WO2008098363A8 - Non-volatile memory with dynamic multi-mode operation - Google Patents

Non-volatile memory with dynamic multi-mode operation

Info

Publication number
WO2008098363A8
WO2008098363A8 PCT/CA2008/000285 CA2008000285W WO2008098363A8 WO 2008098363 A8 WO2008098363 A8 WO 2008098363A8 CA 2008000285 W CA2008000285 W CA 2008000285W WO 2008098363 A8 WO2008098363 A8 WO 2008098363A8
Authority
WO
WIPO (PCT)
Prior art keywords
data
page
subdivision
mode
memory device
Prior art date
Application number
PCT/CA2008/000285
Other languages
French (fr)
Other versions
WO2008098363A1 (en
Inventor
Jin-Ki Kim
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Priority to CN200880005252.6A priority Critical patent/CN101617372B/en
Priority to KR1020137033288A priority patent/KR20140013079A/en
Priority to JP2009549749A priority patent/JP5421127B2/en
Priority to ES08714608.0T priority patent/ES2477493T3/en
Priority to KR1020147033804A priority patent/KR20140146229A/en
Priority to CA2675565A priority patent/CA2675565C/en
Priority to KR1020167008455A priority patent/KR20160043121A/en
Priority to KR1020137020922A priority patent/KR20130098439A/en
Priority to EP08714608.0A priority patent/EP2126923B1/en
Publication of WO2008098363A1 publication Critical patent/WO2008098363A1/en
Publication of WO2008098363A8 publication Critical patent/WO2008098363A8/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7204—Capacity control, e.g. partitioning, end-of-life degradation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7206—Reconfiguration of flash memory system
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"

Abstract

A method and system for extending the life span of a flash memory device. The flash memory device is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode, such that both SBC data and MBC data co-exist within the same memory array. One or more tag bits stored in each page of the memory is used to indicate the type of storage mode used for storing the data in the corresponding subdivision, where a subdivision can be a bank, block or page. A controller monitors the number of program-erase cycles corresponding to each page for selectively changing the storage mode in order to maximize lifespan of any subdivision of the multi-mode flash memory device.
PCT/CA2008/000285 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation WO2008098363A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CN200880005252.6A CN101617372B (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation
KR1020137033288A KR20140013079A (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation
JP2009549749A JP5421127B2 (en) 2007-02-16 2008-02-14 Nonvolatile memory with dynamic multimode operation
ES08714608.0T ES2477493T3 (en) 2007-02-16 2008-02-14 Nonvolatile memory with dynamic multimode operation
KR1020147033804A KR20140146229A (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation
CA2675565A CA2675565C (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation
KR1020167008455A KR20160043121A (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation
KR1020137020922A KR20130098439A (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation
EP08714608.0A EP2126923B1 (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US89025207P 2007-02-16 2007-02-16
US60/890,252 2007-02-16
US11/829,410 US7646636B2 (en) 2007-02-16 2007-07-27 Non-volatile memory with dynamic multi-mode operation
US11/829,410 2007-07-27

Publications (2)

Publication Number Publication Date
WO2008098363A1 WO2008098363A1 (en) 2008-08-21
WO2008098363A8 true WO2008098363A8 (en) 2008-11-06

Family

ID=39689589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2008/000285 WO2008098363A1 (en) 2007-02-16 2008-02-14 Non-volatile memory with dynamic multi-mode operation

Country Status (9)

Country Link
US (5) US7646636B2 (en)
EP (2) EP2490224A3 (en)
JP (3) JP5421127B2 (en)
KR (6) KR20160043121A (en)
CN (1) CN101617372B (en)
CA (1) CA2675565C (en)
ES (1) ES2477493T3 (en)
TW (1) TWI449049B (en)
WO (1) WO2008098363A1 (en)

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