WO2009064365A3 - Compositions and methods for ruthenium and tantalum barrier cmp - Google Patents
Compositions and methods for ruthenium and tantalum barrier cmp Download PDFInfo
- Publication number
- WO2009064365A3 WO2009064365A3 PCT/US2008/012564 US2008012564W WO2009064365A3 WO 2009064365 A3 WO2009064365 A3 WO 2009064365A3 US 2008012564 W US2008012564 W US 2008012564W WO 2009064365 A3 WO2009064365 A3 WO 2009064365A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chemical
- mechanical polishing
- polishing composition
- ruthenium
- compositions
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
- C01G55/004—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010533104A JP5449180B2 (en) | 2007-11-09 | 2008-11-07 | Compositions and methods for ruthenium and tantalum barrier CMP |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/937,804 | 2007-11-09 | ||
US11/937,804 US20090124173A1 (en) | 2007-11-09 | 2007-11-09 | Compositions and methods for ruthenium and tantalum barrier cmp |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009064365A2 WO2009064365A2 (en) | 2009-05-22 |
WO2009064365A3 true WO2009064365A3 (en) | 2009-08-06 |
Family
ID=40624144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/012564 WO2009064365A2 (en) | 2007-11-09 | 2008-11-07 | Compositions and methods for ruthenium and tantalum barrier cmp |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090124173A1 (en) |
JP (1) | JP5449180B2 (en) |
KR (1) | KR101557514B1 (en) |
TW (1) | TWI392727B (en) |
WO (1) | WO2009064365A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
JP6050934B2 (en) | 2011-11-08 | 2016-12-21 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method using the same, and substrate manufacturing method |
US8778212B2 (en) | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
CN103897602B (en) * | 2012-12-24 | 2017-10-13 | 安集微电子(上海)有限公司 | A kind of chemical mechanical polishing liquid and polishing method |
US9196283B1 (en) | 2013-03-13 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetic recording transducer using a chemical buffer |
CN112442374A (en) * | 2013-07-31 | 2021-03-05 | 恩特格里斯公司 | Aqueous formulations with Cu/W compatibility for removal of metal hardmask and post-etch residues |
US9299585B2 (en) | 2014-07-28 | 2016-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing substrates containing ruthenium and copper |
JPWO2016140246A1 (en) * | 2015-03-04 | 2017-12-07 | 日立化成株式会社 | Polishing liquid for CMP and polishing method using the same |
US10937691B2 (en) * | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
JP7219061B2 (en) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | Composition for removing ruthenium |
US11499072B2 (en) | 2019-08-30 | 2022-11-15 | Saint-Gobain Ceramics & Plastics, Inc. | Composition and method for conducting a material removing operation |
WO2021041699A1 (en) * | 2019-08-30 | 2021-03-04 | Saint-Gobain Ceramics & Plastics, Inc. | Fluid composition and method for conducting a material removing operation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6491837B1 (en) * | 2000-01-18 | 2002-12-10 | Praxair S.T. Technology, Inc. | Polishing slurry |
US20060030158A1 (en) * | 2002-01-22 | 2006-02-09 | Cabot Microelectronics | Compositions and methods for tantalum CMP |
US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5405646A (en) * | 1992-10-14 | 1995-04-11 | Nanis; Leonard | Method of manufacture thin film magnetic disk |
US6461227B1 (en) * | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
US6692546B2 (en) * | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
US7029373B2 (en) * | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
US6800218B2 (en) * | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
WO2003020839A1 (en) * | 2001-09-03 | 2003-03-13 | Showa Denko K.K. | Polishing composition |
US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
JP3749867B2 (en) * | 2002-03-08 | 2006-03-01 | 株式会社東芝 | Aluminum-based metal polishing liquid and method for manufacturing semiconductor device |
US6604987B1 (en) * | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
WO2004101222A2 (en) * | 2003-05-12 | 2004-11-25 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same |
US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
-
2007
- 2007-11-09 US US11/937,804 patent/US20090124173A1/en not_active Abandoned
-
2008
- 2008-11-07 JP JP2010533104A patent/JP5449180B2/en active Active
- 2008-11-07 KR KR1020107012588A patent/KR101557514B1/en active IP Right Grant
- 2008-11-07 WO PCT/US2008/012564 patent/WO2009064365A2/en active Application Filing
- 2008-11-07 TW TW097143226A patent/TWI392727B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6491837B1 (en) * | 2000-01-18 | 2002-12-10 | Praxair S.T. Technology, Inc. | Polishing slurry |
US20060030158A1 (en) * | 2002-01-22 | 2006-02-09 | Cabot Microelectronics | Compositions and methods for tantalum CMP |
US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
Also Published As
Publication number | Publication date |
---|---|
KR20100106357A (en) | 2010-10-01 |
JP2011503873A (en) | 2011-01-27 |
TW200938615A (en) | 2009-09-16 |
KR101557514B1 (en) | 2015-10-06 |
TWI392727B (en) | 2013-04-11 |
US20090124173A1 (en) | 2009-05-14 |
WO2009064365A2 (en) | 2009-05-22 |
JP5449180B2 (en) | 2014-03-19 |
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