WO2009029397A1 - Thermally enhanced thin semiconductor package - Google Patents
Thermally enhanced thin semiconductor package Download PDFInfo
- Publication number
- WO2009029397A1 WO2009029397A1 PCT/US2008/072207 US2008072207W WO2009029397A1 WO 2009029397 A1 WO2009029397 A1 WO 2009029397A1 US 2008072207 W US2008072207 W US 2008072207W WO 2009029397 A1 WO2009029397 A1 WO 2009029397A1
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- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor die
- leadframe
- clip
- molding material
- package
- Prior art date
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- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
Definitions
- Semiconductor die packages are known in the semiconductor industry, but could be improved. For example, electronic devices such as wireless phones and the like are becoming smaller and smaller. It is desirable to make thinner semiconductor die packages so that they can be incorporated into such electronic devices. It would also be desirable to improve upon the heat dissipation properties of conventional semiconductor die packages.
- a clip and a leadframe may sandwich a semiconductor die in an exemplary semiconductor die package. If the clip and the leadframe are not properly aligned with each other and the semiconductor die, then the manufactured semiconductor die package could be defective and rework may be needed.
- Embodiments of the invention address these and other problems, individually and collectively.
- Embodiments of the invention are directed to semiconductor die packages, methods for making semiconductor die packages, and assemblies and systems using such semiconductor die packages.
- One embodiment of the invention is directed to a semiconductor die package.
- the semiconductor die package includes a semiconductor die comprising an input at a first top semiconductor die surface and an output at a second bottom semiconductor die surface.
- a leadframe having a first leadframe surface and a second leadframe surface opposite the first leadframe surface is in the semiconductor die package and is coupled to the first top semiconductor die surface.
- a clip having a first clip surface and a second clip surface is coupled to the second bottom semiconductor die surface.
- a molding material having exterior molding material surfaces covers at least a portion of the leadframe, the clip, and the semiconductor die. The first leadframe surface and the first clip surface are exposed by the molding material, and the first leadframe surface, the first clip surface, and the exterior molding material surfaces of the molding material form exterior surfaces of the semiconductor die package.
- Another embodiment of the invention is directed to a method for forming a semiconductor die package.
- the method comprises obtaining a semiconductor die comprising an input at a first top semiconductor die surface and an output at a second bottom semiconductor die surface, and attaching a leadframe having a first leadframe surface and a second leadframe surface opposite the first leadframe surface to the semiconductor die.
- the second leadframe surface is coupled to the first top semiconductor die surface.
- a clip is attached to the second bottom semiconductor die surface.
- the clip has a first clip surface and a second clip surface.
- a molding material is molded around at least a portion of the leadframe, the clip, and the semiconductor die. After molding, the first leadframe surface and the first clip surface are exposed by the molding material.
- the first leadframe surface, the first clip surface, and the exterior molding material surfaces of the molding material form exterior surfaces of the semiconductor die package.
- FIG. 1 shows a top perspective view of a semiconductor die package according to an embodiment of the invention.
- FIG. 2 shows a bottom perspective view of the semiconductor die package shown in FIG. 1.
- FIG. 3 shows a top perspective view of a semiconductor die package according to an embodiment of the invention with the outline of the molding material shown.
- FIG. 4 shows a bottom perspective view of a semiconductor die package according to an embodiment of the invention with the outline of the molding material shown.
- FIG. 5 shows a top perspective view of a semiconductor die package according to an embodiment of the invention with a portion of the molding material being removed.
- FIG. 6 shows a bottom perspective view of a semiconductor die package according to an embodiment of the invention with a portion of the molding material being removed.
- FIG. 7 shows a side cross-sectional view of a semiconductor die package according to an embodiment of the invention.
- FIG. 8 shows a front cross-sectional view of a semiconductor die package according to an embodiment of the invention.
- FIG. 9 shows an exploded view of a semiconductor die package according to an embodiment of the invention.
- FIG. 10 shows a top view of a semiconductor die package according to an embodiment of the invention.
- FIG. 11 shows a top perspective view of a leadframe structure attached to a frame.
- FIG. 12 shows a bottom perspective view of a thermal drain clip.
- FIG. 13 shows a bottom perspective view of an internal frame die attach pad area.
- FIG. 14 shows a bottom perspective view of an assembled frame with an attached thermal drain clip.
- FIG. 15 is a top perspective view of an assembled frame with an attached thermal drain clip.
- FIG. 16 is a top perspective view of an assembled frame with an attached thermal drain clip, after molding.
- FIG. 17 is a bottom perspective view of an assembled frame with an attached thermal drain clip, after molding.
- FIG. 18 is a side, cross-sectional view of an embodiment of the invention after assembly and molding.
- FIGS. 19(a) and 19(c) show die bonding and layouts.
- FIGS. 20(a)-20(k) show portions of a semiconductor die package as it is being formed.
- FIG. 21 shows a semiconductor die comprising a vertical MOSFET with a trenched gate.
- the semiconductor die package includes a semiconductor die comprising an input (e.g., a source region) at a first top semiconductor die surface and an output (e.g., a drain region) at a second bottom semiconductor die surface.
- a leadframe having a first leadframe surface and a second leadframe surface opposite the first leadframe surface is in the semiconductor die package and is coupled to the first top semiconductor die surface.
- a clip e.g., a drain clip
- a molding material having exterior molding material surfaces covers at least a portion of the leadframe, the clip, and the semiconductor die. The first leadframe surface and the first clip surface are exposed by the molding material, and the first leadframe surface, the first clip surface, and the exterior molding material surfaces of the molding material may form exterior surfaces of the semiconductor die package.
- FIG. 1 shows a top perspective view of a semiconductor die package 10 according to an embodiment of the invention.
- the semiconductor die package 10 comprises a leadframe 214 comprising a source lead structure 214(a) and a gate lead structure 214(b).
- the source lead structure 214(a) comprises a source pad 14, an exposed source surface 14(a) (which may be an example of at least part of a first leadframe surface), and source leads 12.
- the leadframe 214 may also comprise a gate lead structure comprising a gate lead 1 1.
- An exposed thermal clip 15 is also shown, and will be described in further detail below with respect to FIG. 2.
- a molding material 13 may be formed on at least a portion of the leadframe 214, the clip 215, and a semiconductor die (not shown) that lies between the leadframe 214 and the clip 15.
- the molding material 13 may be formed using any suitable material including an epoxy based molding material. If desired, a heatsink (not shown) could be placed on top of the surface 14(a) to improve heat dissipation properties.
- a top exterior surface of the molding material 13 of the semiconductor die package 10 is substantially coplanar with and exposes the exposed source pad surface 14(a). Extensions to the source leads 12 (as well as the gate lead 1 1) are also exposed by the molding material 13 in this example.
- the topmost surface of the package may be formed at least in part by the exposed source surface 14(a) and the top exterior surface of the molding material 13. This particular configuration results in a very thin semiconductor die package, with good heat dissipation properties. Heat can dissipate through the gate lead 11, the source lead 12, and the exposed thermal clip 15.
- FIG. 2 shows a bottom view of the semiconductor die package 10 shown in
- a bottom clip surface 15(a) (which may be an example of a first clip surface) of the thermal clip 15 may be exposed by the molding material 13.
- the bottom clip surface 15(a) may be substantially coplanar with the bottom surface of the molding material 13.
- the ends of the leads 11, 12 may also be substantially coplanar with the bottom clip surface 15(a) so that the semiconductor die package 10 can be mounted to a printed circuit board or the like.
- the leads 1 1, 12 may extend out of the molding material 13 from one end of the semiconductor die package 10, while a portion of the clip 15 may extend out of the molding material 13 from the opposite end of the semiconductor die package 10.
- the package 10 shown in FIG. 2 is a leaded package.
- “leadless" packages could be produced.
- a leadless package may still include leads, but they may not extend past the lateral surfaces of the molding material 13 at all or to any appreciable degree.
- FIG. 3 is a top perspective view of the semiconductor die package shown in
- FIG. 1 with the outline of the molding material being shown by dotted lines.
- FlG. 4 shows a bottom perspective view of the semiconductor die package shown in FIG. 1 with the outline of the molding material being shown by dotted lines.
- FIGS. 3 and 4 more clearly show a leadframe comprising a gate lead structure 11 and a source lead structure 12.
- the gate lead structure 11 and the source lead structure 12 are electrically isolated from each other.
- a semiconductor (e.g., silicon) die 32 is sandwiched between the leadframe and a thermal drain clip 15.
- the thermal clip 15 and the leadframe may be electrically coupled to an output region in the semiconductor die 32 in the semiconductor die package 10.
- the leadframe 214 and the thermal drain clip 15 may be formed of any suitable electrically conductive material including copper, aluminum, noble metals and alloys thereof.
- the leadframe and the thermal drain clip 15 may also be plated with solderable layers (e.g., underbump metallurgy layers).
- the semiconductor dies used in the semiconductor packages according to preferred embodiments of the invention include vertical power transistors.
- Vertical power transistors include VDMOS transistors.
- a VDMOS transistor is a MOSFET that has two or more semiconductor regions formed by diffusion. It has a source region, a drain region, and a gate. The device is vertical in that the source region and the drain region are at opposite surfaces of the semiconductor die.
- the gate may be a trenched gate structure or a planar gate structure, and is formed at the same surface as the source region. Trenched gate structures are preferred, since trenched gate structures are narrower and occupy less space than planar gate structures.
- the current flow from the source region to the drain region in a VDMOS device is substantially perpendicular to the die surfaces.
- FIG. 21 An example of a semiconductor die 800 comprising a vertical MOSFET with a trenched gate is shown in FIG. 21.
- Other devices that may be present in a semiconductor die may include diodes, BJT (bipolar junction transistors) and other types of electrical devices.
- part of the leadframe 214 may be etched to allow the molding material 13 to lock to the leadframe.
- the gate lead structure 11 has a gate pad 31 and a partially etched region 31 (a) for locking.
- the source lead structure 214(a) has an exposed source pad 14 with an exposed source pad surface 14(a).
- the source pad surface 14(a) is also defined by a partially etched region 34 for mold locking.
- the source pad surface 14(a) may be part of a protruding region that protrudes from the other portions of the source pad 14.
- the drain clip 15 may also be partially etched, and may have a partially etched region 311 to allow the molding material 13 to lock to the drain clip 15.
- the drain pad surface 15(a) may be part of a protruding region that protrudes from the other portion of the source pad.
- Any suitable etching process may be used to etch the leadframe and/or the clip
- etching may occur to any suitable depth. Suitable etching processes may include wet or dry etching processes.
- the leadframe may be etched about one half way through the thickness of the leadframe. The etched leadframe maybe characterized as being half-etched under such circumstances.
- FIG. 5 shows a top perspective view of the semiconductor die package 10 with a portion of the molding material 13 being removed.
- the molding material 13 may cover ledges forming the partially etched regions 3 l(a), 34 of the leadframe 214, without covering the source pad surface 14(a).
- the top exterior surface of the molding material 13 may be substantially coplanar with the source pad surface 14(a).
- the molding material 13 may cover the top surface 31 (b) of the gate pad 31.
- gate pad 31 (b) of the gate pad 31 may be exposed, however, in other embodiments of the invention.
- FIG. 6 shows a bottom perspective view of the semiconductor die package with a portion of the molding material 13 being removed.
- FIG. 6 more clearly shows the partially etched region 31 1 of the clip 15.
- the molding material 13 may cover the surfaces of the partially etched region 311, but does not cover the drain surface 15(a).
- the drain surface 15(a) can be substantially coplanar with the bottom exterior surface of the molding material
- the clip 15 may also have lateral grooves 127 improve the locking of the molding material 13 to the clip 15.
- FIG. 7 is a cross-sectional view of the semiconductor die package.
- FIG. 7 more clearly shows solder bumps 76 coupling a first surface 32(a) of the semiconductor die
- Solder paste 99 may contact the solder bumps 76 and the source pad
- the semiconductor die 32 may also comprise a second surface 32(b) that is coupled to the drain clip 15. Solder can also be used to couple a second surface 15(b) of the drain clip 15 to the second surface 32(b) of the semiconductor die 32.
- the molding material 13 does not cover the top first surface 14(a) of the source pad 14 and the bottom surface of the clip
- the bottom surface 15(a) of the clip 15 is also substantially coplanar with the bottom surface of the molding material 13.
- source leads 12 extend from one side of the semiconductor die package, while the drain clip 15 extends from the opposite side of the semiconductor die package.
- the solder bumps 76 and the solder paste 99 may have different melting temperatures in some embodiments of the invention, and any suitable solder material may be used including Pb based solder and lead free solder materials.
- Other types of conductive adhesives such as conductive epoxies may also be used to electrical and mechanically couple parts in the package 10 together.
- FIG. 8 shows a front cross-sectional view of the semiconductor die package 10 in FIG. 7.
- FIG. 8 additionally shows a partially etched region 34 of the source pad 14, and the molding material 13 filling in the partially etched region 34 to provide for molding locking.
- FIG. 9 shows an exploded view of the previously described leadframe 214, molding material 13, semiconductor die 32, and the clip 15.
- FIG. 10 shows a top view of the semiconductor die package 10.
- the method may comprise obtaining a semiconductor die comprising an input at a first top semiconductor die surface and an output at a second bottom semiconductor die surface, and attaching a leadframe having a first leadframe surface and a second leadframe surface opposite the first leadframe surface to the semiconductor die.
- the second leadframe surface is coupled to the first top semiconductor die surface.
- a clip having a first clip surface and a second clip surface is attached to the semiconductor die before or after the semiconductor die is attached to the second leadframe surface.
- the second clip surface is coupled to the second bottom semiconductor die surface, and a molding material is molded around at least a portion of the leadframe, the clip, and the semiconductor die, wherein after molding, the first leadframe surface and the first clip surface are exposed by the molding material, and wherein the first leadframe surface, the first clip surface, and the exterior molding material surfaces of the molding material form exterior surfaces of the semiconductor die package.
- FIG. 11 shows a top perspective view of a leadframe precursor structure 11 1 according to an embodiment of the invention. It includes a lifted anvil 113 at a first end of the leadframe precursor structure 111 attached to a frame 112.
- the frame 112 may define a frame window 1111 for molding.
- the upper surface of the anvil 113 may lie in a different plane and may be downset with respect to the upper surface of the frame 1 12.
- a horizontal slot 1112 is parallel to the orientation of the anvil 1 13 and two vertical locator slots 1 1 13 on opposite ends of the horizontal slot 1112.
- the vertical slots 11 13 will be used for thermal drain clip hook positioning.
- the leadframe precursor structure 1111 also includes a source lead structure including a source pad 14 and integral source leads 12, and a gate lead structure including a gate pad 31 and an integral gate lead 11, attached to the frame 112 via tie bars 118 at a second end opposite the first end. As in prior FIGS., partially etched regions 34 and 31 (a) are shown in the source pad 14 and the gate pad 31, respectively.
- FIG. 12 shows a perspective view of the drain clip 15. It includes a drain clip surface 15(a), and slotted regions 127 for mold locking, as well as a relief slot 126 for cutting in a singulation process. It also includes a thermal clip locator hook 125 extending from a thermal clip pad 124.
- the drain clip 15 can be formed by any suitable process including etching and stamping.
- FIG. 13 shows the leadframe precursor structure 1 11 in FIG. 11 , flipped over.
- FIG. 13 shows a support area 1216 for the clip 15 on the anvil 113.
- Solder paste 1215 is on the support area 1216.
- Solder paste 99 is also deposited on the internal surfaces of the gate pad and the source pad.
- a flat frame surface 1213 is also present in the leadframe precursor structure 1 11.
- FIG. 14 shows a perspective bottom view of an assembled frame with an attached thermal drain clip.
- FIG. 15 shows a top perspective view of the assembled frame with an attached drain clip.
- FIG. 15 also shows a thermal die attach clip pad 159.
- FIG. 18 shows a cross-sectional view of the assembly shown in FIGS. 16-17.
- FIG. 18 additionally shows a conductive adhesive (e.g., solder) 186 coupling the die 32 to the drain clip 15, and a setting point 1710 between the clip 15 and the anvil 1 13.
- a conductive adhesive e.g., solder
- the clip 15 can be placed on the source and gate pads so that the hook 125 fits into the horizontal slot 1112. Opposite edges defining the vertical slots 1113 restrict the lateral movement of the hook 125, thereby stabilizing the lateral and vertical positioning of the clip 15, relative to the source and gate pads 14, 31 (See FIG. 15).
- a semiconductor die 32 is sandwiched between the source and gate pads 14, 31 , and the drain clip 15. The semiconductor die 32 may have been bumped with solder using conventional solder deposition processes.
- a molding material 113 can be formed so that it covers at least a portion of the semiconductor die 32, the frame 214 in the precursor 1 11, and the clip 15.
- the top surfaces of the source pad 14, gate lead 11, and source leads 12, are exposed by the molding material 13, and may be substantially coplanar with the top exterior surface of the molding material 13.
- the bottom surface of the drain clip 15 is substantially coplanar with the bottom surface of the molding material 13.
- the molding material 13 lies within a frame window 179 formed by the leadframe precursor 11 1.
- Molding may occur using any suitable molding tool or molding process.
- the molding tool may have two molding dies, where surfaces of the molding dies contact surfaces of the leadframe and the clip so that they are not covered with molding material during the molding process.
- Any suitable molding temperatures and pressures may be used in embodiments of the invention.
- the leads 11, 12 as well as the portion of clip 15 with the slot 124 may be cut with a saw or the like.
- the leads 11, 12, may then be bent (if they are not already bent) to form the semiconductor die package.
- the semiconductor die package may be formed in an array.
- FIGS. 19(a)-19(b) show top plan views of assemblies like those shown in FIGS. 16-18, which two different die sizes.
- FIG. 19(a) shows a die size of 2.66 mm x 3.66 mm.
- FIG. 19(b) shows a die size of 4 mm x 4 mm. Accordingly, as shown in FIGS. 19(a)- 19(b), embodiments of the invention may incorporate any suitable die size, or type of die.
- FIGS. 20(a)-20(k) show portions of a semiconductor die package as it is being formed. Many of the steps in FIGS. 20(a)-20(k) have been described above, and the descriptions are applicable here.
- FIGS. 20(a)-20(k) show the following: FIG. 20(a) shows a thermal drain clip
- FIG. 20(b) shows a die 32 being attached to the thermal drain clip 15 using a soft solder and die attach process (using reflow);
- FIGS. 20(c)-20(d) show a structure formed after singulation and subsequent placement (by flipping) of the clip 15 and die 32 combination onto a leadframe precursor 111;
- FIG. 20(e) shows a structure formed after a reflow process is performed, wherein the die 32, the clip 15, and the precursor 111 are joined together;
- FIG. 20(f) shows a structure formed after a film assisted molding process is performed, whereby a molding material 13 is formed around selected parts of the package;
- FIG. 20(g) shows a structure formed after a water jet deflash process is performed;
- FIG. 20(h) shows a structure formed after a laser marking process is performed, whereby the die package can be laser marked for identification purposes;
- FIG. 20(i) shows a structure formed after a singulation process is performed, whereby the package can be separated from other packages in an array;
- FIG. 20(j) shows a structure formed after a unit test step is performed;
- FIG. 20(k) shows a structure formed just prior to a pack and ship step.
- Embodiments of the invention have a number of advantages. Embodiments of the invention may have some, none or all of the following advantages. First, by exposing portions of the leadframe and clip through the molding material, the packages are quite thin and can be used in thin devices such as wireless phones, PDAs, etc. Second, since larger surfaces of the clip and the leadframe are exposed, heat can easily dissipate from a semiconductor die within a semiconductor die package according to an embodiment of the invention. Third, bigger die sizes can be mounted using the same standard footprint. Fourth, as noted above, a clip can be properly aligned with a die and a leadframe using a hook, thereby reducing potential alignment errors during manufacturing.
- top and bottom surfaces are used in the context of relativity with respect to a circuit board upon which the semiconductor die packages according to embodiments of the invention are mounted. Such positional terms may or may not refer to absolute positions of such packages.
- the semiconductor die packages described above can be used in electrical assemblies including circuit boards with the packages mounted thereon. They may also be used in systems such as phones, computers, etc.
Abstract
Description
Claims
Priority Applications (2)
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DE112008002338T DE112008002338T5 (en) | 2007-08-27 | 2008-08-05 | Thermally improved thin semiconductor package |
CN200880105612XA CN101796637B (en) | 2007-08-27 | 2008-08-05 | Thermally enhanced thin semiconductor package |
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US11/845,560 US20090057852A1 (en) | 2007-08-27 | 2007-08-27 | Thermally enhanced thin semiconductor package |
US11/845,560 | 2007-08-27 |
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US (2) | US20090057852A1 (en) |
KR (1) | KR101539250B1 (en) |
CN (1) | CN101796637B (en) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3584832A1 (en) * | 2018-06-20 | 2019-12-25 | Nexperia B.V. | A lead frame assembly for a semiconductor device |
EP4148779A1 (en) * | 2021-09-14 | 2023-03-15 | Nexperia B.V. | A semiconductor device and a method of manufacture |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7791084B2 (en) * | 2008-01-09 | 2010-09-07 | Fairchild Semiconductor Corporation | Package with overlapping devices |
US8193618B2 (en) * | 2008-12-12 | 2012-06-05 | Fairchild Semiconductor Corporation | Semiconductor die package with clip interconnection |
US7973393B2 (en) * | 2009-02-04 | 2011-07-05 | Fairchild Semiconductor Corporation | Stacked micro optocouplers and methods of making the same |
US8354303B2 (en) * | 2009-09-29 | 2013-01-15 | Texas Instruments Incorporated | Thermally enhanced low parasitic power semiconductor package |
CN102473653B (en) * | 2010-02-01 | 2016-05-04 | 丰田自动车株式会社 | The manufacture method of semiconductor device and semiconductor device |
US8324025B2 (en) * | 2010-04-22 | 2012-12-04 | Team Pacific Corporation | Power semiconductor device packaging |
TWI453831B (en) | 2010-09-09 | 2014-09-21 | 台灣捷康綜合有限公司 | Semiconductor package and method for making the same |
JP5921072B2 (en) * | 2011-03-05 | 2016-05-24 | 新電元工業株式会社 | Resin-sealed semiconductor device |
CN103035631B (en) * | 2011-09-28 | 2015-07-29 | 万国半导体(开曼)股份有限公司 | Combine the semiconductor device and manufacture method thereof that encapsulate high-end and low side chip |
US9478484B2 (en) * | 2012-10-19 | 2016-10-25 | Infineon Technologies Austria Ag | Semiconductor packages and methods of formation thereof |
US9966330B2 (en) | 2013-03-14 | 2018-05-08 | Vishay-Siliconix | Stack die package |
US9589929B2 (en) | 2013-03-14 | 2017-03-07 | Vishay-Siliconix | Method for fabricating stack die package |
US20150060123A1 (en) * | 2013-09-04 | 2015-03-05 | Texas Instruments Incorporated | Locking dual leadframe for flip chip on leadframe packages |
KR102153041B1 (en) * | 2013-12-04 | 2020-09-07 | 삼성전자주식회사 | Semiconductor device package and method of manufacturing the same |
JP2015142072A (en) * | 2014-01-30 | 2015-08-03 | 株式会社東芝 | semiconductor device |
US9673097B2 (en) * | 2015-05-11 | 2017-06-06 | Texas Instruments Incorporated | Integrated clip and lead and method of making a circuit |
US10256207B2 (en) * | 2016-01-19 | 2019-04-09 | Jmj Korea Co., Ltd. | Clip-bonded semiconductor chip package using metal bumps and method for manufacturing the package |
US9892997B2 (en) * | 2016-04-19 | 2018-02-13 | Infineon Technologies Americas Corp. | Adaptable molded leadframe package and related method |
DE102016107792B4 (en) | 2016-04-27 | 2022-01-27 | Infineon Technologies Ag | Pack and semi-finished product with a vertical connection between support and bracket and method of making a pack and a batch of packs |
CN106449578A (en) * | 2016-09-21 | 2017-02-22 | 无锡罗姆半导体科技有限公司 | Semiconductor packaging part and packaging method therefor |
TWI608583B (en) * | 2016-12-14 | 2017-12-11 | Taiwan Semiconductor Co Ltd | Common source type package structure |
US10121742B2 (en) * | 2017-03-15 | 2018-11-06 | Amkor Technology, Inc. | Method of forming a packaged semiconductor device using ganged conductive connective assembly and structure |
EP3462482A1 (en) * | 2017-09-27 | 2019-04-03 | Nexperia B.V. | Surface mount semiconductor device and method of manufacture |
CN111261596A (en) * | 2018-12-03 | 2020-06-09 | 杰米捷韩国株式会社 | Semiconductor package using multiple clip structures and method of manufacturing the same |
US20200194347A1 (en) * | 2018-12-18 | 2020-06-18 | Alpha And Omega Semiconductor (Cayman) Ltd. | Semiconductor package and method of making the same |
US11302615B2 (en) | 2019-12-30 | 2022-04-12 | Texas Instruments Incorporated | Semiconductor package with isolated heat spreader |
US11600498B2 (en) * | 2019-12-31 | 2023-03-07 | Texas Instruments Incorporated | Semiconductor package with flip chip solder joint capsules |
CN111524868B (en) * | 2020-03-25 | 2024-03-12 | 长电科技(宿迁)有限公司 | Combined structure of lead frame and metal clamping piece and riveting and chip mounting process |
EP4270476A1 (en) * | 2022-04-29 | 2023-11-01 | Infineon Technologies Austria AG | Semiconductor package and method for marking a semiconductor package |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6040626A (en) * | 1998-09-25 | 2000-03-21 | International Rectifier Corp. | Semiconductor package |
US6133634A (en) * | 1998-08-05 | 2000-10-17 | Fairchild Semiconductor Corporation | High performance flip chip package |
US6307755B1 (en) * | 1999-05-27 | 2001-10-23 | Richard K. Williams | Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3956821A (en) * | 1975-04-28 | 1976-05-18 | Fairchild Camera And Instrument Corporation | Method of attaching semiconductor die to package substrates |
US4058899A (en) * | 1976-08-23 | 1977-11-22 | Fairchild Camera And Instrument Corporation | Device for forming reference axes on an image sensor array package |
US4680613A (en) * | 1983-12-01 | 1987-07-14 | Fairchild Semiconductor Corporation | Low impedance package for integrated circuit die |
US4751199A (en) * | 1983-12-06 | 1988-06-14 | Fairchild Semiconductor Corporation | Process of forming a compliant lead frame for array-type semiconductor packages |
US4772935A (en) * | 1984-12-19 | 1988-09-20 | Fairchild Semiconductor Corporation | Die bonding process |
US4890153A (en) * | 1986-04-04 | 1989-12-26 | Fairchild Semiconductor Corporation | Single bonding shelf, multi-row wire-bond finger layout for integrated circuit package |
US4720396A (en) * | 1986-06-25 | 1988-01-19 | Fairchild Semiconductor Corporation | Solder finishing integrated circuit package leads |
US4791473A (en) * | 1986-12-17 | 1988-12-13 | Fairchild Semiconductor Corporation | Plastic package for high frequency semiconductor devices |
US4839717A (en) * | 1986-12-19 | 1989-06-13 | Fairchild Semiconductor Corporation | Ceramic package for high frequency semiconductor devices |
US4731701A (en) * | 1987-05-12 | 1988-03-15 | Fairchild Semiconductor Corporation | Integrated circuit package with thermal path layers incorporating staggered thermal vias |
US4796080A (en) * | 1987-07-23 | 1989-01-03 | Fairchild Camera And Instrument Corporation | Semiconductor chip package configuration and method for facilitating its testing and mounting on a substrate |
US5327325A (en) * | 1993-02-08 | 1994-07-05 | Fairchild Space And Defense Corporation | Three-dimensional integrated circuit package |
US5646446A (en) * | 1995-12-22 | 1997-07-08 | Fairchild Space And Defense Corporation | Three-dimensional flexible assembly of integrated circuits |
US6424035B1 (en) * | 1998-11-05 | 2002-07-23 | Fairchild Semiconductor Corporation | Semiconductor bilateral switch |
KR100335480B1 (en) * | 1999-08-24 | 2002-05-04 | 김덕중 | Leadframe using chip pad as heat spreading path and semiconductor package thereof |
KR100335481B1 (en) * | 1999-09-13 | 2002-05-04 | 김덕중 | Power device having multi-chip package structure |
US6720642B1 (en) * | 1999-12-16 | 2004-04-13 | Fairchild Semiconductor Corporation | Flip chip in leaded molded package and method of manufacture thereof |
US6989588B2 (en) * | 2000-04-13 | 2006-01-24 | Fairchild Semiconductor Corporation | Semiconductor device including molded wireless exposed drain packaging |
US6556750B2 (en) * | 2000-05-26 | 2003-04-29 | Fairchild Semiconductor Corporation | Bi-directional optical coupler |
KR100370231B1 (en) * | 2000-06-13 | 2003-01-29 | 페어차일드코리아반도체 주식회사 | Power module package having a insulator type heat sink attached a backside of leadframe & manufacturing method thereof |
KR100403608B1 (en) * | 2000-11-10 | 2003-11-01 | 페어차일드코리아반도체 주식회사 | Stacked intelligent power module package and manufacturing method thereof |
KR100374629B1 (en) * | 2000-12-19 | 2003-03-04 | 페어차일드코리아반도체 주식회사 | A power semiconductor package for thin and small size |
US6469384B2 (en) * | 2001-02-01 | 2002-10-22 | Fairchild Semiconductor Corporation | Unmolded package for a semiconductor device |
US6777786B2 (en) * | 2001-03-12 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor device including stacked dies mounted on a leadframe |
US6891257B2 (en) * | 2001-03-30 | 2005-05-10 | Fairchild Semiconductor Corporation | Packaging system for die-up connection of a die-down oriented integrated circuit |
US6645791B2 (en) * | 2001-04-23 | 2003-11-11 | Fairchild Semiconductor | Semiconductor die package including carrier with mask |
US6893901B2 (en) * | 2001-05-14 | 2005-05-17 | Fairchild Semiconductor Corporation | Carrier with metal bumps for semiconductor die packages |
US7061080B2 (en) * | 2001-06-11 | 2006-06-13 | Fairchild Korea Semiconductor Ltd. | Power module package having improved heat dissipating capability |
US6683375B2 (en) * | 2001-06-15 | 2004-01-27 | Fairchild Semiconductor Corporation | Semiconductor die including conductive columns |
US6449174B1 (en) * | 2001-08-06 | 2002-09-10 | Fairchild Semiconductor Corporation | Current sharing in a multi-phase power supply by phase temperature control |
US6633030B2 (en) * | 2001-08-31 | 2003-10-14 | Fiarchild Semiconductor | Surface mountable optocoupler package |
US6774465B2 (en) * | 2001-10-05 | 2004-08-10 | Fairchild Korea Semiconductor, Ltd. | Semiconductor power package module |
US6891256B2 (en) * | 2001-10-22 | 2005-05-10 | Fairchild Semiconductor Corporation | Thin, thermally enhanced flip chip in a leaded molded package |
US6674157B2 (en) * | 2001-11-02 | 2004-01-06 | Fairchild Semiconductor Corporation | Semiconductor package comprising vertical power transistor |
US6566749B1 (en) * | 2002-01-15 | 2003-05-20 | Fairchild Semiconductor Corporation | Semiconductor die package with improved thermal and electrical performance |
US6830959B2 (en) * | 2002-01-22 | 2004-12-14 | Fairchild Semiconductor Corporation | Semiconductor die package with semiconductor die having side electrical connection |
US6867489B1 (en) * | 2002-01-22 | 2005-03-15 | Fairchild Semiconductor Corporation | Semiconductor die package processable at the wafer level |
AU2003218085A1 (en) * | 2002-03-12 | 2003-09-29 | Fairchild Semiconductor Corporation | Wafer-level coated copper stud bumps |
US7122884B2 (en) * | 2002-04-16 | 2006-10-17 | Fairchild Semiconductor Corporation | Robust leaded molded packages and methods for forming the same |
US6836023B2 (en) * | 2002-04-17 | 2004-12-28 | Fairchild Semiconductor Corporation | Structure of integrated trace of chip package |
KR100843737B1 (en) * | 2002-05-10 | 2008-07-04 | 페어차일드코리아반도체 주식회사 | Semiconductor package having improved reliability of solder joint |
US7061077B2 (en) * | 2002-08-30 | 2006-06-13 | Fairchild Semiconductor Corporation | Substrate based unmolded package including lead frame structure and semiconductor die |
US6777800B2 (en) * | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
US6943434B2 (en) * | 2002-10-03 | 2005-09-13 | Fairchild Semiconductor Corporation | Method for maintaining solder thickness in flipchip attach packaging processes |
US6806580B2 (en) * | 2002-12-26 | 2004-10-19 | Fairchild Semiconductor Corporation | Multichip module including substrate with an array of interconnect structures |
KR100958422B1 (en) * | 2003-01-21 | 2010-05-18 | 페어차일드코리아반도체 주식회사 | Semiconductor package having the structure for high voltage application |
US7217594B2 (en) * | 2003-02-11 | 2007-05-15 | Fairchild Semiconductor Corporation | Alternative flip chip in leaded molded package design and method for manufacture |
JP4173751B2 (en) * | 2003-02-28 | 2008-10-29 | 株式会社ルネサステクノロジ | Semiconductor device |
US7271497B2 (en) * | 2003-03-10 | 2007-09-18 | Fairchild Semiconductor Corporation | Dual metal stud bumping for flip chip applications |
US6867481B2 (en) * | 2003-04-11 | 2005-03-15 | Fairchild Semiconductor Corporation | Lead frame structure with aperture or groove for flip chip in a leaded molded package |
JP3759131B2 (en) * | 2003-07-31 | 2006-03-22 | Necエレクトロニクス株式会社 | Leadless package semiconductor device and manufacturing method thereof |
JP4294405B2 (en) * | 2003-07-31 | 2009-07-15 | 株式会社ルネサステクノロジ | Semiconductor device |
US7196313B2 (en) * | 2004-04-02 | 2007-03-27 | Fairchild Semiconductor Corporation | Surface mount multi-channel optocoupler |
US7242076B2 (en) * | 2004-05-18 | 2007-07-10 | Fairchild Semiconductor Corporation | Packaged integrated circuit with MLP leadframe and method of making same |
US7256479B2 (en) * | 2005-01-13 | 2007-08-14 | Fairchild Semiconductor Corporation | Method to manufacture a universal footprint for a package with exposed chip |
US7576429B2 (en) * | 2005-12-30 | 2009-08-18 | Fairchild Semiconductor Corporation | Packaged semiconductor device with dual exposed surfaces and method of manufacturing |
US7371616B2 (en) * | 2006-01-05 | 2008-05-13 | Fairchild Semiconductor Corporation | Clipless and wireless semiconductor die package and method for making the same |
TWM423084U (en) * | 2011-05-26 | 2012-02-21 | Vp Components Co Ltd | Bicycle upper baffle structure |
-
2007
- 2007-08-27 US US11/845,560 patent/US20090057852A1/en not_active Abandoned
-
2008
- 2008-08-05 WO PCT/US2008/072207 patent/WO2009029397A1/en active Application Filing
- 2008-08-05 DE DE112008002338T patent/DE112008002338T5/en not_active Withdrawn
- 2008-08-05 CN CN200880105612XA patent/CN101796637B/en active Active
- 2008-08-05 KR KR1020107006496A patent/KR101539250B1/en active IP Right Grant
- 2008-08-13 TW TW097130802A patent/TWI464833B/en active
-
2010
- 2010-03-03 US US12/717,012 patent/US8193622B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6133634A (en) * | 1998-08-05 | 2000-10-17 | Fairchild Semiconductor Corporation | High performance flip chip package |
US6040626A (en) * | 1998-09-25 | 2000-03-21 | International Rectifier Corp. | Semiconductor package |
US6307755B1 (en) * | 1999-05-27 | 2001-10-23 | Richard K. Williams | Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3584832A1 (en) * | 2018-06-20 | 2019-12-25 | Nexperia B.V. | A lead frame assembly for a semiconductor device |
US10957632B2 (en) | 2018-06-20 | 2021-03-23 | Nexperia B.V. | Lead frame assembly for a semiconductor device |
EP4148779A1 (en) * | 2021-09-14 | 2023-03-15 | Nexperia B.V. | A semiconductor device and a method of manufacture |
Also Published As
Publication number | Publication date |
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TWI464833B (en) | 2014-12-11 |
TW200915498A (en) | 2009-04-01 |
DE112008002338T5 (en) | 2010-07-08 |
US8193622B2 (en) | 2012-06-05 |
KR20100061700A (en) | 2010-06-08 |
CN101796637A (en) | 2010-08-04 |
CN101796637B (en) | 2012-05-30 |
US20090057852A1 (en) | 2009-03-05 |
US20100155913A1 (en) | 2010-06-24 |
KR101539250B1 (en) | 2015-07-24 |
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