WO2009042072A3 - Polishing composition and method utilizing abrasive particles treated with an aminosilane - Google Patents

Polishing composition and method utilizing abrasive particles treated with an aminosilane Download PDF

Info

Publication number
WO2009042072A3
WO2009042072A3 PCT/US2008/010896 US2008010896W WO2009042072A3 WO 2009042072 A3 WO2009042072 A3 WO 2009042072A3 US 2008010896 W US2008010896 W US 2008010896W WO 2009042072 A3 WO2009042072 A3 WO 2009042072A3
Authority
WO
WIPO (PCT)
Prior art keywords
abrasive particles
polishing composition
aminosilane
method utilizing
particles treated
Prior art date
Application number
PCT/US2008/010896
Other languages
French (fr)
Other versions
WO2009042072A2 (en
Inventor
Jeffrey Dysard
Sriram Anjur
Steven Grumbine
Daniela White
William Ward
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to EP08834266.2A priority Critical patent/EP2197972B1/en
Priority to CN2008801073426A priority patent/CN101802125B/en
Priority to KR1020107008621A priority patent/KR101232585B1/en
Priority to JP2010525837A priority patent/JP5519507B2/en
Publication of WO2009042072A2 publication Critical patent/WO2009042072A2/en
Publication of WO2009042072A3 publication Critical patent/WO2009042072A3/en
Priority to IL203477A priority patent/IL203477A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Abstract

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
PCT/US2008/010896 2007-09-21 2008-09-19 Polishing composition and method utilizing abrasive particles treated with an aminosilane WO2009042072A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08834266.2A EP2197972B1 (en) 2007-09-21 2008-09-19 Polishing composition and method utilizing abrasive particles treated with an aminosilane
CN2008801073426A CN101802125B (en) 2007-09-21 2008-09-19 Polishing composition and method utilizing abrasive particles treated with an aminosilane
KR1020107008621A KR101232585B1 (en) 2007-09-21 2008-09-19 Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP2010525837A JP5519507B2 (en) 2007-09-21 2008-09-19 Polishing composition and polishing method using abrasive particles treated with aminosilane
IL203477A IL203477A (en) 2007-09-21 2010-01-20 Polishing composition and method utilizing abrasive particles treated with an aminosilane

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97434007P 2007-09-21 2007-09-21
US60/974,340 2007-09-21

Publications (2)

Publication Number Publication Date
WO2009042072A2 WO2009042072A2 (en) 2009-04-02
WO2009042072A3 true WO2009042072A3 (en) 2009-06-18

Family

ID=40472131

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/010896 WO2009042072A2 (en) 2007-09-21 2008-09-19 Polishing composition and method utilizing abrasive particles treated with an aminosilane

Country Status (9)

Country Link
US (1) US7994057B2 (en)
EP (1) EP2197972B1 (en)
JP (1) JP5519507B2 (en)
KR (1) KR101232585B1 (en)
CN (1) CN101802125B (en)
IL (1) IL203477A (en)
MY (1) MY147729A (en)
TW (1) TWI428436B (en)
WO (1) WO2009042072A2 (en)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG184772A1 (en) * 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5209284B2 (en) * 2007-11-28 2013-06-12 日本ミクロコーティング株式会社 Abrasive sheet and method for producing abrasive sheet
JP5441362B2 (en) * 2008-05-30 2014-03-12 富士フイルム株式会社 Polishing liquid and polishing method
JP5843613B2 (en) 2009-01-20 2016-01-13 キャボット コーポレイションＣａｂｏｔ Ｃｏｒｐｏｒａｔｉｏｎ Composition comprising silane-modified metal oxide
JP5601922B2 (en) * 2010-07-29 2014-10-08 富士フイルム株式会社 Polishing liquid and polishing method
JP5925454B2 (en) 2010-12-16 2016-05-25 花王株式会社 Polishing liquid composition for magnetic disk substrate
BR112013023983B1 (en) * 2011-03-25 2021-03-16 Akzo Nobel Chemicals International B.V alkyd-based coating composition
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
JP6272842B2 (en) * 2012-06-11 2018-01-31 キャボット マイクロエレクトロニクス コーポレイション Compositions and methods for polishing molybdenum
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
SG11201601847WA (en) * 2013-09-20 2016-04-28 Fujimi Inc Polishing composition
CN104745083B (en) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 A kind of chemical mechanical polishing liquid and polishing method
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) * 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) * 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
TWI561620B (en) * 2014-06-20 2016-12-11 Cabot Microelectronics Corp Cmp slurry compositions and methods for aluminum polishing
KR102458508B1 (en) * 2014-06-25 2022-10-26 씨엠씨 머티리얼즈, 인코포레이티드 Colloidal silica chemical-mechanical polishing concentrate
SG11201610332PA (en) 2014-06-25 2017-02-27 Cabot Microelectronics Corp Copper barrier chemical-mechanical polishing composition
US9567491B2 (en) 2014-06-25 2017-02-14 Cabot Microelectronics Corporation Tungsten chemical-mechanical polishing composition
CN105802508B (en) * 2014-12-29 2020-03-13 安集微电子（上海）有限公司 Application of azole compound in improving stability of chemical mechanical polishing solution
CN105802510A (en) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 Chemical mechanical polishing liquid and application thereof
KR102632890B1 (en) * 2015-03-30 2024-02-05 가부시키가이샤 후지미인코퍼레이티드 polishing composition
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
US9771496B2 (en) 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
KR102545800B1 (en) * 2015-12-04 2023-06-20 솔브레인 주식회사 Composition for etching and manufacturing method of semiconductor device using the same
TWI738743B (en) 2016-03-23 2021-09-11 美商道康寧公司 Metal-polyorganosiloxanes
US20190112196A1 (en) * 2016-03-30 2019-04-18 Fujimi Incorporated Cation-modified silica raw material dispersion
SG11201809942WA (en) * 2016-06-07 2018-12-28 Cabot Microelectronics Corp Chemical-mechanical processing slurry and methods for processing a nickel substrate surface
US9783702B1 (en) * 2016-10-19 2017-10-10 Rohm And Haas Electronic Materials Cmp Holdings Inc. Aqueous compositions of low abrasive silica particles
US10221336B2 (en) * 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190185713A1 (en) * 2017-12-14 2019-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp slurry compositions containing silica with trimethylsulfoxonium cations
JP7028120B2 (en) * 2018-09-20 2022-03-02 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing, its manufacturing method, and chemical mechanical polishing method.
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US20200172761A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for silicon nitride cmp
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
US10781343B2 (en) * 2019-01-24 2020-09-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Acid polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7285113B2 (en) * 2019-03-29 2023-06-01 株式会社フジミインコーポレーテッド Polishing composition
JP7234008B2 (en) * 2019-03-29 2023-03-07 株式会社フジミインコーポレーテッド Polishing composition
KR20210095465A (en) 2020-01-23 2021-08-02 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
EP4157955A1 (en) * 2020-05-29 2023-04-05 Versum Materials US, LLC Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
KR102638622B1 (en) * 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 Polishing compostion for semiconductor process and method for manufacturing semiconductor device by using the same
TW202334371A (en) 2021-09-30 2023-09-01 日商福吉米股份有限公司 Polishing composition and polishing method using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6390890B1 (en) * 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6786945B2 (en) * 2001-02-20 2004-09-07 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
EP0449263B1 (en) * 1990-03-28 1996-06-12 Japan Synthetic Rubber Co., Ltd. Polysiloxane-composite polymer particles
US5174813A (en) * 1991-11-07 1992-12-29 Dow Corning Corporation Polish containing derivatized amine functional organosilicon compounds
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5428107A (en) * 1993-10-29 1995-06-27 Rohm And Haas Company Silane-modified floor finish vehicles
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (en) * 1994-02-21 2002-04-02 株式会社東芝 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (en) * 1994-04-14 2002-08-12 株式会社日立製作所 Polishing method
JP3303544B2 (en) * 1994-07-27 2002-07-22 ソニー株式会社 Semiconductor device manufacturing method, wiring layer surface polishing slurry, and wiring layer surface polishing slurry manufacturing method
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5645736A (en) * 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
ES2187960T3 (en) * 1997-04-18 2003-06-16 Cabot Microelectronics Corp STAMP TO POLISH FOR A SEMI-CONDUCTOR SUBSTRATE.
US5770103A (en) * 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6372648B1 (en) * 1998-11-16 2002-04-16 Texas Instruments Incorporated Integrated circuit planarization method
AU5785700A (en) * 1999-07-07 2001-01-30 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles
JP4151179B2 (en) * 1999-11-22 2008-09-17 Ｊｓｒ株式会社 Method for producing composite particles, composite particles produced by this method, and chemical mechanical polishing aqueous dispersion containing composite particles
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP4428495B2 (en) 2001-03-29 2010-03-10 電気化学工業株式会社 Abrasive and abrasive slurry
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
SE0102930D0 (en) * 2001-09-04 2001-09-04 Ericsson Telefon Ab L M Antenna system and net drift verification
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
TW539741B (en) 2002-04-26 2003-07-01 Everlight Chem Ind Corp Method for manufacturing cerium dioxide powder
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
DE10320779A1 (en) * 2003-05-09 2004-11-18 Degussa Ag Corrosion protection on metals
DE102004004147A1 (en) 2004-01-28 2005-08-18 Degussa Ag Surface-modified silica-sheathed metalloid / metal oxides
JP4954462B2 (en) * 2004-10-19 2012-06-13 株式会社フジミインコーポレーテッド Composition for selective polishing of silicon nitride film and polishing method using the same
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2006147993A (en) 2004-11-24 2006-06-08 Hitachi Chem Co Ltd Polishing solution for cmp and polishing method
JP2006176804A (en) * 2004-12-21 2006-07-06 Fuji Electric Holdings Co Ltd Method for producing porous alumina
US7732393B2 (en) 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
JP2007273910A (en) * 2006-03-31 2007-10-18 Fujifilm Corp Polishing composition liquid
JP2008288398A (en) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd Semiconductor wafer polishing composition, manufacturing method thereof, and polish treatment method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6390890B1 (en) * 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6786945B2 (en) * 2001-02-20 2004-09-07 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate

Also Published As

Publication number Publication date
US7994057B2 (en) 2011-08-09
IL203477A (en) 2013-03-24
KR101232585B1 (en) 2013-02-12
WO2009042072A2 (en) 2009-04-02
MY147729A (en) 2013-01-15
JP2010541203A (en) 2010-12-24
JP5519507B2 (en) 2014-06-11
TWI428436B (en) 2014-03-01
US20090081871A1 (en) 2009-03-26
KR20100074207A (en) 2010-07-01
TW200918658A (en) 2009-05-01
CN101802125A (en) 2010-08-11
CN101802125B (en) 2013-11-06
EP2197972A2 (en) 2010-06-23
EP2197972B1 (en) 2020-04-01
EP2197972A4 (en) 2011-06-01

Similar Documents

Publication Publication Date Title
WO2009042072A3 (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
WO2009042073A3 (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
MY146591A (en) Polishing composition containing polyether amine
WO2009111001A3 (en) Silicon carbide polishing method utilizing water-soluble oxidizers
TW200730583A (en) Siloxane resin composition and the method for manufacturing the same
WO2008079934A3 (en) Low corrosion abrasive articles and methods for forming same
WO2009154903A3 (en) Methods for processing substrates having an antimicrobial coating
WO2009143376A3 (en) Ionic liquids and methods for using the same
WO2006113266A3 (en) Coated filter media
WO2012013361A3 (en) A polymeric substrate having a glass-like surface and a chip made of said polymeric substrate
WO2011007286A3 (en) Multiple component materials having a color-changing composition
WO2009053580A3 (en) Liquid resin composition for abrasive articles
WO2014160906A3 (en) Urethane based polymeric extenders for compositions to modify the surface properties of substrates
TW201612292A (en) Polishing agent and fabricating method thereof, method for polishing substrate, and polishing agent set and fabricating method thereof
EP2357059A3 (en) Method for chemical mechanical planarization of a tungsten-containing substrate
WO2011007285A3 (en) Multiple component materials having a color-changing composition
WO2007053326A3 (en) Compositions containing a silanol functional polymer and hydrophilic coating films
WO2006118903A3 (en) Microporous article having metallic nanoparticle coating
WO2009007920A3 (en) Delivery systems for delivering functional compounds to substrates and processes of using the same
WO2009037600A3 (en) Solid substrate with surface bound molecules and methods for producing and using the same
WO2009008993A3 (en) Silcon-transition metal reaction products for coating substrates
WO2006132905A3 (en) Polishing composition and method for defect improvement by reduced particle stiction on copper surface
WO2009085164A3 (en) Halide anions for metal removal rate control
WO2010080613A3 (en) Coated flow-through substrates and methods for making and using them
MY151925A (en) Silicon oxide polishing method utilizing colloidal silica

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880107342.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08834266

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 203477

Country of ref document: IL

WWE Wipo information: entry into national phase

Ref document number: 2010525837

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008834266

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107008621

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: PI 2010001235

Country of ref document: MY