WO2008052067A3 - Semiconductor grain and oxide layer for photovoltaic cells - Google Patents
Semiconductor grain and oxide layer for photovoltaic cells Download PDFInfo
- Publication number
- WO2008052067A3 WO2008052067A3 PCT/US2007/082405 US2007082405W WO2008052067A3 WO 2008052067 A3 WO2008052067 A3 WO 2008052067A3 US 2007082405 W US2007082405 W US 2007082405W WO 2008052067 A3 WO2008052067 A3 WO 2008052067A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- oxide layer
- semiconductor
- photovoltaic cells
- oxide
- semiconductor grain
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000006096 absorbing agent Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85422606P | 2006-10-24 | 2006-10-24 | |
US60/854,226 | 2006-10-24 | ||
US85796706P | 2006-11-10 | 2006-11-10 | |
US60/857,967 | 2006-11-10 | ||
US85959306P | 2006-11-17 | 2006-11-17 | |
US60/859,593 | 2006-11-17 | ||
US88101307P | 2007-01-17 | 2007-01-17 | |
US60/881,013 | 2007-01-17 | ||
US11/923,036 | 2007-10-24 | ||
US11/923,036 US8426722B2 (en) | 2006-10-24 | 2007-10-24 | Semiconductor grain and oxide layer for photovoltaic cells |
US11/923,070 | 2007-10-24 | ||
US11/923,070 US8373060B2 (en) | 2006-10-24 | 2007-10-24 | Semiconductor grain microstructures for photovoltaic cells |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008052067A2 WO2008052067A2 (en) | 2008-05-02 |
WO2008052067A3 true WO2008052067A3 (en) | 2008-07-17 |
Family
ID=39325395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/082405 WO2008052067A2 (en) | 2006-10-24 | 2007-10-24 | Semiconductor grain and oxide layer for photovoltaic cells |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008052067A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201000693D0 (en) * | 2010-01-15 | 2010-03-03 | Isis Innovation | A solar cell |
WO2011149850A2 (en) * | 2010-05-24 | 2011-12-01 | The Trustees Of Princeton University | Photovoltaic device and method of making same |
GB2484455B (en) * | 2010-09-30 | 2015-04-01 | Univ Bolton | Photovoltaic cells |
LU92800B1 (en) * | 2015-08-14 | 2017-02-14 | Forsman White Glas Kermaicus Sarl | Transparent low thermal conducting low phonon dynamic polycrystalline encapsulated photo-magneto-electric glass crystallization and methods of manufacturing thereof |
CN108376700A (en) * | 2018-02-09 | 2018-08-07 | 沈阳工程学院 | A kind of poly- polyethylene terephthalate substrate heterostructure device and preparation method thereof |
CN114000106A (en) * | 2021-10-15 | 2022-02-01 | 九江学院 | Low-friction-coefficient MoS2Base composite solid lubricating coating and preparation method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050050289A1 (en) * | 2003-08-29 | 2005-03-03 | Raad George B. | Method and apparatus for self-timed data ordering for multi-data rate memories and system incorporating same |
US20050155641A1 (en) * | 2004-01-20 | 2005-07-21 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
US20060008580A1 (en) * | 2000-11-24 | 2006-01-12 | Gabrielle Nelles | Hybrid solar cells with thermal deposited semiconductive oxide layer |
US6995371B2 (en) * | 2003-06-12 | 2006-02-07 | Sirica Corporation | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
US20060086385A1 (en) * | 2004-10-20 | 2006-04-27 | Mitsubishi Heavy Industries, Ltd. | Tandem thin film solar cell |
US7087831B2 (en) * | 1999-09-22 | 2006-08-08 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
-
2007
- 2007-10-24 WO PCT/US2007/082405 patent/WO2008052067A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7087831B2 (en) * | 1999-09-22 | 2006-08-08 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
US20060008580A1 (en) * | 2000-11-24 | 2006-01-12 | Gabrielle Nelles | Hybrid solar cells with thermal deposited semiconductive oxide layer |
US6995371B2 (en) * | 2003-06-12 | 2006-02-07 | Sirica Corporation | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
US20050050289A1 (en) * | 2003-08-29 | 2005-03-03 | Raad George B. | Method and apparatus for self-timed data ordering for multi-data rate memories and system incorporating same |
US20050155641A1 (en) * | 2004-01-20 | 2005-07-21 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
US20060086385A1 (en) * | 2004-10-20 | 2006-04-27 | Mitsubishi Heavy Industries, Ltd. | Tandem thin film solar cell |
Also Published As
Publication number | Publication date |
---|---|
WO2008052067A2 (en) | 2008-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010126572A3 (en) | Bifacial solar cells with back surface reflector | |
WO2010058976A3 (en) | Solar cell and method of manufacturing the same | |
WO2009035746A3 (en) | Multi-junction solar cells | |
WO2008051275A3 (en) | Monolithic integration nonplanar solar cells | |
WO2008052067A3 (en) | Semiconductor grain and oxide layer for photovoltaic cells | |
WO2009114832A3 (en) | Translucent solar cells | |
WO2011087588A3 (en) | Graded electrode technologies for high energy lithium-ion batteries | |
WO2008124154A3 (en) | Photovoltaics on silicon | |
WO2010048543A3 (en) | Thin absorber layer of a photovoltaic device | |
WO2007120175A3 (en) | Apparatus and methods for solar energy conversion using nanoscale cometal structures | |
WO2010044847A3 (en) | Nano-patterned active layers formed by nano-imprint lithography | |
WO2009142677A3 (en) | Quantum dot solar cell with quantum dot bandgap gradients | |
WO2007065039A3 (en) | Nanocrystal solar cells processed from solution | |
WO2011056778A3 (en) | Interlayer for organic solar cells | |
WO2006053032A8 (en) | Thermal process for creation of an in-situ junction layer in cigs | |
WO2009067526A3 (en) | High-efficiency, high current solar cell and solar module | |
WO2008093114A3 (en) | Method of preparing a primary electrode array for photovoltaic electrochemical cell arrays | |
WO2010120233A3 (en) | Multi-junction photovoltaic cell with nanowires | |
WO2010018961A3 (en) | Solar cell and method for manufacturing same | |
WO2008104301A3 (en) | Hybrid organic solar cells with photoactive semiconductor nanoparticles enclosed in surface modifiers | |
WO2012037379A3 (en) | Single and multi-junction light and carrier collection management cells | |
WO2010041262A3 (en) | Solar cells and method of manufacturing thereof | |
EP2341546A3 (en) | Solar cell and manufacturing method thereof | |
WO2008147113A3 (en) | High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same | |
WO2012011023A3 (en) | Dye solar cell with improved stability |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07863478 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07863478 Country of ref document: EP Kind code of ref document: A2 |