WO2009124243A3 - Die thinning processes and structures - Google Patents

Die thinning processes and structures Download PDF

Info

Publication number
WO2009124243A3
WO2009124243A3 PCT/US2009/039450 US2009039450W WO2009124243A3 WO 2009124243 A3 WO2009124243 A3 WO 2009124243A3 US 2009039450 W US2009039450 W US 2009039450W WO 2009124243 A3 WO2009124243 A3 WO 2009124243A3
Authority
WO
WIPO (PCT)
Prior art keywords
structures
dies
thinning processes
die thinning
substrate
Prior art date
Application number
PCT/US2009/039450
Other languages
French (fr)
Other versions
WO2009124243A2 (en
Inventor
Jeffrey C. Thompson
Gary B. Tepolt
Livia M. Racz
Original Assignee
The Charles Stark Draper Laboratory, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Charles Stark Draper Laboratory, Inc. filed Critical The Charles Stark Draper Laboratory, Inc.
Publication of WO2009124243A2 publication Critical patent/WO2009124243A2/en
Publication of WO2009124243A3 publication Critical patent/WO2009124243A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Abstract

Microelectronic dies are thinned from a first thickness tl to a second thickness t2 according to a variety of approaches, which may include bonding the dies (110) to a substrate (200) under vacuum, disposing a film (120) over the dies and the substrate, and/or changing a center of pressure during thinning. The film (120) acts as a polishing stop.
PCT/US2009/039450 2008-04-04 2009-04-03 Die thinning processes and structures WO2009124243A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/062,864 2008-04-04
US12/062,864 US7960247B2 (en) 2008-04-04 2008-04-04 Die thinning processes and structures

Publications (2)

Publication Number Publication Date
WO2009124243A2 WO2009124243A2 (en) 2009-10-08
WO2009124243A3 true WO2009124243A3 (en) 2009-11-26

Family

ID=40810089

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/039450 WO2009124243A2 (en) 2008-04-04 2009-04-03 Die thinning processes and structures

Country Status (2)

Country Link
US (1) US7960247B2 (en)
WO (1) WO2009124243A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017451B2 (en) 2008-04-04 2011-09-13 The Charles Stark Draper Laboratory, Inc. Electronic modules and methods for forming the same
US8273603B2 (en) * 2008-04-04 2012-09-25 The Charles Stark Draper Laboratory, Inc. Interposers, electronic modules, and methods for forming the same
FR2982415B1 (en) * 2011-11-09 2014-06-13 Commissariat Energie Atomique PROCESS FOR OBTAINING SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR AND CORRESPONDING SUBSTRATE
US8785249B2 (en) * 2012-05-23 2014-07-22 The Charles Stark Draper Laboratory, Inc. Three dimensional microelectronic components and fabrication methods for same
CN103682177B (en) * 2013-12-16 2015-03-25 深圳市华星光电技术有限公司 Manufacturing method of flexible OLED panel
US9693469B2 (en) 2013-12-19 2017-06-27 The Charles Stark Draper Laboratory, Inc. Electronic module subassemblies
CN110098286B (en) * 2018-01-29 2020-05-08 山东浪潮华光光电子股份有限公司 Surface mounting method in thinning of LED wafer substrate
RU183099U1 (en) * 2018-05-30 2018-09-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Петрозаводский государственный университет" CRYSTAL MOUNTING DEVICE FOR THINING

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4735679A (en) * 1987-03-30 1988-04-05 International Business Machines Corporation Method of improving silicon-on-insulator uniformity
EP1152464A2 (en) * 2000-04-28 2001-11-07 Sony Corporation Chip size package semiconductor device and method of manufacturing the same
US20030070517A1 (en) * 2001-10-11 2003-04-17 Lintec Corporation Method and apparatus for peeling protective sheet
US20060270104A1 (en) * 2005-05-03 2006-11-30 Octavio Trovarelli Method for attaching dice to a package and arrangement of dice in a package
US7292381B1 (en) * 2005-09-08 2007-11-06 Hrl Laboratories, Llc Method for conforming a micro-electronic array to arbitrary shapes

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266334A (en) 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
US5250843A (en) 1991-03-27 1993-10-05 Integrated System Assemblies Corp. Multichip integrated circuit modules
US5144747A (en) 1991-03-27 1992-09-08 Integrated System Assemblies Corporation Apparatus and method for positioning an integrated circuit chip within a multichip module
US5480842A (en) 1994-04-11 1996-01-02 At&T Corp. Method for fabricating thin, strong, and flexible die for smart cards
US6013534A (en) 1997-07-25 2000-01-11 The United States Of America As Represented By The National Security Agency Method of thinning integrated circuits received in die form
JP2001523046A (en) 1997-11-11 2001-11-20 アービン・センサーズ・コーポレイション Method for thinning a semiconductor wafer with circuits and wafer made by the method
US6020646A (en) 1997-12-05 2000-02-01 The Charles Stark Draper Laboratory, Inc. Intergrated circuit die assembly
EP0977240A1 (en) * 1998-07-30 2000-02-02 IMEC vzw System, method and apparatus for processing semiconductors
US6017822A (en) 1998-09-16 2000-01-25 The United States Of America As Represented By The National Security Agency Method of thinning semiconductor wafer of smaller diameter than thinning equipment was designed for
EP1041624A1 (en) 1999-04-02 2000-10-04 Interuniversitair Microelektronica Centrum Vzw Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device
JP2001185519A (en) 1999-12-24 2001-07-06 Hitachi Ltd Semiconductor device and method of manufacturing the same
US6548376B2 (en) 2001-08-30 2003-04-15 Micron Technology, Inc. Methods of thinning microelectronic workpieces
TW517361B (en) 2001-12-31 2003-01-11 Megic Corp Chip package structure and its manufacture process
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
JP4471563B2 (en) 2002-10-25 2010-06-02 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
US6762074B1 (en) 2003-01-21 2004-07-13 Micron Technology, Inc. Method and apparatus for forming thin microelectronic dies
US6861336B1 (en) 2003-11-30 2005-03-01 Union Semiconductor Technology Corporation Die thinning methods
US7397066B2 (en) * 2004-08-19 2008-07-08 Micron Technology, Inc. Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
US7268012B2 (en) 2004-08-31 2007-09-11 Micron Technology, Inc. Methods for fabrication of thin semiconductor assemblies including redistribution layers and packages and assemblies formed thereby
US8063482B2 (en) 2006-06-30 2011-11-22 Intel Corporation Heat spreader as mechanical reinforcement for ultra-thin die

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4735679A (en) * 1987-03-30 1988-04-05 International Business Machines Corporation Method of improving silicon-on-insulator uniformity
EP1152464A2 (en) * 2000-04-28 2001-11-07 Sony Corporation Chip size package semiconductor device and method of manufacturing the same
US20030070517A1 (en) * 2001-10-11 2003-04-17 Lintec Corporation Method and apparatus for peeling protective sheet
US20060270104A1 (en) * 2005-05-03 2006-11-30 Octavio Trovarelli Method for attaching dice to a package and arrangement of dice in a package
US7292381B1 (en) * 2005-09-08 2007-11-06 Hrl Laboratories, Llc Method for conforming a micro-electronic array to arbitrary shapes

Also Published As

Publication number Publication date
US20090251879A1 (en) 2009-10-08
WO2009124243A2 (en) 2009-10-08
US7960247B2 (en) 2011-06-14

Similar Documents

Publication Publication Date Title
WO2009124243A3 (en) Die thinning processes and structures
WO2007109326A3 (en) Methods and materials useful for chip stacking, chip and wafer bonding
WO2009050785A1 (en) Pressure-sensitive adhesive, pressure-sensitive adhesive sheet, multilayered pressure-sensitive adhesive sheet, and process for producing electronic part
WO2009066704A1 (en) Solder material, process for producing the solder material, joint product, process for producing the joint product, power semiconductor module, and process for producing the power semiconductor module
TW200746262A (en) Method of manufacturing nitride semiconductor substrate and composite material substrate
WO2008132852A1 (en) Dicing/die bonding tape and method for manufacturing semiconductor chip
WO2006039124A3 (en) Apparatuses, systems, and methods for manufacturing composite parts
WO2009131363A3 (en) Pressure-sensitive adhesive film and back-grinding method using the same
WO2004051708A3 (en) Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
EP4006969A3 (en) Stacked fan-out package structure
TWI256112B (en) Dicing film having shrinkage release film and method of manufacturing semiconductor package using the same
TW200722496A (en) Die bonding adhesive tape
EP1788621A3 (en) Method for manufacturing bonded substrate and bonded substrate manufactured by the method
WO2006054024A3 (en) Semiconductor wafer thinning
TW200627536A (en) Adhesive sheet, method for producing the sheet, method for producing semiconductor device, and the semiconductor device
WO2009050786A1 (en) Pressure-sensitive adhesive, pressure-sensitive adhesive sheet, multilayered pressure-sensitive adhesive sheet, and method for manufacturing electronic component
WO2010139342A8 (en) Lens and method for manufacturing same
EP2506295A3 (en) Bonding apparatus and bonding method
WO2009113831A3 (en) Multi-functional tape for semiconductor package and a method for manufacturing semiconductor device using the same
WO2009091923A3 (en) Substrate lamination system and method
WO2008129976A1 (en) Method for manufacturing chip with adhesive
EP2333827A3 (en) Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
TW200705603A (en) Dicing die adhesive film for semiconductor
WO2009155247A3 (en) Semiconductor die separation method
WO2009024762A3 (en) Mems process and device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09726989

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09726989

Country of ref document: EP

Kind code of ref document: A2