WO2009051944A3 - Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells - Google Patents
Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells Download PDFInfo
- Publication number
- WO2009051944A3 WO2009051944A3 PCT/US2008/077383 US2008077383W WO2009051944A3 WO 2009051944 A3 WO2009051944 A3 WO 2009051944A3 US 2008077383 W US2008077383 W US 2008077383W WO 2009051944 A3 WO2009051944 A3 WO 2009051944A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory cells
- methods
- embodiments include
- charge
- electronic systems
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000007769 metal material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08838789A EP2198457A4 (en) | 2007-10-12 | 2008-09-23 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
CN2008801110603A CN101821849B (en) | 2007-10-12 | 2008-09-23 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
JP2010528931A JP2010541296A (en) | 2007-10-12 | 2008-09-23 | Memory cell, electronic system, method for forming memory cell, and method for programming memory cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/871,339 | 2007-10-12 | ||
US11/871,339 US7898850B2 (en) | 2007-10-12 | 2007-10-12 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009051944A2 WO2009051944A2 (en) | 2009-04-23 |
WO2009051944A3 true WO2009051944A3 (en) | 2009-06-04 |
Family
ID=40534058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/077383 WO2009051944A2 (en) | 2007-10-12 | 2008-09-23 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
Country Status (7)
Country | Link |
---|---|
US (2) | US7898850B2 (en) |
EP (1) | EP2198457A4 (en) |
JP (1) | JP2010541296A (en) |
KR (1) | KR101082220B1 (en) |
CN (1) | CN101821849B (en) |
TW (1) | TWI373846B (en) |
WO (1) | WO2009051944A2 (en) |
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2007
- 2007-10-12 US US11/871,339 patent/US7898850B2/en active Active
-
2008
- 2008-09-23 CN CN2008801110603A patent/CN101821849B/en active Active
- 2008-09-23 EP EP08838789A patent/EP2198457A4/en not_active Withdrawn
- 2008-09-23 JP JP2010528931A patent/JP2010541296A/en not_active Withdrawn
- 2008-09-23 WO PCT/US2008/077383 patent/WO2009051944A2/en active Application Filing
- 2008-09-23 KR KR1020107010498A patent/KR101082220B1/en active IP Right Grant
- 2008-10-02 TW TW097137966A patent/TWI373846B/en active
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2011
- 2011-02-10 US US13/024,903 patent/US8228743B2/en active Active
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KR20070014593A (en) * | 2005-07-29 | 2007-02-01 | 강윤규 | Slide open and closing apparatus of sliding mobile phone |
US20070052011A1 (en) * | 2005-08-24 | 2007-03-08 | Micron Technology, Inc. | Scalable multi-functional and multi-level nano-crystal non-volatile memory device |
Also Published As
Publication number | Publication date |
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US20110133268A1 (en) | 2011-06-09 |
US20090097320A1 (en) | 2009-04-16 |
JP2010541296A (en) | 2010-12-24 |
EP2198457A2 (en) | 2010-06-23 |
KR20100071101A (en) | 2010-06-28 |
EP2198457A4 (en) | 2011-01-05 |
WO2009051944A2 (en) | 2009-04-23 |
CN101821849B (en) | 2013-06-12 |
KR101082220B1 (en) | 2011-11-09 |
TWI373846B (en) | 2012-10-01 |
CN101821849A (en) | 2010-09-01 |
US7898850B2 (en) | 2011-03-01 |
US8228743B2 (en) | 2012-07-24 |
TW200935606A (en) | 2009-08-16 |
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