WO2008107941A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- WO2008107941A1 WO2008107941A1 PCT/JP2007/053884 JP2007053884W WO2008107941A1 WO 2008107941 A1 WO2008107941 A1 WO 2008107941A1 JP 2007053884 W JP2007053884 W JP 2007053884W WO 2008107941 A1 WO2008107941 A1 WO 2008107941A1
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- WIPO (PCT)
- Prior art keywords
- oxide film
- nickel oxide
- electrode
- producing
- same
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/053884 WO2008107941A1 (ja) | 2007-03-01 | 2007-03-01 | 半導体装置及びその製造方法 |
KR1020097017093A KR101054321B1 (ko) | 2007-03-01 | 2007-03-01 | 반도체 장치 및 그 제조 방법 |
JP2009502354A JP5152173B2 (ja) | 2007-03-01 | 2007-03-01 | 半導体装置及びその製造方法 |
US12/546,089 US7924138B2 (en) | 2007-03-01 | 2009-08-24 | Semiconductor device and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/053884 WO2008107941A1 (ja) | 2007-03-01 | 2007-03-01 | 半導体装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/546,089 Continuation US7924138B2 (en) | 2007-03-01 | 2009-08-24 | Semiconductor device and manufacturing method of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008107941A1 true WO2008107941A1 (ja) | 2008-09-12 |
Family
ID=39737846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/053884 WO2008107941A1 (ja) | 2007-03-01 | 2007-03-01 | 半導体装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7924138B2 (ja) |
JP (1) | JP5152173B2 (ja) |
KR (1) | KR101054321B1 (ja) |
WO (1) | WO2008107941A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009212380A (ja) * | 2008-03-05 | 2009-09-17 | Fujitsu Ltd | 抵抗変化型メモリおよびその作製方法 |
WO2009141857A1 (ja) * | 2008-05-22 | 2009-11-26 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
WO2010067585A1 (ja) * | 2008-12-10 | 2010-06-17 | パナソニック株式会社 | 抵抗変化素子およびそれを用いた不揮発性半導体記憶装置 |
WO2010087000A1 (ja) * | 2009-01-30 | 2010-08-05 | 株式会社 東芝 | 不揮発性記憶装置の製造方法 |
EP2259267A1 (en) * | 2009-06-02 | 2010-12-08 | Imec | Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof |
US9281477B2 (en) | 2011-06-10 | 2016-03-08 | Ulvac, Inc. | Resistance change element and method for producing the same |
Families Citing this family (76)
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KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
US8071972B2 (en) | 2008-10-20 | 2011-12-06 | The Regents Of The University Of Michigan | Silicon based nanoscale crossbar memory |
KR101055748B1 (ko) * | 2009-10-23 | 2011-08-11 | 주식회사 하이닉스반도체 | 저항 변화 장치 및 그 제조방법 |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US9012307B2 (en) | 2010-07-13 | 2015-04-21 | Crossbar, Inc. | Two terminal resistive switching device structure and method of fabricating |
US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
US8441835B2 (en) | 2010-06-11 | 2013-05-14 | Crossbar, Inc. | Interface control for improved switching in RRAM |
CN103081093B (zh) | 2010-06-11 | 2015-06-03 | 科洛斯巴股份有限公司 | 存储器件的柱结构以及方法 |
US8351241B2 (en) | 2010-06-24 | 2013-01-08 | The Regents Of The University Of Michigan | Rectification element and method for resistive switching for non volatile memory device |
US8241944B2 (en) * | 2010-07-02 | 2012-08-14 | Micron Technology, Inc. | Resistive RAM devices and methods |
US8374018B2 (en) | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
US8947908B2 (en) | 2010-11-04 | 2015-02-03 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8168506B2 (en) | 2010-07-13 | 2012-05-01 | Crossbar, Inc. | On/off ratio for non-volatile memory device and method |
US8467227B1 (en) | 2010-11-04 | 2013-06-18 | Crossbar, Inc. | Hetero resistive switching material layer in RRAM device and method |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US9401475B1 (en) | 2010-08-23 | 2016-07-26 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8889521B1 (en) | 2012-09-14 | 2014-11-18 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
US8404553B2 (en) | 2010-08-23 | 2013-03-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device and method |
US8391049B2 (en) | 2010-09-29 | 2013-03-05 | Crossbar, Inc. | Resistor structure for a non-volatile memory device and method |
US8558212B2 (en) | 2010-09-29 | 2013-10-15 | Crossbar, Inc. | Conductive path in switching material in a resistive random access memory device and control |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8088688B1 (en) | 2010-11-05 | 2012-01-03 | Crossbar, Inc. | p+ polysilicon material on aluminum for non-volatile memory device and method |
US8930174B2 (en) | 2010-12-28 | 2015-01-06 | Crossbar, Inc. | Modeling technique for resistive random access memory (RRAM) cells |
US8791010B1 (en) | 2010-12-31 | 2014-07-29 | Crossbar, Inc. | Silver interconnects for stacked non-volatile memory device and method |
US8815696B1 (en) | 2010-12-31 | 2014-08-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device using via-fill and etchback technique |
US9153623B1 (en) | 2010-12-31 | 2015-10-06 | Crossbar, Inc. | Thin film transistor steering element for a non-volatile memory device |
US8450710B2 (en) | 2011-05-27 | 2013-05-28 | Crossbar, Inc. | Low temperature p+ silicon junction material for a non-volatile memory device |
US8394670B2 (en) | 2011-05-31 | 2013-03-12 | Crossbar, Inc. | Vertical diodes for non-volatile memory device |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US8659929B2 (en) | 2011-06-30 | 2014-02-25 | Crossbar, Inc. | Amorphous silicon RRAM with non-linear device and operation |
US9252191B2 (en) | 2011-07-22 | 2016-02-02 | Crossbar, Inc. | Seed layer for a p+ silicon germanium material for a non-volatile memory device and method |
US10056907B1 (en) | 2011-07-29 | 2018-08-21 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
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US8716098B1 (en) | 2012-03-09 | 2014-05-06 | Crossbar, Inc. | Selective removal method and structure of silver in resistive switching device for a non-volatile memory device |
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US9460788B2 (en) | 2014-07-09 | 2016-10-04 | Crossbar, Inc. | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
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JP2006179926A (ja) * | 2004-12-21 | 2006-07-06 | Samsung Electronics Co Ltd | 二種の抵抗体を含む不揮発性メモリ素子 |
WO2007013174A1 (ja) * | 2005-07-29 | 2007-02-01 | Fujitsu Limited | 抵抗記憶素子及び不揮発性半導体記憶装置 |
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JP2004241396A (ja) | 2002-02-07 | 2004-08-26 | Sharp Corp | 抵抗変化素子の製造方法および不揮発性抵抗変化メモリデバイスの製造方法、並びに不揮発性抵抗変化メモリデバイス |
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KR100773537B1 (ko) | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
KR101051704B1 (ko) * | 2004-04-28 | 2011-07-25 | 삼성전자주식회사 | 저항 구배를 지닌 다층막을 이용한 메모리 소자 |
KR100593448B1 (ko) | 2004-09-10 | 2006-06-28 | 삼성전자주식회사 | 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들 |
KR100669854B1 (ko) * | 2005-07-05 | 2007-01-16 | 삼성전자주식회사 | 단위 셀 구조물과 그 제조 방법 및 이를 갖는 비휘발성메모리 소자 및 그 제조 방법 |
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- 2007-03-01 JP JP2009502354A patent/JP5152173B2/ja not_active Expired - Fee Related
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- 2007-03-01 WO PCT/JP2007/053884 patent/WO2008107941A1/ja active Application Filing
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2009
- 2009-08-24 US US12/546,089 patent/US7924138B2/en not_active Expired - Fee Related
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Cited By (13)
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JP2009212380A (ja) * | 2008-03-05 | 2009-09-17 | Fujitsu Ltd | 抵抗変化型メモリおよびその作製方法 |
US8233311B2 (en) | 2008-05-22 | 2012-07-31 | Panasonic Corporation | Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias |
WO2009141857A1 (ja) * | 2008-05-22 | 2009-11-26 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
US8472238B2 (en) | 2008-05-22 | 2013-06-25 | Panasonic Corporation | Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect |
US8094485B2 (en) | 2008-05-22 | 2012-01-10 | Panasonic Corporation | Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect |
WO2010067585A1 (ja) * | 2008-12-10 | 2010-06-17 | パナソニック株式会社 | 抵抗変化素子およびそれを用いた不揮発性半導体記憶装置 |
US8350245B2 (en) | 2008-12-10 | 2013-01-08 | Panasonic Corporation | Variable resistance element and nonvolatile semiconductor memory device using the same |
JP4937413B2 (ja) * | 2008-12-10 | 2012-05-23 | パナソニック株式会社 | 抵抗変化素子およびそれを用いた不揮発性半導体記憶装置 |
WO2010087000A1 (ja) * | 2009-01-30 | 2010-08-05 | 株式会社 東芝 | 不揮発性記憶装置の製造方法 |
US8310857B2 (en) | 2009-06-02 | 2012-11-13 | Imec | Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof |
JP2011009739A (ja) * | 2009-06-02 | 2011-01-13 | Imec | 低電力で動作可能なニッケル酸化層を含む抵抗スイッチングメモリセルの製造方法およびそのメモリセル |
EP2259267A1 (en) * | 2009-06-02 | 2010-12-08 | Imec | Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof |
US9281477B2 (en) | 2011-06-10 | 2016-03-08 | Ulvac, Inc. | Resistance change element and method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
US20090309690A1 (en) | 2009-12-17 |
KR101054321B1 (ko) | 2011-08-05 |
US7924138B2 (en) | 2011-04-12 |
KR20100004968A (ko) | 2010-01-13 |
JP5152173B2 (ja) | 2013-02-27 |
JPWO2008107941A1 (ja) | 2010-06-03 |
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