WO2008065574A3 - A magnetic field sensor circuit - Google Patents

A magnetic field sensor circuit Download PDF

Info

Publication number
WO2008065574A3
WO2008065574A3 PCT/IB2007/054705 IB2007054705W WO2008065574A3 WO 2008065574 A3 WO2008065574 A3 WO 2008065574A3 IB 2007054705 W IB2007054705 W IB 2007054705W WO 2008065574 A3 WO2008065574 A3 WO 2008065574A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic field
flipping
signal
sense signal
magneto
Prior art date
Application number
PCT/IB2007/054705
Other languages
French (fr)
Other versions
WO2008065574A2 (en
Inventor
Haris Duric
Teunis Jan Ikkink
Hans Marc Bert Boeve
Original Assignee
Nxp Bv
Haris Duric
Teunis Jan Ikkink
Hans Marc Bert Boeve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv, Haris Duric, Teunis Jan Ikkink, Hans Marc Bert Boeve filed Critical Nxp Bv
Priority to US12/516,173 priority Critical patent/US7818890B2/en
Priority to EP07849186A priority patent/EP2089732A2/en
Priority to CN2007800439356A priority patent/CN101568847B/en
Publication of WO2008065574A2 publication Critical patent/WO2008065574A2/en
Publication of WO2008065574A3 publication Critical patent/WO2008065574A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors

Abstract

A magnetic field sensor circuit comprises a first magneto -resistive sensor (Rx) which senses a first magnetic field component in a first direction to supply a first sense signal (Vx). A first flipping coil (FC1) applies a first flipping magnetic field with a periodically changing polarity to the first magneto -resistive sensor (Rx) to cause the first sense signal (Vx) to have alternating different levels synchronized with the first flipping magnetic field. A second magneto -resistive sensor (Ry) senses a second magnetic field component in a second direction different than the first direction to supply a second sense signal (Vy). A second flipping coil (FC2) applies a second flipping magnetic field with a periodically changing polarity to the second magneto -resistive sensor (Ry) to cause the second sense signal (Vy) to have an alternating different levels synchronized with the second flipping magnetic field. The first flipping magnetic field and the second flipping magnetic field have a phase shift. A differential amplifier (AMPl) receives the first sense signal (Vx) and the second sense signal (Vy) to obtain a difference signal (Vd). A first synchronous demodulator (DEM1) receives the difference signal (Vd) and a first switching signal (Q1) being phase locked to the alternating different levels of the first sense signal (Vx) to supply a first output signal (Vox) indicating the first magnetic field component. A second synchronous demodulator (DEM2) receives the difference signal (Vd) and a second switching signal (Q2) being phase locked to the alternating different levels of the second sense signal (Vy) to supply a second output signal (Voy) indicating the second magnetic field component.
PCT/IB2007/054705 2006-11-27 2007-11-20 A magnetic field sensor circuit WO2008065574A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/516,173 US7818890B2 (en) 2006-11-27 2007-11-20 Magnetic field sensor circuit
EP07849186A EP2089732A2 (en) 2006-11-27 2007-11-20 A magnetic field sensor circuit
CN2007800439356A CN101568847B (en) 2006-11-27 2007-11-20 A magnetic field sensor circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06124809 2006-11-27
EP06124809.2 2006-11-27

Publications (2)

Publication Number Publication Date
WO2008065574A2 WO2008065574A2 (en) 2008-06-05
WO2008065574A3 true WO2008065574A3 (en) 2008-08-21

Family

ID=39467836

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/054705 WO2008065574A2 (en) 2006-11-27 2007-11-20 A magnetic field sensor circuit

Country Status (4)

Country Link
US (1) US7818890B2 (en)
EP (1) EP2089732A2 (en)
CN (1) CN101568847B (en)
WO (1) WO2008065574A2 (en)

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Also Published As

Publication number Publication date
CN101568847B (en) 2012-02-01
CN101568847A (en) 2009-10-28
US20100053789A1 (en) 2010-03-04
WO2008065574A2 (en) 2008-06-05
EP2089732A2 (en) 2009-08-19
US7818890B2 (en) 2010-10-26

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