WO2008140119A1 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
WO2008140119A1
WO2008140119A1 PCT/JP2008/058976 JP2008058976W WO2008140119A1 WO 2008140119 A1 WO2008140119 A1 WO 2008140119A1 JP 2008058976 W JP2008058976 W JP 2008058976W WO 2008140119 A1 WO2008140119 A1 WO 2008140119A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
developing solution
undergoes
solubility
resist pattern
Prior art date
Application number
PCT/JP2008/058976
Other languages
English (en)
French (fr)
Inventor
Hideaki Tsubaki
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to US12/600,038 priority Critical patent/US7985534B2/en
Publication of WO2008140119A1 publication Critical patent/WO2008140119A1/ja
Priority to US13/162,056 priority patent/US8476001B2/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Abstract

（ア）酸の作用により極性が増大する樹脂を含有し、活性光線又は放射線の照射により、ポジ型現像液に対する溶解度が増大し、ネガ型現像液に対する溶解度が減少する、レジスト組成物を塗布する工程、（イ）露光工程、（ウ）ネガ型現像液を用いて現像を行い、レジストパターンを形成する工程、及び（エ）該レジストパターンに架橋層形成材料を作用させ、該レジストパターンを構成する樹脂と架橋層形成材料とを架橋させ、架橋層を形成する工程、を含むことを特徴とするパターン形成方法。本発明により、トレンチパターンやホールパターンの寸法を実効的に微細化したパターンをスカムを発生させずに形成する方法が提供される。
PCT/JP2008/058976 2007-05-15 2008-05-15 パターン形成方法 WO2008140119A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/600,038 US7985534B2 (en) 2007-05-15 2008-05-15 Pattern forming method
US13/162,056 US8476001B2 (en) 2007-05-15 2011-06-16 Pattern forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007129521 2007-05-15
JP2007-129521 2007-05-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/600,038 A-371-Of-International US7985534B2 (en) 2007-05-15 2008-05-15 Pattern forming method
US13/162,056 Continuation-In-Part US8476001B2 (en) 2007-05-15 2011-06-16 Pattern forming method

Publications (1)

Publication Number Publication Date
WO2008140119A1 true WO2008140119A1 (ja) 2008-11-20

Family

ID=40002306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058976 WO2008140119A1 (ja) 2007-05-15 2008-05-15 パターン形成方法

Country Status (4)

Country Link
US (1) US7985534B2 (ja)
JP (1) JP4558064B2 (ja)
KR (1) KR100989567B1 (ja)
WO (1) WO2008140119A1 (ja)

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EP1939691A3 (en) * 2006-12-25 2011-02-16 FUJIFILM Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US7998655B2 (en) 2007-06-12 2011-08-16 Fujifilm Corporation Method of forming patterns
US8017304B2 (en) 2007-04-13 2011-09-13 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8017298B2 (en) 2007-06-12 2011-09-13 Fujifilm Corporation Method of forming patterns
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
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US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US9046782B2 (en) 2007-06-12 2015-06-02 Fujifilm Corporation Resist composition for negative tone development and pattern forming method using the same
JP2016091008A (ja) * 2014-10-30 2016-05-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP2016091007A (ja) * 2014-10-30 2016-05-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
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