WO2009014748A1 - Film forming method for a semiconductor - Google Patents
Film forming method for a semiconductor Download PDFInfo
- Publication number
- WO2009014748A1 WO2009014748A1 PCT/US2008/009044 US2008009044W WO2009014748A1 WO 2009014748 A1 WO2009014748 A1 WO 2009014748A1 US 2008009044 W US2008009044 W US 2008009044W WO 2009014748 A1 WO2009014748 A1 WO 2009014748A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- gas
- plasma
- sicn
- semiconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3148—Silicon Carbide layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107001702A KR101139546B1 (en) | 2007-07-25 | 2008-07-24 | Film forming method for a semiconductor |
US12/452,784 US8435882B2 (en) | 2007-07-25 | 2008-07-24 | Film forming method for a semiconductor |
CN2008801003283A CN101765904B (en) | 2007-07-25 | 2008-07-24 | Film forming technology for a semiconductor |
JP2010518232A JP5204229B2 (en) | 2007-07-25 | 2008-07-24 | Method for forming semiconductors, etc. |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96194207P | 2007-07-25 | 2007-07-25 | |
US60/961,942 | 2007-07-25 | ||
US12/008,770 US8197913B2 (en) | 2007-07-25 | 2008-01-14 | Film forming method for a semiconductor |
US12/008,770 | 2008-01-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009014748A1 true WO2009014748A1 (en) | 2009-01-29 |
Family
ID=40281683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/009044 WO2009014748A1 (en) | 2007-07-25 | 2008-07-24 | Film forming method for a semiconductor |
Country Status (6)
Country | Link |
---|---|
US (2) | US8197913B2 (en) |
JP (1) | JP5204229B2 (en) |
KR (1) | KR101139546B1 (en) |
CN (1) | CN101765904B (en) |
TW (1) | TWI406338B (en) |
WO (1) | WO2009014748A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3384795B2 (en) * | 1999-05-26 | 2003-03-10 | 忠弘 大見 | Plasma process equipment |
US8962454B2 (en) | 2010-11-04 | 2015-02-24 | Tokyo Electron Limited | Method of depositing dielectric films using microwave plasma |
US9543123B2 (en) * | 2011-03-31 | 2017-01-10 | Tokyo Electronics Limited | Plasma processing apparatus and plasma generation antenna |
JP6046351B2 (en) * | 2012-01-19 | 2016-12-14 | 日新電機株式会社 | Insulating film and manufacturing method thereof |
US9431235B1 (en) | 2015-04-24 | 2016-08-30 | International Business Machines Corporation | Multilayer dielectric structures with graded composition for nano-scale semiconductor devices |
KR102616489B1 (en) | 2016-10-11 | 2023-12-20 | 삼성전자주식회사 | Method for fabricating semiconductor device |
US11149350B2 (en) * | 2018-01-10 | 2021-10-19 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064302A (en) * | 2003-08-15 | 2005-03-10 | Tokyo Electron Ltd | Film forming method, semiconductor device, manufacturing method thereof and substrate processing system |
JP2005223360A (en) * | 1999-03-09 | 2005-08-18 | Tokyo Electron Ltd | Manufacturing method of semiconductor device |
JP2006128591A (en) * | 2004-01-13 | 2006-05-18 | Tokyo Electron Ltd | Method for manufacturing semiconductor device and film-forming system |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000074127A (en) | 1998-08-26 | 2000-03-07 | Bridgestone Corp | Vibration isolating device |
KR100407542B1 (en) * | 1999-03-09 | 2003-11-28 | 동경 엘렉트론 주식회사 | Semiconductor device and production method therefor |
JP3384795B2 (en) | 1999-05-26 | 2003-03-10 | 忠弘 大見 | Plasma process equipment |
JP2001284340A (en) * | 2000-03-30 | 2001-10-12 | Hitachi Kokusai Electric Inc | Apparatus and method for manufacturing semiconductor device |
US6458718B1 (en) * | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
US6657284B1 (en) * | 2000-12-01 | 2003-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Graded dielectric layer and method for fabrication thereof |
JP4727057B2 (en) * | 2001-03-28 | 2011-07-20 | 忠弘 大見 | Plasma processing equipment |
JP4257051B2 (en) * | 2001-08-10 | 2009-04-22 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor integrated circuit device |
DE10238024B4 (en) * | 2002-08-20 | 2007-03-08 | Infineon Technologies Ag | Method for integrating air as a dielectric in semiconductor devices |
JP4454242B2 (en) * | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
KR101162377B1 (en) * | 2003-03-28 | 2012-07-09 | 도요 세이칸 가부시키가이샤 | Chemical vapor deposition film formed by plasma cvd process and method for forming same |
US7144803B2 (en) * | 2003-04-17 | 2006-12-05 | Semiconductor Research Corporation | Methods of forming boron carbo-nitride layers for integrated circuit devices |
JP3940095B2 (en) * | 2003-05-08 | 2007-07-04 | 忠弘 大見 | Substrate processing equipment |
JP2005093737A (en) | 2003-09-17 | 2005-04-07 | Tadahiro Omi | Plasma film forming device, plasma film forming method, method of manufacturing semiconductor device, liquid crystal display device, and organic el element |
JP4393844B2 (en) | 2003-11-19 | 2010-01-06 | 東京エレクトロン株式会社 | Plasma film forming apparatus and plasma film forming method |
CN100433294C (en) * | 2004-01-13 | 2008-11-12 | 东京毅力科创株式会社 | Method for manufacturing semiconductor device and film-forming system |
JP2005213633A (en) * | 2004-02-02 | 2005-08-11 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | Production method for silicon nitride film or silicon oxynitride film by chemical vapor deposition method |
US7033940B1 (en) * | 2004-03-30 | 2006-04-25 | Advanced Micro Devices, Inc. | Method of forming composite barrier layers with controlled copper interface surface roughness |
US20050250346A1 (en) * | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
JP4555143B2 (en) * | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | Substrate processing method |
US7776736B2 (en) * | 2004-05-11 | 2010-08-17 | Tokyo Electron Limited | Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same |
US7456093B2 (en) * | 2004-07-03 | 2008-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improving a semiconductor device delamination resistance |
JP2006073569A (en) * | 2004-08-31 | 2006-03-16 | Matsushita Electric Ind Co Ltd | Semiconductor apparatus and its manufacturing method |
JP4664119B2 (en) | 2005-05-17 | 2011-04-06 | 東京エレクトロン株式会社 | Plasma processing equipment |
US7972910B2 (en) * | 2005-06-03 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of integrated circuit device including thin film transistor |
JP4993607B2 (en) * | 2005-06-20 | 2012-08-08 | 国立大学法人東北大学 | Interlayer insulating film and wiring structure, and manufacturing method thereof |
US7915166B1 (en) * | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
-
2008
- 2008-01-14 US US12/008,770 patent/US8197913B2/en not_active Expired - Fee Related
- 2008-07-24 JP JP2010518232A patent/JP5204229B2/en not_active Expired - Fee Related
- 2008-07-24 CN CN2008801003283A patent/CN101765904B/en not_active Expired - Fee Related
- 2008-07-24 WO PCT/US2008/009044 patent/WO2009014748A1/en active Application Filing
- 2008-07-24 KR KR1020107001702A patent/KR101139546B1/en not_active IP Right Cessation
- 2008-07-24 TW TW097128114A patent/TWI406338B/en not_active IP Right Cessation
- 2008-07-24 US US12/452,784 patent/US8435882B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005223360A (en) * | 1999-03-09 | 2005-08-18 | Tokyo Electron Ltd | Manufacturing method of semiconductor device |
JP2005064302A (en) * | 2003-08-15 | 2005-03-10 | Tokyo Electron Ltd | Film forming method, semiconductor device, manufacturing method thereof and substrate processing system |
JP2006128591A (en) * | 2004-01-13 | 2006-05-18 | Tokyo Electron Ltd | Method for manufacturing semiconductor device and film-forming system |
Also Published As
Publication number | Publication date |
---|---|
US8435882B2 (en) | 2013-05-07 |
CN101765904A (en) | 2010-06-30 |
TWI406338B (en) | 2013-08-21 |
TW200913072A (en) | 2009-03-16 |
KR101139546B1 (en) | 2012-04-27 |
CN101765904B (en) | 2013-09-25 |
KR20100022535A (en) | 2010-03-02 |
JP5204229B2 (en) | 2013-06-05 |
US20090029066A1 (en) | 2009-01-29 |
US8197913B2 (en) | 2012-06-12 |
JP2010534417A (en) | 2010-11-04 |
US20100117204A1 (en) | 2010-05-13 |
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