WO2008144762A3 - Organic electrodes and electronic devices - Google Patents

Organic electrodes and electronic devices Download PDF

Info

Publication number
WO2008144762A3
WO2008144762A3 PCT/US2008/064431 US2008064431W WO2008144762A3 WO 2008144762 A3 WO2008144762 A3 WO 2008144762A3 US 2008064431 W US2008064431 W US 2008064431W WO 2008144762 A3 WO2008144762 A3 WO 2008144762A3
Authority
WO
WIPO (PCT)
Prior art keywords
gate
gate material
drain
source
electronic devices
Prior art date
Application number
PCT/US2008/064431
Other languages
French (fr)
Other versions
WO2008144762A2 (en
Inventor
Mathew K Mattai
Thomas N Jackson
Original Assignee
Plextronics Inc
Univ Pennsylvania
Mathew K Mattai
Thomas N Jackson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plextronics Inc, Univ Pennsylvania, Mathew K Mattai, Thomas N Jackson filed Critical Plextronics Inc
Publication of WO2008144762A2 publication Critical patent/WO2008144762A2/en
Publication of WO2008144762A3 publication Critical patent/WO2008144762A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Abstract

A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one first gate material disposed on the gate insulator second side; wherein the first gate material does not substantially overlap with the source or the drain so as to minimize parasitic capacitance, the transistor further comprises a second gate material disposed away from the second side so that the first gate material is between the gate insulator and the second gate material. The second gate material can comprise a metal. The second gate material can have a higher conductivity than the first gate material. The second gate material can substantially overlap with the source or the drain. The transistor can be adapted for a bottom-gate configuration or a top-gate configuration. Applications included printed electronics.
PCT/US2008/064431 2007-05-21 2008-05-21 Organic electrodes and electronic devices WO2008144762A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93935207P 2007-05-21 2007-05-21
US60/939,352 2007-05-21

Publications (2)

Publication Number Publication Date
WO2008144762A2 WO2008144762A2 (en) 2008-11-27
WO2008144762A3 true WO2008144762A3 (en) 2009-03-19

Family

ID=39615642

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/064431 WO2008144762A2 (en) 2007-05-21 2008-05-21 Organic electrodes and electronic devices

Country Status (1)

Country Link
WO (1) WO2008144762A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2466495B (en) * 2008-12-23 2013-09-04 Cambridge Display Tech Ltd Method of fabricating a self-aligned top-gate organic transistor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429450B1 (en) * 1997-08-22 2002-08-06 Koninklijke Philips Electronics N.V. Method of manufacturing a field-effect transistor substantially consisting of organic materials
US20050051770A1 (en) * 2003-09-04 2005-03-10 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005158775A (en) * 2003-11-20 2005-06-16 Hiroyuki Okada Manufacturing method of organic thin film field effect transistor
US20050212014A1 (en) * 2004-03-26 2005-09-29 Masahiro Horibe Semiconductor device and semiconductor sensor
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
EP1732150A1 (en) * 2005-06-07 2006-12-13 Xerox Corporation Organic thin film transistors with multilayer electrodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429450B1 (en) * 1997-08-22 2002-08-06 Koninklijke Philips Electronics N.V. Method of manufacturing a field-effect transistor substantially consisting of organic materials
US20050051770A1 (en) * 2003-09-04 2005-03-10 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005158775A (en) * 2003-11-20 2005-06-16 Hiroyuki Okada Manufacturing method of organic thin film field effect transistor
US20050212014A1 (en) * 2004-03-26 2005-09-29 Masahiro Horibe Semiconductor device and semiconductor sensor
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
EP1732150A1 (en) * 2005-06-07 2006-12-13 Xerox Corporation Organic thin film transistors with multilayer electrodes

Also Published As

Publication number Publication date
WO2008144762A2 (en) 2008-11-27

Similar Documents

Publication Publication Date Title
WO2014051728A3 (en) Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
GB2494017A (en) Graphene/nanostructure fet with self-aligned contact and gate
GB2510058A (en) Graphene or carbon nanotube devices with localized bottom gates and gate dielectric
WO2013081853A3 (en) Doping carbon nanotubes and graphene for improving electronic mobility
WO2012119125A3 (en) High performance graphene transistors and fabrication processes thereof
TW200631065A (en) Strained transistor with hybrid-strain inducing layer
TW200644224A (en) Semiconductor device and method for manufacturing the same
TW200625464A (en) Electric device with vertical component
GB2453492A (en) Organic el device and manufacturing method thereof
WO2008091273A3 (en) Carbon nanotube field effect transistor
WO2008105077A1 (en) Compound semiconductor device and process for producing the same
TW200640015A (en) TFT substrate and display device having the same
TWI370312B (en)
TW200644241A (en) Wide bandgap transistors with gate-source field plates
WO2008008648A3 (en) Short channel vertical fets
GB2500851A (en) Radiation hardened transistors based on graphene and carbon nanotubes
TW200801745A (en) Electro-optical device and electronic apparatus
EP1890334A3 (en) Thin-film transistor substrate, method of manufacturing the same and display apparatus having the same
TW200743217A (en) Liquid crystal display device and fabricating method thereof
WO2008025989A3 (en) Organic electronic device
WO2008099528A1 (en) Display device and method for manufacturing display device
TW200802884A (en) Thin film transistor, method for fabricating the same and display device
WO2009019864A1 (en) Semiconductor device, method for manufacturing the same and image display
MY188298A (en) Multi-gate high electron mobility transistors and methods of fabrication
GB2471405A (en) Electronic device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08769570

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08769570

Country of ref document: EP

Kind code of ref document: A2