WO2008111125A1 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
WO2008111125A1
WO2008111125A1 PCT/JP2007/000212 JP2007000212W WO2008111125A1 WO 2008111125 A1 WO2008111125 A1 WO 2008111125A1 JP 2007000212 W JP2007000212 W JP 2007000212W WO 2008111125 A1 WO2008111125 A1 WO 2008111125A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
producing
same
insulating film
copper
Prior art date
Application number
PCT/JP2007/000212
Other languages
English (en)
French (fr)
Inventor
Shiro Ozaki
Yoshihiro Nakata
Yasushi Kobayashi
Ei Yano
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to KR1020097019958A priority Critical patent/KR101119649B1/ko
Priority to EP07736871.0A priority patent/EP2124250A4/en
Priority to JP2009503757A priority patent/JP5071474B2/ja
Priority to CN2007800521327A priority patent/CN101627463B/zh
Priority to PCT/JP2007/000212 priority patent/WO2008111125A1/ja
Publication of WO2008111125A1 publication Critical patent/WO2008111125A1/ja
Priority to US12/544,371 priority patent/US8378489B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Abstract

　本発明に係る半導体装置は、銅配線層を有し、その銅配線層上に、アンモニアと有機塩基物質とからなる群から選ばれた少なくとも一つの物質を含む組成物を塗布してなる層と、その上にケイ素を含有する絶縁膜とを有する。配線材料である銅との密着性に優れた絶縁膜を有する半導体装置が得られる。
PCT/JP2007/000212 2007-03-13 2007-03-13 半導体装置および半導体装置の製造方法 WO2008111125A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020097019958A KR101119649B1 (ko) 2007-03-13 2007-03-13 반도체 장치 및 반도체 장치의 제조 방법
EP07736871.0A EP2124250A4 (en) 2007-03-13 2007-03-13 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
JP2009503757A JP5071474B2 (ja) 2007-03-13 2007-03-13 半導体装置および半導体装置の製造方法
CN2007800521327A CN101627463B (zh) 2007-03-13 2007-03-13 半导体装置和半导体装置的制造方法
PCT/JP2007/000212 WO2008111125A1 (ja) 2007-03-13 2007-03-13 半導体装置および半導体装置の製造方法
US12/544,371 US8378489B2 (en) 2007-03-13 2009-08-20 Semiconductor device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/000212 WO2008111125A1 (ja) 2007-03-13 2007-03-13 半導体装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/544,371 Continuation US8378489B2 (en) 2007-03-13 2009-08-20 Semiconductor device and manufacturing method therefor

Publications (1)

Publication Number Publication Date
WO2008111125A1 true WO2008111125A1 (ja) 2008-09-18

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Application Number Title Priority Date Filing Date
PCT/JP2007/000212 WO2008111125A1 (ja) 2007-03-13 2007-03-13 半導体装置および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US8378489B2 (ja)
EP (1) EP2124250A4 (ja)
JP (1) JP5071474B2 (ja)
KR (1) KR101119649B1 (ja)
CN (1) CN101627463B (ja)
WO (1) WO2008111125A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5476185B2 (ja) 2010-03-31 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5795221B2 (ja) * 2011-09-26 2015-10-14 株式会社東芝 パターン形成方法
JP6540361B2 (ja) 2015-08-18 2019-07-10 富士通株式会社 半導体装置及びその製造方法

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JP2001207170A (ja) * 2000-01-25 2001-07-31 Nec Corp 防食剤
WO2001071789A1 (fr) * 2000-03-21 2001-09-27 Wako Pure Chemical Industries, Ltd. Agent de nettoyage de tranche de semi-conducteur et procede de nettoyage
JP2001319913A (ja) * 2000-03-03 2001-11-16 Nec Corp 防食処理原液
JP2002203857A (ja) * 2000-12-27 2002-07-19 Toshiba Corp 半導体装置およびその製造方法
JP2006179599A (ja) * 2004-12-21 2006-07-06 Toshiba Corp 半導体装置およびその製造方法
JP2006261268A (ja) * 2005-03-16 2006-09-28 Fujitsu Ltd 半導体装置及びその製造方法
JP2006303179A (ja) 2005-04-20 2006-11-02 Fujitsu Ltd 埋込導電体の形成方法
JP2006351877A (ja) * 2005-06-16 2006-12-28 Fujitsu Ltd 積層体の製造方法、半導体デバイスおよび半導体デバイスの製造方法

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JP2001207170A (ja) * 2000-01-25 2001-07-31 Nec Corp 防食剤
JP2001319913A (ja) * 2000-03-03 2001-11-16 Nec Corp 防食処理原液
WO2001071789A1 (fr) * 2000-03-21 2001-09-27 Wako Pure Chemical Industries, Ltd. Agent de nettoyage de tranche de semi-conducteur et procede de nettoyage
JP2002203857A (ja) * 2000-12-27 2002-07-19 Toshiba Corp 半導体装置およびその製造方法
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JP2006351877A (ja) * 2005-06-16 2006-12-28 Fujitsu Ltd 積層体の製造方法、半導体デバイスおよび半導体デバイスの製造方法

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Title
See also references of EP2124250A4

Also Published As

Publication number Publication date
CN101627463A (zh) 2010-01-13
KR101119649B1 (ko) 2012-03-14
EP2124250A1 (en) 2009-11-25
KR20100005046A (ko) 2010-01-13
US8378489B2 (en) 2013-02-19
CN101627463B (zh) 2012-05-30
US20090309221A1 (en) 2009-12-17
JPWO2008111125A1 (ja) 2010-06-24
EP2124250A4 (en) 2014-06-25
JP5071474B2 (ja) 2012-11-14

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