WO2010014626A3 - Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition - Google Patents

Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition Download PDF

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Publication number
WO2010014626A3
WO2010014626A3 PCT/US2009/051983 US2009051983W WO2010014626A3 WO 2010014626 A3 WO2010014626 A3 WO 2010014626A3 US 2009051983 W US2009051983 W US 2009051983W WO 2010014626 A3 WO2010014626 A3 WO 2010014626A3
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WO
WIPO (PCT)
Prior art keywords
films
vapor deposition
mechanical properties
chemical vapor
high mechanical
Prior art date
Application number
PCT/US2009/051983
Other languages
French (fr)
Other versions
WO2010014626A2 (en
Inventor
Kang Sub Yim
Alexandros T. Demos
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011521251A priority Critical patent/JP5312588B2/en
Priority to KR1020117004857A priority patent/KR101139593B1/en
Priority to CN200980130954.1A priority patent/CN102113099B/en
Publication of WO2010014626A2 publication Critical patent/WO2010014626A2/en
Publication of WO2010014626A3 publication Critical patent/WO2010014626A3/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment

Abstract

A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si-CX-Si or -Si-O-(CH2)n-O-Si-. Low dielectric constant films provided herein include films that include Si-CX-Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
PCT/US2009/051983 2008-07-31 2009-07-28 Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition WO2010014626A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011521251A JP5312588B2 (en) 2008-07-31 2009-07-28 Novel silicon precursor for making ultra-low K films with high mechanical properties by plasma enhanced chemical vapor deposition
KR1020117004857A KR101139593B1 (en) 2008-07-31 2009-07-28 Method for depositing a low dielectric constant film
CN200980130954.1A CN102113099B (en) 2008-07-31 2009-07-28 Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/183,915 2008-07-31
US12/183,915 US7989033B2 (en) 2007-07-12 2008-07-31 Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
WO2010014626A2 WO2010014626A2 (en) 2010-02-04
WO2010014626A3 true WO2010014626A3 (en) 2010-04-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/051983 WO2010014626A2 (en) 2008-07-31 2009-07-28 Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition

Country Status (6)

Country Link
US (1) US7989033B2 (en)
JP (1) JP5312588B2 (en)
KR (1) KR101139593B1 (en)
CN (1) CN102113099B (en)
TW (1) TWI388685B (en)
WO (1) WO2010014626A2 (en)

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US8298965B2 (en) * 2008-09-03 2012-10-30 American Air Liquide, Inc. Volatile precursors for deposition of C-linked SiCOH dielectrics
SG183291A1 (en) 2010-02-17 2012-09-27 Air Liquide VAPOR DEPOSITION METHODS OF SiCOH LOW-K FILMS
JP2011254041A (en) * 2010-06-04 2011-12-15 Renesas Electronics Corp Semiconductor device
US20120121823A1 (en) * 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
US9054110B2 (en) 2011-08-05 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Low-K dielectric layer and porogen
KR102053350B1 (en) * 2013-06-13 2019-12-06 삼성전자주식회사 Method of Semiconductor Device Having a low-k dielectric
CN105720005B (en) * 2014-12-04 2019-04-26 中芯国际集成电路制造(上海)有限公司 The forming method of ultra-low K dielectric layer
US20160214165A1 (en) * 2015-01-26 2016-07-28 General Electric Company Porous ceramic materials for investment casting
KR102624608B1 (en) 2016-01-19 2024-01-16 삼성전자주식회사 Method for forming low k dielectric layer and method for manufacturing semiconductor device using the same
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
CN115992345A (en) * 2017-09-14 2023-04-21 弗萨姆材料美国有限责任公司 Composition and method for depositing silicon-containing films
SG11202011887XA (en) * 2018-06-15 2020-12-30 Versum Materials Us Llc Siloxane compositions and methods for using the compositions to deposit silicon containing films
US20240087881A1 (en) * 2022-08-26 2024-03-14 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films

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Also Published As

Publication number Publication date
US7989033B2 (en) 2011-08-02
KR101139593B1 (en) 2012-07-02
CN102113099B (en) 2013-06-12
KR20110052674A (en) 2011-05-18
US20090017231A1 (en) 2009-01-15
TW201012962A (en) 2010-04-01
WO2010014626A2 (en) 2010-02-04
JP2011530174A (en) 2011-12-15
CN102113099A (en) 2011-06-29
JP5312588B2 (en) 2013-10-09
TWI388685B (en) 2013-03-11

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