WO2009108752A3 - Laser-induced structuring of substrate surfaces - Google Patents

Laser-induced structuring of substrate surfaces Download PDF

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Publication number
WO2009108752A3
WO2009108752A3 PCT/US2009/035239 US2009035239W WO2009108752A3 WO 2009108752 A3 WO2009108752 A3 WO 2009108752A3 US 2009035239 W US2009035239 W US 2009035239W WO 2009108752 A3 WO2009108752 A3 WO 2009108752A3
Authority
WO
WIPO (PCT)
Prior art keywords
fluid
laser pulses
substrate
sized
structures
Prior art date
Application number
PCT/US2009/035239
Other languages
French (fr)
Other versions
WO2009108752A2 (en
Inventor
Eric Mazur
Mengyan Shen
Original Assignee
President & Fellows Of Harvard College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by President & Fellows Of Harvard College filed Critical President & Fellows Of Harvard College
Publication of WO2009108752A2 publication Critical patent/WO2009108752A2/en
Publication of WO2009108752A3 publication Critical patent/WO2009108752A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/814—Group IV based elements and compounds, e.g. CxSiyGez, porous silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/816—III-N based compounds, e.g. AlxGayInzN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe

Abstract

In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.
PCT/US2009/035239 2008-02-27 2009-02-26 Laser-induced structuring of substrate surfaces WO2009108752A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/038,209 2008-02-27
US12/038,209 US7816220B2 (en) 2008-02-27 2008-02-27 Laser-induced structuring of substrate surfaces

Publications (2)

Publication Number Publication Date
WO2009108752A2 WO2009108752A2 (en) 2009-09-03
WO2009108752A3 true WO2009108752A3 (en) 2010-01-07

Family

ID=40998254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/035239 WO2009108752A2 (en) 2008-02-27 2009-02-26 Laser-induced structuring of substrate surfaces

Country Status (2)

Country Link
US (3) US7816220B2 (en)
WO (1) WO2009108752A2 (en)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
US8753990B2 (en) * 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
US20080299408A1 (en) 2006-09-29 2008-12-04 University Of Rochester Femtosecond Laser Pulse Surface Structuring Methods and Materials Resulting Therefrom
US10876193B2 (en) * 2006-09-29 2020-12-29 University Of Rochester Nanostructured materials, methods, and applications
US20100143744A1 (en) * 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
JP2011514664A (en) * 2008-01-31 2011-05-06 プレジデント アンド フェローズ オブ ハーバード カレッジ Engineering flat surfaces of materials doped via pulsed laser irradiation
WO2009100023A2 (en) * 2008-02-01 2009-08-13 President & Fellows Of Harvard College A multijunction photovoltaic device
US7816220B2 (en) * 2008-02-27 2010-10-19 President & Fellows Of Harvard College Laser-induced structuring of substrate surfaces
WO2010028177A1 (en) * 2008-09-03 2010-03-11 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US9993895B2 (en) 2009-03-30 2018-06-12 Boegli-Gravures Sa Method and device for structuring the surface of a hard material coated solid body by means of a laser
US8207051B2 (en) * 2009-04-28 2012-06-26 Sionyx, Inc. Semiconductor surface modification
WO2010127298A2 (en) * 2009-04-30 2010-11-04 Sionyx, Inc. Low oxygen content semiconductor material for surface enhanced photonic devices associated methods
WO2011022687A2 (en) * 2009-08-20 2011-02-24 Sionyx, Inc. Laser processed heterojunction photovoltaic devices and associated methods
US8476598B1 (en) 2009-08-31 2013-07-02 Sionyx, Inc. Electromagnetic radiation imaging devices and associated methods
US8309389B1 (en) 2009-09-10 2012-11-13 Sionyx, Inc. Photovoltaic semiconductor devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
JP5961332B2 (en) 2009-09-17 2016-08-02 サイオニクス、エルエルシー Photosensitive imaging device and related method
WO2011050336A2 (en) * 2009-10-22 2011-04-28 Sionyx, Inc. Semiconductor devices having an enhanced absorption region and associated methods
US9268061B2 (en) * 2010-02-22 2016-02-23 Vaisala Oyj Method for calibrating or testing a detector surface of a device for detecting hydrometeors and a calibration and testing device
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (en) 2010-06-18 2013-04-24 Sionyx, Inc. High speed photosensitive devices and associated methods
KR20140014121A (en) 2010-12-21 2014-02-05 사이오닉스, 아이엔씨. Semiconductor devices having reduced substrate damage and associated methods
KR102025522B1 (en) 2011-03-10 2019-11-26 사이오닉스, 엘엘씨 Three dimensional sensors, systems, and associated methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
CN103946867A (en) 2011-07-13 2014-07-23 西奥尼克斯公司 Biometric imaging devices and associated methods
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
WO2013074755A1 (en) * 2011-11-15 2013-05-23 B6 Sigma, Inc. Medical implants with enhanced osseointegration
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
DE102012025294A1 (en) 2012-12-28 2014-07-03 Laser Zentrum Hannover E.V. Method for producing structures on a surface of a workpiece
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
WO2016152938A1 (en) * 2015-03-24 2016-09-29 オーエム産業株式会社 Method for producing plated article
WO2017053198A2 (en) 2015-09-17 2017-03-30 The Regents Of The University Of Michigan Femtosecond laser-induced formation of single crystal patterned semiconductor surface
AT16668U1 (en) * 2015-10-15 2020-04-15 Zumtobel Lighting Gmbh Process for the production of a scattering optics and scattering optics and luminaire with scattering optics
US10276740B1 (en) 2018-03-19 2019-04-30 The United States Of America As Represented By The Secretary Of The Air Force Co-deposition of black silicon
US20220143748A1 (en) * 2020-11-12 2022-05-12 Nutech Ventures Laser surface processing systems and methods for producing near perfect hemispherical emissivity in metallic surfaces

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050226287A1 (en) * 2004-03-31 2005-10-13 Imra America, Inc. Femtosecond laser processing system with process parameters, controls and feedback
US20060079062A1 (en) * 2004-09-24 2006-04-13 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) * 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US20080044943A1 (en) * 2001-05-25 2008-02-21 President & Fellows Of Harvard Manufacture of silicon-based devices having disordered sulfur-doped surface layers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048588A (en) * 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
US7163659B2 (en) * 2002-12-03 2007-01-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid
US7816220B2 (en) * 2008-02-27 2010-10-19 President & Fellows Of Harvard College Laser-induced structuring of substrate surfaces

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) * 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US20080044943A1 (en) * 2001-05-25 2008-02-21 President & Fellows Of Harvard Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US20050226287A1 (en) * 2004-03-31 2005-10-13 Imra America, Inc. Femtosecond laser processing system with process parameters, controls and feedback
US20060079062A1 (en) * 2004-09-24 2006-04-13 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Also Published As

Publication number Publication date
US20120145989A1 (en) 2012-06-14
US20090213883A1 (en) 2009-08-27
US7816220B2 (en) 2010-10-19
US20110031471A1 (en) 2011-02-10
WO2009108752A2 (en) 2009-09-03
US8143686B2 (en) 2012-03-27

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