WO2009088882A3 - Edge-contacted vertical carbon nanotube transistor - Google Patents

Edge-contacted vertical carbon nanotube transistor Download PDF

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Publication number
WO2009088882A3
WO2009088882A3 PCT/US2008/088572 US2008088572W WO2009088882A3 WO 2009088882 A3 WO2009088882 A3 WO 2009088882A3 US 2008088572 W US2008088572 W US 2008088572W WO 2009088882 A3 WO2009088882 A3 WO 2009088882A3
Authority
WO
WIPO (PCT)
Prior art keywords
edge
carbon nanotube
nanotube transistor
vertical carbon
contacted vertical
Prior art date
Application number
PCT/US2008/088572
Other languages
French (fr)
Other versions
WO2009088882A2 (en
Inventor
Brian Hunt
James Hartman
Michael J. Bronikowski
Eric Wong
Brian Y. Lim
Original Assignee
Atomate Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atomate Corporation filed Critical Atomate Corporation
Priority to JP2010540944A priority Critical patent/JP2011522394A/en
Priority to EP08869424A priority patent/EP2238611A2/en
Priority to CN200880123544XA priority patent/CN101933125A/en
Publication of WO2009088882A2 publication Critical patent/WO2009088882A2/en
Publication of WO2009088882A3 publication Critical patent/WO2009088882A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Abstract

A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
PCT/US2008/088572 2007-12-31 2008-12-30 Edge-contacted vertical carbon nanotube transistor WO2009088882A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010540944A JP2011522394A (en) 2007-12-31 2008-12-30 End contact type vertical carbon nanotube transistor
EP08869424A EP2238611A2 (en) 2007-12-31 2008-12-30 Edge-contacted vertical carbon nanotube transistor
CN200880123544XA CN101933125A (en) 2007-12-31 2008-12-30 Edge-contacted vertical carbon nanotube transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1842607P 2007-12-31 2007-12-31
US61/018,426 2007-12-31

Publications (2)

Publication Number Publication Date
WO2009088882A2 WO2009088882A2 (en) 2009-07-16
WO2009088882A3 true WO2009088882A3 (en) 2009-09-24

Family

ID=40797039

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/088572 WO2009088882A2 (en) 2007-12-31 2008-12-30 Edge-contacted vertical carbon nanotube transistor

Country Status (6)

Country Link
US (2) US7960713B2 (en)
EP (1) EP2238611A2 (en)
JP (1) JP2011522394A (en)
KR (1) KR20100110853A (en)
CN (1) CN101933125A (en)
WO (1) WO2009088882A2 (en)

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Also Published As

Publication number Publication date
US20090166686A1 (en) 2009-07-02
KR20100110853A (en) 2010-10-13
WO2009088882A2 (en) 2009-07-16
JP2011522394A (en) 2011-07-28
CN101933125A (en) 2010-12-29
EP2238611A2 (en) 2010-10-13
US7960713B2 (en) 2011-06-14
US20120138902A1 (en) 2012-06-07

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