WO2008052047A3 - Vortex chamber lids for atomic layer deposition - Google Patents

Vortex chamber lids for atomic layer deposition Download PDF

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Publication number
WO2008052047A3
WO2008052047A3 PCT/US2007/082369 US2007082369W WO2008052047A3 WO 2008052047 A3 WO2008052047 A3 WO 2008052047A3 US 2007082369 W US2007082369 W US 2007082369W WO 2008052047 A3 WO2008052047 A3 WO 2008052047A3
Authority
WO
WIPO (PCT)
Prior art keywords
dispersing channel
gas dispersing
chamber
gas
atomic layer
Prior art date
Application number
PCT/US2007/082369
Other languages
French (fr)
Other versions
WO2008052047A2 (en
Inventor
Dien-Yeh Wu
Puneet Bajaj
Xiaoxiong Yuan
Steven H Kim
Schubert S Chu
Paul F Ma
Joseph F Aubuchon
Original Assignee
Applied Materials Inc
Dien-Yeh Wu
Puneet Bajaj
Xiaoxiong Yuan
Steven H Kim
Schubert S Chu
Paul F Ma
Joseph F Aubuchon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Dien-Yeh Wu, Puneet Bajaj, Xiaoxiong Yuan, Steven H Kim, Schubert S Chu, Paul F Ma, Joseph F Aubuchon filed Critical Applied Materials Inc
Priority to KR1020127006822A priority Critical patent/KR101432257B1/en
Priority to CN200780039651XA priority patent/CN101528973B/en
Priority to KR1020137035044A priority patent/KR101448447B1/en
Publication of WO2008052047A2 publication Critical patent/WO2008052047A2/en
Publication of WO2008052047A3 publication Critical patent/WO2008052047A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate

Abstract

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates (210) during atomic layer deposition processes. In one embodiment, a chamber (200) for processing substrates (210) is provided which includes a chamber (200) lid assembly (232) containing a centrally positioned gas dispersing channel (234), wherein a converging portion of the gas dispersing channel (234) tapers towards a central axis of the gas dispersing channel (234) and a diverging portion of the gas dispersing channel (234) tapers away from the central axis. The chamber (200) lid assembly (232) further contains a tapered bottom surface (260) extending from the diverging portion of the gas dispersing channel (234) to a peripheral portion of the chamber (200) lid assembly (232), wherein the tapered bottom surface (260) is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets (236a,b) within the converging portion of the gas dispersing channel (234) and positioned to provide a circular gas flow through the gas dispersing channel (234).
PCT/US2007/082369 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition WO2008052047A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020127006822A KR101432257B1 (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition
CN200780039651XA CN101528973B (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition
KR1020137035044A KR101448447B1 (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86276406P 2006-10-24 2006-10-24
US60/862,764 2006-10-24

Publications (2)

Publication Number Publication Date
WO2008052047A2 WO2008052047A2 (en) 2008-05-02
WO2008052047A3 true WO2008052047A3 (en) 2008-12-11

Family

ID=39325378

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/082369 WO2008052047A2 (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition

Country Status (4)

Country Link
KR (3) KR20090083404A (en)
CN (4) CN102586761B (en)
TW (2) TWI476297B (en)
WO (1) WO2008052047A2 (en)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
US9175394B2 (en) 2010-03-12 2015-11-03 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
KR101701257B1 (en) 2013-03-14 2017-02-01 어플라이드 머티어리얼스, 인코포레이티드 Thin film encapsulation - thin ultra high barrier layer for oled application
US9890456B2 (en) * 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
JP6487747B2 (en) 2015-03-26 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and processing gas supply nozzle
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy Fluid distributing device for a thin-film deposition apparatus, related apparatus and methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999019260A1 (en) * 1997-10-10 1999-04-22 Magne Waskaas Method and apparatus for reduction of flow resistance in pipes and ducts
US6306216B1 (en) * 1999-07-15 2001-10-23 Moohan Co., Ltd. Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
US6818250B2 (en) * 2000-06-29 2004-11-16 The Regents Of The University Of Colorado Method for forming SIO2 by chemical vapor deposition at room temperature

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AUPO129096A0 (en) * 1996-07-26 1996-08-22 Boc Gases Australia Limited Oxygen dissolver for pipelines or pipe outlets
US5951771A (en) * 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
US6213049B1 (en) * 1997-06-26 2001-04-10 General Electric Company Nozzle-injector for arc plasma deposition apparatus
US6495233B1 (en) * 1999-07-09 2002-12-17 Applied Materials, Inc. Apparatus for distributing gases in a chemical vapor deposition system
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6734020B2 (en) * 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6632325B2 (en) * 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
CN102154628B (en) * 2004-08-02 2014-05-07 维高仪器股份有限公司 Multi-gas distribution injector for chemical vapor deposition reactors
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999019260A1 (en) * 1997-10-10 1999-04-22 Magne Waskaas Method and apparatus for reduction of flow resistance in pipes and ducts
US6306216B1 (en) * 1999-07-15 2001-10-23 Moohan Co., Ltd. Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
US6818250B2 (en) * 2000-06-29 2004-11-16 The Regents Of The University Of Colorado Method for forming SIO2 by chemical vapor deposition at room temperature

Also Published As

Publication number Publication date
CN101528973B (en) 2012-04-25
KR101448447B1 (en) 2014-10-13
TW201241228A (en) 2012-10-16
CN102586761A (en) 2012-07-18
KR20090083404A (en) 2009-08-03
TWI410518B (en) 2013-10-01
KR20140009593A (en) 2014-01-22
CN102586761B (en) 2014-10-15
CN101528973A (en) 2009-09-09
KR101432257B1 (en) 2014-08-21
TWI476297B (en) 2015-03-11
CN104073778B (en) 2017-08-25
KR20120048685A (en) 2012-05-15
CN102586760A (en) 2012-07-18
TW200833867A (en) 2008-08-16
WO2008052047A2 (en) 2008-05-02
CN102586760B (en) 2016-07-06
CN104073778A (en) 2014-10-01

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