WO2008055184A3 - Programming pulse generator for nonvolatile nand-memory - Google Patents

Programming pulse generator for nonvolatile nand-memory Download PDF

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Publication number
WO2008055184A3
WO2008055184A3 PCT/US2007/083063 US2007083063W WO2008055184A3 WO 2008055184 A3 WO2008055184 A3 WO 2008055184A3 US 2007083063 W US2007083063 W US 2007083063W WO 2008055184 A3 WO2008055184 A3 WO 2008055184A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory
pulse generator
programming pulse
word lines
transient state
Prior art date
Application number
PCT/US2007/083063
Other languages
French (fr)
Other versions
WO2008055184A2 (en
Inventor
Stefano Sivero
Mirella Marsella
Mauro Chinosi
Giorgio Bosisio
Original Assignee
Atmel Corp
Stefano Sivero
Mirella Marsella
Mauro Chinosi
Giorgio Bosisio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp, Stefano Sivero, Mirella Marsella, Mauro Chinosi, Giorgio Bosisio filed Critical Atmel Corp
Publication of WO2008055184A2 publication Critical patent/WO2008055184A2/en
Publication of WO2008055184A3 publication Critical patent/WO2008055184A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Abstract

A signal generator circuit is configured to generate program signals for a memory array. The program signals are applied to word lines in the memory array, and have a transient state based on a coupling characteristic of the word lines and selector gates. The transient state is configured to minimize coupling between the word lines and the gates of the selectors so that a state of each selector remains unchanged during the transient state.
PCT/US2007/083063 2006-10-31 2007-10-30 Programming pulse generator for nonvolatile nand-memory WO2008055184A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/554,829 US7505326B2 (en) 2006-10-31 2006-10-31 Programming pulse generator
US11/554,829 2006-10-31

Publications (2)

Publication Number Publication Date
WO2008055184A2 WO2008055184A2 (en) 2008-05-08
WO2008055184A3 true WO2008055184A3 (en) 2008-06-19

Family

ID=39186996

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/083063 WO2008055184A2 (en) 2006-10-31 2007-10-30 Programming pulse generator for nonvolatile nand-memory

Country Status (3)

Country Link
US (1) US7505326B2 (en)
TW (1) TW200830328A (en)
WO (1) WO2008055184A2 (en)

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US9601194B2 (en) * 2014-02-28 2017-03-21 Crossbar, Inc. NAND array comprising parallel transistor and two-terminal switching device
KR102116671B1 (en) * 2014-07-30 2020-06-01 삼성전자주식회사 Nonvolatile memory device and wordline driving method thereof
US10127979B2 (en) 2016-03-11 2018-11-13 Western Digital Technologies, Inc. Memory cell located pulse generator
US10381408B2 (en) 2016-03-24 2019-08-13 Western Digital Technologies, Inc. Method to fabricate discrete vertical transistors
US10679697B2 (en) * 2016-06-17 2020-06-09 Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science Read circuit of storage class memory with a read reference circuit, having same bit line parasitic parameters and same read transmission gate parasitic parameters as memory
US10354724B2 (en) * 2017-09-15 2019-07-16 Sandisk Technologies Llc Methods and apparatus for programming barrier modulated memory cells
CN112509626B (en) * 2020-12-02 2022-07-19 长江存储科技有限责任公司 Nonvolatile memory and control method thereof

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US20050254309A1 (en) * 2004-05-17 2005-11-17 Oh-Suk Kwon Program method of non-volatile memory device

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US20020003722A1 (en) * 2000-05-22 2002-01-10 Kazushige Kanda Nonvolatile semiconductor memory
US20030048662A1 (en) * 2001-09-07 2003-03-13 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory device with improved program inhibition characteristics and method of programming the same
US20050254309A1 (en) * 2004-05-17 2005-11-17 Oh-Suk Kwon Program method of non-volatile memory device

Also Published As

Publication number Publication date
US20080101124A1 (en) 2008-05-01
TW200830328A (en) 2008-07-16
US7505326B2 (en) 2009-03-17
WO2008055184A2 (en) 2008-05-08

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