WO2009134576A1 - Copyback optimization for memory system - Google Patents

Copyback optimization for memory system Download PDF

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Publication number
WO2009134576A1
WO2009134576A1 PCT/US2009/039160 US2009039160W WO2009134576A1 WO 2009134576 A1 WO2009134576 A1 WO 2009134576A1 US 2009039160 W US2009039160 W US 2009039160W WO 2009134576 A1 WO2009134576 A1 WO 2009134576A1
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WO
WIPO (PCT)
Prior art keywords
data page
changed
memory
data
register
Prior art date
Application number
PCT/US2009/039160
Other languages
French (fr)
Inventor
Nir Jacob Wakrat
Mark Alan Helm
Original Assignee
Apple Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apple Inc. filed Critical Apple Inc.
Priority to AT09739378T priority Critical patent/ATE535866T1/en
Priority to KR1020107026742A priority patent/KR101225924B1/en
Priority to ES09739378T priority patent/ES2378371T3/en
Priority to CN2009801252990A priority patent/CN102077176B/en
Priority to KR1020127013247A priority patent/KR101471262B1/en
Priority to EP09739378A priority patent/EP2297642B1/en
Priority to JP2011507514A priority patent/JP5192587B2/en
Publication of WO2009134576A1 publication Critical patent/WO2009134576A1/en
Priority to HK11109601.9A priority patent/HK1155530A1/en
Priority to HK11112791.3A priority patent/HK1158344A1/en

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's

Definitions

  • Flash memory is a type of electrically erasable programmable read-only memory (EEPROM). Because flash memories are non-volatile and relatively dense, they are used to store files and other persistent objects in handheld computers, mobile phones, digital cameras, portable music players, and many other devices in which other storage solutions (e.g., magnetic disks) are inappropriate.
  • EEPROM electrically erasable programmable read-only memory
  • flash memories are non-volatile and relatively dense, they are used to store files and other persistent objects in handheld computers, mobile phones, digital cameras, portable music players, and many other devices in which other storage solutions (e.g., magnetic disks) are inappropriate.
  • EEPROM electrically erasable programmable read-only memory
  • data page change indicators are used to manage transfers of data pages between a register in non-volatile memory and a controller that is external to the non-volatile memory.
  • FIG. IA is a block diagram of an example memory system for implementing an optimized copyback process.
  • FIG. IB is a block diagram of another example memory system for implementing an optimized copyback process.
  • FIG. 2 is a flow diagram of an example optimized copyback process 200 for computing and storing data change indicators used by the memory systems of FIGS. IA and IB.
  • FIGS. 3A-3C are flow diagrams of an example optimized copyback process implemented by the memory systems of FIGS. IA and IB.
  • FIG. 4 is a flow diagram of an example optimized read operation implemented by the memory systems of FIGS. IA and IB.
  • FIG. 5 illustrates example data structures used by the copyback process of FIGS. 3A-3C.
  • FIG. IA is a block diagram of an example memory system 100 for implementing an optimized copyback process.
  • the system 100 can include a memory subsystem 102 coupled to a host device 124 through an external bus 122 (e.g., Open NAND Flash Interface (ONFI), ATA).
  • the host device 124 can be any electronic device including but not limited to smart phones, media players, text messaging devices, portable computers, solid state drives, digital cameras, etc.
  • the memory subsystem 102 can be any non-volatile memory subsystem (e.g., managed NAND).
  • the host device 124 can include a system-on-chip (SoC) 126 and volatile memory 128.
  • SoC system-on-chip
  • the SoC 126 can include hardware and software for interacting with the memory subsystem 102, such as transmitting read and write requests made by applications running on the host device 124.
  • the memory subsystem 102 can include non-volatile memory 104 (also referred to as "raw memory") and an external controller 116.
  • the memory 104 can include a memory cell array 106, an internal state machine 108, a memory register 110 and data change indicator (DCI) 130.
  • the controller 116 can include a processor 118, volatile memory 114 and error correction code (ECC) engine 120.
  • ECC error correction code
  • Other configurations for the memory subsystem 102 are possible.
  • a cache register can be included in the data path between the memory cell array 106 and the memory register 110 to allow the internal state machine to read the next data page from the memory cell array 106 while transferring the current page to the controller 116 over internal bus 112.
  • FIG. IB is a block diagram of another example memory system 130 for implementing an optimized copyback process.
  • the system 130 shows only the memory subsystem 102, the operation of which was described in reference to FIG. IA.
  • Copyback can be a memory subsystem command to move data from one page to another page. Copyback can be used in wear leveling and other nonvolatile memory management operations.
  • a data page is read from the memory cell array 106 and stored in the memory register 110 by the internal state machine.
  • the external controller 116 reads or clocks the data page out of the memory register 110 so that the processor 118 can perform a desired operation on the data page (e.g., an ECC operation).
  • the processed data page can be written back to the memory register 110 by the controller 116.
  • the internal state machine 108 can write the contents of the memory register 110 into a new data page in the memory cell array 106.
  • FIG. 2 is a flow diagram of an example optimized copyback process 200 for computing and storing data change indicators used by the memory systems of FIGS. IA and IB.
  • the process 200 can begin when new data page is transferred into a memory register of a memory subsystem (202).
  • a DCI can be computed for the data page and stored in the memory subsystem (204).
  • Some examples of data change indicators can include error detection codes (EDCs), including but not limited to: checksum, Hamming code, parity bit, cyclic redundancy check (CRC), polarity symbol reversal, Turbo code, etc.
  • EDCs error detection codes
  • CRC cyclic redundancy check
  • An EDC can also be part of an ECC, such as Reed-Solomon code, Reed-Muller code, Binary Golay code, and low-density parity-check codes.
  • ECC Err-Solomon code
  • Reed-Muller code Reed-Muller code
  • Binary Golay code Binary Golay code
  • low-density parity-check codes After the DCIs are computed and stored, the register contents can be written to non-volatile memory (206). DCIs can be used for the optimized copyback process described in reference to FIGS. 3A-3C.
  • FIGS. 3A-3C are flow diagrams of an example optimized copyback process 300 implemented by the memory systems of FIGS. IA and IB.
  • the process 300 can begin by reading a data page from non-volatile memory (e.g., memory cell array 106) and storing the data page in a memory register (302) (e.g., register 110).
  • a DCI e.g., DCI 130
  • the DCI can be verified for the data page in the memory register (304).
  • the DCI can be previously computed and stored in the memory subsystem when the data page is first written to non-volatile memory (e.g., using process 200).
  • the DCI can be computed "on the fly" as part of the read operation or as a separate operation.
  • the memory subsystem can report to an external controller (e.g., external controller 116) that the read operation has completed (306).
  • the data page can be transferred to the external controller (310), an ECC can be computed for the data page (312) and the ECC information for the data page can be corrected in the external controller (314).
  • the data page and associated ECC can be transferred back to the memory register (316).
  • a new DCI can be computed for the data page in the memory register (318).
  • an ECC can be computed for new metadata associated with the data page (320).
  • the new metadata and associated ECC can be transferred to the memory register (322).
  • a new DCI can be computed for the metadata in the memory register (324).
  • the memory register contents can be written to a new data page in non-volatile memory (326).
  • FIG. 4 is a flow diagram of an example optimized read operation implemented by the memory systems of FIGS. IA and IB.
  • the process 400 can begin by reading a data page from non-volatile memory and storing the data page in a memory register (402).
  • a pre-computed DCI associated with the data page can be clocked into the memory register from a storage location in the memory subsystem and verified (404).
  • the DCI can also be computed "on the fly.”
  • the status of the DCI can be read to determine if the data page has changed (406).
  • an ECC for the new metadata associated with the data page can be computed and transferred, together with the new metadata to the memory register (412).
  • a new DCI can be computed for the metadata in the memory register and the register contents can be written to a new data page in non-volatile memory (414).
  • the memory register contents can be transferred to an external controller and an ECC can be computed by the external controller (410).
  • An ECC for the new metadata associated with the data page can be computed and transferred by the external controller, together with the new metadata to the memory register (412).
  • a new DCI can be computed for the metadata in the memory register and the register contents can be written to a new data page in non-volatile memory (414).
  • FIG. 5 illustrates example data structures used by the copyback process of FIGS. 3A-3C.
  • a data page 500 in non-volatile memory includes metadata 502, metadata ECC 504, data 506 and data ECC 508. If the data has not changed than only the metadata 502 and the metadata ECC 504 are transferred from the register to the external controller 510 for processing. The processed metadata 502 and metadata ECC 504 are transferred back to the memory subsystem and stored in the memory register. The data page can the be written to a new data page in non-volatile memory (e.g., a memory cell array).
  • a number of implementations have been described. Nevertheless, it will be understood that various modifications may be made.

Abstract

In a copyback or read operation for a non-volatile memory subsystem, data page change indicators are used to manage transfers of data pages between a register in non-volatile memory and a controller that is external to the non-volatile memory.

Description

COPYBACK OPTIMIZATION FOR MEMORY SYSTEM
TECHNICAL FIELD [0001] This subject matter is generally related to memory systems.
BACKGROUND
[0002] Flash memory is a type of electrically erasable programmable read-only memory (EEPROM). Because flash memories are non-volatile and relatively dense, they are used to store files and other persistent objects in handheld computers, mobile phones, digital cameras, portable music players, and many other devices in which other storage solutions (e.g., magnetic disks) are inappropriate. When data stored in flash memory is processed, a data page is read out of flash memory and stored in a register. The register contents is transferred to a controller that is external to the non-volatile memory for processing. The processed data page is placed back in the register so that the processed data page can be written back to flash memory.
SUMMARY
[0003] In a copyback or read operation for a non-volatile memory subsystem, data page change indicators are used to manage transfers of data pages between a register in non-volatile memory and a controller that is external to the non-volatile memory.
DESCRIPTION OF DRAWINGS
[0004] FIG. IA is a block diagram of an example memory system for implementing an optimized copyback process.
[0005] FIG. IB is a block diagram of another example memory system for implementing an optimized copyback process.
[0006] FIG. 2 is a flow diagram of an example optimized copyback process 200 for computing and storing data change indicators used by the memory systems of FIGS. IA and IB.
[0007] FIGS. 3A-3C are flow diagrams of an example optimized copyback process implemented by the memory systems of FIGS. IA and IB. [0008] FIG. 4 is a flow diagram of an example optimized read operation implemented by the memory systems of FIGS. IA and IB.
[0009] FIG. 5 illustrates example data structures used by the copyback process of FIGS. 3A-3C.
DETAILED DESCRIPTION Examples of Memory Subsystems
[0010] FIG. IA is a block diagram of an example memory system 100 for implementing an optimized copyback process. In some implementations, the system 100 can include a memory subsystem 102 coupled to a host device 124 through an external bus 122 (e.g., Open NAND Flash Interface (ONFI), ATA). The host device 124 can be any electronic device including but not limited to smart phones, media players, text messaging devices, portable computers, solid state drives, digital cameras, etc. The memory subsystem 102 can be any non-volatile memory subsystem (e.g., managed NAND).
[0011] The host device 124 can include a system-on-chip (SoC) 126 and volatile memory 128. The SoC 126 can include hardware and software for interacting with the memory subsystem 102, such as transmitting read and write requests made by applications running on the host device 124.
[0012] The memory subsystem 102 can include non-volatile memory 104 (also referred to as "raw memory") and an external controller 116. The memory 104 can include a memory cell array 106, an internal state machine 108, a memory register 110 and data change indicator (DCI) 130. The controller 116 can include a processor 118, volatile memory 114 and error correction code (ECC) engine 120. Other configurations for the memory subsystem 102 are possible. For example, a cache register can be included in the data path between the memory cell array 106 and the memory register 110 to allow the internal state machine to read the next data page from the memory cell array 106 while transferring the current page to the controller 116 over internal bus 112.
[0013] FIG. IB is a block diagram of another example memory system 130 for implementing an optimized copyback process. The system 130 shows only the memory subsystem 102, the operation of which was described in reference to FIG. IA.
Copyback Operations
[0014] Copyback can be a memory subsystem command to move data from one page to another page. Copyback can be used in wear leveling and other nonvolatile memory management operations. In a typical copyback operation, a data page is read from the memory cell array 106 and stored in the memory register 110 by the internal state machine. The external controller 116 reads or clocks the data page out of the memory register 110 so that the processor 118 can perform a desired operation on the data page (e.g., an ECC operation). The processed data page can be written back to the memory register 110 by the controller 116. The internal state machine 108 can write the contents of the memory register 110 into a new data page in the memory cell array 106. By avoiding the transfer of the entire contents of register 110 to the external controller 116, processing times and power consumption can be reduced.
Example Process For Writing New Data Pages
[0015] FIG. 2 is a flow diagram of an example optimized copyback process 200 for computing and storing data change indicators used by the memory systems of FIGS. IA and IB. In some implementations, the process 200 can begin when new data page is transferred into a memory register of a memory subsystem (202). A DCI can be computed for the data page and stored in the memory subsystem (204). Some examples of data change indicators can include error detection codes (EDCs), including but not limited to: checksum, Hamming code, parity bit, cyclic redundancy check (CRC), polarity symbol reversal, Turbo code, etc. An EDC can also be part of an ECC, such as Reed-Solomon code, Reed-Muller code, Binary Golay code, and low-density parity-check codes. After the DCIs are computed and stored, the register contents can be written to non-volatile memory (206). DCIs can be used for the optimized copyback process described in reference to FIGS. 3A-3C.
Example Optimized Copyback Process
[0016] FIGS. 3A-3C are flow diagrams of an example optimized copyback process 300 implemented by the memory systems of FIGS. IA and IB. In some implementations, the process 300 can begin by reading a data page from non-volatile memory (e.g., memory cell array 106) and storing the data page in a memory register (302) (e.g., register 110). A DCI (e.g., DCI 130) can be verified for the data page in the memory register (304). In some implementations, the DCI can be previously computed and stored in the memory subsystem when the data page is first written to non-volatile memory (e.g., using process 200). In other implementations, the DCI can be computed "on the fly" as part of the read operation or as a separate operation. The memory subsystem can report to an external controller (e.g., external controller 116) that the read operation has completed (306).
[0017] If the DCI for the data page in the register indicates that the data page has changed (308), the data page can be transferred to the external controller (310), an ECC can be computed for the data page (312) and the ECC information for the data page can be corrected in the external controller (314). The data page and associated ECC can be transferred back to the memory register (316). A new DCI can be computed for the data page in the memory register (318).
[0018] If the DCI for the data page in the register indicates that the data page has not changed (308), an ECC can be computed for new metadata associated with the data page (320). The new metadata and associated ECC can be transferred to the memory register (322). A new DCI can be computed for the metadata in the memory register (324). The memory register contents can be written to a new data page in non-volatile memory (326).
Optimized Read Operation
[0019] FIG. 4 is a flow diagram of an example optimized read operation implemented by the memory systems of FIGS. IA and IB. In some implementations, the process 400 can begin by reading a data page from non-volatile memory and storing the data page in a memory register (402). A pre-computed DCI associated with the data page can be clocked into the memory register from a storage location in the memory subsystem and verified (404). The DCI can also be computed "on the fly." The status of the DCI can be read to determine if the data page has changed (406). [0020] If the data page has changed (408), an ECC for the new metadata associated with the data page can be computed and transferred, together with the new metadata to the memory register (412). A new DCI can be computed for the metadata in the memory register and the register contents can be written to a new data page in non-volatile memory (414).
[0021] If the data page has not changed (408), the memory register contents can be transferred to an external controller and an ECC can be computed by the external controller (410). An ECC for the new metadata associated with the data page can be computed and transferred by the external controller, together with the new metadata to the memory register (412). A new DCI can be computed for the metadata in the memory register and the register contents can be written to a new data page in non-volatile memory (414).
Example Data Structures
[0022] FIG. 5 illustrates example data structures used by the copyback process of FIGS. 3A-3C. In the example shown, a data page 500 in non-volatile memory includes metadata 502, metadata ECC 504, data 506 and data ECC 508. If the data has not changed than only the metadata 502 and the metadata ECC 504 are transferred from the register to the external controller 510 for processing. The processed metadata 502 and metadata ECC 504 are transferred back to the memory subsystem and stored in the memory register. The data page can the be written to a new data page in non-volatile memory (e.g., a memory cell array). [0023] A number of implementations have been described. Nevertheless, it will be understood that various modifications may be made. For example, elements of one or more implementations may be combined, deleted, modified, or supplemented to form further implementations. As yet another example, the logic flows depicted in the figures do not require the particular order shown, or sequential order, to achieve desirable results. In addition, other steps may be provided, or steps may be eliminated, from the described flows, and other components may be added to, or removed from, the described systems. Accordingly, other implementations are within the scope of the following claims.

Claims

CLAIMS WHAT IS CLAIMED IS:
1. A method comprising: obtaining a data page from non-volatile memory of a memory subsystem; determining if the data page has changed; and if the data page has changed, sending the data page to a controller for processing; if the data page is unchanged, sending metadata associated with the data page to the controller for processing.
2. The method of claim 1, where determining if the data page has changed, further comprises: reading a data change indicator for the data page.
3. The method of claim 2, where the data change indicator is associated with an error detection code.
4. The method of claim 1, where determining if the data page has changed, further comprises: computing a data change indicator for the data page; and determining if the data page has changed based on the data change indicator.
5. A system comprising: an interface adapted for coupling to a controller; non-volatile memory; a processor coupled to the non-volatile memory and the interface, the processor operable for obtaining a data page from the non-volatile memory; determining if the data page has changed; and if the data page has changed, sending the data page through the interface to the controller for processing; if the data page has not changed, sending metadata associated with the data page through the interface to the controller for processing.
6. The system of claim 5, where determining if the data page has changed, further comprises: reading a data change indicator for the data page.
7. The system of claim 6, where the data change indicator is associated with an error detection code.
8. The system of claim 5, where determining if the data page has changed, further comprises: computing a data change indicator for the data page; and determining if the data page has changed based on the data change indicator.
9. A method comprising: obtaining a data page and associated metadata from non-volatile memory of a memory subsystem coupled to a controller; storing the data page in a register of the memory subsystem; sending the data page and associated metadata from the register to the controller for processing; receiving a processed data page and associated metadata from the controller; determining if the processed data page has changed; if the processed data page has changed, writing the processed data page and associated metadata to the register in the memory subsystem; if the processed data page has not changed, writing the associated metadata to the register in the memory subsystem; and writing the register contents to the non-volatile memory.
10. The method of claim 9, where determining if the processed data page has changed, further comprises: reading a data change indicator for the processed data page.
11. The method of claim 10, where the data change indicator is associated with an error detection code.
12. The method of claim 9, where determining if the processed data page has changed, further comprises: computing a data change indicator for the processed data page; and determining if the processed data page has changed based on the data change indicator.
13. A system comprising: an interface adapted for coupling to a controller; non-volatile memory; a processor coupled to the non-volatile memory and the interface, the processor operable for obtaining a data page and associated metadata from nonvolatile memory of a memory subsystem coupled to the controller; storing the data page in a register of the memory system; sending the data page and associated metadata from the register through the interface to the controller for processing; receiving a processed data page and associated metadata from the controller through the interface; determining if the processed data page has changed; if the processed data page has changed, transferring the processed data page and associated metadata to the register in the memory subsystem; if the processed data page has not changed, transferring the processed metadata to the register in the memory subsystem; and writing the register contents to the non-volatile memory.
14. The system of claim 13, where determining if the processed data page has changed, further comprises: reading a data change indicator for the processed data page.
15. The system of claim 14, where the data change indicator is associated with an error detection code.
16. The system of claim 13, where determining if the processed data page has changed, further comprises: computing a data change indicator for the processed data page; and determining if the processed data page has changed based on the data change indicator.
17. A system comprising: means for obtaining a data page from non-volatile memory of a memory subsystem; means for determining if the data page has changed; and if the data page has changed, means for sending the data page to a controller for processing; if the data page is unchanged, means for sending metadata associated with the data page to the controller for processing.
PCT/US2009/039160 2008-04-30 2009-04-01 Copyback optimization for memory system WO2009134576A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
AT09739378T ATE535866T1 (en) 2008-04-30 2009-04-01 COPYBACK OPTIMIZATION FOR A STORAGE SYSTEM
KR1020107026742A KR101225924B1 (en) 2008-04-30 2009-04-01 Copyback optimization for memory system
ES09739378T ES2378371T3 (en) 2008-04-30 2009-04-01 Copy optimization for a memory system
CN2009801252990A CN102077176B (en) 2008-04-30 2009-04-01 Copyback optimization for memory system
KR1020127013247A KR101471262B1 (en) 2008-04-30 2009-04-01 Copyback optimization for memory system
EP09739378A EP2297642B1 (en) 2008-04-30 2009-04-01 Copyback optimization for memory system
JP2011507514A JP5192587B2 (en) 2008-04-30 2009-04-01 Memory system copyback optimization
HK11109601.9A HK1155530A1 (en) 2008-04-30 2011-09-09 Copyback optimization for memory system
HK11112791.3A HK1158344A1 (en) 2008-04-30 2011-11-25 Copyback optimization for memory system

Applications Claiming Priority (4)

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US4933008P 2008-04-30 2008-04-30
US61/049,330 2008-04-30
US12/193,638 2008-08-18
US12/193,638 US8185706B2 (en) 2008-04-30 2008-08-18 Copyback optimization for memory system

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US (2) US8185706B2 (en)
EP (2) EP2407883B1 (en)
JP (1) JP5192587B2 (en)
KR (2) KR101471262B1 (en)
CN (1) CN102077176B (en)
AT (1) ATE535866T1 (en)
ES (1) ES2378371T3 (en)
HK (3) HK1166390A1 (en)
WO (1) WO2009134576A1 (en)

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