すなわち、貫通金属体を電気回路として用いない場合には、貫通金属体が 露出した部分には端子を設けることができないから、貫通金属体をさけて端子を作製 する必要がある。発光素子側の端子は小さくても十分に機能するため、特に問題は ないが、外部基板との接続端子が設けられた側では、両者の接続部から放熱する必 要もあり、外部電極端子の面積を大きくすることが求められている。そのため、貫通金 属体と大きな外部電極端子を備えた発光素子用配線基板を作製すると必然的に発 光素子用配線基板が大きくなるという問題がある。  However, the method disclosed in Japanese Patent Application Laid-Open No. 2006-93565 has a problem that the degree of freedom in design is significantly reduced although the heat dissipation can be improved by providing a through metal body. That is, when the through metal body is not used as an electric circuit, a terminal cannot be provided at a portion where the through metal body is exposed. Therefore, it is necessary to prepare the terminal by avoiding the through metal body. There is no particular problem because the terminals on the light-emitting element side are small enough to function properly.However, on the side where the connection terminals to the external board are provided, it is necessary to dissipate heat from the connection parts of both, and the external electrode terminals There is a need to increase the area. For this reason, when a wiring board for a light emitting element having a through metal body and a large external electrode terminal is manufactured, there is a problem that the wiring board for the light emitting element is necessarily enlarged.
また、表面実装型の発光素子用配線基板においては、ヒートシンクを表裏面に設け ることもままならないために、ますます、増加する発熱に対応することが困難である。 発明の開示  In addition, in the surface mount type light emitting device wiring board, it is difficult to cope with the increasing heat generation because the heat sinks are not always provided on the front and back surfaces. Disclosure of the invention
本発明は、設計の自由度が高ぐ小型化が可能で、熱放熱性に優れた表面実装型 発光素子用配線基板およびそれを用いた発光装置を提供することを目的とする。 本発明の表面実装型発光素子用配線基板は、上面に開口を有する有底穴を備え たセラミックスからなる絶縁基体と、上面に発光素子を搭載する搭載部を備え、前記 有底穴に配置された金属体と、前記絶縁基体の上面に形成された接続電極と、前記 絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端子とを 備えており、前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって 配置されている。なお、前記接続電極と前記外部接続端子とは、絶縁基体の内部に 形成された内部配線によって電気的に接続されていてもよぐ絶縁基体の側壁に形 成された外部配線によって電気的に接続されて!/、てもよレ、。 本発明の表面実装型発光素子用配線基板は、金属体が絶縁基体に形成された有 底穴に配置されていることから、前記金属体がヒートシンクの役割を果たし、発光素 子が発生させる熱を金属体、絶縁基体および外部接続端子を経て外部基板に放出 すること力 Sでき、発光素子が過剰に加熱されることを防止できる。そのため、輝度低下 防止あるいは、さらなる高輝度化が可能となる。 SUMMARY OF THE INVENTION An object of the present invention is to provide a surface-mount type light-emitting element wiring board that has a high degree of design freedom and can be miniaturized and is excellent in heat dissipation, and a light-emitting device using the same. A wiring board for a surface-mounted light-emitting element according to the present invention includes an insulating base made of ceramics having a bottomed hole having an opening on an upper surface, and a mounting portion for mounting the light-emitting element on an upper surface, and is disposed in the bottomed hole. A metal electrode, a connection electrode formed on the upper surface of the insulating base, and an external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode. The external connection terminals are arranged so that at least a part overlaps the top and bottom. The connection electrode and the external connection terminal are electrically connected by an external wiring formed on the side wall of the insulating base, which may be electrically connected by an internal wiring formed inside the insulating base. Be it! / In the surface mount type light emitting element wiring board of the present invention, since the metal body is disposed in the bottomed hole formed in the insulating base, the metal body serves as a heat sink and the heat generated by the light emitting element. Can be released to the external substrate through the metal body, the insulating base and the external connection terminal, and the light emitting element can be prevented from being heated excessively. For this reason, it is possible to prevent a decrease in luminance or to further increase the luminance.
そして、金属体と外部接続端子との間に絶縁基体が介在するため、金属体が表面 実装型発光素子用配線基板の下面に露出することがなくなり、外部接続端子を自由 に設計することができるため、表面実装型発光素子用配線基板の小型化に寄与し、 接続信頼性や実装信頼性を考慮した配線設計を行うこともできる。  Since the insulating base is interposed between the metal body and the external connection terminal, the metal body is not exposed on the lower surface of the surface mount type light emitting element wiring board, and the external connection terminal can be freely designed. Therefore, it contributes to the miniaturization of the surface mounting type light emitting element wiring board, and the wiring design considering the connection reliability and the mounting reliability can also be performed.
そして、金属体と外部接続端子とを少なくとも一部が表面実装型発光素子用配線 基板の厚み方向で絶縁基体を介在させて上下に重ねて配置することで、発光素子 が発生させる熱の前記金属体から系外へと放出される経路を短く形成することができ 、発光素子の過度の温度上昇を抑制することができる。  The metal body and the external connection terminal are arranged so that at least part of the metal body and the external connection terminal are vertically stacked with an insulating base interposed in the thickness direction of the surface mounting type light emitting element wiring board, whereby the heat generated by the light emitting element A path from the body to the outside of the system can be formed short, and an excessive temperature rise of the light emitting element can be suppressed.
また本発明の表面実装型発光素子用配線基板は、上面に発光素子を搭載する搭 載部を有する絶縁基体と、前記搭載部の直下の前記絶縁基体の内部に埋設された 金属体と、前記絶縁基体の上面に形成された接続電極と、前記絶縁基体の下面に 形成され前記接続電極と電気的に接続された外部接続端子とを備えており、前記金 属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されていることが 好ましい。この場合、前記搭載部に独立した金属膜が形成されている力、または前記 接続電極が延出してレ、ることが望ましレ、。  The wiring board for a surface-mounted light-emitting element according to the present invention includes an insulating base having a mounting portion on which the light-emitting element is mounted on the upper surface, a metal body embedded in the insulating base immediately below the mounting portion, A connection electrode formed on the upper surface of the insulating base; and an external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode. The metal body and the external connection terminal It is preferable that at least a part of the layers overlap each other. In this case, it is desirable that an independent metal film is formed on the mounting portion, or that the connection electrode is extended.
さらに、本発明の表面実装型発光素子用配線基板は、金属体が絶縁基体の内部 に埋設され、金属体が絶縁基体の上面に露出しない場合には、接続電極や実装部 品の配置を自由に設計することができるため、表面実装型発光素子用配線基板の小 型化に寄与することができる。  Furthermore, the surface mount type light emitting device wiring board of the present invention can freely arrange the connection electrodes and mounting parts when the metal body is embedded in the insulating base and the metal body is not exposed on the top surface of the insulating base. Therefore, it can contribute to miniaturization of the wiring board for the surface mount type light emitting element.
また、絶縁基体の上面に形成される接続電極としては、電位差の加わる接続電極 がー対あって、フリップチップ型 (フェースダウン構造)の発光素子を実装して発光素 子の電極端子をそれぞれの接続電極に接続させるとした場合に金属体が絶縁基体 の上面に露出していると、この電位差の加わる一対の接続電極を電気的に接続させ てしまうこととなる。これに対し、金属体が絶縁基体の上面に露出しない場合には、フ リップチップ型 (フェースダウン構造)の発光素子を実装したとしても、一対の接続電 極を電気的に接続させることなく金属体を配置でき、十分な放熱効果を得ることがで きる。 In addition, the connection electrodes formed on the upper surface of the insulating base have a pair of connection electrodes to which a potential difference is applied. A flip-chip type (face-down structure) light-emitting element is mounted, and the electrode terminals of the light-emitting elements are respectively connected. If the metal body is exposed on the upper surface of the insulating substrate when connected to the connection electrode, the pair of connection electrodes to which this potential difference is applied are electrically connected. Will end up. On the other hand, when the metal body is not exposed on the upper surface of the insulating substrate, even if a flip chip type (face-down structure) light-emitting element is mounted, the metal body is not electrically connected to the pair of connection electrodes. The body can be placed and a sufficient heat dissipation effect can be obtained.
そして、金属体と接続電極との間に絶縁基体が介在する場合であり、かつ搭載部 に独立した金属膜が形成されているかまたは接続電極が延出している場合には、発 光素子の実装時に熱伝導性の高い材料を用いて発光素子と搭載部とを接合するこ とができる。例えば、搭載部に Auめっきが施された金属膜が形成されている場合、 A uSn接合により発光素子を実装することで、高い放熱効果を得ることができる。また、 搭載部に独立した金属膜が形成されているかまたは接続電極が延出していることで 、光が搭載部で反射されるため光の取り出し効率の向上につながるという効果も得ら れる。例えば、表面に反射率の高い Agめっきが施されている場合には、光の取り出 し効率を向上させることができる。  When an insulating base is interposed between the metal body and the connection electrode, and an independent metal film is formed on the mounting portion or the connection electrode extends, the light emitting element is mounted. Sometimes, the light emitting element and the mounting portion can be joined using a material having high thermal conductivity. For example, when a metal film plated with Au is formed on the mounting portion, a high heat dissipation effect can be obtained by mounting the light emitting element by AuSn bonding. In addition, since an independent metal film is formed on the mounting portion or the connection electrode is extended, the light is reflected by the mounting portion, so that the light extraction efficiency can be improved. For example, when Ag plating with high reflectivity is applied to the surface, the light extraction efficiency can be improved.
また、上記本発明の表面実装型発光素子用配線基板は、前記セラミックスの熱伝 導率が 15W/ (m'K)以上、前記金属体と前記外部接続端子との間の前記絶縁基 体の厚みが 50〜200 111であり、前記金属体の下面の 30%以上が前記外部接続 端子と上下に重なって配置されて!/、ることが望ましレ、。  The wiring board for a surface-mounted light-emitting element according to the present invention has a thermal conductivity of the ceramic of 15 W / (m′K) or more, and the insulating substrate between the metal body and the external connection terminal. Desirably, the thickness is 50 to 200 111, and 30% or more of the lower surface of the metal body is disposed so as to overlap with the external connection terminals.
またさらに、本発明の表面実装型発光素子用配線基板は、絶縁基体を形成するセ ラミックスの熱伝導率が 15W/ (m*K)以上、金属体と外部接続端子との間の絶縁基 体の厚みが 50〜200 111であり、金属体の下面の 30%以上が外部接続端子と上下 に重なって配置されていることで、熱伝導を妨げる絶縁層の影響が少なぐさらに高 V、放熱効果を実現することができる。  Furthermore, the surface mount type light emitting device wiring board of the present invention has a thermal conductivity of 15 W / (m * K) or more of the ceramic forming the insulating base, and the insulating substrate between the metal body and the external connection terminal. The thickness of the body is 50 to 200 111, and 30% or more of the lower surface of the metal body is arranged so as to overlap with the external connection terminals. A heat dissipation effect can be realized.
本発明の発光装置は、以上説明した表面実装型発光素子用配線基板の前記搭載 部に発光素子を搭載してなる。  The light-emitting device of the present invention is obtained by mounting a light-emitting element on the mounting portion of the wiring board for a surface-mounted light-emitting element described above.
以上説明した本発明の表面実装型発光素子用配線基板の搭載部に発光素子を 搭載した本発明の発光装置によれば、金属体と外部接続端子を用いて発光素子か らの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑 制でき、し力、も外部接続端子の設計の自由度が高いため、小型化を実現することが できる。 According to the light emitting device of the present invention in which the light emitting element is mounted on the mounting portion of the wiring board for the surface mount light emitting element of the present invention described above, the heat generated from the light emitting element can be quickly generated using the metal body and the external connection terminal. Since it can be discharged outside the device, it can suppress the decrease in brightness due to heat generation, and the design force of the external connection terminal is high, so it can be downsized. it can.
図面の簡単な説明  Brief Description of Drawings
[0004] 本発明の目的、特色、および利点は、下記の詳細な説明と図面とからより明確にな るであろう。  [0004] Objects, features, and advantages of the present invention will become more apparent from the following detailed description and drawings.
図 1Aは、本発明の一実施形態の表面実装型発光素子用配線基板の断面図であ り、図 1Bは、本発明の他の実施形態の表面実装型発光素子用配線基板の断面図 である。  FIG. 1A is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to one embodiment of the present invention, and FIG. 1B is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to another embodiment of the present invention. is there.
図 2Aは、本発明の一実施形態の発光装置の断面図であり、図 2Bは、本発明の他 の実施形態の発光装置の断面図である。  FIG. 2A is a cross-sectional view of a light-emitting device according to an embodiment of the present invention, and FIG. 2B is a cross-sectional view of a light-emitting device according to another embodiment of the present invention.
図 3Aは、本発明のさらに他の実施形態の表面実装型発光素子用配線基板の断 面図であり、図 3Bは、本発明のさらに他の実施形態の表面実装型発光素子用配線 基板の断面図である。  FIG. 3A is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to still another embodiment of the present invention, and FIG. 3B is a wiring board for a surface-mounted light-emitting element according to still another embodiment of the present invention. It is sectional drawing.
図 4Aは、本発明のさらに他の実施形態の表面実装型発光素子用配線基板の断 面図であり、図 4Bは、本発明の表面実装型発光素子用配線基板にフリップチップ型 の発光素子を実装した本発明のさらに他の実施形態の発光装置の断面図である。 図 5Aは、本発明のさらに他の実施形態の発光装置の断面図であり、図 5Bは、本 発明のさらに他の実施形態の発光装置の断面図である。  FIG. 4A is a cross-sectional view of a wiring board for a surface-mounted light-emitting element according to still another embodiment of the present invention, and FIG. 4B is a flip-chip light-emitting element on the wiring board for the surface-mounted light-emitting element of the present invention. It is sectional drawing of the light-emitting device of further another embodiment of this invention which mounted | wore. FIG. 5A is a cross-sectional view of a light-emitting device according to still another embodiment of the present invention, and FIG. 5B is a cross-sectional view of a light-emitting device according to still another embodiment of the present invention.
図 6Aは、本発明の表面実装型発光素子用配線基板を下力も見た平面図であり、 図 6Bおよび図 6Cは、比較例の表面実装型発光素子用配線基板を下から見た平面 図である。  6A is a plan view of the surface mount type light emitting device wiring board according to the present invention as viewed from below, and FIGS. 6B and 6C are plan views of the surface mount type light emitting device wiring board of the comparative example as viewed from below. It is.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0005] 以下図面を参考にして本発明の好適な実施形態を詳細に説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
本発明の一実施形態の表面実装型発光素子用配線基板 11は、例えば、図 1Aに 示すように、セラミックスからなる平板状の絶縁基体 1と、この絶縁基体 1に形成された 有底穴 3を備えている。この有底穴 3には金属体 5が配置され、この金属体 5の上側 に発光素子を搭載する搭載部 7が形成されて!/、る。  As shown in FIG. 1A, for example, a wiring board 11 for a surface-mounted light-emitting element according to an embodiment of the present invention includes a flat insulating base 1 made of ceramics and a bottomed hole 3 formed in the insulating base 1. It has. A metal body 5 is disposed in the bottomed hole 3, and a mounting portion 7 for mounting a light emitting element is formed on the upper side of the metal body 5.
さらに、絶縁基体 1の上面 laには搭載部 7に搭載される発光素子の電極と電気的 に接続される接続電極 9が配置され、絶縁基体 1の下面 lbには、本発明の表面実装 型発光素子用配線基板 11を外部配線基板等に電気的に接続するための外部接続 端子 13が配置されている。 Furthermore, a connection electrode 9 that is electrically connected to the electrode of the light emitting element mounted on the mounting portion 7 is disposed on the upper surface la of the insulating substrate 1, and the surface mounting of the present invention is performed on the lower surface lb of the insulating substrate 1. An external connection terminal 13 for electrically connecting the wiring board 11 for type light emitting element to an external wiring board or the like is disposed.
また、接続電極 9と外部接続端子 13とを電気的に接続する内部配線 15が絶縁基 体 1の内部に絶縁基体 1を貫通するように配置されている。そして、本発明の表面実 装型発光素子用配線基板 11においては、金属体 5と外部接続端子 13とが少なくとも 一部で上下方向で重なって配置されていることが重要である。  In addition, an internal wiring 15 that electrically connects the connection electrode 9 and the external connection terminal 13 is disposed so as to penetrate the insulating substrate 1 inside the insulating substrate 1. In the surface mounted light emitting element wiring substrate 11 of the present invention, it is important that the metal body 5 and the external connection terminal 13 are arranged so as to overlap at least partially in the vertical direction.
すなわち、金属体 5が絶縁基体 1の搭載部 7の下の有底穴 3に埋設されることにより 、本発明の表面実装型発光素子用配線基板 11に搭載される発光素子から発生した 熱を速やかに金属体 5に伝達させることで発光素子の温度が過剰に上昇することを 防ぎ、発光素子の輝度低下を抑制し、さらには高輝度化を実現することができる。 また、金属体 5が有底穴 3に配置されることにより、表面実装型発光素子用配線基 板 11の下面 lbに金属体 5が露出することがなくなるため、外部接続端子 13の配線 設計の自由度が高くなり、表面実装型発光素子用配線基板 11の小型化が可能とな る。また、実装信頼性に考慮した設計も容易となる。さらに、金属体 5と外部接続端子 13とが表面実装型発光素子用配線基板 11の厚み方向で上下に重なって配置され ている、換言すれば、外部接続端子 13の一部が上から見て金属体 5と重なっている ことから、発光素子から発生し、熱伝導率の高い金属体 5に伝達された熱が熱伝導 率の高い外部接続端子 13を通って系外へ放出されるため、発光素子の過度な発熱 を防止することが可能となる。  That is, when the metal body 5 is embedded in the bottomed hole 3 under the mounting portion 7 of the insulating base 1, heat generated from the light emitting element mounted on the surface mount type light emitting element wiring substrate 11 of the present invention is generated. By promptly transmitting the light to the metal body 5, it is possible to prevent the temperature of the light emitting element from excessively rising, to suppress a decrease in luminance of the light emitting element, and to achieve higher luminance. Further, since the metal body 5 is arranged in the bottomed hole 3, the metal body 5 is not exposed to the lower surface lb of the surface mount type light emitting device wiring board 11, so that the wiring design of the external connection terminal 13 can be reduced. The degree of freedom is high, and the surface mount type light emitting element wiring board 11 can be miniaturized. In addition, it is easy to design in consideration of mounting reliability. Further, the metal body 5 and the external connection terminal 13 are arranged so as to overlap each other in the thickness direction of the surface mount type light emitting element wiring board 11, in other words, a part of the external connection terminal 13 is seen from above. Since it overlaps with the metal body 5, the heat generated from the light emitting element and transferred to the metal body 5 with high thermal conductivity is released outside the system through the external connection terminal 13 with high thermal conductivity. It is possible to prevent excessive heat generation of the light emitting element.
また、本発明の表面実装型発光素子用配線基板 11においては外部接続端子 13 が絶縁基体 1の下面 lbに占める割合が面積比率で 45%以上であることが望ましい。 すなわち、外部接続端子 13が大きな面積を占めることにより、表面実装型発光素子 用配線基板 11にお!/、て高!、放熱性を実現することができ、同時に接続信頼性や実 装信頼性を考慮した配線設計を行うことも可能である。この外部接続端子 13の面積 比率は、特に 60%以上であることが望ましい。  Further, in the surface mount type light emitting element wiring board 11 of the present invention, it is desirable that the ratio of the external connection terminals 13 to the lower surface lb of the insulating substrate 1 is 45% or more in terms of area ratio. In other words, the external connection terminal 13 occupies a large area, so that the surface mount type light emitting device wiring board 11 can be realized with high heat dissipation and at the same time connection reliability and mounting reliability. It is also possible to perform wiring design considering the above. The area ratio of the external connection terminals 13 is preferably 60% or more.
また、金属体 5の下面の 30%以上、さらには 45%以上、特に 65%以上が外部接 続端子 13と上下に重なって配置されていることが望ましい。このように金属体 5と外部 接続端子 13の重なりを大きくすることにより、より一層表面実装型発光素子用配線基 板 11の放熱効果を高めることができる。 Further, it is desirable that 30% or more, further 45% or more, particularly 65% or more of the lower surface of the metal body 5 is arranged so as to overlap the external connection terminal 13 in the vertical direction. By increasing the overlap between the metal body 5 and the external connection terminal 13 in this way, the wiring substrate for the surface mount light emitting element is further increased. The heat dissipation effect of the plate 11 can be enhanced.
また、金属体 5と外部接続端子 13との間の絶縁基体 1の厚みが 50〜200 mであ ることが望まし!/、。この厚みを 50 a m以上とすることによって金属体 5と外部接続端子 13との絶縁信頼性を確保することができ、また 200 m以下にすることによって金属 体 5から外部接続端子 13の距離を短くすることができるため、放熱経路を短くするこ とができる。そのため、金属体 5と外部接続端子 13との間の絶縁基体 1の厚みは特に βθ— ΐ δθ , ΐη,さらに好適には 80〜100 111であることが望ましい。  In addition, it is desirable that the thickness of the insulating base 1 between the metal body 5 and the external connection terminal 13 is 50 to 200 m! /. By setting this thickness to 50 am or more, the insulation reliability between the metal body 5 and the external connection terminal 13 can be secured, and by making the thickness 200 m or less, the distance from the metal body 5 to the external connection terminal 13 is shortened. Therefore, the heat dissipation path can be shortened. Therefore, the thickness of the insulating substrate 1 between the metal body 5 and the external connection terminal 13 is preferably βθ−ΐδθ, ΐη, more preferably 80 to 100111.
また、絶縁基体 1として、 15W/ (m'K)以上の熱伝導率を有する材料を用いること が望ましい。これにより、表面実装型発光素子用配線基板 11の放熱性をさらに高め ること力 Sでさる。  Further, as the insulating substrate 1, it is desirable to use a material having a thermal conductivity of 15 W / (m′K) or more. As a result, the power S for further enhancing the heat dissipation of the surface mount type light emitting element wiring substrate 11 can be obtained.
本発明の表面実装型発光素子用配線基板 11にお!/、ては、これらの要件を総合的 に備えた場合、すなわち、絶縁基体 1を形成するセラミックスの熱伝導率が 15W/ ( m'K)以上、金属体 5と外部接続端子 13との間の絶縁基体 1の厚みが 50〜200 mであり、金属体 5の下面の 30%以上が外部接続端子 13と上下に重なって配置さ れている場合に、特に優れた放熱効果を発揮する。  The surface mount type light emitting element wiring board 11 of the present invention has a comprehensively satisfying these requirements, that is, the thermal conductivity of the ceramic forming the insulating substrate 1 is 15 W / (m ′ K) Above, the thickness of the insulating base 1 between the metal body 5 and the external connection terminal 13 is 50 to 200 m, and 30% or more of the lower surface of the metal body 5 is arranged so as to overlap the external connection terminal 13 vertically. In particular, it exhibits an excellent heat dissipation effect.
この絶縁基体 1として、 Al Oを主結晶相とする Al O質焼結体を用いた場合には  In the case of using an Al 2 O-based sintered body with Al 2 O as the main crystal phase as the insulating substrate 1
2 3 2 3  2 3 2 3
、安価な原料を使用でき、安価な表面実装型発光素子用配線基板 11を得ることがで きる。  Inexpensive raw materials can be used, and an inexpensive surface mount type light emitting element wiring substrate 11 can be obtained.
なお、 Al Oを主結晶相とする Al O質焼結体とは、例えば、 X線回折によって、 A1  Note that the Al 2 O-type sintered body having Al 2 O as the main crystal phase is, for example, A1 by X-ray diffraction.
2 3 2 3  2 3 2 3
Oのピークが主ピークとして検出されるようなもので、 Al Oの結晶を体積比率とし The O peak is detected as the main peak.
2 3 2 3 2 3 2 3
て、 50体積%以上含有していることが望ましい。 Therefore, it is desirable to contain 50% by volume or more.
また、このような焼結体は、例えば、平均粒径 1. 0〜2. 0 mの純度 99%以上の A 1 O粉末に、平均粒径 1. 0—2. 0 a m( Mn O、 SiO、 MgO、 CaO、 SrOの群力、 In addition, such a sintered body has, for example, an A 1 O powder having an average particle size of 1.0 to 2.0 m and a purity of 99% or more, an average particle size of 1.0 to 2.0 am (Mn O, Group power of SiO, MgO, CaO, SrO,
2 3 2 3 2 2 3 2 3 2
ら選ばれる少なくとも 1種の焼結助剤を添加した成形体を 1300〜; 1600°Cの温度範 囲で焼成することによって得られるものである。なお、本明細書において「平均粒径」 とは、粉体の集団の全体積を 100%として累積カーブを求めたとき、その累積カーブ が 50%となる点の粒径 d50を意味する。粉体の粒度分布は、たとえばレーザ回折- 散乱法によるマイクロトラック粒度分布測定装置 X— 100 (日機装株式会社製)を用 いて測定した。 It is obtained by firing a molded body to which at least one kind of sintering aid selected from 1300 to 1600 ° C and a temperature range of 1600 ° C. In the present specification, the “average particle size” means the particle size d50 at which the cumulative curve is 50% when the cumulative curve is obtained with the total volume of the powder group as 100%. For the particle size distribution of the powder, for example, X-100 (manufactured by Nikkiso Co., Ltd.) is used. And measured.
そして、焼結助剤などの、 Al O以外の組成物の添加量については、 Al Oを主結  For the addition amount of compositions other than Al O, such as sintering aids, Al O is the main component.
2 3 2 3 晶とする緻密体を得るために、望ましくは 15質量%以下、更に望ましくは、 10質量% 以下とすることが望ましい。特に、焼結助剤などの、 Al O以外の組成物の添加量が  In order to obtain a dense body having 2 3 2 3 crystals, it is desirably 15% by mass or less, and more desirably 10% by mass or less. In particular, the amount of composition other than Al 2 O, such as sintering aids, is
2 3  twenty three
15質量%以下とした場合には、得られる絶縁基体 1の大部分を Al O結晶により形  When the content is 15% by mass or less, most of the obtained insulating substrate 1 is formed of Al 2 O crystals.
2 3  twenty three
成すること力 Sできる。また、これらの焼結助剤は、焼成温度を低くするために 5質量% 以上、さらには 7質量%以上添加することが望ましい。 The ability to achieve S. These sintering aids are preferably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature.
なお、絶縁基体 1に用いるセラミックスとして、ガラスセラミックス、酸化マグネシウム、 酸化ジルコニウム、窒化アルミニウム、窒化珪素、ムライト、コーディエライトなどを主 結晶とする焼結体を用いても良い。  As the ceramic used for the insulating substrate 1, a sintered body mainly composed of glass ceramics, magnesium oxide, zirconium oxide, aluminum nitride, silicon nitride, mullite, cordierite, or the like may be used.
また、金属体 5として、絶縁基体 1よりも熱伝導率の高い材料を用いることが望ましく 、金属体 5の熱伝導率は、特に、 150W/ (m'K)以上であることが望ましい。これに より、金属体 5のヒートシンクとしての効果をさらに高め、高い放熱性を得ることができ る。具体的には、 Cu、 Cu— W、 Ag、 Al、 W、 Moなどを用いることができる。  In addition, it is desirable to use a material having a higher thermal conductivity than the insulating substrate 1 as the metal body 5, and the thermal conductivity of the metal body 5 is particularly preferably 150 W / (m′K) or more. As a result, the effect of the metal body 5 as a heat sink can be further enhanced, and high heat dissipation can be obtained. Specifically, Cu, Cu—W, Ag, Al, W, Mo, or the like can be used.
そして、金属体 5の構造は直方体形状、円柱形状、さらには多段形状であってもよ い。金属体 5が直方体形状の場合、金属体 5の体積を最大限に大きくすることができ 、高い放熱性を実現する。円柱形上の場合、応力集中を防ぎ、高信頼性を持たせる こと力 Sできる。多段形状の場合、絶縁基体 1との接触面積が大きいため、絶縁基体 1 との接合信頼性を高くすることができる。  The metal body 5 may have a rectangular parallelepiped shape, a cylindrical shape, or a multistage shape. When the metal body 5 has a rectangular parallelepiped shape, the volume of the metal body 5 can be maximized and high heat dissipation can be realized. In the case of a cylindrical shape, it is possible to prevent stress concentration and provide high reliability. In the case of a multi-stage shape, since the contact area with the insulating base 1 is large, the bonding reliability with the insulating base 1 can be increased.
また、図 1Bに示すように、本発明の他の実施形態の表面実装型発光素子用配線 基板 11Aには、搭載部 7に搭載される発光素子からの光を誘導するため、あるいは 発光素子を保護するために、絶縁基体 1の上面 laに枠体 17を設けてもよい。この枠 体 17により、発光素子を保護できるとともに、発光素子の周辺に蛍光体などを容易に 配置すること力 Sできる。また、枠体 17により発光素子の発する光を反射させて所定の 方向に誘導することもできる。枠体 17の内壁面 17aは、絶縁基体 1の上面 laに対し て垂直であっても良いし、傾斜していても良い。枠体 17の内壁面 17aが外部に向か つて傾斜している場合は、光の取り出し効率がさらに上昇する。  In addition, as shown in FIG. 1B, the surface mount type light emitting element wiring board 11A according to another embodiment of the present invention is provided with a light emitting element for guiding light from the light emitting element mounted on the mounting portion 7 or a light emitting element. For protection, a frame 17 may be provided on the upper surface la of the insulating substrate 1. The frame 17 can protect the light emitting element and can easily arrange a phosphor or the like around the light emitting element. In addition, the light emitted from the light emitting element can be reflected by the frame body 17 and guided in a predetermined direction. The inner wall surface 17a of the frame body 17 may be perpendicular to the upper surface la of the insulating substrate 1 or may be inclined. When the inner wall surface 17a of the frame 17 is inclined outward, the light extraction efficiency is further increased.
枠体 17は、セラミックスでも金属でもよく、絶縁基体 1と同じ材料を用いた場合は、 絶縁基体 1との高レ、信頼性を得られ、高熱伝道材料や高反射率材料のセラミックスま たは金属を用いることにより、より高い放熱性や光取り出し効率を得ることができる。 次に、本発明における表面実装型発光素子用配線基板 11 , 11Aの製造方法につ いて具体的に説明する。まず、以下に説明するように、セラミックグリーンシート、金属 シート、および導体ペーストを作製する。 The frame 17 may be ceramic or metal, and when the same material as the insulating base 1 is used, High heat and reliability with the insulating substrate 1 can be obtained, and higher heat dissipation and light extraction efficiency can be obtained by using ceramics or metal of high heat transfer material or high reflectivity material. Next, a method for manufacturing the surface mount type light emitting element wiring boards 11 and 11A in the present invention will be specifically described. First, as described below, a ceramic green sheet, a metal sheet, and a conductor paste are prepared.
セラミックグリーンシートは、セラミック粉末と樹脂と溶剤とを所定の割合で混合して 調整したセラミックスラリーから、従来周知のドクターブレード法などによりシート上に 形成する。また、金属シートも、金属粉末、樹脂および溶剤などから形成される金属 スラリーからドクターブレード法などによりシート状に形成する。なお、金属スラリーに は必要に応じてセラミック粉末を含有させてもよい。セラミックグリーンシート並びに金 属シートに用いるセラミック粉末、金属粉末の粒径は平均粒径で 0. 01〜; lO ^ m程 度のものが好適に用いられ、特に、 1〜5 mの範囲の粉末が取り扱いや焼結性に 優れている。  The ceramic green sheet is formed on a sheet from a ceramic slurry prepared by mixing ceramic powder, a resin, and a solvent at a predetermined ratio, by a conventionally known doctor blade method or the like. The metal sheet is also formed into a sheet shape by a doctor blade method or the like from a metal slurry formed from a metal powder, a resin and a solvent. The metal slurry may contain ceramic powder as necessary. Ceramic powders and metal powders used for ceramic green sheets and metal sheets preferably have an average particle size of 0.01 to about 10 to 10 m, especially powders in the range of 1 to 5 m. Is excellent in handling and sinterability.
また、望ましくは Cu、 Ag、 W、 Moのうち少なくとも 1種を主成分とする導体ペースト を作製する。これらの金属を用いることで、絶縁基体 1と同時焼成して、接続電極 9、 外部接続端子 13および内部配線 15を形成することが可能となり、安価な表面実装 型発光素子用配線基板 11を得ることができる。導体ペーストは金属粉末、樹脂およ び溶剤を所定の割合で混合し、溶剤を減圧過熱等によって除くことにより作製される 。必要に応じてセラミック粉末を含有させてもよい。導体ペーストに用いる金属粉末、 セラミック粉末の粒径は平均粒径で 0. 01〜; 10 m程度のものが好適に用いられ、 特に、 1〜5 mの範囲の粉末が取り扱!/、や焼結性に優れて!/、る。  Desirably, a conductor paste containing at least one of Cu, Ag, W, and Mo as a main component is prepared. By using these metals, it is possible to form the connection electrode 9, the external connection terminal 13 and the internal wiring 15 by firing together with the insulating base 1, and to obtain an inexpensive surface mount type light emitting element wiring substrate 11 be able to. The conductive paste is produced by mixing metal powder, resin and solvent in a predetermined ratio and removing the solvent by heating under reduced pressure. Ceramic powder may be included as necessary. The average particle size of the metal powder and ceramic powder used in the conductive paste is 0.01 to 10 m, and the powder is preferably used in the range of 1 to 5 m. Excellent sinterability!
セラミックグリーンシートにマイクロドリルやレーザー等によりビアホールを形成し、印 刷等の方法でこのビアホールに導体ペーストを充填し、また、セラミックグリーンシート 表面に導体ペーストを印刷して配線を形成する。そして、セラミックグリーンシートの 所定箇所に貫通穴を形成した後、貫通穴を形成したセラミックグリーンシートに金属 シートを積層し、セラミックグリーンシートにおける貫通穴形成部分を金属シート側か ら押圧することによって、金属シートの一部を貫通穴内に埋め込み、セラミックダリー ンシートと金属シートとを一体化する。なお、このときセラミックグリーンシートと金属シ 一トは略同一厚みであることが望ましレ、。 A via hole is formed in the ceramic green sheet with a micro drill or laser, and the via hole is filled with a conductor paste by a method such as printing, and the conductor paste is printed on the surface of the ceramic green sheet to form a wiring. Then, after forming a through hole at a predetermined location of the ceramic green sheet, a metal sheet is laminated on the ceramic green sheet in which the through hole is formed, and a through hole forming portion in the ceramic green sheet is pressed from the metal sheet side, Part of the metal sheet is embedded in the through hole, and the ceramic liner sheet and the metal sheet are integrated. At this time, the ceramic green sheet and metal sheet It is desirable that the thickness is almost the same thickness.
このシートを複数積層し、酸化雰囲気、還元雰囲気、あるいは不活性雰囲気で焼 成することで、表面や内部に接続電極 9、外部接続端子 13、内部配線 15、および金 属体 5が形成された表面実装型発光素子用配線基板 11を作製することができる。 また、接続電極 9および外部接続端子 13は、薄膜法によって絶縁基体 1の表面に 形成したり、金属箔を成形体の表面に転写するなどして形成してもよぐ金属体 5は、 予め、焼成しておいた絶縁基体 1にはんだ、銀ロウおよび活性ロウなどを用いて純金 属のプ 'ロックを接着して形成してもよレ、。  A plurality of these sheets were laminated and baked in an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere, so that the connection electrode 9, the external connection terminal 13, the internal wiring 15, and the metal 5 were formed on the surface and inside. The surface mount type light emitting element wiring substrate 11 can be manufactured. In addition, the connection body 9 and the external connection terminal 13 may be formed on the surface of the insulating substrate 1 by a thin film method, or may be formed by transferring a metal foil onto the surface of the molded body. Also, a pure metal block may be bonded to the baked insulating substrate 1 using solder, silver solder or active solder.
そして、図 1Bに示すような枠体 17は、セラミックグリーンシートを打ち抜き加工し、 絶縁基体 1のセラミックグリーンシートに積層し、同時焼成を行うことによって形成する こと力 Sできる。また、切削やエッチングにより A1や Fe— Ni— Co合金等の金属を枠状 に形成し、焼結した絶縁基体 1にロウ剤や樹脂を用いて接着することも可能である。 ロウ剤を用いて接着する場合には、絶縁基体 1と枠体 17の接着面に、金属ペースト を用いて金属層(図示せず)を形成しておくことが必要である。  A frame 17 as shown in FIG. 1B can be formed by punching a ceramic green sheet, laminating it on the ceramic green sheet of the insulating substrate 1, and performing simultaneous firing. It is also possible to form a metal such as A1 or Fe—Ni—Co alloy in the shape of a frame by cutting or etching and adhere it to the sintered insulating substrate 1 using a brazing agent or resin. When bonding using a brazing agent, it is necessary to form a metal layer (not shown) using a metal paste on the bonding surface between the insulating substrate 1 and the frame 17.
また、接続電極 9、外部接続端子 13、金属体 5、および枠体 17の表面に Ni、 Au、 A1や Agなどからなるめっき層(図示せず)を形成して、反射率を高め、発光素子から 生じる光の取り出し効率を向上させてもよい。  In addition, a plating layer (not shown) made of Ni, Au, A1, Ag, or the like is formed on the surface of the connection electrode 9, the external connection terminal 13, the metal body 5, and the frame body 17 to increase reflectivity and emit light. The extraction efficiency of light generated from the element may be improved.
そして、例えば、図 2Aおよび図 2Bに示すように、以上説明した本発明の表面実装 型発光素子用配線基板 11 , 11Aの搭載部 7に、発光素子 21を金属や樹脂からなる 接続層 23を用いて搭載し、この発光素子 21の端子(図示せず)と、接続電極 9とをボ ンデイングワイヤ 25で接続し、発光素子 21、接続層 23やボンディングワイヤ 25をモ 一ルド材などの透光性の封止樹脂 27等で覆うことで、本発明の一実施形態の発光 装置 29および本発明の他の実施形態の発光装置 29Aとなる。  Then, for example, as shown in FIGS. 2A and 2B, the light emitting element 21 is provided with a connection layer 23 made of metal or resin on the mounting portion 7 of the surface mount type light emitting element wiring board 11 or 11A of the present invention described above. The terminal (not shown) of the light emitting element 21 and the connection electrode 9 are connected by a bonding wire 25, and the light emitting element 21, the connection layer 23, and the bonding wire 25 are made of a molding material or the like. By covering with a translucent sealing resin 27 or the like, a light emitting device 29 according to an embodiment of the present invention and a light emitting device 29A according to another embodiment of the present invention are obtained.
また、発光素子 21は、封止樹脂 27により被覆されているが、封止樹脂 27を用いず に、蓋体(図示せず)を用いて封止してもよぐまた、封止樹脂 27と蓋体とを併用して もよい。この場合に用いられる蓋体としては、ガラスなどの透光性の素材を用いること が望ましい。  Further, although the light emitting element 21 is covered with the sealing resin 27, the light emitting element 21 may be sealed using a lid (not shown) without using the sealing resin 27. And a lid may be used in combination. As the lid used in this case, it is desirable to use a light-transmitting material such as glass.
なお、必要に応じて、この封止樹脂 27に発光素子 21が放射する光を波長変換す るための蛍光体(図示せず)を添加してもよレ、。 If necessary, the wavelength of the light emitted from the light emitting element 21 is converted into this sealing resin 27. You can also add a phosphor (not shown).
また、発光素子 21の熱を金属体 5に効率よく伝達するという観点から、接続層 23と して半田、インジウム、 AuSn合金などの金属を用いることが望ましい。  Further, from the viewpoint of efficiently transferring the heat of the light emitting element 21 to the metal body 5, it is desirable to use a metal such as solder, indium, or AuSn alloy as the connection layer 23.
なお、本発明においてもヒートシンクを設けることで、更に放熱性が向上することは もちろんであり、例えば、冷却装置を設けることを排除するものではない。  In the present invention, it is a matter of course that the heat dissipation is further improved by providing a heat sink. For example, it is not excluded to provide a cooling device.
以上説明した本発明の表面実装型発光素子用配線基板 11 , 11Aに発光素子 21 を搭載した本発明の発光装置 29, 29Aによれば、金属体 5と外部接続端子 13を通 して、発光素子 21からの発熱を速やかに装置外に放出することができるため、発熱 による輝度低下を抑制でき、また、外部接続端子 13の設計の自由度が高いため、小 型化を実現することができる。  According to the light-emitting device 29, 29A of the present invention in which the light-emitting element 21 is mounted on the surface mount type light-emitting element wiring board 11, 11A of the present invention described above, light is emitted through the metal body 5 and the external connection terminal 13. Since the heat generated from the element 21 can be quickly released outside the device, it is possible to suppress a decrease in luminance due to the generated heat, and the external connection terminal 13 has a high degree of freedom in design, and thus can be downsized. .
なお、本発明の表面実装型発光素子用配線基板における接続電極 9と外部接続 端子 13との電気的な接続は、内部配線 15による接続のみならず、図 3Aに示す本発 明のさらに他の実施形態の表面実装型発光素子用配線基板 11Bのように、外部配 線 16による接続であってもよい。  In addition, the electrical connection between the connection electrode 9 and the external connection terminal 13 in the surface mount type light emitting element wiring board of the present invention is not limited to the connection by the internal wiring 15, but is still another embodiment of the present invention shown in FIG. 3A. The connection by the external wiring 16 may be used like the surface mount type light emitting element wiring board 11B of the embodiment.
また、図 3Bに示すように、本発明のさらに他の実施形態の表面実装型発光素子用 配線基板 11Cには、金属体 5の下面を下側から覆うように、絶縁基体 1の上面 laと平 行にカバーランド 31を設けてもよい。これによつて、金属体 5と絶縁基体 1との界面の 応力緩和という効果に加えて、金属体 5から外部接続端子 13へ熱が多く伝わるように なり、さらに放熱性を向上させることができるという効果も得られ、高い信頼性を得るこ とが可能となる。  In addition, as shown in FIG. 3B, the surface mount type light emitting element wiring board 11C according to still another embodiment of the present invention includes an upper surface la of the insulating substrate 1 so as to cover the lower surface of the metal body 5 from below. A cover land 31 may be provided in parallel. As a result, in addition to the effect of stress relaxation at the interface between the metal body 5 and the insulating substrate 1, a large amount of heat is transferred from the metal body 5 to the external connection terminal 13, and the heat dissipation can be further improved. In other words, high reliability can be obtained.
これまで述べた形態では金属体 5が絶縁基体 1の上面 laに露出していた力 S、図 4A に示す本発明のさらに他の実施形態の表面実装型発光素子用配線基板 11Dのよう に、金属体 5が搭載部 7の直下の絶縁基体 1の内部に埋設され、金属体 5と接続電極 9との間に絶縁基体 1が介在するようにしてもよい。この場合は、金属体 5が絶縁基体 1の上面 laに露出することがなぐ接続電極 9の形状や発光素子 21以外の実装部品 の配置についての制約はなくなり、設計の自由度が高くなる。すなわち、表面実装型 発光素子用配線基板の小型化に寄与することができる。この形態においては、搭載 部 7は上から見て金属体 5の断面に範囲内にある、換言すれば金属体 5の上から見 た断面の外周が搭載部 7よりも外側に位置するのが好ましい。なお、ここでいう搭載 部 7とは絶縁基体 1の上面 laの発光素子 21が搭載される領域、換言すれば上から 見て発光素子 21と重なる絶縁基体 1の上面領域のことを意味する。 In the embodiment described so far, the force S in which the metal body 5 is exposed on the upper surface la of the insulating substrate 1, like the surface mount type light emitting element wiring substrate 11D of still another embodiment of the present invention shown in FIG. The metal body 5 may be embedded in the insulating base 1 immediately below the mounting portion 7 so that the insulating base 1 is interposed between the metal body 5 and the connection electrode 9. In this case, there is no restriction on the shape of the connection electrode 9 and the arrangement of the mounting parts other than the light emitting element 21 that the metal body 5 is not exposed on the upper surface la of the insulating base 1, and the degree of freedom in design is increased. That is, it can contribute to miniaturization of the surface mount type light emitting element wiring board. In this embodiment, the mounting portion 7 is within the cross section of the metal body 5 when viewed from above, in other words, when viewed from above the metal body 5. It is preferable that the outer periphery of the cross section is located outside the mounting portion 7. Here, the mounting portion 7 means a region where the light emitting element 21 on the upper surface la of the insulating substrate 1 is mounted, in other words, an upper surface region of the insulating substrate 1 overlapping the light emitting element 21 when viewed from above.
そして、図 4Bに示す本発明のさらに他の実施形態の発光装置 29Bのように、絶縁 基体 1の内部に金属体 5を埋設することで、フリップチップ型 (フェースダウン構造)の 発光素子を実装した場合であっても、一対の接続電極を電気的に接続してしまうこと なく金属体を配置できることから、十分な放熱効果を得ることができる。すなわち、絶 縁基体の上面に形成される接続電極としては、電位差の加わる接続電極が一対あつ て、フリップチップ型 (フェースダウン構造)の発光素子を実装して発光素子の電極端 子をそれぞれの接続電極に接続させるとした場合に金属体が絶縁基体の上面に露 出していると、この電位差の加わる一対の接続電極を電気的に接続させてしまうこと となる。これに対し、金属体が絶縁基体の上面に露出しない場合には、フリップチッ プ型 (フェースダウン構造)の発光素子を実装したとしても、一対の接続電極を電気 的に接続させることなく金属体を配置でき、十分な放熱効果を得ることができる。 このとき、金属体 5と接続電極 9との間の絶縁基体 1の厚み(金属体 5の上面から絶 縁基体 1の上面 laまでの距離)は、金属体 5と外部接続端子 13との間の絶縁基体 1 の厚みと同様に、絶縁性および放熱性の点から 50〜200 μ m、特に 60〜; 150 μ m、 さらに好適には 80〜; 100 mであることが望ましい。  Then, like a light emitting device 29B according to still another embodiment of the present invention shown in FIG. 4B, a flip chip type (face-down structure) light emitting element is mounted by embedding a metal body 5 inside the insulating substrate 1. Even in such a case, the metal body can be disposed without electrically connecting the pair of connection electrodes, so that a sufficient heat radiation effect can be obtained. That is, as the connection electrodes formed on the upper surface of the insulating substrate, there are a pair of connection electrodes to which a potential difference is applied, and a flip-chip (face-down structure) light-emitting element is mounted, and the electrode terminals of the light-emitting elements are respectively connected. If the metal body is exposed on the upper surface of the insulating substrate when connected to the connection electrode, the pair of connection electrodes to which this potential difference is applied are electrically connected. On the other hand, if the metal body is not exposed on the upper surface of the insulating substrate, the metal body can be connected without electrically connecting the pair of connection electrodes even if a flip-chip (face-down structure) light-emitting element is mounted. It can arrange | position and can acquire sufficient heat dissipation effect. At this time, the thickness of the insulating substrate 1 between the metal body 5 and the connection electrode 9 (the distance from the upper surface of the metal body 5 to the upper surface la of the insulating substrate 1) is between the metal body 5 and the external connection terminal 13. Similarly to the thickness of the insulating substrate 1, it is desirable that the thickness is 50 to 200 μm, particularly 60 to 150 μm, more preferably 80 to 100 m from the viewpoint of insulation and heat dissipation.
さらに、金属体 5と接続電極 9との間に絶縁基体 1が介在する場合であり、かつ搭載 部 7に独立した金属膜 8が形成されている力、または接続電極 9が延出している場合に は、発光素子 21の実装時に熱伝導性の高い材料を用いて発光素子 21と搭載部 7と を接合すること力できる。  Furthermore, when the insulating substrate 1 is interposed between the metal body 5 and the connection electrode 9 and the force that the independent metal film 8 is formed on the mounting portion 7 or when the connection electrode 9 extends In addition, when the light emitting element 21 is mounted, the light emitting element 21 and the mounting portion 7 can be joined using a material having high thermal conductivity.
ここで、搭載部 7に接続電極 9が延出しているとは、図 5Aに示す本発明のさらに他 の実施形態の発光装置 29Cのように、図 2Aに示す一対の接続電極 9のうちの一方 が絶縁基体 1の上面 laに平行な方向に延びて接続電極 9が搭載部 7の全領域に形 成されていることを意味する。また、搭載部 7に独立した金属膜 8が形成されていると は、図 5Bに示す本発明のさらに他の実施形態の発光装置 29Dのように、接続電極 9 とは電気的に接続されていない金属膜 8が搭載部 7の全領域に形成されたことを意 味する。 Here, the connection electrode 9 is extended to the mounting portion 7 as in the light emitting device 29C according to still another embodiment of the present invention shown in FIG. 5A, of the pair of connection electrodes 9 shown in FIG. 2A. One of them extends in a direction parallel to the upper surface la of the insulating substrate 1, meaning that the connection electrode 9 is formed in the entire region of the mounting portion 7. Further, the fact that the independent metal film 8 is formed on the mounting portion 7 means that it is electrically connected to the connection electrode 9 as in the light emitting device 29D of still another embodiment of the present invention shown in FIG. 5B. This means that no metal film 8 was formed in the entire area of the mounting part 7. Taste.
例えば、搭載部 7に Auめっきが施された金属膜 8が形成されている場合、 AuSn合 金を用いた接合で発光素子 21を実装することで、高い放熱効果を得ることができる。 また、搭載部 7に独立した金属膜 8が形成されている力、または接続電極が延出してい ることで、光が搭載部 7で反射されるため光の取り出し効率の向上につながるという効 果も得られる。例えば、表面に反射率の高い Agめっきが施されている場合には、光 の取り出し効率を向上させることができる。  For example, when the mounting part 7 has the metal film 8 plated with Au, a high heat dissipation effect can be obtained by mounting the light emitting element 21 by bonding using AuSn alloy. In addition, the force that the independent metal film 8 is formed on the mounting portion 7 or the extension of the connection electrode causes the light to be reflected by the mounting portion 7, leading to an improvement in light extraction efficiency. Can also be obtained. For example, the light extraction efficiency can be improved when Ag plating with high reflectivity is applied to the surface.
実施例 Example
表面実装型発光素子用配線基板の絶縁基体の原料粉末として純度 99%以上、平 均粒径が 1. 5 111の八1 O粉末、純度 99%以上、平均粒径 1. 0 111の310粉末、  As the raw material powder for the insulating substrate of the wiring board for surface-mounted light-emitting devices, the purity is 99% or more, the average particle size is 1.5 111 8 1 O powder, the purity is 99% or more, the average particle size is 1.0 111, 310 powder ,
2 3 2 純度 99%以上、平均粒径 1. 5 μ ΐηの Mn O粉末を用い、 Al O粉末 90質量%、 Si  2 3 2 Mn O powder with a purity of 99% or more and an average particle size of 1.5 μΐη, Al O powder 90% by mass, Si
2 3 2 3  2 3 2 3
O粉末 5質量%、 Mn O粉末 5質量%を混合し、成形用有機樹脂 (バインダ)として Mixing 5% by mass of O powder and 5% by mass of Mn O powder as an organic resin (binder) for molding
2 2 3 2 2 3
アクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。しかる後に、 ドクターブレード法にてセラミックグリーンシートを作製した。 An acrylic binder and toluene were mixed as a solvent to prepare a slurry. Thereafter, a ceramic green sheet was prepared by a doctor blade method.
また、金属シートの原料粉末として、平均粒径 2. 0 111の\¥ぉょびじ11を用ぃ、 Cu 粉末 30質量%、 W粉末 70質量%を混合し、成形用有機樹脂 (バインダ)としてアタリ ル系バインダと、トルエンを溶媒として添加し、セラミックグリーンシートと同様に、金属 シートとなるスラリーを調整後、ドクターブレード法にてセラミックグリーンシートと実質 的に同一厚みの金属シートを作製した。  In addition, as the raw material powder for the metal sheet, a powder 11 with an average particle size of 2.0 111 is used, and 30% by mass of Cu powder and 70% by mass of W powder are mixed together to form an organic resin (binder) for molding. After adding an talyl-based binder and toluene as a solvent and preparing a slurry to be a metal sheet in the same manner as the ceramic green sheet, a metal sheet having substantially the same thickness as the ceramic green sheet was prepared by the doctor blade method.
また、平均粒径 2 111の Cu粉末 30質量0 /0、平均粒径 2 mの W粉、アクリル系バイ ンダとアセトンとを溶媒として混合し、溶剤を減圧過熱等によって除くことにより導体ぺ 一ストを調製した。 The average particle size of 2 111 of Cu powder 30 mass 0/0, W powder having an average grain size of 2 m, an acrylic-by Sunda and acetone were mixed as a solvent, the conductor pair one by removing the solvent by vacuum heating or the like A strike was prepared.
そして、上記の絶縁基体となるセラミックグリーンシートに対して、打ち抜き加工を施 し、直径が 100 mのビアホールを形成し、このビアホール内に、導体ペーストをスク リーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。  Then, the ceramic green sheet as the insulating base is punched to form a via hole having a diameter of 100 m. The via hole is filled with a conductive paste by a screen printing method, and a wiring pattern is formed. Was printed and applied.
次に、セラミックグリーンシートの所定箇所に貫通穴を形成し、セラミックグリーンシ ートにおける貫通穴形成部分を金属シートから押圧することによって、金属シートの 一部を貫通穴内に埋め込み、セラミックグリーンシートと金属シートと一体化した。 このようにして作製したセラミックグリーンシートと金属シートの複合体、およびセラミ ックグリーンシートを組み合わせ、位置合わせし、積層圧着して積層体を作製した。 その後、露点 + 25°Cの窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点 + 25°Cの窒素水素混合雰囲気にて 1300°Cで 2時間焼成し、表面実装型発光素子 用配線基板を作製した。なお、接続電極、外部接続端子の厚みは 20 πιとした。 次いで、接続電極、外部接続端子、絶縁基体の上面に露出する金属体の表面に Ni、 Auおよび Agめっきを順次施した。 Next, a through hole is formed at a predetermined position of the ceramic green sheet, and a part of the metal sheet is embedded in the through hole by pressing a through hole forming portion of the ceramic green sheet from the metal sheet. Integrated with metal sheet. The composite of the ceramic green sheet and metal sheet thus produced, and the ceramic green sheet were combined, aligned, and laminated and pressed to produce a laminate. After degreasing in a nitrogen-hydrogen mixed atmosphere with dew point + 25 ° C, it was subsequently baked for 2 hours at 1300 ° C in a nitrogen-hydrogen mixed atmosphere with dew point + 25 ° C. A substrate was produced. The thickness of the connection electrode and the external connection terminal was 20 πι. Subsequently, Ni, Au, and Ag plating were sequentially performed on the surface of the metal body exposed on the upper surface of the connection electrode, the external connection terminal, and the insulating base.
作製した本発明の表面実装型発光素子用配線基板および本発明の範囲外の表 面実装型発光素子用配線基板の形状は、以下の記載と図 6A〜図 6Cを用いて説明 する。  The shape of the produced surface mount type light emitting element wiring board of the present invention and the surface mount type light emitting element wiring board outside the scope of the present invention will be described using the following description and FIGS. 6A to 6C.
図 6A〜図 6Cに示したのは、作製した表面実装型発光素子用配線基板を下から見 た平面図であり、図 6Aが本発明の表面実装型発光素子用配線基板であり、図 6Bお よび図 6Cが比較例として作製した試料である。つまり、図 6Bは金属体と外部接続端 子とが表面実装型発光素子用配線基板の厚み方向で重ならない試料を示した図で あり、図 6Cは貫通金属体を設けた試料の図である。なお、図 6Aおよび図 6Bにおい て破線で示した円は表面実装型発光素子用配線基板に設けられた金属体の位置を 示すものである。  6A to 6C are plan views of the fabricated surface-mount light-emitting element wiring board as viewed from below, and FIG. 6A is the surface-mount light-emitting element wiring board of the present invention. Figure 6C shows a sample prepared as a comparative example. That is, FIG. 6B is a diagram showing a sample in which the metal body and the external connection terminal do not overlap in the thickness direction of the surface mount type light emitting device wiring board, and FIG. 6C is a diagram of the sample in which the through metal body is provided. . In FIG. 6A and FIG. 6B, a circle indicated by a broken line indicates the position of the metal body provided on the surface mount type light emitting element wiring board.
全ての試料において、外部接続端子 13は、絶縁基体の一方の辺から対向する他 方の辺に縦断するように長方形状の 2つを平行に形成し、この外部接続端子 13の幅 Wを表 1に示すように変化させた。また、 2つの外部接続端子 13間の距離 Gも表 1に 示すように変化させた。  In all samples, two external connection terminals 13 are formed in parallel so as to run vertically from one side of the insulating base to the opposite side, and the width W of the external connection terminal 13 is expressed. Changed as shown in 1. The distance G between the two external connection terminals 13 was also changed as shown in Table 1.
また、表 1には、外部接続端子が絶縁基体の下面に対して占める面積の割合を S 1 として示し、金属体と外部接続端子との重なる面積が、上から見た金属体の断面積 に対して重なって!/ヽる害 IJ合を S2として示した。  Table 1 shows the ratio of the area occupied by the external connection terminals to the bottom surface of the insulating substrate as S1, and the area where the metal body and the external connection terminals overlap is the cross-sectional area of the metal body viewed from above. Overlapping! / Injuring harm IJ combined is shown as S2.
作製した表面実装型発光素子用配線基板は 4mm X 4mmの板状の絶縁基体に設 けた直径 1. 8mmで厚みが 0. 4mmの有底穴に同じ大きさの金属体を配置したもの で、厚みは 0. 4mmに表 1に記載する金属体と外部接続端子との間の絶縁基体の厚 みを加えたものである。絶縁基体の熱伝導率は、 16W/ (m'K)であった。また、搭 載部側には幅が 0. 4mmで厚みが 0. 3mmの枠体を絶縁基体の端に沿って配置し た。 The surface mount type light emitting device wiring board produced was a metal body of the same size placed in a bottomed hole with a diameter of 1.8 mm and a thickness of 0.4 mm placed on a 4 mm x 4 mm plate-shaped insulating substrate. The thickness is 0.4 mm plus the thickness of the insulating substrate between the metal body and the external connection terminals listed in Table 1. The thermal conductivity of the insulating substrate was 16 W / (m′K). Also, the tower A frame body having a width of 0.4 mm and a thickness of 0.3 mm was disposed along the end of the insulating base on the mounting portion side.
なお、表 1中の試料 No. 11については、金属体と接続電極との間に、金属体と外 部接続端子との間の絶縁基体厚みと同じ絶縁基体厚みを設けた。したがって、穴の 形状を有蓋底穴とした。  For Sample No. 11 in Table 1, the same insulating substrate thickness as that between the metal body and the external connection terminal was provided between the metal body and the connection electrode. Therefore, the shape of the hole was a covered bottom hole.
これらの表面実装型発光素子用配線基板の搭載部に接着剤としてエポキシ樹脂を 用いて出力 1. 5Wの発光素子である LEDチップを実装し、ボンディングワイヤにより LEDチップと接続端子とを結線し発光装置を作製した。  An epoxy resin is used as an adhesive on the mounting part of the wiring board for these surface-mounted light-emitting elements. An LED chip, which is a 5 W light-emitting element, is mounted, and the LED chip and connection terminals are connected by bonding wires to emit light. A device was made.
得られた発光装置を有機基板に半田にて実装し、発光装置に 0. 4Aの電流を通電 し、 1分後の素子温度の測定を行った。結果を表 1に示す。  The obtained light-emitting device was mounted on an organic substrate with solder, a current of 0.4 A was passed through the light-emitting device, and the element temperature was measured after 1 minute. The results are shown in Table 1.
[表 1] [table 1]
*印は本発明範囲外を示している。 表 1によれば、貫通穴を設けた試料 No. 1では、金属体の下部には空気しかないた め、発光素子の温度が 86°Cまで上昇した。また、有底穴の中に金属体が配置されて はいるものの、金属体と外部接続端子とが重ならない試料 No. 2では、熱の伝達経 路が長くなり、発光素子の温度が 88°Cまで上昇した。発光素子の温度が 80°Cを超え ると、発光効率がかなり低下してしまうので、 80°C以下に抑えることが求められる。 これに対し、有底穴の中に金属体を配置し、外部接続端子の一部が上から見て金 属体と重なっている本発明の試料 No. 3-10,および絶縁基体の内部における搭 載部の直下に金属体が埋設された試料 No. 11では、発光素子の温度上昇を 80°C 以下に抑えることができた。 * Indicates outside the scope of the present invention. According to Table 1, in Sample No. 1 with through holes, the temperature of the light-emitting element rose to 86 ° C because there was only air under the metal body. In Sample No. 2, where the metal body is placed in the bottomed hole but the metal body and the external connection terminal do not overlap, the heat transfer path becomes longer and the temperature of the light emitting element is 88 ° C. Rose to C. If the temperature of the light-emitting element exceeds 80 ° C, the light emission efficiency will be considerably reduced, so it is required to keep it below 80 ° C. In contrast, Sample No. 3-10 of the present invention in which a metal body is arranged in the bottomed hole and a part of the external connection terminal overlaps with the metal body as viewed from above, and the inside of the insulating substrate. Tower In Sample No. 11, in which a metal body was buried directly under the mounting part, the temperature rise of the light emitting element could be suppressed to 80 ° C or lower.
以上、説明したとおり、本発明によれば、表面実装型発光素子用配線基板の設計 の自由度を向上させることができるとともに、放熱性に優れた表面実装型発光素子用 配線基板およびそれを用いた発光装置を提供することができる。  As described above, according to the present invention, it is possible to improve the degree of freedom in designing a surface-mounting light-emitting element wiring board and to provide a surface-mounting light-emitting element wiring board excellent in heat dissipation and to use the same. A light emitting device can be provided.
本発明は、その精神または主要な特徴から逸脱することなぐ他のいろいろな形態 で実施できる。したがって、前述の実施形態はあらゆる点で単なる例示に過ぎず、本 発明の範囲は特許請求の範囲に示すものであって、明細書本文には何ら拘束され ない。さらに、特許請求の範囲に属する変形や変更は全て本発明の範囲内のもので ある。  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects, and the scope of the present invention is shown in the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the scope of claims are within the scope of the present invention.

Claims

請求の範囲 The scope of the claims
[1] 上面に開口を有する有底穴を備えたセラミックスからなる絶縁基体と、  [1] an insulating substrate made of ceramics with a bottomed hole having an opening on the upper surface;
上面に発光素子を搭載する搭載部を備え、前記有底穴に配置された金属体と、 前記絶縁基体の上面に形成された接続電極と、  A mounting portion for mounting a light emitting element on the upper surface; a metal body disposed in the bottomed hole; a connection electrode formed on the upper surface of the insulating base;
前記絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端 子とを備えており、  An external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode;
前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されて The metal body and the external connection terminal are arranged so that at least a part thereof overlaps vertically.
V、る表面実装型発光素子用配線基板。 V, a wiring board for surface-mounted light-emitting elements.
[2] 前記接続電極と前記外部接続端子とが前記絶縁基体の内部に形成された内部配 線によって電気的に接続されている請求項 1に記載の表面実装型発光素子用配線 基板。  [2] The wiring board for a surface-mounted light-emitting element according to [1], wherein the connection electrode and the external connection terminal are electrically connected by an internal wiring formed inside the insulating base.
[3] 上面に発光素子を搭載する搭載部を有するセラミックスからなる絶縁基体と、 前記搭載部の直下の前記絶縁基体の内部に埋設された金属体と、  [3] An insulating base made of ceramics having a mounting portion on which the light emitting element is mounted on the upper surface, a metal body embedded in the insulating base immediately below the mounting portion,
前記絶縁基体の上面に形成された接続電極と、  A connection electrode formed on the upper surface of the insulating substrate;
前記絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端 子とを備えており、  An external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode;
前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されて The metal body and the external connection terminal are arranged so that at least a part thereof overlaps vertically.
V、る表面実装型発光素子用配線基板。 V, a wiring board for surface-mounted light-emitting elements.
[4] 前記搭載部に独立した金属膜が形成されてレ、る力、または前記接続電極が延出して いる請求項 3に記載の表面実装型発光素子用配線基板。  4. The surface-mount type light emitting device wiring board according to claim 3, wherein an independent metal film is formed on the mounting portion, and the connecting force extends.
[5] 前記セラミックスの熱伝導率が 15W/ (m'K)以上、前記金属体と前記外部接続端 子との間の前記絶縁基体の厚みが 50〜200 μ mであり、前記金属体の下面の 30% 以上が前記外部接続端子と上下に重なって配置されている請求項 1〜4のうちいず れかに記載の表面実装型発光素子用配線基板。 [5] The thermal conductivity of the ceramic is 15 W / (m′K) or more, the thickness of the insulating base between the metal body and the external connection terminal is 50 to 200 μm, The wiring board for a surface-mounted light-emitting element according to any one of claims 1 to 4, wherein 30% or more of the lower surface is disposed so as to overlap with the external connection terminals.
[6] 請求項;!〜 5のうちいずれかに記載の表面実装型発光素子用配線基板の前記搭 載部に発光素子を搭載してなる発光装置。 [6] A light-emitting device comprising a light-emitting element mounted on the mounting portion of the surface-mounting light-emitting element wiring board according to any one of claims 5 to 5.
PCT/JP2007/068291 2006-09-26 2007-09-20 Wiring board for surface mounting type light emitting element and light emitting device WO2008038574A1 (en)

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