WO2010048227A3 - Ultraviolet-transmitting microwave reflector comprising a micromesh screen - Google Patents

Ultraviolet-transmitting microwave reflector comprising a micromesh screen Download PDF

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Publication number
WO2010048227A3
WO2010048227A3 PCT/US2009/061380 US2009061380W WO2010048227A3 WO 2010048227 A3 WO2010048227 A3 WO 2010048227A3 US 2009061380 W US2009061380 W US 2009061380W WO 2010048227 A3 WO2010048227 A3 WO 2010048227A3
Authority
WO
WIPO (PCT)
Prior art keywords
micromesh screen
ultraviolet
microwave reflector
transmitting microwave
micromesh
Prior art date
Application number
PCT/US2009/061380
Other languages
French (fr)
Other versions
WO2010048227A2 (en
Inventor
Tuan Anh Nguyen
Yao-Hung Yang
Sanjeev Baluja
Thomas Nowak
Juan Carlos Rocha-Alvarez
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011533278A priority Critical patent/JP2012506639A/en
Priority to CN2009801424446A priority patent/CN102197466A/en
Publication of WO2010048227A2 publication Critical patent/WO2010048227A2/en
Publication of WO2010048227A3 publication Critical patent/WO2010048227A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/08—Perforated or foraminous objects, e.g. sieves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

An ultraviolet-transmitting microwave reflector for a substrate processing chamber, comprises a micromesh screen extending across the metallic frame. In one version, the micromesh screen comprises at least one electroformed layer. A method of fabricating the microwave reflector comprises electroforming a metallic frame surrounding a micromesh screen such that the micromesh screen comprises an open area of greater than 80% of the total area.
PCT/US2009/061380 2008-10-21 2009-10-20 Ultraviolet-transmitting microwave reflector comprising a micromesh screen WO2010048227A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011533278A JP2012506639A (en) 2008-10-21 2009-10-20 Ultraviolet-transmissive microwave reflector with micromesh screen
CN2009801424446A CN102197466A (en) 2008-10-21 2009-10-20 Ultraviolet-transmitting microwave reflector comprising a micromesh screen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/255,578 US20100096569A1 (en) 2008-10-21 2008-10-21 Ultraviolet-transmitting microwave reflector comprising a micromesh screen
US12/255,578 2008-10-21

Publications (2)

Publication Number Publication Date
WO2010048227A2 WO2010048227A2 (en) 2010-04-29
WO2010048227A3 true WO2010048227A3 (en) 2010-07-15

Family

ID=42107915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061380 WO2010048227A2 (en) 2008-10-21 2009-10-20 Ultraviolet-transmitting microwave reflector comprising a micromesh screen

Country Status (6)

Country Link
US (1) US20100096569A1 (en)
JP (1) JP2012506639A (en)
KR (1) KR20110084261A (en)
CN (1) CN102197466A (en)
TW (1) TW201113950A (en)
WO (1) WO2010048227A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4215107B2 (en) * 2007-02-02 2009-01-28 セイコーエプソン株式会社 Light source device, projector
US8101931B2 (en) 2010-04-05 2012-01-24 Miltec Corporation RF screen assembly for microwave powered UV lamps
CN102315720B (en) * 2010-06-30 2014-06-25 清华大学 Swing reflection device for millimeter wave inspection equipment
JP5921542B2 (en) * 2010-07-12 2016-05-24 ノードソン コーポレーションＮｏｒｄｓｏｎ Ｃｏｒｐｏｒａｔｉｏｎ Ultraviolet light system and method for controlling emitted ultraviolet light
US8309421B2 (en) 2010-11-24 2012-11-13 Applied Materials, Inc. Dual-bulb lamphead control methodology
US9108370B2 (en) * 2011-10-19 2015-08-18 Physical Sciences, Inc. Microgravity fabrication and metalization of large, lightweight polymeric bubbles and films for space system applications
US8916038B2 (en) 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US8936709B2 (en) 2013-03-13 2015-01-20 Gtat Corporation Adaptable free-standing metallic article for semiconductors
US20150292815A1 (en) * 2014-04-10 2015-10-15 Applied Materials, Inc. Susceptor with radiation source compensation
US11380557B2 (en) * 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
KR102000672B1 (en) * 2017-07-28 2019-07-17 주식회사 선익시스템 Method for manufacturing thin film deposition mask and deposition mask manufactured thereby
KR101987172B1 (en) * 2017-07-28 2019-06-10 주식회사 선익시스템 Method for manufacturing thin film deposition mask and deposition mask manufactured thereby
US11375584B2 (en) * 2019-08-20 2022-06-28 Applied Materials, Inc. Methods and apparatus for processing a substrate using microwave energy
US11670491B2 (en) * 2020-07-15 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Radio frequency screen for an ultraviolet lamp system
US20230101358A1 (en) * 2021-09-20 2023-03-30 Sudhish Madapur SWAIN Apparatus and method for purifying water

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006147782A (en) * 2004-11-18 2006-06-08 Toshiba Ceramics Co Ltd Microwave heating ceramic heater for semiconductor substrates
US20070232083A1 (en) * 2006-03-29 2007-10-04 Takaharu Itani Apparatus and method for manufacturing semiconductor devices
US20070252500A1 (en) * 2006-04-27 2007-11-01 Ranish Joseph M Substrate processing chamber with dielectric barrier discharge lamp assembly

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3389951A (en) * 1963-07-01 1968-06-25 Gen Electric Diffuse reflector incorporating wire mesh structure
US3872349A (en) * 1973-03-29 1975-03-18 Fusion Systems Corp Apparatus and method for generating radiation
US4501993A (en) * 1982-10-06 1985-02-26 Fusion Systems Corporation Deep UV lamp bulb
US4673846A (en) * 1984-03-02 1987-06-16 Mitsubishi Denki Kabushiki Kaisha Microwave discharge light source apparatus
JPS61160926A (en) * 1985-01-09 1986-07-21 Toshiba Corp Photo-excited thin film former
JPS63149484A (en) * 1986-12-11 1988-06-22 Jeco Co Ltd Flow passage changeover valve
US4794503A (en) * 1987-09-23 1988-12-27 Fusion Systems Corporation Lamp having improved image resolution
US4835932A (en) * 1988-05-13 1989-06-06 Trw Inc. D-section structural tubes
US5032689A (en) * 1989-08-15 1991-07-16 Halligan Brian S EMI/RFI shielding vent and method of use
US5039918A (en) * 1990-04-06 1991-08-13 New Japan Radio Co., Ltd. Electrodeless microwave-generated radiation apparatus
US5467220A (en) * 1994-02-18 1995-11-14 Applied Materials, Inc. Method and apparatus for improving semiconductor wafer surface temperature uniformity
US5841233A (en) * 1996-01-26 1998-11-24 Fusion Lighting, Inc. Method and apparatus for mounting a dichroic mirror in a microwave powered lamp assembly using deformable tabs
WO1998056213A1 (en) * 1997-06-04 1998-12-10 Fusion Lighting, Inc. Method and apparatus for improved electrodeless lamp screen
JPH11121974A (en) * 1997-10-16 1999-04-30 Dainippon Printing Co Ltd Electromagnetic wave shielding plate and mesh pattern plate for manufacturing the same
US6098637A (en) * 1998-03-03 2000-08-08 Applied Materials, Inc. In situ cleaning of the surface inside a vacuum processing chamber
US6187133B1 (en) * 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
US6635583B2 (en) * 1998-10-01 2003-10-21 Applied Materials, Inc. Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
ATE556726T1 (en) * 1999-07-29 2012-05-15 Sev Trent Water Purification Inc UV LIGHT SOURCE
US6555835B1 (en) * 1999-08-09 2003-04-29 Samco International, Inc. Ultraviolet-ozone oxidation system and method
US7265062B2 (en) * 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US6559460B1 (en) * 2000-10-31 2003-05-06 Nordson Corporation Ultraviolet lamp system and methods
US7922923B2 (en) * 2001-02-01 2011-04-12 Creatv Microtech, Inc. Anti-scatter grid and collimator designs, and their motion, fabrication and assembly
US6436194B1 (en) * 2001-02-16 2002-08-20 Applied Materials, Inc. Method and a system for sealing an epitaxial silicon layer on a substrate
JP4799748B2 (en) * 2001-03-28 2011-10-26 忠弘 大見 Microwave plasma process apparatus, plasma ignition method, plasma formation method, and plasma process method
US20030020027A1 (en) * 2001-07-25 2003-01-30 Nordson Corporation Apparatus for infrared reduction in ultraviolet radiation generators
GB0120993D0 (en) * 2001-08-30 2001-10-24 Quay Technologies Pulsed UV light source
US6753129B2 (en) * 2001-12-07 2004-06-22 Applied Materials Inc. Method and apparatus for modification of chemically amplified photoresist by electron beam exposure
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
ITTO20020215A1 (en) * 2002-03-12 2003-09-12 Tetra Laval Holdings E Finance DEVICE FOR THE TREATMENT OF A PACKAGING MATERIAL USING A UV RADIATION.
US20040026255A1 (en) * 2002-08-06 2004-02-12 Applied Materials, Inc Insoluble anode loop in copper electrodeposition cell for interconnect formation
US6928839B2 (en) * 2002-08-15 2005-08-16 Ceramoptec Industries, Inc. Method for production of silica optical fiber preforms
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7153615B2 (en) * 2003-08-20 2006-12-26 Intel Corporation Extreme ultraviolet pellicle using a thin film and supportive mesh
JP4386413B2 (en) * 2003-08-25 2009-12-16 株式会社エンプラス Manufacturing method of wire grid polarizer
US6841790B1 (en) * 2003-10-07 2005-01-11 Miltec Corporation Snap-in radio frequency screen for ultraviolet lamp system
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US7709814B2 (en) * 2004-06-18 2010-05-04 Axcelis Technologies, Inc. Apparatus and process for treating dielectric materials
US7077547B2 (en) * 2004-07-29 2006-07-18 Nordson Corporation Shuttered lamp assembly and method of cooling the lamp assembly
US20060105106A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Tensile and compressive stressed materials for semiconductors
US7777198B2 (en) * 2005-05-09 2010-08-17 Applied Materials, Inc. Apparatus and method for exposing a substrate to a rotating irradiance pattern of UV radiation
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) * 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
KR101233059B1 (en) * 2005-06-22 2013-02-13 액셀리스 테크놀로지스, 인크. Apparatus and process for treating dielectric materials
US20070116934A1 (en) * 2005-11-22 2007-05-24 Miller Scott M Antireflective surfaces, methods of manufacture thereof and articles comprising the same
SG136078A1 (en) * 2006-03-17 2007-10-29 Applied Materials Inc Uv cure system
US7692171B2 (en) * 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US7566891B2 (en) * 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
US20070286956A1 (en) * 2006-04-07 2007-12-13 Applied Materials, Inc. Cluster tool for epitaxial film formation
US7547633B2 (en) * 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US20070256635A1 (en) * 2006-05-02 2007-11-08 Applied Materials, Inc. A Delaware Corporation UV activation of NH3 for III-N deposition
US8003156B2 (en) * 2006-05-04 2011-08-23 Advanced Cardiovascular Systems, Inc. Rotatable support elements for stents
US20090095221A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20090095222A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US7977659B2 (en) * 2008-05-01 2011-07-12 Fusion Uv Systems, Inc. Radio frequency screen assembly for microwave cavities

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006147782A (en) * 2004-11-18 2006-06-08 Toshiba Ceramics Co Ltd Microwave heating ceramic heater for semiconductor substrates
US20070232083A1 (en) * 2006-03-29 2007-10-04 Takaharu Itani Apparatus and method for manufacturing semiconductor devices
US20070252500A1 (en) * 2006-04-27 2007-11-01 Ranish Joseph M Substrate processing chamber with dielectric barrier discharge lamp assembly

Also Published As

Publication number Publication date
JP2012506639A (en) 2012-03-15
TW201113950A (en) 2011-04-16
CN102197466A (en) 2011-09-21
WO2010048227A2 (en) 2010-04-29
US20100096569A1 (en) 2010-04-22
KR20110084261A (en) 2011-07-21

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