WO2010030493A3 - Transistor with a passive gate and methods of fabricating the same - Google Patents

Transistor with a passive gate and methods of fabricating the same Download PDF

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Publication number
WO2010030493A3
WO2010030493A3 PCT/US2009/054646 US2009054646W WO2010030493A3 WO 2010030493 A3 WO2010030493 A3 WO 2010030493A3 US 2009054646 W US2009054646 W US 2009054646W WO 2010030493 A3 WO2010030493 A3 WO 2010030493A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
fabricating
methods
same
drain
Prior art date
Application number
PCT/US2009/054646
Other languages
French (fr)
Other versions
WO2010030493A2 (en
Inventor
Werner Juengling
Original Assignee
Micron Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology, Inc. filed Critical Micron Technology, Inc.
Priority to CN200980136187.5A priority Critical patent/CN102160158B/en
Publication of WO2010030493A2 publication Critical patent/WO2010030493A2/en
Publication of WO2010030493A3 publication Critical patent/WO2010030493A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Disclosed is a device having a transistor (204, 244, 286) that includes a source, a drain, a channel region extending between the source and the drain, a gate (196, 238, 284) disposed near the channel region, and a conductive member (197, 240, 264) disposed opposite of the channel region from the gate (196, 238, 284). The conductive member (197, 240, 264) may not overlap the source, the drain, or both the source and the drain.
PCT/US2009/054646 2008-09-15 2009-08-21 Transistor with a passive gate and methods of fabricating the same WO2010030493A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200980136187.5A CN102160158B (en) 2008-09-15 2009-08-21 Transistor with passive gate and methods of fabricating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/210,305 2008-09-15
US12/210,305 US8148776B2 (en) 2008-09-15 2008-09-15 Transistor with a passive gate

Publications (2)

Publication Number Publication Date
WO2010030493A2 WO2010030493A2 (en) 2010-03-18
WO2010030493A3 true WO2010030493A3 (en) 2011-04-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/054646 WO2010030493A2 (en) 2008-09-15 2009-08-21 Transistor with a passive gate and methods of fabricating the same

Country Status (5)

Country Link
US (1) US8148776B2 (en)
KR (1) KR101626178B1 (en)
CN (1) CN102160158B (en)
TW (1) TWI456759B (en)
WO (1) WO2010030493A2 (en)

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US8921899B2 (en) 2010-11-19 2014-12-30 Micron Technology, Inc. Double gated 4F2 dram CHC cell and methods of fabricating the same
US9553193B2 (en) 2010-11-19 2017-01-24 Micron Technology, Inc. Double gated fin transistors and methods of fabricating and operating the same
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US8796085B2 (en) * 2012-10-12 2014-08-05 Viktor Koldiaev Vertical super-thin body semiconductor on dielectric wall devices and methods of their fabrication
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
JP5961563B2 (en) * 2013-01-25 2016-08-02 株式会社豊田中央研究所 Manufacturing method of semiconductor device
US9076870B2 (en) * 2013-02-21 2015-07-07 United Microelectronics Corp. Method for forming fin-shaped structure
US9805934B2 (en) * 2013-11-15 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Formation of contact/via hole with self-alignment
US9171855B2 (en) * 2013-12-30 2015-10-27 Globalfoundries Singapore Pte. Ltd. Three-dimensional non-volatile memory
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Also Published As

Publication number Publication date
TWI456759B (en) 2014-10-11
WO2010030493A2 (en) 2010-03-18
TW201021210A (en) 2010-06-01
CN102160158B (en) 2013-05-22
US20100066440A1 (en) 2010-03-18
KR20110057235A (en) 2011-05-31
CN102160158A (en) 2011-08-17
KR101626178B1 (en) 2016-05-31
US8148776B2 (en) 2012-04-03

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