WO2009142682A2 - A method and apparatus for on-site production of nitrate ions - Google Patents
A method and apparatus for on-site production of nitrate ions Download PDFInfo
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- WO2009142682A2 WO2009142682A2 PCT/US2009/002113 US2009002113W WO2009142682A2 WO 2009142682 A2 WO2009142682 A2 WO 2009142682A2 US 2009002113 W US2009002113 W US 2009002113W WO 2009142682 A2 WO2009142682 A2 WO 2009142682A2
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/20—Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
- C01B21/24—Nitric oxide (NO)
- C01B21/26—Preparation by catalytic or non-catalytic oxidation of ammonia
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/20—Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
- C01B21/24—Nitric oxide (NO)
- C01B21/26—Preparation by catalytic or non-catalytic oxidation of ammonia
- C01B21/28—Apparatus
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/20—Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
- C01B21/38—Nitric acid
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/20—Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
- C01B21/48—Methods for the preparation of nitrates in general
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/02—Preparation, purification or separation of ammonia
- C01C1/04—Preparation of ammonia by synthesis in the gas phase
- C01C1/0405—Preparation of ammonia by synthesis in the gas phase from N2 and H2 in presence of a catalyst
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
- C09K8/58—Compositions for enhanced recovery methods for obtaining hydrocarbons, i.e. for improving the mobility of the oil, e.g. displacing fluids
- C09K8/582—Compositions for enhanced recovery methods for obtaining hydrocarbons, i.e. for improving the mobility of the oil, e.g. displacing fluids characterised by the use of bacteria
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2101/00—Nature of the contaminant
- C02F2101/10—Inorganic compounds
- C02F2101/101—Sulfur compounds
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/15—N03-N
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2305/00—Use of specific compounds during water treatment
- C02F2305/06—Nutrients for stimulating the growth of microorganisms
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F3/00—Biological treatment of water, waste water, or sewage
- C02F3/28—Anaerobic digestion processes
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F3/00—Biological treatment of water, waste water, or sewage
- C02F3/34—Biological treatment of water, waste water, or sewage characterised by the microorganisms used
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F3/00—Biological treatment of water, waste water, or sewage
- C02F3/34—Biological treatment of water, waste water, or sewage characterised by the microorganisms used
- C02F3/345—Biological treatment of water, waste water, or sewage characterised by the microorganisms used for biological oxidation or reduction of sulfur compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2208/00—Aspects relating to compositions of drilling or well treatment fluids
- C09K2208/20—Hydrogen sulfide elimination
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S210/00—Liquid purification or separation
- Y10S210/902—Materials removed
- Y10S210/916—Odor, e.g. including control or abatement
Definitions
- the invention relates to a method and apparatus for on-site production of nitrate ions and bringing the nitrate ions into contact with an aqueous solution, particularly in an aqueous system used in oil-field applications.
- An aqueous system is used to inject a water solution into an oil reservoir.
- An aqueous system can include above-ground facilities equipped with an apparatus or some facility that collects or distributes aqueous solutions, such as oil wells, oil water separators, water storage tanks, pipelines, and injection wells.
- the injection process is known to produce hydrogen sulfide (H 2 S), however, which sours oil reservoirs.
- the hydrogen sulfide is produced by sulfate-reducing bacteria, which convert sulfate in the system to sulfide. Such bacteria can arise during the drilling for oil, but they also may be present indigenously, before the drilling. These bacteria and their affect on oil fields are described, for example, by J. R. Postgate, THE SULPHATE- REDUCING BACTERIA 2 nd ed. (Cambridge University Press, 1984).
- the hydrogen sulfide thus evolved causes corrosion of the equipment used to recover the oil and can drastically damage the production capabilities of the oil field and lowers the commercial value of the recovered crude oil. Accordingly, there has been intensive investigation directed at preventing the formation of hydrogen sulfide and/or removing the hydrogen sulfide once it is produced in oil fields.
- hydrogen sulfide present in an aqueous system is removed and the production of hydrogen sulfide by sulfate-reducing bacteria is eliminated by introducing into the system nitrate and nitrate compounds and/or molybdate ions, whereby denitrifying microorganisms out-compete the sulfate-reducing bacteria for the available carbon nutrients, which prevents the SRB from producing hydrogen sulfide.
- Nitrate for this purpose is typically formed by oxidizing ammonia or mined by conventional practice, and the resultant nitrate is transported and stored in close proximity to an oil field or other, often remote site for use. Transporting and storing large quantities of nitrate, or mixtures of nitrate with other solutions raises numerous safety and cost issues.
- a facility where nitrate ions are produced on-site and brought into contact with an aqueous system comprising an integrated system that is comprised of an extraction device for extracting water and natural gas present in proximity to said facility and extracting oxygen and nitrogen from ambient air present at the facility, and a chemical reactor for processing and reacting the water, natural gas, oxygen and nitrogen to form nitrate ions and a delivery device, interconnecting said integrated system to said aqueous system, for bringing said nitrate ions into contact with the aqueous system.
- a facility where nitrate ions are produced on-site and brought into contact with an aqueous system, comprising an integrated system that is comprised of (i) an extraction device for extracting water and natural gas in proximity to said facility and extracting oxygen and nitrogen from ambient air at the facility, and (ii) a chemical reactor for processing and reacting said water, natural gas, oxygen and nitrogen to form nitrate ions, a delivery device, interconnecting said integrated system to said aqueous system, for bringing said ions into contact with the aqueous system, a controller that is operably connected to each of said extraction device, said chemical reactor, and said delivery device and that is configured to control speed and volume of the nitrate ion production, and a sensor, operably connected to the controller, for monitoring the concentration of said ions in the aqueous system.
- the present invention provides a method for producing nitrate ions locally at a facility and bringing the nitrate ions into contact with an aqueous system in proximity to the facility.
- the method comprises extracting oxygen and nitrogen from the air in proximity to the facility, acquiring water and natural gas that is present in proximity to the facility, processing and reacting the acquired oxygen, nitrogen, water and natural gas to form nitrate ions and bringing the nitrate ions into contact with the aqueous system in proximity to the facility.
- Another aspect of the present invention relates to a method of preventing the formation of hydrogen sulfide in an aqueous system by locally producing nitrate ions at a facility, which method comprises extracting oxygen and nitrogen from the air in proximity to the facility, acquiring water and natural gas that is present in proximity to the facility, processing and reacting the acquired oxygen, nitrogen, water and natural gas to form nitrate ions, bringing said nitrate ions into contact with the aqueous system in proximity to the facility in a concentration sufficient to establish and enhance the growth of denitrifying bacteria, and monitoring the concentration of nitrate ions in the aqueous system.
- Yet a further aspect of the invention concerns a method for enhancing oil recovery in an aqueous system by locally producing nitrate ions at a facility.
- the method comprises the steps of extracting oxygen and nitrogen from the air in proximity to the facility, acquiring water and natural gas that is present in proximity to the facility, processing and reacting the acquired oxygen, nitrogen, water and natural gas to form nitrate ions, bringing said nitrate ions, into contact with the aqueous system in proximity to the facility in a concentration sufficient to enhance oil recovery, and monitoring the concentration of nitrate ions in the aqueous system.
- Figure 1 is a block diagram of a facility where nitrate ions are produced on- site and brought into contact with an aqueous system, according to one embodiment of the present invention.
- Figure 2 is a block diagram of an extraction device, according to one embodiment of the present invention.
- Figure 3 is a block diagram of a reactor, according to one embodiment of the present invention.
- Figure 4 is a block diagram of a delivery device, according to one embodiment of the present invention.
- Figure 5 is a flow chart, illustrating a method for locally producing nitrate ions at a facility, according to one embodiment of the present invention.
- the present invention can be used anywhere a need exists to control the hydrogen sulfide generation by SRB or to remove preformed hydrogen sulfide in an aqueous system.
- Hydrogen sulfide corrodes oil recovery processing equipment and can cause severe damage to the oil-recovery capabilities of the equipment, which lowers the market value of the oil produced.
- the presence of H 2 S in pipelines, tanks, and other water handling equipment and facilities must be regulated.
- the addition of nitrate-based solutions affects both removal of preformed H 2 S and in addition prevents further generation of H 2 S by SRB, which may be present in the system or may be added later, such as during the drilling operation of oil fields.
- Nitrate for this purpose typically is mined or formed by oxidizing ammonia, which, by conventional practice, is transported and stored in close proximity to an oil field or other, often remote site for processing and use.
- the attendant technical, safety, and cost issues of transporting, blending, and storing nitrate and nitrate solutions are avoided, pursuant to this invention, by providing for the on-site production of nitrate ions by, for example, means of ammonia oxidation.
- the apparatus and method of the invention is not limited to H 2 S reduction or oil field applications.
- the present invention can be used to control hydrogen sulfide in oil storage tanks, oil and gas pipelines, cooling tower water, coal slurry pipelines, and other tanks or equipment that contain water or have a water phase.
- the apparatus and method can also be used in pits or water containment ponds or in water injection systems where water is put underground.
- the apparatus and method can be used in the mining industry for metal recovery (waterflooding), landfills, in farming areas to produce fertilizer or various other environmental applications.
- a facility 1 for producing nitrate ions on-site and bringing those ions into contact with an aqueous system 20.
- An aqueous system 20 can include above-ground facilities equipped with apparatus or equipment that collects or distributes aqueous solutions, such as oil wells, oil-well separators, water storage tanks, pipelines, and injection wells.
- the source of the water present in the aqueous system 20 can be seawater, recycled produced water or aquifer water.
- the aqueous system 20 contains SRB and/or denitrifying microorganisms and sulfide oxidizing microorganisms before nitrate is brought into contact with the aqueous system 20.
- the aqueous system 20 indigenously comprises a carbon-source nutrient for the denitrifying microorganisms.
- the integrated system 10 shown in Figure 1, comprises an extraction device 30 for extracting water, natural gas, oxygen or oxygen-containing gas and nitrogen (from ambient air) present in proximity to the facility 1.
- the integrated system 10 is relatively small so that it can be transported to and from various aqueous systems 20.
- the integrated system can be the size of a conventional office desk, approximately three (3) feet high, two (2) feet wide and five (5) feet long.
- the size of the integrated system 10 can be increased or decreased to accommodate the size and requirements of the facility in which it will operate.
- the integrated system 10 may have wheels and/or skids that allow the integrated system 10 to be transported to various locations.
- the extraction device 30 further comprises a pump 31 for acquiring the natural gas and water, a compressor 32 for extracting ambient air in proximity to the facility 1 and an air separator 33 for extracting nitrogen from the extracted ambient air.
- the integrated system 10 also includes a reactor 40 for reacting the oxygen, water, natural gas and nitrogen to form nitrate ions.
- the reactor 40 comprises an ammonia reactor 41 for carrying out a Haber-type process and a chemical reactor 42 for carrying out an Ostwald-type process.
- a Haber-type process may be any process that reacts and processes nitrogen, oxygen, water and natural gas to reduce nitrogen to ammonia, e.g., the Haber process.
- An Ostwald-type process may be any process that reacts and processes ammonia to obtain nitric oxides, nitric acid and nitrate-nitrite salts, e.g., the Ostwald process.
- a delivery device 50 connected to the reactor 40, brings the formed nitrate ions into contact with the aqueous solution.
- the delivery device 50 comprises a pump 51 for pumping the nitrate ions formed by the reactor 40 through an aqueduct 52 and into the aqueous system 20.
- a controller 60 is operably connected to the extraction device 30, the reactor 40 and the delivery device 50.
- the controller 60 controls the speed and volume of nitrate production.
- a sensor 70 for monitoring the concentration of nitrate ions in the aqueous system 20 is operably connected to the controller 60.
- the portable integrated system 10 is placed in proximity to a facility having an aqueous system 20 that requires treatment.
- the extraction device 30 of the integrated system 10 extracts oxygen and nitrogen from the air in proximity to the facility 1 (Step 110).
- the extraction device 30 acquires an amount of water and natural gas present in proximity to the facility (Step 120).
- the integrated system 10 processes and reacts the nitrogen, oxygen, water and natural gas to produce nitrate ions (Step 130).
- the adsorption process (processing) using air, enriched air or oxygen takes place at temperatures of 0° to 100° C at gauge pressures of 0 to 20 bar.
- the reactions in the oxidation of ammonia to nitric oxide for the manufacture of nitric acid may be operated at temperatures of 750° to 1000° C (preferably 850° to 950° C) with gauge pressures of zero to 14 bar.
- any known process can be used that forms nitrate ions, given nitrogen, oxygen, water, and natural gas as reactants.
- the reactor 40 comprises an ammonia reactor 41 and a chemical reactor 42.
- the ammonia reactor 41 implements the reduction of nitrogen to ammonia using a Haber-type process to synthesize ammonia.
- the chemical reactor 42 implements an Ostwald-type process, for carrying out the oxidation or conversion of ammonia to nitric oxides, nitric acid and nitrate-nitrite salts which yields nitrate ions.
- the nitrate ions formed by the reactor 40 then are brought into contact with the aqueous system 20 via a delivery device 50.
- the nitrate ions may be added to the aqueous system 20 in either a batch or continuous manner.
- the aqueous system 20 is contacted with nitrate ions once.
- the aqueous system 20 is repeatedly treated with the nitrate ions.
- the choice of treatment methodology is conditioned by the system to be treated. Thus, if a single oil well is to be treated then a single batch injection (although over as much as 3 -days) of nitrate and nitrite may be most expedient.
- the nitrate may be added to the system in any desired form.
- any desired form of the nitrate may be added so long as the nitrate ions will perform their desired function once added to the aqueous system 20.
- Counter ions such as calcium, ammonium, sodium or potassium can be used.
- compounds which will yield nitrate ions once added to an aqueous system can be used.
- the controller 60 and sensor 70 regulate and monitor the concentration of nitrate ions injected into the aqueous solution 20 (Step 150).
- the application for which the integrated system 10 is being used e.g., H 2 S reduction, enhanced oil recovery
- H 2 S reduction, enhanced oil recovery will determine how the controller 60 and sensor 70 will operate. Considerations for H 2 S reduction and enhanced oil recovery are discussed in turn below.
- nitrate ion is added to deny the SRB the carbon source that they need to convert the sulfate to sulfide, by encouraging the growth of denitrifying organisms (denitrifiers), in order that they consume the carbon source utilized by the SRB previously. Accordingly, the amount of nitrate added depends on the amount of carbon-source present in the aqueous system 20 to be treated.
- the water to be treated contains 1000 ppm of acetate, which was previously all used by the SRB to convert sulfate to sulfide, enough of the nitrate should be added so that the denitrifying microorganisms consume the 1000 ppm of acetate before the SRB.
- the nitrate treatment operates by promoting the growth of denitrifying microorganisms that are usually present in the aqueous system 20 along with the SRB. If these denitrifying microorganisms are not present or not present in an adequate amount, however, they may be added to the aqueous system 20 to be treated along with the nitrate ions. For example, denitrifying organisms can be added to the aqueous system 20 before, concomitant with or after the nitrate ions are brought into contact with the aqueous system 20. They may be added in a batch manner or in a continuous process.
- Denitrifiers are known to those skilled in the art and are described, for example in "The Prokaryotes: A Handbook on Habitats, Isolation, and Identification of Bacteria", Volumes 1-4 (Springer- Verlag, 1981). These bacteria utilize nitrate or nitrite as a terminal electron acceptor, i.e., gain energy by respiring it as animals do with oxygen. Some of the bacteria convert the nitrate (NO 3 ) to NO 2 , N 2 O, and N 2 , while others convert it to NH 3 . Denitrifiers can grow on the same carbon/energy source that the SRB utilize and as noted previously, denitrifiers compete more effectively for the carbon/energy sources, thus denying their use for SRB growth and subsequent sulfide formation.
- the denitrifying bacteria compete with the SRB for the carbon-based nutrients that are present in the aqueous system 20 or which may be added to the aqueous system 20. That is, both types of microorganisms compete for the same type of nutrients, and due to thermodynamic and physiological considerations, the denitrifying bacteria are much better competitors. Hence, the SRB are left without sufficient carbon source to grow and produce hydrogen sulfide. This lack of carbon nutrient may not kill the SRB directly, but it does not allow the SRB to produce hydrogen sulfide.
- a prophylactic treatment with nitrate and if need be a denitrifier would preclude future SRB activity.
- a carbon source may be added along with the denitrifiers so as to encourage the growth of the denitrifiers, thus preventing any SRB which may arise in the future from producing hydrogen sulfide, due to the consumption of available nutrients by the denitrifiers, leaving none for the SRB.
- the carbon sources that are present in the system and/or that can be added if need be, in addition to or in place of acetates, propionates, and butyrates, include any known carbon nutrients for denitrifiers.
- simple carbon/hydrogen compounds such as Krebs cycle intermediates, malonate, citrates, lactates, ethanol, glycerol and the like can be used as nutrients to grow the denitrifying organisms.
- Most oil fields indigenously contain the necessary carbon sources to grow the denitrifying bacteria.
- compounds that serve as nutrients are often added.
- additional carbon sources for the denitrifying organisms can be added, along with other desired nutrients such as phosphate salts, in order to affect a nutritional balance that encourages the establishment and growth of the denitrifying organisms.
- the present invention can be used to treat a system which contains SRB which are producing hydrogen sulfide, or a system containing hydrogen sulfide due to the presence of SRB in the past, or to treat a system which may contain SRB in the future.
- This system will remove any preformed hydrogen sulfide and prevent its formation in the future by SRB.
- the reactor 40 in addition to nitrate ions, produces nitrite ions, nitrogen oxide and other untreated compounds.
- the nitrite ions, nitrogen oxide, untreated compounds and nitrate ions are all brought into contact with the aqueous system 20.
- the method and apparatus injects nitrite and/or molybdate into the aqueous system 20.
- nitrate and nitrite or the combination of nitrate, nitrite, and molybdate affects both removal of preformed H 2 S and in addition prevents further generation OfH 2 S by the SRB, which may be present in the system or may be added later, such as during the drilling operation of oil fields.
- the nitrite is added because it helps, in a thermodynamic manner, the growth of the denitrif ⁇ ers and, hence, of their consumption of the carbon source.
- the nitrites react with the preformed hydrogen sulfide made by the SRB, thus immediately lowering the preformed sulfide.
- the nitrite also acts to inhibit the actions of the SRB in their further production of hydrogen sulfide.
- the nitrites react with the preformed hydrogen sulfide, made by the SRB, immediately lowering the preformed sulfide. Finally, the nitrite inhibits the action of the SRB in their further production of hydrogen sulfide.
- the action of the nitrite and nitrate is synergistic. That is, by adding both together, less of both are needed to accomplish the removal of the H 2 S and prevention of further H 2 S generation by SRB.
- the appropriate amount of ions added depends on the parameters of the system to be treated, including carbon levels, hydrogen sulfide level, current SRB level, and the like. Those who are knowledgeable in this field, using the principles described above, readily can determine the appropriate amount of ions to be added, taking into consideration that the system should allow the denitrifiers to use up the available carbon sources, thereby to prevent SRB from producing hydrogen sulfide and to remove any preformed hydrogen sulfide.
- the controller 60 determines the concentration of nitrate brought into contact with the aqueous system to carryout enhanced oil recovery, also known as a microbial enhanced oil recovery process (MEOR).
- the denitrifying microorganisms will act as agents, which will help in the release of oil by mechanisms such as water diversion, biopolymers, biosolvents, biosurfactants, N 2 formation, gas production, pH change, and the like during microbial enhanced oil recovery processes (MEOR). That is, the denitrifying bacteria and products of such bacteria cause the release of oil by the above noted mechanisms including water diversion occurring in the high permeability zones directing the water to be preferentially diverted into lower permeability zones, causing the enhanced displacement of oil.
- an aqueous system 20 not only removes hydrogen sulfide and prevents the formation of hydrogen sulfide, but also results in an aqueous system 20 which can be used in MEOR processes.
- the aqueous system 20 is treated with nitrate ions either before or during the oil-recovering steps so that hydrogen sulfide does not enter the subterranean formation.
- the aqueous system 20 may then be used in enhanced oil recovery processes, which are known per se.
- the treated aqueous system 20 is used to inject a subterranean oil- bearing formation to displace oil from the formation.
- the aqueous system 20 containing denitrifiers with reduced or no hydrogen sulfide is more effective in recovering oil because the oil does not become sour and there is less corrosion which increases the expense of the operation and ultimately the abandonment of oil-fields. Furthermore, since there is less or no hydrogen sulfide, iron sulfide is not produced by the reaction of hydrogen sulfide with iron. Iron sulfide is undesirable in oil fields because it acts as a plugging agent.
- molybdates and/or nitrite may be added in combination with nitrate to the aqueous system 20.
- the molybdate serves to kill or inhibit the SRB.
- the molybdates are added in such an amount so as not to kill or inhibit the denitrifying bacteria.
- much less molybdate is required to obtain the desired inhibition of SRB, than in the known process of using molybdates alone to kill and/or inhibit the SRB.
- nitrate and/or nitrite and molybdate thus provides advantages over the known use of molybdate alone.
- vast amounts of molybdate are needed if used alone, such as greater than 3000 ppm, whereas only about 1 to about 200 ppm, preferably about 5 to about 100 ppm of molybdate are needed when used in combination with the nitrate and nitrite ions.
- the molybdate to be added can be in the form of any molybdate salt or compound, which yields molybdate ions.
- sodium and lithium molybdate are used due to economic and availability considerations.
- the present invention can be used to treat an aqueous system 20 for use in enhanced oil recovery.
- the present invention reduces the amount of hydrogen sulfide present in subterranean formations, which prevents oil souring and corrosion.
Abstract
Description
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801182076A CN102036911B (en) | 2008-05-22 | 2009-04-03 | A method and apparatus for on-site production of nitrate ions |
EP09750913.7A EP2297029A4 (en) | 2008-05-22 | 2009-04-03 | A method and apparatus for on-site production of nitrate ions |
BRPI0912686A BRPI0912686A2 (en) | 2008-05-22 | 2009-04-03 | facilities and methods of producing nitrate ions locally and bringing nitrate ions into contact with the aqueous system in the vicinity of the facility, preventing the formation of hydrogen sulfide in the aqueous system by local production of nitrate ions and enhancing oil recovery in aqueous system by local production of nitrate ions |
CA2724957A CA2724957A1 (en) | 2008-05-22 | 2009-04-03 | A method and apparatus for on-site production of nitrate ions |
JP2011510485A JP5308517B2 (en) | 2008-05-22 | 2009-04-03 | Method and apparatus for on-site production of nitrate ions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/125,582 | 2008-05-22 | ||
US12/125,582 US7514058B1 (en) | 2008-05-22 | 2008-05-22 | Apparatus for on-site production of nitrate ions |
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WO2009142682A2 true WO2009142682A2 (en) | 2009-11-26 |
WO2009142682A3 WO2009142682A3 (en) | 2010-01-14 |
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PCT/US2009/002113 WO2009142682A2 (en) | 2008-05-22 | 2009-04-03 | A method and apparatus for on-site production of nitrate ions |
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US (2) | US7514058B1 (en) |
EP (1) | EP2297029A4 (en) |
JP (1) | JP5308517B2 (en) |
KR (1) | KR20110028282A (en) |
CN (1) | CN102036911B (en) |
BR (1) | BRPI0912686A2 (en) |
CA (1) | CA2724957A1 (en) |
MY (1) | MY150831A (en) |
WO (1) | WO2009142682A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
JP5308517B2 (en) | 2013-10-09 |
JP2011521134A (en) | 2011-07-21 |
US7514058B1 (en) | 2009-04-07 |
CA2724957A1 (en) | 2009-11-26 |
CN102036911B (en) | 2012-12-26 |
CN102036911A (en) | 2011-04-27 |
KR20110028282A (en) | 2011-03-17 |
WO2009142682A3 (en) | 2010-01-14 |
US7604741B1 (en) | 2009-10-20 |
EP2297029A4 (en) | 2013-12-04 |
BRPI0912686A2 (en) | 2016-01-26 |
MY150831A (en) | 2014-02-28 |
EP2297029A2 (en) | 2011-03-23 |
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