WO2010053804A3 - Endpoint control of multiple-wafer chemical mechanical polishing - Google Patents

Endpoint control of multiple-wafer chemical mechanical polishing Download PDF

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Publication number
WO2010053804A3
WO2010053804A3 PCT/US2009/062433 US2009062433W WO2010053804A3 WO 2010053804 A3 WO2010053804 A3 WO 2010053804A3 US 2009062433 W US2009062433 W US 2009062433W WO 2010053804 A3 WO2010053804 A3 WO 2010053804A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
substrate
substrates
mechanical polishing
chemical mechanical
Prior art date
Application number
PCT/US2009/062433
Other languages
French (fr)
Other versions
WO2010053804A2 (en
Inventor
Jimin Zhang
Thomas H. Osterheld
Ingemar Carlsson
Boguslaw A. Swedek
Stephen Jew
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/267,434 external-priority patent/US8295967B2/en
Priority claimed from US12/267,473 external-priority patent/US20100120331A1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011534728A priority Critical patent/JP2012508452A/en
Publication of WO2010053804A2 publication Critical patent/WO2010053804A2/en
Publication of WO2010053804A3 publication Critical patent/WO2010053804A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation

Abstract

A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
PCT/US2009/062433 2008-11-07 2009-10-28 Endpoint control of multiple-wafer chemical mechanical polishing WO2010053804A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011534728A JP2012508452A (en) 2008-11-07 2009-10-28 End point control for chemical mechanical polishing of multiple wafers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/267,434 US8295967B2 (en) 2008-11-07 2008-11-07 Endpoint control of multiple-wafer chemical mechanical polishing
US12/267,473 US20100120331A1 (en) 2008-11-07 2008-11-07 Endpoint control of multiple-wafer chemical mechanical polishing
US12/267,473 2008-11-07
US12/267,434 2008-11-07

Publications (2)

Publication Number Publication Date
WO2010053804A2 WO2010053804A2 (en) 2010-05-14
WO2010053804A3 true WO2010053804A3 (en) 2010-07-22

Family

ID=42153492

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/062433 WO2010053804A2 (en) 2008-11-07 2009-10-28 Endpoint control of multiple-wafer chemical mechanical polishing

Country Status (4)

Country Link
JP (1) JP2012508452A (en)
KR (1) KR20110093866A (en)
TW (1) TW201027611A (en)
WO (1) WO2010053804A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9168630B2 (en) * 2012-04-23 2015-10-27 Applied Materials, Inc. User-input functions for data sequences in polishing endpoint detection
CN103624673B (en) * 2012-08-21 2016-04-20 中芯国际集成电路制造(上海)有限公司 The method of chemical mechanical polishing apparatus and chemico-mechanical polishing
US9636797B2 (en) * 2014-02-12 2017-05-02 Applied Materials, Inc. Adjusting eddy current measurements
KR102131090B1 (en) * 2014-04-22 2020-07-07 가부시키가이샤 에바라 세이사꾸쇼 Polishing method and polishing apparatus
KR102276869B1 (en) * 2016-06-30 2021-07-14 어플라이드 머티어리얼스, 인코포레이티드 Chemical Mechanical Polishing Automated Recipe Creation
KR101968157B1 (en) * 2018-01-18 2019-08-13 팸텍주식회사 Polishing apparatus and sample processing apparatus
JP7386125B2 (en) * 2019-06-11 2023-11-24 株式会社荏原製作所 Polishing method and polishing device
KR102157729B1 (en) 2020-01-09 2020-09-18 엑스티알 테크놀로지스 인코포레이티드 Lcd glass lapping apparatus
CN114290156B (en) * 2021-11-30 2023-05-09 浙江晶盛机电股份有限公司 Thickness measuring method, thickness measuring system and thickness measuring device in silicon wafer polishing process

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020025764A1 (en) * 1997-11-21 2002-02-28 Seiji Katsuoka Polishing apparatus
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20060043071A1 (en) * 2004-09-02 2006-03-02 Liang-Lun Lee System and method for process control using in-situ thickness measurement
US20080051009A1 (en) * 2002-09-16 2008-02-28 Yan Wang Endpoint for electroprocessing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11285968A (en) * 1998-04-01 1999-10-19 Nikon Corp Polishing device and method
JP2002359217A (en) * 2001-05-31 2002-12-13 Omron Corp Method and device for detecting polishing end point

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020025764A1 (en) * 1997-11-21 2002-02-28 Seiji Katsuoka Polishing apparatus
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20080051009A1 (en) * 2002-09-16 2008-02-28 Yan Wang Endpoint for electroprocessing
US20060043071A1 (en) * 2004-09-02 2006-03-02 Liang-Lun Lee System and method for process control using in-situ thickness measurement

Also Published As

Publication number Publication date
JP2012508452A (en) 2012-04-05
KR20110093866A (en) 2011-08-18
TW201027611A (en) 2010-07-16
WO2010053804A2 (en) 2010-05-14

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