WO2008039280A3 - Real time process monitoring and control for semicontor layers - Google Patents

Real time process monitoring and control for semicontor layers Download PDF

Info

Publication number
WO2008039280A3
WO2008039280A3 PCT/US2007/018333 US2007018333W WO2008039280A3 WO 2008039280 A3 WO2008039280 A3 WO 2008039280A3 US 2007018333 W US2007018333 W US 2007018333W WO 2008039280 A3 WO2008039280 A3 WO 2008039280A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
group
during
semicontor
layers
Prior art date
Application number
PCT/US2007/018333
Other languages
French (fr)
Other versions
WO2008039280A2 (en
Inventor
Vedapuram S Achutharaman
Wen Chang
Tarpan Dixit
Philip Kraus
Original Assignee
Solyndra Inc
Vedapuram S Achutharaman
Wen Chang
Tarpan Dixit
Philip Kraus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solyndra Inc, Vedapuram S Achutharaman, Wen Chang, Tarpan Dixit, Philip Kraus filed Critical Solyndra Inc
Publication of WO2008039280A2 publication Critical patent/WO2008039280A2/en
Publication of WO2008039280A3 publication Critical patent/WO2008039280A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group HIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
PCT/US2007/018333 2006-08-16 2007-08-16 Real time process monitoring and control for semicontor layers WO2008039280A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60/838,244 2006-08-16
US83824406P 2006-08-18 2006-08-18

Publications (2)

Publication Number Publication Date
WO2008039280A2 WO2008039280A2 (en) 2008-04-03
WO2008039280A3 true WO2008039280A3 (en) 2008-05-22

Family

ID=39110537

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/018333 WO2008039280A2 (en) 2006-08-16 2007-08-16 Real time process monitoring and control for semicontor layers

Country Status (1)

Country Link
WO (1) WO2008039280A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216479A (en) * 2013-04-25 2014-11-17 富士フイルム株式会社 Method of manufacturing photoelectric conversion element

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260772A (en) * 1989-07-20 1993-11-09 Pollak Fred H Method and apparatus for determining a material's characteristics by photoreflectance
WO1996025768A1 (en) * 1993-04-12 1996-08-22 Midwest Research Institute METHOD OF FABRICATING HIGH-EFFICIENCY Cu(In,Ga)(Se,S)2 THIN FILMS FOR SOLAR CELLS
EP0756318A1 (en) * 1995-07-24 1997-01-29 International Business Machines Corporation Method for real-time in-situ monitoring of a trench formation process
US5725671A (en) * 1994-04-18 1998-03-10 Matsushita Electric Industrial Co., Ltd. Apparatus for manufacturing chalcopyrite film
US6162296A (en) * 1995-03-15 2000-12-19 Mitsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing chalcopyrite semiconductor thin films

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260772A (en) * 1989-07-20 1993-11-09 Pollak Fred H Method and apparatus for determining a material's characteristics by photoreflectance
WO1996025768A1 (en) * 1993-04-12 1996-08-22 Midwest Research Institute METHOD OF FABRICATING HIGH-EFFICIENCY Cu(In,Ga)(Se,S)2 THIN FILMS FOR SOLAR CELLS
US5725671A (en) * 1994-04-18 1998-03-10 Matsushita Electric Industrial Co., Ltd. Apparatus for manufacturing chalcopyrite film
US6162296A (en) * 1995-03-15 2000-12-19 Mitsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing chalcopyrite semiconductor thin films
EP0756318A1 (en) * 1995-07-24 1997-01-29 International Business Machines Corporation Method for real-time in-situ monitoring of a trench formation process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEGAMI T ET AL: "REAL TIME COMPOSITION MONITORING METHODS IN PHYSICAL VAPOR DEPOSITION OF CU(IN,GA)SE2 THIN FILMS", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, US, vol. 426, 8 April 1996 (1996-04-08), pages 267 - 278, XP009003530, ISSN: 0272-9172 *

Also Published As

Publication number Publication date
WO2008039280A2 (en) 2008-04-03

Similar Documents

Publication Publication Date Title
WO2011068660A3 (en) Method for improving performance of a substrate carrier
WO2011153095A3 (en) Metal gate structures and methods for forming thereof
WO2012057517A3 (en) Compound semiconductor device and method for manufacturing a compound semiconductor
WO2004095552A3 (en) Method for producing a tensioned layer on a substrate, and a layer structure
FR2933234B1 (en) GOODLY DUAL STRUCTURE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
WO2013027041A3 (en) A semiconductor laser device and a method for manufacturing a semiconductor laser device
WO2011068711A3 (en) High mobility monolithic p-i-n diodes
SE0400582D0 (en) Method for in-line process control of the CIGS process
WO2010138811A3 (en) Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
WO2010070485A3 (en) Methods for manufacturing panels
WO2010065251A3 (en) Methods of fabricating substrates
WO2008099246A3 (en) Multilayer structure and its fabrication process
TW200711007A (en) Methods and apparatus having wafer level chip scale package for sensing elements
FR2933233B1 (en) GOOD RESISTANCE HIGH RESISTIVITY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
TW200741972A (en) Semiconductor device and method for making the same
EA201071184A1 (en) METHOD FOR DEPOSITING A THIN LAYER
WO2012118713A3 (en) Process for patterning materials in thin-film devices
WO2010018961A3 (en) Solar cell and method for manufacturing same
WO2009085948A3 (en) Material modification in solar cell fabrication with ion doping
WO2009153701A3 (en) Appearance-modifying device, method for manufacturing such a device, and method for operating such a device
SG138523A1 (en) Method of integrating triple gate oxide thickness
WO2011156349A3 (en) Methods for forming interconnect structures
WO2010044642A3 (en) Semiconductor light emitting device and method for manufacturing the same
EP1684362A3 (en) Process for the production of thin layers, preferably for a photovoltaic cell
WO2012064636A3 (en) Contact pad and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07837043

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07837043

Country of ref document: EP

Kind code of ref document: A2