WO2008060543A3 - P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same - Google Patents

P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same Download PDF

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Publication number
WO2008060543A3
WO2008060543A3 PCT/US2007/023855 US2007023855W WO2008060543A3 WO 2008060543 A3 WO2008060543 A3 WO 2008060543A3 US 2007023855 W US2007023855 W US 2007023855W WO 2008060543 A3 WO2008060543 A3 WO 2008060543A3
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric
forming
diode
silicide
series
Prior art date
Application number
PCT/US2007/023855
Other languages
French (fr)
Other versions
WO2008060543A2 (en
Inventor
S Brad Herner
Original Assignee
Sandisk 3D Llc
S Brad Herner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/560,289 external-priority patent/US8018024B2/en
Priority claimed from US11/560,283 external-priority patent/US7682920B2/en
Application filed by Sandisk 3D Llc, S Brad Herner filed Critical Sandisk 3D Llc
Priority to JP2009537188A priority Critical patent/JP2010510656A/en
Priority to EP07840040A priority patent/EP2092562A2/en
Priority to CN200780042606XA priority patent/CN101553925B/en
Publication of WO2008060543A2 publication Critical patent/WO2008060543A2/en
Publication of WO2008060543A3 publication Critical patent/WO2008060543A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Abstract

A method is described for forming a nonvolatile one-time-programmable memory cell having reduced programming voltage. A contiguous p-i-n diode is paired with a dielectric rupture antifuse formed of a high-dielectric-constant material, having a dielectric constant greater than about 8. In preferred embodiments, the high-dielectric-constant material is formed by atomic layer deposition. The diode is preferably formed of deposited low- defect semiconductor material, crystallized in contact with a suicide. A monolithic three dimensional memory array of such cells can be formed in stacked memory levels above the wafer substrate.
PCT/US2007/023855 2006-11-15 2007-11-13 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same WO2008060543A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009537188A JP2010510656A (en) 2006-11-15 2007-11-13 P-IN diode crystallized adjacent to silicide in series with dielectric antifuse and method of forming the same
EP07840040A EP2092562A2 (en) 2006-11-15 2007-11-13 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same
CN200780042606XA CN101553925B (en) 2006-11-15 2007-11-13 P-I-N diode crystallized adjacent to silicide in series with a dielectric antifuse and methods of forming the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/560,289 US8018024B2 (en) 2003-12-03 2006-11-15 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
US11/560,289 2006-11-15
US11/560,283 US7682920B2 (en) 2003-12-03 2006-11-15 Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
US11/560,283 2006-11-15

Publications (2)

Publication Number Publication Date
WO2008060543A2 WO2008060543A2 (en) 2008-05-22
WO2008060543A3 true WO2008060543A3 (en) 2008-07-24

Family

ID=39301054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/023855 WO2008060543A2 (en) 2006-11-15 2007-11-13 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse and methods of forming the same

Country Status (4)

Country Link
EP (1) EP2092562A2 (en)
KR (1) KR20090089320A (en)
CN (1) CN101553925B (en)
WO (1) WO2008060543A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5191803B2 (en) * 2008-05-29 2013-05-08 株式会社東芝 Method for manufacturing nonvolatile memory device
KR20100001260A (en) * 2008-06-26 2010-01-06 삼성전자주식회사 Non-volatile memory device and method of fabricating the same
JP5702725B2 (en) * 2008-10-08 2015-04-15 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガンＴｈｅ Ｒｅｇｅｎｔｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｍｉｃｈｉｇａｎ Silicon-based nanoscale resistor with adjustable resistance
JP2012506621A (en) * 2008-10-20 2012-03-15 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン Silicon nanoscale crossbar memory
CN102315115A (en) * 2010-06-30 2012-01-11 中国科学院微电子研究所 Dry-process etching method for HfSiAlON high-K dielectric
KR20120077505A (en) * 2010-12-30 2012-07-10 삼성전자주식회사 Nonvolatile semiconductor memory device and the method of fabricating the same
CN103367159B (en) * 2012-04-09 2016-06-29 中芯国际集成电路制造(上海)有限公司 The forming method of semiconductor structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element
US20050121742A1 (en) * 2003-12-03 2005-06-09 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
US20060199361A1 (en) * 2004-10-21 2006-09-07 Chia-Hua Ho Manufacturing method of one-time programmable read only memory
US20060250837A1 (en) * 2005-05-09 2006-11-09 Sandisk 3D, Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
WO2007005273A1 (en) * 2005-07-01 2007-01-11 Sandisk 3D Llc Memory cell with high-k antifuse for reverse bias programming
US20070069217A1 (en) * 2003-12-03 2007-03-29 Herner S B P-i-n diode crystallized adjacent to a silicide in series with a dielectric anitfuse

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US20050226067A1 (en) * 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US20060250836A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element
US20050121742A1 (en) * 2003-12-03 2005-06-09 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
US20070069217A1 (en) * 2003-12-03 2007-03-29 Herner S B P-i-n diode crystallized adjacent to a silicide in series with a dielectric anitfuse
US20060199361A1 (en) * 2004-10-21 2006-09-07 Chia-Hua Ho Manufacturing method of one-time programmable read only memory
US20060250837A1 (en) * 2005-05-09 2006-11-09 Sandisk 3D, Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
WO2007005273A1 (en) * 2005-07-01 2007-01-11 Sandisk 3D Llc Memory cell with high-k antifuse for reverse bias programming

Also Published As

Publication number Publication date
KR20090089320A (en) 2009-08-21
EP2092562A2 (en) 2009-08-26
WO2008060543A2 (en) 2008-05-22
CN101553925A (en) 2009-10-07
CN101553925B (en) 2013-08-14

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