WO2008107975A1 - 半導体集積素子 - Google Patents

半導体集積素子 Download PDF

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Publication number
WO2008107975A1
WO2008107975A1 PCT/JP2007/054330 JP2007054330W WO2008107975A1 WO 2008107975 A1 WO2008107975 A1 WO 2008107975A1 JP 2007054330 W JP2007054330 W JP 2007054330W WO 2008107975 A1 WO2008107975 A1 WO 2008107975A1
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WO
WIPO (PCT)
Prior art keywords
wavelength
waveguide portion
width
gain
variable
Prior art date
Application number
PCT/JP2007/054330
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English (en)
French (fr)
Inventor
Kazumasa Takabayashi
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Fujitsu Limited
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Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2009502392A priority Critical patent/JP5365510B2/ja
Priority to PCT/JP2007/054330 priority patent/WO2008107975A1/ja
Publication of WO2008107975A1 publication Critical patent/WO2008107975A1/ja
Priority to US12/545,422 priority patent/US7873082B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1221—Detuning between Bragg wavelength and gain maximum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　半導体集積素子を、同一半導体基板（４）上に発振波長帯が異なる複数の波長可変レーザ（ＬＤ１～ＬＤ８）を備えるものとし、各波長可変レーザ（ＬＤ１～ＬＤ８）が、電流注入によって利得を発生しうる利得導波路部（１Ａ）と、電流注入又は電圧印加によって発振波長を制御しうる波長制御導波路部（１Ｂ）とを光軸方向に交互に有する光導波路（１）と、光導波路（１）の全長にわたって光導波路（１）に沿って設けられる回折格子とを備えるものとし、複数の波長可変レーザ（ＬＤ１～ＬＤ８）の中の一の波長可変レーザの波長制御導波路部（１Ｂ）の幅を利得導波路部（１Ａ）の幅で割った値が、一の波長可変レーザの発振波長帯に対して短波長側で発振する他の波長可変レーザの波長制御導波路部（１Ｂ）の幅を利得導波路部（１Ａ）の幅で割った値よりも大きくなるようにする。
PCT/JP2007/054330 2007-03-06 2007-03-06 半導体集積素子 WO2008107975A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009502392A JP5365510B2 (ja) 2007-03-06 2007-03-06 半導体集積素子
PCT/JP2007/054330 WO2008107975A1 (ja) 2007-03-06 2007-03-06 半導体集積素子
US12/545,422 US7873082B2 (en) 2007-03-06 2009-08-21 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/054330 WO2008107975A1 (ja) 2007-03-06 2007-03-06 半導体集積素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/545,422 Continuation US7873082B2 (en) 2007-03-06 2009-08-21 Semiconductor integrated device

Publications (1)

Publication Number Publication Date
WO2008107975A1 true WO2008107975A1 (ja) 2008-09-12

Family

ID=39737880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/054330 WO2008107975A1 (ja) 2007-03-06 2007-03-06 半導体集積素子

Country Status (3)

Country Link
US (1) US7873082B2 (ja)
JP (1) JP5365510B2 (ja)
WO (1) WO2008107975A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228564A (ja) * 2016-06-20 2017-12-28 日本電信電話株式会社 波長可変半導体レーザアレイ及び波長可変半導体レーザアレイの制御方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8184671B2 (en) * 2006-10-31 2012-05-22 Anritsu Corporation Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser
JP5447799B2 (ja) * 2009-06-18 2014-03-19 セイコーエプソン株式会社 発光装置およびその駆動方法、並びに、プロジェクター
DE102010020625B4 (de) * 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
JP5499903B2 (ja) * 2010-05-27 2014-05-21 住友電気工業株式会社 半導体レーザ
JP2012169499A (ja) * 2011-02-15 2012-09-06 Furukawa Electric Co Ltd:The 半導体レーザモジュール
US8913897B2 (en) * 2011-04-29 2014-12-16 Huawei Technologies Co., Ltd. Laser diode, method for manufacturing laser diode and passive optical network system
US9025241B2 (en) * 2011-10-14 2015-05-05 Kotura, Inc. Gain medium providing laser and amplifier functionality to optical device
JP2018032793A (ja) * 2016-08-25 2018-03-01 富士ゼロックス株式会社 発光素子アレイ、光学デバイス、及び画像形成装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH1090508A (ja) * 1996-09-11 1998-04-10 Sumitomo Electric Ind Ltd 回折格子の形成方法および光導波路
JP2002006352A (ja) * 2000-06-22 2002-01-09 Fujitsu Ltd 半導体可変波長変換装置
JP2003315581A (ja) * 2002-04-24 2003-11-06 Sumitomo Electric Ind Ltd 光導波路、多波長光源、及び波長可変光源
JP2006295103A (ja) * 2005-03-17 2006-10-26 Fujitsu Ltd 波長可変レーザ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1090508A (ja) * 1996-09-11 1998-04-10 Sumitomo Electric Ind Ltd 回折格子の形成方法および光導波路
JP2002006352A (ja) * 2000-06-22 2002-01-09 Fujitsu Ltd 半導体可変波長変換装置
JP2003315581A (ja) * 2002-04-24 2003-11-06 Sumitomo Electric Ind Ltd 光導波路、多波長光源、及び波長可変光源
JP2006295103A (ja) * 2005-03-17 2006-10-26 Fujitsu Ltd 波長可変レーザ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017228564A (ja) * 2016-06-20 2017-12-28 日本電信電話株式会社 波長可変半導体レーザアレイ及び波長可変半導体レーザアレイの制御方法

Also Published As

Publication number Publication date
JPWO2008107975A1 (ja) 2010-06-10
US20090310630A1 (en) 2009-12-17
JP5365510B2 (ja) 2013-12-11
US7873082B2 (en) 2011-01-18

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