WO2009097164A1 - System and method for cooling semiconductor coated hot glass sheets - Google Patents

System and method for cooling semiconductor coated hot glass sheets Download PDF

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Publication number
WO2009097164A1
WO2009097164A1 PCT/US2009/030072 US2009030072W WO2009097164A1 WO 2009097164 A1 WO2009097164 A1 WO 2009097164A1 US 2009030072 W US2009030072 W US 2009030072W WO 2009097164 A1 WO2009097164 A1 WO 2009097164A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat absorbing
radiant heat
cooling
semiconductor coated
glass sheets
Prior art date
Application number
PCT/US2009/030072
Other languages
French (fr)
Inventor
James E. Heider
Gary T. Faykosh
Original Assignee
Willard & Kelsey Solar Group, Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Willard & Kelsey Solar Group, Llc filed Critical Willard & Kelsey Solar Group, Llc
Priority to EP09705621A priority Critical patent/EP2247542A4/en
Priority to CN2009801072767A priority patent/CN101959810A/en
Publication of WO2009097164A1 publication Critical patent/WO2009097164A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
    • C03B29/06—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
    • C03B29/08—Glass sheets
    • C03B29/10—Glass sheets being in a vertical position
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B25/00—Annealing glass products
    • C03B25/04—Annealing glass products in a continuous way
    • C03B25/06—Annealing glass products in a continuous way with horizontal displacement of the glass products
    • C03B25/08—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B25/00—Annealing glass products
    • C03B25/04—Annealing glass products in a continuous way
    • C03B25/06—Annealing glass products in a continuous way with horizontal displacement of the glass products
    • C03B25/08—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets
    • C03B25/087—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets being in a vertical position
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
    • C03B29/06—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
    • C03B29/08—Glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
    • C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
    • C03B35/20—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by gripping tongs or supporting frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • This invention relates to a system and a method for cooling semiconductor coated hot glass sheets.
  • An object of the present invention is to provide an improved system for cooling semiconductor coated hot glass sheets.
  • the system of the invention for cooling semiconductor coated hot glass sheets includes a housing defining a vacuum chamber and also includes a conveyor for conveying hot glass sheets freshly coated with semiconductor material through the vacuum chamber.
  • a cooling station includes a radiant heat absorber having radiant heat absorbing members spaced from each other in an opposed relationship between which the semiconductor coated glass sheets are conveyed so the radiant heat absorbing members absorb radiant heat therefrom to provide cooling.
  • the conveyor has upper supports that support upper extremities of the semiconductor coated glass sheets which depend downwardly therefrom in a vertical orientation during the conveyance through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber.
  • the radiant heat absorbing members of the radiant heat absorber of this embodiment have generally continuous planar heat absorbing surfaces that extend vertically and oppose each other in a spaced and parallel relationship with the vertically oriented semiconductor coated glass sheets being conveyed therebetween for cooling.
  • the conveyor includes horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber.
  • the radiant heat absorber of this embodiment includes upper and lower heat absorbing members including planar heat absorbing surfaces, with the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and with the lower heat absorbing member including spaced portions located between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets.
  • the lower heat absorbing portion as disclosed has a one-piece unitary construction including a lower base from which its spaced portions project upwardly between the conveyor rolls.
  • the radiant heat absorbers may be graphite or a refractory that is preferably alpha state silicon carbide. More specifically, the first embodiment is disclosed with its conveyor provided with upper supports that support upper extremities of the semiconductor coated glass sheets which depend downwardly therefrom in a vertical orientation during the conveyance through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, and the radiant heat absorbing members of the radiant heat absorber are made from a refractory material and have generally continuous planar heat absorbing surfaces that extend vertically and oppose each other in a spaced and parallel relationship with the vertically oriented semiconductor coated glass sheets being conveyed therebetween for cooling.
  • the second embodiment as disclosed has its conveyor provided with horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, with the radiant heat absorber including upper and lower heat absorbing members made from a refractory material and including planar heat absorbing surfaces, specifically with the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and with the lower heat absorbing member including spaced portions located between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets.
  • the refractory lower heat absorbing portion is disclosed as having a one-piece unitary construction including a lower refractory base from which its refractory spaced portions project upwardly between the conveyor rolls.
  • Another object of the invention is to provide an improved method for cooling a semiconductor coated hot glass sheet.
  • the method of the invention for cooling a semiconductor coated hot glass sheet is performed by conveying a hot glass sheet newly coated with semiconductor material within a vacuum chamber to between a pair of spaced radiant heat absorbing members that receive radiant heat from the coated glass sheet to provide cooling.
  • the semiconductor coated hot glass sheet is conveyed in a vertically extending orientation supported by the conveyor at an upper extremity of the coated glass sheet and conveyed between vertically extending radiant heat absorbing members for the cooling.
  • the semiconductor coated hot glass sheet is conveyed in a horizontally extending orientation on rolls of a roll conveyor to between upper and lower radiant heat absorbing members with the semiconductor material facing upwardly toward the upper heat absorbing member.
  • the semiconductor coated hot glass sheet is cooled from above by an upper radiant heat absorbing member that has a continuous downwardly facing surface and is cooled from below by a lower radiant heat absorbing member that has spaced portions projecting upwardly between the conveyor rolls.
  • the radiant heat absorbing members may be made of a refractory material, specifically alpha state silicon carbide.
  • FIGURE 1 is a perspective view of one embodiment of a system that cools semiconductor coated hot glass sheets in accordance with the present invention.
  • FIGURE 2 is a perspective view illustrating a drive mechanism and shuttle utilized to suspend the glass sheets vertically from upper extremities thereof and provide conveyance thereof through the system.
  • FIGURE 3 is a partial view illustrating the manner in which magnetic rotary drive members support and rotatively drive the shuttle and the vertical glass sheet suspended from the shuttle.
  • FIGURE 4 is a top schematic view of the system illustrating its modular construction and the provision of a pair of side-by-side conveyors that convey the glass sheets vertically through a housing vacuum chamber of the system for the semiconductor deposition.
  • FIGURE 5 is a sectional view through a glass sheet on which semiconductor material has been coated with the semiconductor material thicknesses exaggerated for purposes of illustration.
  • FIGURE 6 is a schematic plan view illustrating radiant heaters in a heating station of the furnace for providing radiant heating of the vertically conveyed glass sheet in preparation for the semiconductor deposition.
  • FIGURE 7 is a schematic top plan view illustrating the vertical glass sheet during conveyance within a deposition station where the semiconductor material is deposited.
  • FIGURE 8 is a schematic top plan view illustrating the semiconductor coated glass sheet as it is conveyed through a cooling station where radiant heat absorbers provide cooling of the glass sheet.
  • FIGURE 9 is an elevational view illustrating one manner in which an elongated glass sheet is conveyed with its longer axis horizontal.
  • FIGURE 10 is a view similar to Figure 9 illustrating another way in which the elongated glass sheet is conveyed with its longer axis vertical.
  • FIGURES 10a and 10b are side and end views of the resultant glass sheet regardless of whether conveyed as shown in Figure 9 or shown in Figure 10 and illustrates the resultant upper extremity 40 as including tong marks 44' on both surfaces of the glass sheet.
  • FIGURE 11 is a top plan view of another embodiment of a system that cools semiconductor coated hot glass sheets in accordance with the present invention.
  • FIGURE 12 is a sectional view taken along the direction of line 12-12 in Figure 11 through a cooling station of the system to illustrate the manner in which the semiconductor coated glass sheet is conveyed horizontally on a roll conveyor between radiant heat absorbing members of a radiant heat absorber.
  • one embodiment of a system 20 for cooling semiconductor coated hot glass sheets is generally indicated by 20 and is operated to perform the method for cooling hot glass sheets with a semiconductor material in accordance with the invention.
  • the system and the method will be described in an integrated manner to facilitate an understanding of all aspects of the invention.
  • the system 20 includes an elongated housing collectively indicated by 22 and having a vacuum chamber 24 in which the semiconductor coating takes place.
  • An entry load lock station 26 of the system provides provision for glass sheet entry into the vacuum chamber 24 and an exit load lock station 28 provides for exiting of the coated glass sheet out of the vacuum chamber 24 after the coating.
  • the housing includes a heating station 30 for heating glass sheets, a pair of deposition stations 32 and 34 for supplying semiconductor material for chemical vapor deposition, and a cooling station 36 all of which are hereinafter described in greater detail.
  • the system 20 as shown in Figure 4 includes a pair of conveyors 38 extending alongside each other in a side-by-side relationship through the elongated housing 22.
  • Each conveyor 38 supports upper extremities 40 of vertical glass sheets G as shown in Figure 2 and provides suspended conveyance of these vertical glass sheets through the system. This conveyance is initially into and through the entry load lock station 26 into the housing vacuum chamber 24, through the heating station 30 for heating of the glass sheets, thereafter through the two deposition stations 32 and 34 for deposition of semiconductor material on the glass sheets, then to the cooling station 36, and finally out of the vacuum chamber 24 through the exit load lock station 28 for delivery of the coated glass sheets.
  • each conveyor 38 includes shuttles 42 for supporting the upper extremities 40 of the vertical glass sheets, specifically by tongs 44 shown in Figure 2.
  • the tongs 44 may be of the type disclosed by
  • Each conveyor 38 shown in Figure 4 also includes a drive collectively indicated by 46 and having drive mechanisms 48 located along the system for conveying the shuttles and the vertical glass sheets suspended therefrom through the system.
  • the drive 46 through its drive mechanisms 48 conveys the shuttles first into the entry load lock station 26 and from there into the vacuum chamber 24 of the elongated housing 22 for conveyance through the heating station
  • Any type of suitable return conveyors 50 can be utilized to convey the shuttles 42 after egress from the exit load lock station 28 back to the entry load lock station 26 for another cycle.
  • each shuttle 42 has an elongated shape and a downwardly depending support portion 52 ( Figure 2) with holes 54 spaced therealong to receive and support the tongs 44 at the appropriate locations for the particular length of glass sheet being conveyed so that the suspended support is generally adjacent the upstream and downstream ends 56 and 58 of the upper extremity 40 of the glass sheet G being conveyed.
  • the drive mechanisms 48 of the conveyor drive 46 each have an elongated shape and include rotary drive members
  • the rotary drive members 60 are supported on an elongated plate 62 by bearings 64 and are magnetic so as to provide the rotary driving of the shuttles 42 for the conveyance.
  • the shuttles 42 have upper support and drive surfaces 66 which are supported by the magnetic rotary drive members 60 that project downwardly through holes 68 in the plate 62 as shown in Figure 3 into supporting and driving contact with the upper shuttle surfaces 60.
  • the conveyor drive mechanisms 48 of the conveyor drive 46 as previously discussed are spaced along the length of the system and each has an associated electric drive motor 70 as shown in Figure 2 spaced outwardly of the housing 22 from the vacuum chamber 24 as shown schematically.
  • the shaft output of each drive motor 70 extends through a hermetically sealed bearing to one end of a drive shaft 72 of the adjacent magnetic rotary drive member 60, with the other end of the shaft being connected to a drive sprocket 74 for driving a continuous loop drive belt or chain 76 that drives another sprocket 74 on one end of the shaft 72 of the adjacent magnetic rotary drive member 60, and associated sprockets and continuous drive members on alternating sides of the drive mechanism 48 in turn provide rotary driving of all of the magnetic rotary drive members 60 in coordination with each other.
  • the semiconductor material deposition is performed on one surface of the glass sheet G which initially has a coating of tin oxide 78 that provides an electrical contact.
  • the first deposition station 32 provides a layer of cadmium sulfide 80 which is a N-type semiconductor and has a thickness on the order of about 0.15 microns.
  • a layer of cadmium telluride 82 is deposited over the cadmium sulfide layer 80 with a thickness on the order of about 3 microns to provide an I-type semiconductor.
  • the tin oxide layer 78, cadmium sulfide layer 80 and the cadmium telluride layer 82 can be separated into a plurality of cells and provided with another contact over the cadmium telluride layer 82 to function as a multi-cell photovoltaic panel for generating electricity from sunlight.
  • the system housing 22 schematically shown in Figure 4 has a modular construction including a number of housing modules 84 having opposite ends 85 connected to each other to provide the housing 22, which includes the heating station 30, the deposition stations 32 and 34, and the cooling station 36.
  • the conveyor drive 46 has one of the previously described drive mechanisms 48 extending along the length of each housing module 84 between its upstream and downstream ends to provide the conveyance of the shuttles 42 and the glass sheets suspended therefrom through the vacuum chamber of the system housing for the heating, deposition and cooling.
  • the entry and exit load lock stations 26 and 28 also each include an associated housing module 86 through which the conveyors 38 extend to provide the glass sheet conveyance into and out of the vacuum chamber 24 defined by the housing 22.
  • These load lock housings 86 each have entry and exit door structures 88 and 90 whose structure is hereinafter more fully described.
  • the entry door structure 88 of the entry load lock station 26 is opened to permit conveyance of a shuttle 42 and glass sheet suspended vertically therefrom into the associated housing 86 whereupon the entry door structure is closed and the entry load lock station is evacuated by a vacuum pump to provide a vacuum of about 20 Torr.
  • the exit door structure 98 is opened to permit the shuttle to be conveyed to the initial drive mechanism 48 of the heating station 30 with the shuttle bridging the drive mechanisms as it moves along from the entry load lock station into each housing module to the next through the heating station 30, depositions stations 32 and 34, and the cooling station 36.
  • the exit door structure 90 of the entry load lock station 26 is closed whereupon its housing module 86 is brought back to ambient pressure, and its entry door structure 88 is opened to permit conveyance of the next shuttle 42 and glass sheet suspended therefrom into the entry load lock station to initiate processing of the next cycle.
  • the shuttle approaches the exit load lock station 28 whose entry and exit door structures 88 and 90 shown in Figure 4 are closed as its housing module 86 is evacuated to a vacuum of about 20 Torr.
  • the entry door structure 88 of the exit load lock station 28 is then opened to permit the shuttle and suspended glass sheet conveyance into the exit load lock station 28 whereupon its entry door structure 88 is closed and its housing is brought to ambient pressure, and its exit door structure 90 is subsequently opened to permit conveyance of the shuttle and suspended glass sheet out of the system for delivery.
  • cooling station 36 as disclosed is located upstream from the exit load lock station 28 to facilitate the operation and common construction of both the entry and exit load lock stations 26 and 28. However, it is also possible for the cooling station to be located within the exit load lock station 28 even though the upstream location shown is preferred. Such cooling is important in reducing the temperature of the semiconductor material to below about 400 ° C before exposure to oxygen and any consequent reaction of the oxygen with the semiconductor material.
  • each shuttle has opposite lateral sides 92 and the drive mechanism plate 62 has angled sides 93 supporting failsafe rollers 94 positioned below the opposite lateral shuttle sides 92. While the magnetic rotary drive members 60 support the shuttle 42 just slightly above the failsafe rollers 94, these failsafe rollers 94 ensure that the shuttle 42 does not drop down under the force of gravity or otherwise.
  • each housing module 84 of the heating station includes radiant heaters 96 spaced on opposite sides of the vertically conveyed glass sheet, and these radiant heaters 96 are embodied by radiant heating slabs 98 that are oriented vertically in a spaced and parallel relationship to each other such that the vertically conveyed glass sheet moves therebetween. Any type of suitable position adjuster 100 may be utilized to adjust the radiant heater spacing to provide uniformity of the glass sheet from both its oppositely facing surfaces.
  • Each of the deposition stations 32 and 34 shown in Figure 4 has a construction like that shown in Figure 7 with its housing module 84 receiving a deposition module 102 and a vertically extending radiant heater 104 between which the glass sheet G is conveyed for deposition of the associated semiconductor material onto the glass sheet.
  • the radiant heater 104 like the radiant heater in the heating station, includes a vertically extending heating slab 106 whose position can be changed as necessary by an adjuster 108 to provide uniformity of the glass temperature during the deposition. It is also possible for the deposition module 102 to include a radiant heater incorporated therein in addition to having provision for supplying hot gas that is deposited as the semiconductor material.
  • the cooling station 36 whether located upstream from the exit load lock station 28 or within the exit load lock station includes a radiant heat absorber 110 that is shown in Figure 8 as including radiant heat absorbing members 112 extending vertically in a spaced and parallel relationship to each other and between which the freshly semiconductor coated vertical glass sheet is positioned for cooling.
  • the radiant heat absorbing members 112 have opposed generally continuous planar surfaces 113 at which the radiant heat is absorbed from the hot semiconductor coated glass sheet.
  • Adjusters 114 control the positioning between the radiant heat absorbing members 112 and the glass sheet G so as to provide uniformity of cooling.
  • Different materials may be utilized to provide the radiant heating slabs 98 in the heating station, any radiant heater of the deposition module 102 and the radiant heating slab 106 of each deposition station, and the radiant heat absorbing members 112 of the cooling station.
  • graphite is a relatively inexpensive material that can be utilized and has good thermal conductivity so as to provide uniformity and temperature throughout; however graphite oblates even in vacuum and is sensitive to oxygen.
  • Alpha state silicon carbide may also be utilized as it is non-porous, shock resistant and impervious to oxygen; however, it is also relatively expensive. It is possible to embed heater elements within the radiant heaters of the heating station and the deposition stations or to provide the radiant heat through the slab from heaters such as quartz tubes with Nichrome heating elements so that the slabs act as heat spreaders. Other radiant heater designs may also be possible.
  • each glass sheet can be conveyed within the housing modules in a single direction from the entrance end to the exit end, can be oscillated back and forth at each module in a forward and backward direction or can be moved forwardly a certain extent and then backward a lesser extent successively such as in a two steps forward and one step back manner.
  • elongated glass sheets G can be suspended by the tongs from associated shuttles 42 with their longer axes horizontal or vertical.
  • the vertical suspension will provide greater coating capability but requires a greater vertical height of the heating, coating and cooling station components.
  • the resultant glass sheet will have its upper extremity 40 deformed with tong marks 44' on both of the oppositely facing surfaces of the glass sheet.
  • These tong marks 44' result from the deformation provided by the tongs with the glass sheet heated.
  • Such tong marks 44' being located at the upper extremity are outside of the operational area of the semiconductor layers 80 and 82 over the tin oxide layer 78 as shown in Figure 5 and do not adversely affect the operation of the resultant glass sheet such as when used as a photovoltaic panel.
  • the vertical suspension at the upper extremity of the conveyed glass sheet while heated maintains planarity of the glass sheet and also facilitates uniform temperature heating without variations such as can result when heating on conveyor rolls whose radiation and conduction varies during the conveyance.
  • the glass sheet substrate is washed, to remove particulates and provide preparation for coating, with a suitable detergent that is then rinsed with deionized water to provide a mineral free surface after air drying.
  • a suitable laser station will imprint a code on the glass sheet for production control and location during processing.
  • the vacuum pump system is matched to the volume of the load lock chamber to provide a pump down time such as on the order of 21 seconds to 20 Torr. Conveyance into and out of each load lock station plus venting and pump down time amount to a 60 second total cycle time with the load lock chamber volume at 56 cubic feet, a pumping speed of 580 cubic feet per minute for the 21 second pump down time, 10 seconds for conveyance into the load lock station, 10 seconds for exiting, and 19 seconds to provide door actuation and atmospheric venting.
  • the glass sheet substrate will be heated to approximately 585 ° C in preparation for the initial semiconductor coating.
  • This heating by the radiant heaters 96 previously described in connection with Figure 6 will be provided with about 25 kilowatts per side in an initial zone and 16 kilowatts per side in subsequent zones with the radiant heat chamber being at approximately 680 ° C so as to provide the desired glass surface substrate temperature of 580 ° C in approximately 150 seconds.
  • the transport speed can be varied for the particular glass sheet being coated along with the necessary temperatures.
  • the hot gas suppled by the deposition module 102 shown in Figure 7 maintains the substrate at a uniform temperature in association with the backside radiant heater 104.
  • the vertical orientation eliminates the potential for pinholes, nucleated materials and condensed vapor from making contact with the glass sheet substrate. Uniformity of the film thickness is dependent upon the temperature of the glass sheet substrate and the source vapor geometry, and the electrical quality is dependent on the lack of voids or pre nucleated material that sticks to the surface.
  • the cadmium sulfide providing the N-layer is applied with the cadmium sulfide gas sublimed and heated to a temperature of 950 ° C. It is believed that the rate of coating will be about 1,000 angstrom per second to a total thickness of about 900 to 1,500 angstroms, and a suitable detection device within the deposition module will be utilized to scan the coating thickness.
  • the second deposition station 34 previously described in connection with Figure 4 provides the cadmium telluride layer which is a P-layer.
  • the glass sheet substrate temperature will be approximately 605 ° C
  • the cadmium telluride will be sublimed and heated to about 1050 ° C and the coating will be supplied through a variable aperture to control the rate of deposition which will be to a thickness of about 3 microns that is believed to be at a rate of 2.5 microns per second.
  • a suitable after cooler will provide cooling to about 50°C for handling.
  • the thickness of the cadmium telluride will then be tested to confirm correctness, a dilute aqueous solution of cadmium chloride is sprayed or rolled onto the semiconductor coatings and the glass sheet is then heated to about 400 ° C for about 15 minutes to facilitate the conversion of light to electricity.
  • the treated glass sheet is then washed with deionized water, rinsed and dried. Suitable laser scribing and processing then is utilized to then convert a semiconductor coated glass sheet to a photovoltaic panel.
  • FIG. 11 another embodiment of a system 20' for cooling semiconductor coated hot glass sheets is similar to the previously described system shown in Figures 1-10 except as will be noted and thus has like reference numerals applied to like components thereof and much of the prior description is applicable and thus will not be repeated.
  • System 20' shown in Figures 11 and 12 has a roll conveyor 116 including horizontal rolls 118 on which the glass sheet G is conveyed through the system for deposition of the semiconductor material on its upwardly facing surface.
  • the radiant heat absorber 110 of the cooling station 36 as shown in Figure 12 has upper and lower radiant heat absorbing members 112 U and 112, spaced from each other in an opposed relationship between which the roll conveyor 116 conveys the semiconductor coated glass sheet so the radiant heat absorbing members absorb radiant heat therefrom to provide cooling.
  • the upper and lower radiant heat absorbing members 112 U and 112 have planar heat absorbing surfaces 120 and 122 that face the conveyed glass sheet G from above and below respectively to provide the radiant cooling. More specifically, the downwardly facing planar surface 120 of the upper heat absorbing member 112 U is generally continuous.
  • the lower heat absorbing 112 has spaced portions 124 that project upwardly between the conveyor rolls 118 and define upwardly facing heat absorbing surface portions 126 of the surface 122 for providing radiant heat absorption from the lower surface of the glass sheet G.
  • the lower heat absorbing member 112 has a one-piece unitary construction including a lower base 128 from which the spaced portions 124 project upwardly to between the conveyor rolls 118.
  • the combined area of the lower spaced surface portions 126 is thus less than the total area of the upper continuous surface 120 and the upper glass surface radiates heat through the coated semiconductor layers while the lower glass surface has no such coating.
  • the lower glass sheet surface also radiates and conducts heat to the conveyor rolls 118.
  • Adjusters 114 permit adjustment of the heat absorbing members 112 U and 112, in order to provide equal cooling from above and below and thereby maintain glass planarity during the cooling.
  • the lower conveyor rolls 118 can advantageously be made by sinter bonded fused silica particles so as to have a low coefficient of thermal expansion and thereby prevent thermal warpage.
  • Both the upper and lower radiant heat absorbing members 112 U and 112, like the earlier described embodiment can be made from graphite or a refractory which preferably is alpha state silicon carbide.

Abstract

A system (20, 20') and method for cooling semiconductor coated hot glass sheets in a cooling station (36) within a vacuum chamber (24). The semiconductor coated hot glass sheets are conveyed between radiant heat absorbing members (112) of a radiant heat absorber (110) to provide the cooling. In one embodiment the glass sheets are conveyed vertically for the cooling and in another the glass sheets are conveyed horizontally.

Description

SYSTEM AND METHOD FOR COOLING SEMICONDUCTOR COATED HOT GLASS SHEETS
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a system and a method for cooling semiconductor coated hot glass sheets.
2. Background Art
Semiconductor devices such as photovoltaic panels have previously been constructed with glass sheet substrates on which semiconductor material is coated. See United States Patents: 5,016,562 Madan et al. ; 5,248,349 Foote et al. ;
5,372,646 Foote et al; 5,470,397 Foote et al. ; and 5,536,333 Foote et al. , all of which disclose horizontal rollers for conveying glass sheets during such coating.
Other prior art references noted during an investigation conducted in connection with the present invention include United States Patents 4,545,327 Campbell et al; 4,593,644 Hanak; 5,288,329 Nakamura et al; 6,013,134 Chu et al.; and 6,827,788 Takahashi as well as United States Published Patent Application US
2007/0137574.
SUMMARY OF THE INVENTION
An object of the present invention is to provide an improved system for cooling semiconductor coated hot glass sheets.
In carrying out the above object, the system of the invention for cooling semiconductor coated hot glass sheets includes a housing defining a vacuum chamber and also includes a conveyor for conveying hot glass sheets freshly coated with semiconductor material through the vacuum chamber. A cooling station includes a radiant heat absorber having radiant heat absorbing members spaced from each other in an opposed relationship between which the semiconductor coated glass sheets are conveyed so the radiant heat absorbing members absorb radiant heat therefrom to provide cooling.
In one disclosed embodiment of the system, the conveyor has upper supports that support upper extremities of the semiconductor coated glass sheets which depend downwardly therefrom in a vertical orientation during the conveyance through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber. The radiant heat absorbing members of the radiant heat absorber of this embodiment have generally continuous planar heat absorbing surfaces that extend vertically and oppose each other in a spaced and parallel relationship with the vertically oriented semiconductor coated glass sheets being conveyed therebetween for cooling.
In another disclosed embodiment of the system, the conveyor includes horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber. The radiant heat absorber of this embodiment includes upper and lower heat absorbing members including planar heat absorbing surfaces, with the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and with the lower heat absorbing member including spaced portions located between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets. Furthermore, the lower heat absorbing portion as disclosed has a one-piece unitary construction including a lower base from which its spaced portions project upwardly between the conveyor rolls.
In both embodiments, the radiant heat absorbers may be graphite or a refractory that is preferably alpha state silicon carbide. More specifically, the first embodiment is disclosed with its conveyor provided with upper supports that support upper extremities of the semiconductor coated glass sheets which depend downwardly therefrom in a vertical orientation during the conveyance through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, and the radiant heat absorbing members of the radiant heat absorber are made from a refractory material and have generally continuous planar heat absorbing surfaces that extend vertically and oppose each other in a spaced and parallel relationship with the vertically oriented semiconductor coated glass sheets being conveyed therebetween for cooling.
Also, the second embodiment as disclosed has its conveyor provided with horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, with the radiant heat absorber including upper and lower heat absorbing members made from a refractory material and including planar heat absorbing surfaces, specifically with the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and with the lower heat absorbing member including spaced portions located between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets. In addition, the refractory lower heat absorbing portion is disclosed as having a one-piece unitary construction including a lower refractory base from which its refractory spaced portions project upwardly between the conveyor rolls.
Another object of the invention is to provide an improved method for cooling a semiconductor coated hot glass sheet.
In carrying out the immediately preceding object, the method of the invention for cooling a semiconductor coated hot glass sheet is performed by conveying a hot glass sheet newly coated with semiconductor material within a vacuum chamber to between a pair of spaced radiant heat absorbing members that receive radiant heat from the coated glass sheet to provide cooling. In one practice of the method, the semiconductor coated hot glass sheet is conveyed in a vertically extending orientation supported by the conveyor at an upper extremity of the coated glass sheet and conveyed between vertically extending radiant heat absorbing members for the cooling.
In another practice of the method, the semiconductor coated hot glass sheet is conveyed in a horizontally extending orientation on rolls of a roll conveyor to between upper and lower radiant heat absorbing members with the semiconductor material facing upwardly toward the upper heat absorbing member. In this practice of the method, the semiconductor coated hot glass sheet is cooled from above by an upper radiant heat absorbing member that has a continuous downwardly facing surface and is cooled from below by a lower radiant heat absorbing member that has spaced portions projecting upwardly between the conveyor rolls.
In both practices of the method, the radiant heat absorbing members may be made of a refractory material, specifically alpha state silicon carbide.
The objects, features and advantages of the present invention are readily apparent from the detailed description of the preferred embodiment when taken in connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGURE 1 is a perspective view of one embodiment of a system that cools semiconductor coated hot glass sheets in accordance with the present invention.
FIGURE 2 is a perspective view illustrating a drive mechanism and shuttle utilized to suspend the glass sheets vertically from upper extremities thereof and provide conveyance thereof through the system. FIGURE 3 is a partial view illustrating the manner in which magnetic rotary drive members support and rotatively drive the shuttle and the vertical glass sheet suspended from the shuttle.
FIGURE 4 is a top schematic view of the system illustrating its modular construction and the provision of a pair of side-by-side conveyors that convey the glass sheets vertically through a housing vacuum chamber of the system for the semiconductor deposition.
FIGURE 5 is a sectional view through a glass sheet on which semiconductor material has been coated with the semiconductor material thicknesses exaggerated for purposes of illustration.
FIGURE 6 is a schematic plan view illustrating radiant heaters in a heating station of the furnace for providing radiant heating of the vertically conveyed glass sheet in preparation for the semiconductor deposition.
FIGURE 7 is a schematic top plan view illustrating the vertical glass sheet during conveyance within a deposition station where the semiconductor material is deposited.
FIGURE 8 is a schematic top plan view illustrating the semiconductor coated glass sheet as it is conveyed through a cooling station where radiant heat absorbers provide cooling of the glass sheet.
FIGURE 9 is an elevational view illustrating one manner in which an elongated glass sheet is conveyed with its longer axis horizontal.
FIGURE 10 is a view similar to Figure 9 illustrating another way in which the elongated glass sheet is conveyed with its longer axis vertical.
FIGURES 10a and 10b are side and end views of the resultant glass sheet regardless of whether conveyed as shown in Figure 9 or shown in Figure 10 and illustrates the resultant upper extremity 40 as including tong marks 44' on both surfaces of the glass sheet.
FIGURE 11 is a top plan view of another embodiment of a system that cools semiconductor coated hot glass sheets in accordance with the present invention.
FIGURE 12 is a sectional view taken along the direction of line 12-12 in Figure 11 through a cooling station of the system to illustrate the manner in which the semiconductor coated glass sheet is conveyed horizontally on a roll conveyor between radiant heat absorbing members of a radiant heat absorber.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
With reference to Figure 1, one embodiment of a system 20 for cooling semiconductor coated hot glass sheets is generally indicated by 20 and is operated to perform the method for cooling hot glass sheets with a semiconductor material in accordance with the invention. The system and the method will be described in an integrated manner to facilitate an understanding of all aspects of the invention.
With continuing reference to Figure 1, the system 20 includes an elongated housing collectively indicated by 22 and having a vacuum chamber 24 in which the semiconductor coating takes place. An entry load lock station 26 of the system provides provision for glass sheet entry into the vacuum chamber 24 and an exit load lock station 28 provides for exiting of the coated glass sheet out of the vacuum chamber 24 after the coating. The housing includes a heating station 30 for heating glass sheets, a pair of deposition stations 32 and 34 for supplying semiconductor material for chemical vapor deposition, and a cooling station 36 all of which are hereinafter described in greater detail.
The system 20 as shown in Figure 4 includes a pair of conveyors 38 extending alongside each other in a side-by-side relationship through the elongated housing 22. Each conveyor 38 supports upper extremities 40 of vertical glass sheets G as shown in Figure 2 and provides suspended conveyance of these vertical glass sheets through the system. This conveyance is initially into and through the entry load lock station 26 into the housing vacuum chamber 24, through the heating station 30 for heating of the glass sheets, thereafter through the two deposition stations 32 and 34 for deposition of semiconductor material on the glass sheets, then to the cooling station 36, and finally out of the vacuum chamber 24 through the exit load lock station 28 for delivery of the coated glass sheets.
As illustrated in Figures 2 and 4, each conveyor 38 includes shuttles 42 for supporting the upper extremities 40 of the vertical glass sheets, specifically by tongs 44 shown in Figure 2. The tongs 44 may be of the type disclosed by
United States Patent 3,391,958 Furer, the entire disclosure of which is hereby incorporated by reference. Each conveyor 38 shown in Figure 4 also includes a drive collectively indicated by 46 and having drive mechanisms 48 located along the system for conveying the shuttles and the vertical glass sheets suspended therefrom through the system. Thus, the drive 46 through its drive mechanisms 48 conveys the shuttles first into the entry load lock station 26 and from there into the vacuum chamber 24 of the elongated housing 22 for conveyance through the heating station
30, deposition stations 32 and 34, the cooling station 36, and finally to the exit load lock station 28 for exit from the system and delivery of the coated glass sheets. Any type of suitable return conveyors 50 can be utilized to convey the shuttles 42 after egress from the exit load lock station 28 back to the entry load lock station 26 for another cycle.
As shown in Figures 2 and 4, each shuttle 42 has an elongated shape and a downwardly depending support portion 52 (Figure 2) with holes 54 spaced therealong to receive and support the tongs 44 at the appropriate locations for the particular length of glass sheet being conveyed so that the suspended support is generally adjacent the upstream and downstream ends 56 and 58 of the upper extremity 40 of the glass sheet G being conveyed. The drive mechanisms 48 of the conveyor drive 46 each have an elongated shape and include rotary drive members
60 spaced along the elongated shape thereof to rotatively drive the shuttles 42 for the conveyance of the vertical glass sheets into, through and out of the system. More specifically, the rotary drive members 60 are supported on an elongated plate 62 by bearings 64 and are magnetic so as to provide the rotary driving of the shuttles 42 for the conveyance. The shuttles 42 have upper support and drive surfaces 66 which are supported by the magnetic rotary drive members 60 that project downwardly through holes 68 in the plate 62 as shown in Figure 3 into supporting and driving contact with the upper shuttle surfaces 60.
The conveyor drive mechanisms 48 of the conveyor drive 46 as previously discussed are spaced along the length of the system and each has an associated electric drive motor 70 as shown in Figure 2 spaced outwardly of the housing 22 from the vacuum chamber 24 as shown schematically. The shaft output of each drive motor 70 extends through a hermetically sealed bearing to one end of a drive shaft 72 of the adjacent magnetic rotary drive member 60, with the other end of the shaft being connected to a drive sprocket 74 for driving a continuous loop drive belt or chain 76 that drives another sprocket 74 on one end of the shaft 72 of the adjacent magnetic rotary drive member 60, and associated sprockets and continuous drive members on alternating sides of the drive mechanism 48 in turn provide rotary driving of all of the magnetic rotary drive members 60 in coordination with each other.
As shown in Figure 5, the semiconductor material deposition is performed on one surface of the glass sheet G which initially has a coating of tin oxide 78 that provides an electrical contact. After the heating in the heating station 30 shown in Figure 4, the first deposition station 32 provides a layer of cadmium sulfide 80 which is a N-type semiconductor and has a thickness on the order of about 0.15 microns. As the glass sheet conveyance proceeds to the second deposition station 34, a layer of cadmium telluride 82 is deposited over the cadmium sulfide layer 80 with a thickness on the order of about 3 microns to provide an I-type semiconductor. After such deposition and exiting from the system, the tin oxide layer 78, cadmium sulfide layer 80 and the cadmium telluride layer 82 can be separated into a plurality of cells and provided with another contact over the cadmium telluride layer 82 to function as a multi-cell photovoltaic panel for generating electricity from sunlight.
The system housing 22 schematically shown in Figure 4 has a modular construction including a number of housing modules 84 having opposite ends 85 connected to each other to provide the housing 22, which includes the heating station 30, the deposition stations 32 and 34, and the cooling station 36. The conveyor drive 46 has one of the previously described drive mechanisms 48 extending along the length of each housing module 84 between its upstream and downstream ends to provide the conveyance of the shuttles 42 and the glass sheets suspended therefrom through the vacuum chamber of the system housing for the heating, deposition and cooling. The entry and exit load lock stations 26 and 28 also each include an associated housing module 86 through which the conveyors 38 extend to provide the glass sheet conveyance into and out of the vacuum chamber 24 defined by the housing 22. These load lock housings 86 each have entry and exit door structures 88 and 90 whose structure is hereinafter more fully described.
As the processing begins with the glass sheet conveyance from the right toward the left as shown in Figure 4, the entry door structure 88 of the entry load lock station 26 is opened to permit conveyance of a shuttle 42 and glass sheet suspended vertically therefrom into the associated housing 86 whereupon the entry door structure is closed and the entry load lock station is evacuated by a vacuum pump to provide a vacuum of about 20 Torr. Upon reaching the required vacuum state, the exit door structure 98 is opened to permit the shuttle to be conveyed to the initial drive mechanism 48 of the heating station 30 with the shuttle bridging the drive mechanisms as it moves along from the entry load lock station into each housing module to the next through the heating station 30, depositions stations 32 and 34, and the cooling station 36. After the initial entry into the vacuum chamber of the housing 22, the exit door structure 90 of the entry load lock station 26 is closed whereupon its housing module 86 is brought back to ambient pressure, and its entry door structure 88 is opened to permit conveyance of the next shuttle 42 and glass sheet suspended therefrom into the entry load lock station to initiate processing of the next cycle. After each shuttle 42 has been processed within the vacuum chamber of housing 22 of the system 20, the shuttle approaches the exit load lock station 28 whose entry and exit door structures 88 and 90 shown in Figure 4 are closed as its housing module 86 is evacuated to a vacuum of about 20 Torr. The entry door structure 88 of the exit load lock station 28 is then opened to permit the shuttle and suspended glass sheet conveyance into the exit load lock station 28 whereupon its entry door structure 88 is closed and its housing is brought to ambient pressure, and its exit door structure 90 is subsequently opened to permit conveyance of the shuttle and suspended glass sheet out of the system for delivery.
It should be noted that the cooling station 36 as disclosed is located upstream from the exit load lock station 28 to facilitate the operation and common construction of both the entry and exit load lock stations 26 and 28. However, it is also possible for the cooling station to be located within the exit load lock station 28 even though the upstream location shown is preferred. Such cooling is important in reducing the temperature of the semiconductor material to below about 400° C before exposure to oxygen and any consequent reaction of the oxygen with the semiconductor material.
With reference back to Figure 2, it should be noted that each shuttle has opposite lateral sides 92 and the drive mechanism plate 62 has angled sides 93 supporting failsafe rollers 94 positioned below the opposite lateral shuttle sides 92. While the magnetic rotary drive members 60 support the shuttle 42 just slightly above the failsafe rollers 94, these failsafe rollers 94 ensure that the shuttle 42 does not drop down under the force of gravity or otherwise.
As shown in Figure 6, each housing module 84 of the heating station includes radiant heaters 96 spaced on opposite sides of the vertically conveyed glass sheet, and these radiant heaters 96 are embodied by radiant heating slabs 98 that are oriented vertically in a spaced and parallel relationship to each other such that the vertically conveyed glass sheet moves therebetween. Any type of suitable position adjuster 100 may be utilized to adjust the radiant heater spacing to provide uniformity of the glass sheet from both its oppositely facing surfaces. Each of the deposition stations 32 and 34 shown in Figure 4 has a construction like that shown in Figure 7 with its housing module 84 receiving a deposition module 102 and a vertically extending radiant heater 104 between which the glass sheet G is conveyed for deposition of the associated semiconductor material onto the glass sheet. The radiant heater 104, like the radiant heater in the heating station, includes a vertically extending heating slab 106 whose position can be changed as necessary by an adjuster 108 to provide uniformity of the glass temperature during the deposition. It is also possible for the deposition module 102 to include a radiant heater incorporated therein in addition to having provision for supplying hot gas that is deposited as the semiconductor material.
The cooling station 36, whether located upstream from the exit load lock station 28 or within the exit load lock station includes a radiant heat absorber 110 that is shown in Figure 8 as including radiant heat absorbing members 112 extending vertically in a spaced and parallel relationship to each other and between which the freshly semiconductor coated vertical glass sheet is positioned for cooling. The radiant heat absorbing members 112 have opposed generally continuous planar surfaces 113 at which the radiant heat is absorbed from the hot semiconductor coated glass sheet. Adjusters 114 control the positioning between the radiant heat absorbing members 112 and the glass sheet G so as to provide uniformity of cooling.
Different materials may be utilized to provide the radiant heating slabs 98 in the heating station, any radiant heater of the deposition module 102 and the radiant heating slab 106 of each deposition station, and the radiant heat absorbing members 112 of the cooling station. For example, graphite is a relatively inexpensive material that can be utilized and has good thermal conductivity so as to provide uniformity and temperature throughout; however graphite oblates even in vacuum and is sensitive to oxygen. Alpha state silicon carbide may also be utilized as it is non-porous, shock resistant and impervious to oxygen; however, it is also relatively expensive. It is possible to embed heater elements within the radiant heaters of the heating station and the deposition stations or to provide the radiant heat through the slab from heaters such as quartz tubes with Nichrome heating elements so that the slabs act as heat spreaders. Other radiant heater designs may also be possible.
During the glass sheet processing, each glass sheet can be conveyed within the housing modules in a single direction from the entrance end to the exit end, can be oscillated back and forth at each module in a forward and backward direction or can be moved forwardly a certain extent and then backward a lesser extent successively such as in a two steps forward and one step back manner.
As illustrated in Figures 9 and 10, elongated glass sheets G can be suspended by the tongs from associated shuttles 42 with their longer axes horizontal or vertical. The vertical suspension will provide greater coating capability but requires a greater vertical height of the heating, coating and cooling station components.
Regardless of whether the glass sheet is suspended and conveyed vertically in a horizontally elongated orientation as shown in Figure 9 or in a vertically elongated orientation as shown in Figure 10, the resultant glass sheet will have its upper extremity 40 deformed with tong marks 44' on both of the oppositely facing surfaces of the glass sheet. These tong marks 44' result from the deformation provided by the tongs with the glass sheet heated. Such tong marks 44' being located at the upper extremity are outside of the operational area of the semiconductor layers 80 and 82 over the tin oxide layer 78 as shown in Figure 5 and do not adversely affect the operation of the resultant glass sheet such as when used as a photovoltaic panel. The vertical suspension at the upper extremity of the conveyed glass sheet while heated maintains planarity of the glass sheet and also facilitates uniform temperature heating without variations such as can result when heating on conveyor rolls whose radiation and conduction varies during the conveyance.
A specific way of processing with the system 20 described above to provide photovoltaic panels will now be described. Such processing starts with tin oxide coated glass sheets approximately 3.2 millimeters thick of a size of 600 millimeters by 1200 millimeters which is approximately 24 inches by 48 inches. Initially the edges of the glass sheet substrate are diamond ground to a number 1 pencil and are polished finish to provide comfort in handling and eliminate fissures that can cause breakage during handling and heat treatment. The edging speed must be approximately 40 millimeters per second, i.e., 90 inches per minute, in order to obtain a two piece per minute cycle rate into the system. After the edging, the glass sheet substrate is washed, to remove particulates and provide preparation for coating, with a suitable detergent that is then rinsed with deionized water to provide a mineral free surface after air drying. Upstream from the system 20, a suitable laser station will imprint a code on the glass sheet for production control and location during processing.
To provide cycle timing, the vacuum pump system is matched to the volume of the load lock chamber to provide a pump down time such as on the order of 21 seconds to 20 Torr. Conveyance into and out of each load lock station plus venting and pump down time amount to a 60 second total cycle time with the load lock chamber volume at 56 cubic feet, a pumping speed of 580 cubic feet per minute for the 21 second pump down time, 10 seconds for conveyance into the load lock station, 10 seconds for exiting, and 19 seconds to provide door actuation and atmospheric venting.
In the system heating station 30 previously described in connection with Figure 4, the glass sheet substrate will be heated to approximately 585°C in preparation for the initial semiconductor coating. This heating by the radiant heaters 96 previously described in connection with Figure 6 will be provided with about 25 kilowatts per side in an initial zone and 16 kilowatts per side in subsequent zones with the radiant heat chamber being at approximately 680°C so as to provide the desired glass surface substrate temperature of 580°C in approximately 150 seconds. Of course, the transport speed can be varied for the particular glass sheet being coated along with the necessary temperatures.
During the deposition of the semiconductor material at the deposition modules 32 and 34 as previously described in connection with Figure 4, the hot gas suppled by the deposition module 102 shown in Figure 7 maintains the substrate at a uniform temperature in association with the backside radiant heater 104. The vertical orientation eliminates the potential for pinholes, nucleated materials and condensed vapor from making contact with the glass sheet substrate. Uniformity of the film thickness is dependent upon the temperature of the glass sheet substrate and the source vapor geometry, and the electrical quality is dependent on the lack of voids or pre nucleated material that sticks to the surface.
At the initial deposition station 32 shown in Figure 4, the cadmium sulfide providing the N-layer is applied with the cadmium sulfide gas sublimed and heated to a temperature of 950°C. It is believed that the rate of coating will be about 1,000 angstrom per second to a total thickness of about 900 to 1,500 angstroms, and a suitable detection device within the deposition module will be utilized to scan the coating thickness.
The second deposition station 34 previously described in connection with Figure 4 provides the cadmium telluride layer which is a P-layer. The glass sheet substrate temperature will be approximately 605°C, the cadmium telluride will be sublimed and heated to about 1050°C and the coating will be supplied through a variable aperture to control the rate of deposition which will be to a thickness of about 3 microns that is believed to be at a rate of 2.5 microns per second.
The cooling station 36 previously described in connection with Figure
4 then receives the semiconductor coated glass sheet substrate to provide cooling below about 400°C so as to prevent exposure to oxygen and consequent reaction therewith of the coated materials While it is also possible to provide the radiant cooling in the exit load lock station as previously discussed, such processing will result in an increased exit time that could increase the cycle time.
After the coated glass sheet leaves the exit load lock station for delivery, a suitable after cooler will provide cooling to about 50°C for handling. The thickness of the cadmium telluride will then be tested to confirm correctness, a dilute aqueous solution of cadmium chloride is sprayed or rolled onto the semiconductor coatings and the glass sheet is then heated to about 400°C for about 15 minutes to facilitate the conversion of light to electricity. The treated glass sheet is then washed with deionized water, rinsed and dried. Suitable laser scribing and processing then is utilized to then convert a semiconductor coated glass sheet to a photovoltaic panel.
For a more detailed description of the system 20 described above, reference should be made to the United States Patent application Serial No. (Attorney Docket No. WKSG 0101 PUSP) filed concurrently herewith by James E. Heider et al. under the title SYSTEM AND METHOD FOR GLASS SHEET SEMICONDUCTOR COATING AND RESULTANT PRODUCT, the entire disclosure of which is hereby incorporated by reference.
With reference to Figure 11 , another embodiment of a system 20' for cooling semiconductor coated hot glass sheets is similar to the previously described system shown in Figures 1-10 except as will be noted and thus has like reference numerals applied to like components thereof and much of the prior description is applicable and thus will not be repeated.
System 20' shown in Figures 11 and 12 has a roll conveyor 116 including horizontal rolls 118 on which the glass sheet G is conveyed through the system for deposition of the semiconductor material on its upwardly facing surface. The radiant heat absorber 110 of the cooling station 36 as shown in Figure 12 has upper and lower radiant heat absorbing members 112U and 112, spaced from each other in an opposed relationship between which the roll conveyor 116 conveys the semiconductor coated glass sheet so the radiant heat absorbing members absorb radiant heat therefrom to provide cooling. The upper and lower radiant heat absorbing members 112U and 112, have planar heat absorbing surfaces 120 and 122 that face the conveyed glass sheet G from above and below respectively to provide the radiant cooling. More specifically, the downwardly facing planar surface 120 of the upper heat absorbing member 112U is generally continuous. The lower heat absorbing 112, has spaced portions 124 that project upwardly between the conveyor rolls 118 and define upwardly facing heat absorbing surface portions 126 of the surface 122 for providing radiant heat absorption from the lower surface of the glass sheet G.
As shown in Figure 12, the lower heat absorbing member 112 has a one-piece unitary construction including a lower base 128 from which the spaced portions 124 project upwardly to between the conveyor rolls 118. The combined area of the lower spaced surface portions 126 is thus less than the total area of the upper continuous surface 120 and the upper glass surface radiates heat through the coated semiconductor layers while the lower glass surface has no such coating. Furthermore, the lower glass sheet surface also radiates and conducts heat to the conveyor rolls 118. Adjusters 114 permit adjustment of the heat absorbing members 112U and 112, in order to provide equal cooling from above and below and thereby maintain glass planarity during the cooling. It should be noted that the lower conveyor rolls 118 can advantageously be made by sinter bonded fused silica particles so as to have a low coefficient of thermal expansion and thereby prevent thermal warpage.
Both the upper and lower radiant heat absorbing members 112U and 112, like the earlier described embodiment can be made from graphite or a refractory which preferably is alpha state silicon carbide.
While embodiments of the invention have been illustrated and described, it is not intended that these embodiments illustrate and describe all possible forms of the invention. Rather, the words used in the specification are words of description rather than limitation, and it is understood that various changes may be made without departing from the spirit and scope of the invention.

Claims

WHAT IS CLAIMED IS:
L A system for cooling semiconductor coated hot glass sheets comprising: a housing defining a vacuum chamber; a conveyor for conveying hot glass sheets freshly coated with semiconductor material through the vacuum chamber; and a cooling station including a radiant heat absorber having radiant heat absorbing members spaced from each other in an opposed relationship between which the semiconductor coated glass sheets are conveyed so the radiant heat absorbing members absorb radiant heat therefrom to provide cooling.
2. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the conveyor has upper supports that support upper extremities of the semiconductor coated glass sheets which depend downwardly therefrom in a vertical orientation during the conveyance through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, and the radiant heat absorbing members of the radiant heat absorber having generally continuous planar heat absorbing surfaces that extend vertically and oppose each other in a spaced and parallel relationship with the vertically oriented semiconductor coated glass sheets being conveyed therebetween for cooling.
3. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the conveyor includes horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, the radiant heat absorber including upper and lower heat absorbing members including planar heat absorbing surfaces, the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and the lower heat absorbing member including spaced portions located between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets.
4. A system for cooling semiconductor coated hot glass sheets as in claim 3 wherein the lower heat absorbing portion has a one-piece unitary construction including a lower base from which its spaced portions project upwardly between the conveyor rolls.
5. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the radiant heat absorbers are made from a material selected from graphite and a refractory.
6. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the radiant heat absorbers are alpha state silicon carbide.
7. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the conveyor has upper supports that support upper extremities of the semiconductor coated glass sheets which depend downwardly therefrom in a vertical orientation during the conveyance through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, and the radiant heat absorbing members of the radiant heat absorber being made from a refractory material and having generally continuous planar heat absorbing surfaces that extend vertically and oppose each other in a spaced and parallel relationship with the vertically oriented semiconductor coated glass sheets being conveyed therebetween for cooling.
8. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the conveyor includes horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, the radiant heat absorber including upper and lower heat absorbing members made from a refractory material and including planar heat absorbing surfaces, the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and the lower heat absorbing member including spaced portions located between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets.
9. A system for cooling semiconductor coated hot glass sheets as in claim 8 wherein the refractory lower heat absorbing portion has a one-piece unitary construction including a lower refractory base from which its refractory spaced portions project upwardly between the conveyor rolls.
10. A system for cooling semiconductor coated hot glass sheets as in claim 1 wherein the conveyor includes horizontal rolls spaced along the housing within the vacuum chamber to convey the semiconductor coated glass sheets horizontally through the vacuum chamber and between the radiant heat absorbing members of the radiant heat absorber, the radiant heat absorber including upper and lower heat absorbing members made from a refractory material and including planar heat absorbing surfaces, the upper heat absorbing member having a generally continuous downwardly facing heat absorbing surface spaced above the conveyor rolls, and the lower heat absorbing member having a unitary one-piece construction including a lower base and spaced portions projecting upwardly from the base between the conveyor rolls and having upwardly facing heat absorbing surface portions that are spaced below the conveyed semiconductor coated glass sheets.
11. A method for cooling a semiconductor coated hot glass sheet comprising: conveying a hot glass sheet newly coated with semiconductor material within a vacuum chamber to between a pair of spaced radiant heat absorbing members that receive radiant heat from the coated glass sheet to provide cooling.
12. A method for cooling a semiconductor coated hot glass sheet as in claim 11 wherein the semiconductor coated hot glass sheet is conveyed in a vertically extending orientation supported by the conveyor at an upper extremity of the coated glass sheet and conveyed between vertically extending radiant heat absorbing members for the cooling.
13. A method for cooling a semiconductor coated hot glass sheet as in claim 11 wherein the semiconductor coated hot glass sheet is conveyed in a horizontally extending orientation on rolls of a roll conveyor to between upper and lower radiant heat absorbing members with the semiconductor material facing upwardly toward the upper heat absorbing member.
14. A method for cooling a semiconductor coated hot glass sheet as in claim 13 wherein the semiconductor coated hot glass sheet is cooled from above by an upper radiant heat absorbing member that has a continuous downwardly facing surface.
15. A method for cooling a semiconductor coated hot glass sheet as in claim 13 wherein the semiconductor coated hot glass sheet is cooled from below by a lower radiant heat absorbing member that has spaced portions projecting upwardly between the conveyor rolls.
16. A method for cooling a semiconductor coated hot glass sheet as in claim 13 wherein the semiconductor coated hot glass sheet is cooled from above by an upper radiant heat absorbing member that has a continuous downwardly facing surface and wherein the semiconductor coated glass sheet is cooled from below by a lower radiant heat absorbing member that has spaced portions projecting upwardly between the conveyor rolls.
17. A method for cooling a semiconductor coated hot glass sheet as in claim 11 wherein the semiconductor coated hot glass sheet is cooled between radiant heat absorbing members made of a refractory material.
18. A method for cooling a semiconductor coated hot glass sheet as in claim 11 wherein the semiconductor coated hot glass sheet is cooled between radiant heat absorbing members made of alpha state silicon carbide.
PCT/US2009/030072 2008-01-28 2009-01-05 System and method for cooling semiconductor coated hot glass sheets WO2009097164A1 (en)

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US20090191031A1 (en) 2009-07-30
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EP2247542A4 (en) 2012-08-29

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