WO2010014626A3 - Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition - Google Patents
Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition Download PDFInfo
- Publication number
- WO2010014626A3 WO2010014626A3 PCT/US2009/051983 US2009051983W WO2010014626A3 WO 2010014626 A3 WO2010014626 A3 WO 2010014626A3 US 2009051983 W US2009051983 W US 2009051983W WO 2010014626 A3 WO2010014626 A3 WO 2010014626A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- films
- vapor deposition
- mechanical properties
- chemical vapor
- high mechanical
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011521251A JP5312588B2 (en) | 2008-07-31 | 2009-07-28 | Novel silicon precursor for making ultra-low K films with high mechanical properties by plasma enhanced chemical vapor deposition |
KR1020117004857A KR101139593B1 (en) | 2008-07-31 | 2009-07-28 | Method for depositing a low dielectric constant film |
CN200980130954.1A CN102113099B (en) | 2008-07-31 | 2009-07-28 | Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/183,915 | 2008-07-31 | ||
US12/183,915 US7989033B2 (en) | 2007-07-12 | 2008-07-31 | Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010014626A2 WO2010014626A2 (en) | 2010-02-04 |
WO2010014626A3 true WO2010014626A3 (en) | 2010-04-15 |
Family
ID=41610936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/051983 WO2010014626A2 (en) | 2008-07-31 | 2009-07-28 | Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition |
Country Status (6)
Country | Link |
---|---|
US (1) | US7989033B2 (en) |
JP (1) | JP5312588B2 (en) |
KR (1) | KR101139593B1 (en) |
CN (1) | CN102113099B (en) |
TW (1) | TWI388685B (en) |
WO (1) | WO2010014626A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8298965B2 (en) * | 2008-09-03 | 2012-10-30 | American Air Liquide, Inc. | Volatile precursors for deposition of C-linked SiCOH dielectrics |
SG183291A1 (en) | 2010-02-17 | 2012-09-27 | Air Liquide | VAPOR DEPOSITION METHODS OF SiCOH LOW-K FILMS |
JP2011254041A (en) * | 2010-06-04 | 2011-12-15 | Renesas Electronics Corp | Semiconductor device |
US20120121823A1 (en) * | 2010-11-12 | 2012-05-17 | Applied Materials, Inc. | Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
US9054110B2 (en) | 2011-08-05 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-K dielectric layer and porogen |
KR102053350B1 (en) * | 2013-06-13 | 2019-12-06 | 삼성전자주식회사 | Method of Semiconductor Device Having a low-k dielectric |
CN105720005B (en) * | 2014-12-04 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | The forming method of ultra-low K dielectric layer |
US20160214165A1 (en) * | 2015-01-26 | 2016-07-28 | General Electric Company | Porous ceramic materials for investment casting |
KR102624608B1 (en) | 2016-01-19 | 2024-01-16 | 삼성전자주식회사 | Method for forming low k dielectric layer and method for manufacturing semiconductor device using the same |
US10249489B2 (en) * | 2016-11-02 | 2019-04-02 | Versum Materials Us, Llc | Use of silyl bridged alkyl compounds for dense OSG films |
CN115992345A (en) * | 2017-09-14 | 2023-04-21 | 弗萨姆材料美国有限责任公司 | Composition and method for depositing silicon-containing films |
SG11202011887XA (en) * | 2018-06-15 | 2020-12-30 | Versum Materials Us Llc | Siloxane compositions and methods for using the compositions to deposit silicon containing films |
US20240087881A1 (en) * | 2022-08-26 | 2024-03-14 | Applied Materials, Inc. | Systems and methods for depositing low-k dielectric films |
Citations (6)
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US20020142579A1 (en) * | 2001-01-17 | 2002-10-03 | Vincent Jean Louise | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
WO2005078155A1 (en) * | 2004-02-04 | 2005-08-25 | Applied Materials, Inc. | Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen |
US20060079099A1 (en) * | 2004-10-13 | 2006-04-13 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
US7169715B2 (en) * | 2003-03-21 | 2007-01-30 | Intel Corporation | Forming a dielectric layer using porogens |
US20070117408A1 (en) * | 2005-11-22 | 2007-05-24 | International Business Machines Corporation | Method for reducing film stress for sicoh low-k dielectric materials |
US20070161256A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | SiCOH film preparation using precursors with built-in porogen functionality |
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US3560435A (en) * | 1968-10-24 | 1971-02-02 | Dow Corning | Method of polymerizing organosilicon compounds using a nitro catalyst |
US5118530A (en) * | 1990-11-28 | 1992-06-02 | Dow Corning Corporation | Use of hydrogen silsesquioxane resin fractions as coating materials |
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
JP3756666B2 (en) * | 1998-05-08 | 2006-03-15 | 松下電器産業株式会社 | Method for forming porous film and apparatus for forming the same |
US6541367B1 (en) * | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
KR20010106905A (en) * | 2000-05-24 | 2001-12-07 | 황 철 주 | Method of forming a SiOC thin film having low dielectric constant |
SG98468A1 (en) * | 2001-01-17 | 2003-09-19 | Air Prod & Chem | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US6570256B2 (en) * | 2001-07-20 | 2003-05-27 | International Business Machines Corporation | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
US7384471B2 (en) * | 2002-04-17 | 2008-06-10 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
EP1504138A2 (en) * | 2002-05-08 | 2005-02-09 | Applied Materials, Inc. | Method for using low dielectric constant film by electron beam |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
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US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
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US6897163B2 (en) * | 2003-01-31 | 2005-05-24 | Applied Materials, Inc. | Method for depositing a low dielectric constant film |
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US7345000B2 (en) * | 2003-10-10 | 2008-03-18 | Tokyo Electron Limited | Method and system for treating a dielectric film |
US20050161060A1 (en) * | 2004-01-23 | 2005-07-28 | Johnson Andrew D. | Cleaning CVD chambers following deposition of porogen-containing materials |
JP4202951B2 (en) * | 2004-03-08 | 2008-12-24 | 東京エレクトロン株式会社 | Wiring formation method for semiconductor device |
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US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
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US7297376B1 (en) * | 2006-07-07 | 2007-11-20 | Applied Materials, Inc. | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers |
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-
2008
- 2008-07-31 US US12/183,915 patent/US7989033B2/en active Active
-
2009
- 2009-07-28 JP JP2011521251A patent/JP5312588B2/en active Active
- 2009-07-28 CN CN200980130954.1A patent/CN102113099B/en not_active Expired - Fee Related
- 2009-07-28 WO PCT/US2009/051983 patent/WO2010014626A2/en active Application Filing
- 2009-07-28 KR KR1020117004857A patent/KR101139593B1/en active IP Right Grant
- 2009-07-30 TW TW098125718A patent/TWI388685B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020142579A1 (en) * | 2001-01-17 | 2002-10-03 | Vincent Jean Louise | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US7169715B2 (en) * | 2003-03-21 | 2007-01-30 | Intel Corporation | Forming a dielectric layer using porogens |
WO2005078155A1 (en) * | 2004-02-04 | 2005-08-25 | Applied Materials, Inc. | Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen |
US20060079099A1 (en) * | 2004-10-13 | 2006-04-13 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
US20070117408A1 (en) * | 2005-11-22 | 2007-05-24 | International Business Machines Corporation | Method for reducing film stress for sicoh low-k dielectric materials |
US20070161256A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | SiCOH film preparation using precursors with built-in porogen functionality |
Also Published As
Publication number | Publication date |
---|---|
US7989033B2 (en) | 2011-08-02 |
KR101139593B1 (en) | 2012-07-02 |
CN102113099B (en) | 2013-06-12 |
KR20110052674A (en) | 2011-05-18 |
US20090017231A1 (en) | 2009-01-15 |
TW201012962A (en) | 2010-04-01 |
WO2010014626A2 (en) | 2010-02-04 |
JP2011530174A (en) | 2011-12-15 |
CN102113099A (en) | 2011-06-29 |
JP5312588B2 (en) | 2013-10-09 |
TWI388685B (en) | 2013-03-11 |
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